arXiv subjects

N. M. R. Peres

Publications and source records attributed to N. M. R. Peres.

At least 145 records · Page 8Linked to original sources

arXiv2008

The optical conductivity of graphene in the visible region of the spectrum

We compute the optical conductivity of graphene beyond the usual Dirac cone approximation, giving results that are valid in the visible region of the conductivity spectrum. The effect of next nearest neighbor hoping is also discussed. Using the full expression for the optical conductivity, the transmission and reflection coefficients are given. We find that even in the optical regime the corrections to the Dirac cone approximation are surprisingly small (a few percent). Our results help in the interpretation of the experimental results reported by Nair {\it et al.} [Science {\bf 320}, 1308 (2008)].

cond-mat.mes-hall↗

arXiv2008

First order ferromagnetic phase transition in the low electronic density regime of a biased graphene bilayer

The phase diagram of a biased graphene bilayer is computed and the existence of a ferromagnetic phase is discussed both in the critical on-site interaction $U_{c}$ versus doping density and versus temperature. We show that in the ferromagnetic phase the two planes have unequal magnetization and that the electronic density is hole like in one plane and electron like in the other. We give evidence for a \emph{first-order} phase transition between paramagnetic and ferromagnetic phases induced by doping at zero temperature.

cond-mat.str-el↗

arXiv2008

Localized Magnetic States in Graphene

We examine the conditions necessary for the presence of localized magnetic moments on adatoms with inner shell electrons in graphene. We show that the low density of states at the Dirac point, and the anomalous broadening of the adatom electronic level,lead to the formation of magnetic moments for arbitrarily small local charging energy. As a result, we obtain an anomalous scaling of the boundary separating magnetic and non-magnetic states. We show that, unlike any other material, the formation of magnetic moments can be controlled by an electric field effect.

cond-mat.str-el↗

arXiv2008

Transport in a Clean Graphene Sheet at Finite Temperature and Frequency

We calculate the conductivity of a clean graphene sheet at finite temperatures starting from the tight-binding model. We obtain a finite value for the dc-conductivity at zero temperature. For finite temperature, the spontaneous electron-hole creation, responsible for the finite conductivity at zero temperature, is washed out and the dc-conductivity yields zero. Our results are in agreement with calculations based on the field-theoretical model for graphene.

cond-mat.mes-hall↗

arXiv2008

Transmission through a defect in polyacene: the extreme limit of ultra narrow graphene

We compute the transmission of an electron through an impurity in polyacene. An analytical expression for the transmission coefficient is found. For simplicity the disorder is confined to a single unit cell, but the generalization to several unit cells is straightforward. Both on-site and off-diagonal defects are considered. When the impurity preserves the inversion symmetry around the central axis, the scattering problem can be reduced to that of two independent chains with an alternating sequence of two types of atoms.

cond-mat.mes-hall↗

arXiv2008

Tunneling of Dirac electrons through spatial regions of finite mass

We study the tunneling of chiral electrons in graphene through a region where the electronic spectrum changes from the usual linear dispersion to a hyperbolic dispersion, due to the presence of a gap. It is shown that contrary to the tunneling through a potential barrier, the transmission of electrons is, in this case, smaller than one for normal incidence. This mechanism may be useful for designing electronic devices made of graphene.

cond-mat.mes-hall↗

arXiv2008

Low density ferromagnetism in biased bilayer graphene

We compute the phase diagram of a biased graphene bilayer. The existence of a ferromagnetic phase is discussed with respect both to carrier density and temperature. We find that the ferromagnetic transition is first order, lowering the value of $U$ relatively to the usual Stoner criterion. We show that in the ferromagnetic phase the two planes have unequal magnetization and that the electronic density is hole like in one plane and electron like in the other.

cond-mat.mes-hall↗

arXiv2008

Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene

We show that the optical transparency of suspended graphene is defined by the fine structure constant, alpha, the parameter that describes coupling between light and relativistic electrons and is traditionally associated with quantum electrodynamics rather than condensed matter physics. Despite being only one atom thick, graphene is found to absorb a significant (pi times alpha=2.3%) fraction of incident white light, which is a consequence of graphene's unique electronic structure. This value translates into universal dynamic conductivity G =e^2/4h_bar within a few percent accuracy.

cond-mat.mes-hall↗

arXiv2008

The infrared conductivity of graphene

We study the infrared conductivity of graphene at finite chemical potential and temperature taking into account the effect of phonons and disorder due to charged impurities and unitary scatterers. The screening of the long-range Coulomb potential is treated using the random phase approximation coupled to the coherent potential approximation. The effect of the electron-phonon coupling is studied in second-order perturbation theory. The theory has essentially one free parameter, namely, the number of charge impurities per carbon, n^{\rm C}_i. We find an anomalous enhancement of the conductivity in a frequency region that is blocked by Pauli exclusion and an impurity broadening of the conductivity threshold. We also find that phonons induce Stokes and anti-Stokes lines that produce an excess conductivity, when compared to the far infrared value of σ_0 = (π/2) e^2/h.

cond-mat.mes-hall↗

arXiv2008

The electronic properties of graphene

This article reviews the basic theoretical aspects of graphene, a one atom thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. We show that the Dirac electrons behave in unusual ways in tunneling, confinement, and integer quantum Hall effect. We discuss the electronic properties of graphene stacks and show that they vary with stacking order and number of layers. Edge (surface) states in graphene are strongly dependent on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. We also discuss how different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

cond-mat.other↗

arXiv2008

Effect of Holstein phonons on the electronic properties of graphene

We obtain the self-energy of the electronic propagator due to the presence of Holstein polarons within the first Born approximation. This leads to a renormalization of the Fermi velocity of one percent. We further compute the optical conductivity of the system at the Dirac point and at finite doping within the Kubo-formula. We argue that the effects due to Holstein phonons are negligible and that the Boltzmann approach which does not include inter-band transition and can thus not treat optical phonons due to their high energy of $\hbarω_0\sim0.1-0.2$eV, remains valid.

cond-mat.mes-hall↗

arXiv2008

Electronic properties of bilayer and multilayer graphene

We study the effects of site dilution disorder on the electronic properties in graphene multilayers, in particular the bilayer and the infinite stack. The simplicity of the model allows for an easy implementation of the coherent potential approximation and some analytical results. Within the model we compute the self-energies, the density of states and the spectral functions. Moreover, we obtain the frequency and temperature dependence of the conductivity as well as the DC conductivity. The c-axis response is unconventional in the sense that impurities increase the response for low enough doping. We also study the problem of impurities in the biased graphene bilayer.

cond-mat.mes-hall↗

arXiv2008

Magnetic structure at zigzag edges of graphene bilayer ribbons

We study the edge magnetization of bilayer graphene ribbons with zigzag edges. The presence of flat edge-state bands at the Fermi energy of undoped bilayer, which gives rise to a strong peak in the density of states, makes bilayer ribbons magnetic at the edges even for very small on-site electronic repulsion. Working with the Hubbard model in the Hartree Fock approximation we show that the magnetic structure in bilayer ribbons with zigzag edges is ferromagnetic along the edge, involving sites of the two layers, and antiferromagnetic between opposite edges. It is also shown that this magnetic structure is a consequence of the nature of the edge states present in bilayer ribbons with zigzag edges. Analogously to the monolayer case, edge site magnetization as large as $m \approx0.2 μ_{B}$ (per lattice site) even at small on-site Hubbard repulsion $U \approx 0.3 {eV}$ is realized in nanometer wide bilayer ribbons.

cond-mat.mes-hall↗

arXiv2007

Transmission through a biased graphene bilayer barrier

We study the electronic transmission through a graphene bilayer in the presence of an applied bias between layers. We consider different geometries involving interfaces between both a monolayer and a bilayer and between two bilayers. The applied bias opens a sizable gap in the spectrum inside the bilayer barrier region, thus leading to large changes in the transmission probability and electronic conductance that are controlled by the applied bias.

cond-mat.mes-hall↗

arXiv2007

Gaped graphene bilayer: disorder and magnetic field effects

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder, perpendicular magnetic field, and transverse electric field. We show that the gap is rather stable in the presence of diagonal disorder. We compute the cyclotron effective mass in the semi-classical approximation, valid at low magnetic fields. Landau level formation is clearly seen in zigzag and armchair ribbons of the gaped bilayer at intermediate magnetic fields.

cond-mat.mes-hall↗

arXiv2007

Electronic transport in graphene: A semi-classical approach including midgap states

Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order to explain the experimentally observed mobilities. We thus propose an additional scattering mechanism involving midgap states which leads to a similar k-dependence of the relaxation time as charged impurities. The new scattering mechanism can account for the experimental findings such as the sublinear behavior of the conductivity versus gate voltage and the increase of the minimal conductivity for clean samples. We also discuss temperature dependent scattering due to acoustic phonons.

cond-mat.mes-hall↗

arXiv2007

Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to mid-infrared energies to a value as large as 0.3 eV by using fields of < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

cond-mat.mtrl-sci↗

arXiv2007

Phenomenological study of the electronic transport coefficients of graphene

Using a semi-classical approach and input from experiments on the conductivity of graphene, we determine the electronic density dependence of the electronic transport coefficients -- conductivity, thermal conductivity and thermopower -- of doped graphene. Also the electronic density dependence of the optical conductivity is obtained. Finally we show that the classical Hall effect (low field) in graphene has the same form as for the independent electron case, characterized by a parabolic dispersion, as long as the relaxation time is proportional to the momentum.

cond-mat.mes-hall↗