arXiv subjects
Publications and source records attributed to N. M. R. Peres.
We present an exact algebraic solution of a single graphene plane in transverse electric and perpendicular magnetic fields. The method presented gives both the eigen-values and the eigen-functions of the graphene plane. It is shown that the eigen-states of the problem can be casted in terms of coherent states, which appears in a natural way from the formalism.
We report the existence of zero energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wavefunctions of these peculiar surface states. It is shown that zero energy edge states in bilayer graphene can be divided into two families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene; (ii) states with finite amplitude over the two layers, with an enhanced penetration into the bulk. The bulk and surface (edge) electronic structure of bilayer graphene nanoribbons is also studied, both in the absence and in the presence of a bias voltage between planes.
We present exact analytical and numerical results for the electronic spectra and the Friedel oscillations around a substitutional impurity atom in a graphene lattice. A chemical dopant in graphene introduces changes in the on-site potential as well as in the hopping amplitude. We employ a T-matrix formalism and find that disorder in the hopping introduces additional interference terms around the impurity that can be understood in terms of bound, semi-bound, and unbound processes for the Dirac electrons. These interference effects can be detected by scanning tunneling microscopy.
Electronic properties of bilayer and multilayer graphene have generally been interpreted in terms of AB or Bernal stacking. However, it is known that many types of stacking defects can occur in natural and synthetic graphite; rotation of the top layer is often seen in scanning tunneling microscopy (STM) studies of graphite. In this paper we consider a graphene bilayer with a relative small angle rotation between the layers and calculate the electronic structure near zero energy in a continuum approximation. Contrary to what happens in a AB stacked bilayer and in accord with observations in epitaxial graphene we find: (a) the low energy dispersion is linear, as in a single layer, but the Fermi velocity can be significantly smaller than the single layer value; (b) an external electric field, perpendicular to the layers, does not open an electronic gap
We study the effect of electron-electron interactions in the electronic properties of a biased graphene bilayer. This system is a semiconductor with conduction and valence bands characterized by an unusual ``mexican-hat'' dispersion. We focus on the metallic regime where the chemical potential lies in the ``mexican-hat'' in the conduction band, leading to a topologically non-trivial Fermi surface in the shape of a ring. We show that due to the unusual topology of the Fermi surface electron-electron interactions are greatly enhanced. We discuss the possibility of an instability towards a ferromagnetic phase due to this enhancement. We compute the electronic polarization function in the random phase approximation and show that, while at low energies the system behaves as a Fermi liquid (albeit with peculiar Friedel oscillations), at high frequencies it shows a highly anomalous response when compare to ordinary metals.
We study the effects of long and short-range electron-electron interactions in a graphene bilayer. Using a variational wavefunction technique we show that in the presence of long-range Coulomb interactions the clean bilayer is always unstable to electron and hole pocket formation with a finite ferromagnetic polarization. Furthermore, we argue that short-range electron-electron interactions lead to a staggered orientation of the ordered ferromagnetic moment in each layer (that is, c-axis antiferromagnetism). We also comment on the effects of doping and trigonal distortions of the electronic bands.
We study the integer and fractional quantum Hall effect on a honeycomb lattice at half-filling (graphene) in the presence of disorder and electron-electron interactions. We show that the interactions between the delocalized chiral edge states (generated by the magnetic field) and Anderson-localized surface states (created by the presence of zig-zag edges) lead to edge reconstruction. As a consequence, the point contact tunneling on a graphene edge has a non-universal tunneling exponent, and the Hall conductivity is not perfectly quantized in units of $e^2/h$. We argue that the magneto-transport properties of graphene depend strongly on the strength of electron-electron interactions, the amount of disorder, and the details of the edges.
Using a generalized Landauer approach we study the non-linear transport in mesoscopic graphene with zig-zag and armchair edges. We find that for clean systems, the low-bias low-temperature conductance, G, of an armchair edge system in quantized as G/t=4 n e^2/h, whereas for a zig-zag edge the quantization changes to G/t t=4(n+1/2)e^2/h, where t is the transmission probability and n is an integer. We also study the effects of a non-zero bias, temperature, and magnetic field on the conductance. The magnetic field dependence of the quantization plateaus in these systems is somewhat different from the one found in the two-dimensional electron gas due to a different Landau level quantization.
We analyze, within a minimal model that allows analytical calculations, the electronic structure and Landau levels of graphene multi-layers with different stacking orders. We find, among other results, that electrostatic effects can induce a strongly divergent density of states in bi- and tri-layers, reminiscent of one-dimensional systems. The density of states at the surface of semi-infinite stacks, on the other hand, may vanish at low energies, or show a band of surface states, depending on the stacking order.
We study the effects of disorder in the electronic properties of graphene multilayers, with special focus on the bilayer and the infinite stack. At low energies and long wavelengths, the electronic self-energies and density of states exhibit behavior with divergences near half-filling. As a consequence, the spectral functions and conductivities do not follow Landau's Fermi liquid theory. In particular, we show that the quasiparticle decay rate has a minimum as a function of energy, there is a universal minimum value for the in-plane conductivity of order e^2/h per plane and, unexpectedly, the c-axis conductivity is enhanced by disorder at low doping, leading to an enormous conductivity anisotropy at low temperatures.
We study the problem of Dirac fermion confinement in graphene in the presence of a perpendicular magnetic field B. We show, analytically and numerically, that confinement leads to anomalies in the electronic spectrum and to a magnetic field dependent crossover from \sqrt{B}, characteristic of Dirac-Landau level behavior, to linear in B behavior, characteristic of confinement. This crossover occurs when the radius of the Landau level becomes of the order of the width of the system. As a result, we show that the Shubnikov-de Haas oscillations also change as a function of field, and lead to a singular Landau plot. We show that our theory is in excellent agreement with the experimental data.
We consider the electronic structure near vacancies in the half-filled honeycomb lattice. It is shown that vacancies induce the formation of localized states. When particle-hole symmetry is broken, localized states become resonances close to the Fermi level. We also study the problem of a finite density of vacancies, obtaining the electronic density of states, and discussing the issue of electronic localization in these systems. Our results also have relevance for the problem of disorder in d-wave superconductors.
We study the presence of ferromagnetism in the phase diagram of the two-dimensional honeycomb lattice close to half-filling (graphene) as a function of the strength of the Coulomb interaction and doping. We show that exchange interactions between Dirac fermions can stabilize a ferromagnetic phase at low doping when the coupling is sufficiently large. In clean systems, the zero temperature phase diagram shows both first order and second order transition lines and two distinct ferromagnetic phases: one phase with only one type of carriers (either electrons or holes) and another with two types of carriers (electrons and holes). Using the coherent phase approximation (CPA) we argue that disorder further stabilizes the ferromagnetic phase.
Two-dimensional carbon, or graphene, is a semi-metal that presents unusual low-energy electronic excitations described in terms of Dirac fermions. We analyze in a self-consistent way the effects of localized (impurities or vacancies) and extended (edges or grain boundaries) defects on the electronic and transport properties of graphene. On the one hand, point defects induce a finite elastic lifetime at low energies with the enhancement of the electronic density of states close to the Fermi level. Localized disorder leads to a universal, disorder independent, electrical conductivity at low temperatures, of the order of the quantum of conductance. The static conductivity increases with temperature and shows oscillations in the presence of a magnetic field. The graphene magnetic susceptibility is temperature dependent (unlike an ordinary metal) and also increases with the amount of defects. Optical transport properties are also calculated in detail. On the other hand, extended defects induce localized states near the Fermi level. In the absence of electron-hole symmetry, these states lead to a transfer of charge between the defects and the bulk, the phenomenon we call self-doping. The role of electron-electron interactions in controlling self-doping is also analyzed. We also discuss the integer and fractional quantum Hall effect in graphene, the role played by the edge states induced by a magnetic field, and their relation to the almost field independent surface states induced at boundaries. The possibility of magnetism in graphene, in the presence of short-range electron-electron interactions and disorder is also analyzed.
We discuss the effect of site dilution on both the magnetization and the density of states of quantum spins in the honeycomb lattice, described by the antiferromagnetic Heisenberg spin-S model. For this purpose a real-space Bogoliubov-Valatin transformation is used. In this work we show that for the S>1/2 the system can be analyzed in terms of linear spin wave theory. For spin S=1/2, however, the linear spin wave approximation breaks down. In this case, we have studied the effect of dilution on the staggered magnetization using the Stochastic Series Expansion Monte Carlo method. Two main results are to be stressed from the Monte Carlo method: (i) a better value for the staggered magnetization of the undiluted system, m=0.2677(6); (ii) a finite value of the staggered magnetization of the percolating cluster at the classical percolation threshold, showing that there is no quantum critical transition driven by dilution in the Heisenberg model. In the solution of the problem using linear the spin wave method we pay special attention to the presence of zero energy modes. Using a combination of linear spin wave analysis and the recursion method we were able to obtain the thermodynamic limit behavior of the density of states for both the square and the honeycomb lattices. We have used both the staggered magnetization and the density of states to analyze neutron scattering experiments and Neel temperature measurements on quasi-two- -dimensional honeycomb systems. Our results are in quantitative agreement with experimental results on Mn_pZn_{1-p}PS_3 and on the Ba(Ni_pMg_{1-p})_2V_2O_8.
We present a theoretical description of the electronic properties of graphene in the presence of disorder, electron-electron interactions, and particle-hole symmetry breaking. We show that while particle-hole asymmetry, long-range Coulomb interactions, and extended defects lead to the phenomenon of self-doping, local defects determine the transport and spectroscopic properties. Our results explain recent experiments in graphitic devices and predict new electronic behavior.
We discuss the magnetic phases of the Hubbard model for the honeycomb lattice both in two and three spatial dimensions. A ground state phase diagram is obtained depending on the interaction strength U and electronic density n. We find a first order phase transition between ferromagnetic regions where the spin is maximally polarized (Nagaoka ferromagnetism) and regions with smaller magnetization (weak ferromagnetism). When taking into account the possibility of spiral states, we find that the lowest critical U is obtained for an ordering momentum different from zero. The evolution of the ordering momentum with doping is discussed. The magnetic excitations (spin waves) in the antiferromagnetic insulating phase are calculated from the random-phase-approximation for the spin susceptibility. We also compute the spin fluctuation correction to the mean field magnetization by virtual emission/absorpion of spin waves. In the large $U$ limit, the renormalized magnetization agrees qualitatively with the Holstein-Primakoff theory of the Heisenberg antiferromagnet, although the latter approach produces a larger renormalization.
Comment on "Gapless Spin-1 Neutral Collective Mode Branch for Graphite" by G. Baskaran and S.A. Jafari [cond-mat/0110022; Physical Review Letters, 89, 016402 (2002)].