arXiv subjects

N. Samkharadze

Publications and source records attributed to N. Samkharadze.

16 recordsLinked to original sources

arXiv2024

Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process

Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDX(TM) industrial process. We demonstrate here that quantum dots are formed in the device channel by applying a combination of a back- and gate voltages. We report our results on an effective detuning of the energy levels in the quantum dots by varying the barrier gate voltages in combination with the back-gate voltage. Given the need and importance of scaling to larger numbers of qubits, we demonstrate here the feasibility of single-electron box sensors at the edge of the quantum dot array for effective charge sensing in different operation modes -- sensing charge transitions in a single- and double quantum dots forming the quantum dot array. We also report measurement results demonstrating bias triangle pair formation and precise control over coupled quantum dots with variations in the inter-dot barrier. The reported measurement results demonstrate the ability to control the formation and coupling of multiple quantum dots in a quantum dot array and to sense their charge state via a Single Electron Box sensor in a commercial process for the first time.

cond-mat.mes-hall↗

arXiv2024

Persistence of Entangled States and High Fidelity Quantum Gate Operations in Si/SiGe Spin Qubits at High Temperature

We characterize single- and two-qubit operations in a SiGe quantum dot array, from the perspective of its quantum information processing capabilities. The analysis includes rigorous randomized benchmarking of single- and two-qubit gates, SPAM characterization, and Bell's state tomography, which are all basic functionality required for universal quantum computation. To assess compatibility with integrated cryogenic electronics, we evaluate qubit performance at 350 mK, 500 mK, and 750 mK, with high fidelity single and two qubit operations. The highest temperature, 750 mK, falls within the realistic thermal budget for practical integrated cryogenic electronics and represents the highest operating temperature reported for this qubit platform.

quant-ph↗

arXiv2021

Qubits made by advanced semiconductor manufacturing

Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer

cond-mat.mes-hall↗

arXiv2021

Radio frequency reflectometry in silicon-based quantum dots

RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $μ$s.

cond-mat.mes-hall↗

arXiv2020

On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits

Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an effective strategy to overcome this bottleneck. In the case of gate-defined quantum dot arrays, specific static voltages need to be applied to many gates simultaneously to realize electron confinement. When a charge-locking structure is placed between the quantum device and the demultiplexer, the voltage can be maintained locally. In this study, we implement a switched-capacitor circuit for charge-locking and use it to float the plunger gate of a single quantum dot. Parallel plate capacitors, transistors and quantum dot devices are monolithically fabricated on a Si/SiGe-based substrate to avoid complex off-chip routing. We experimentally study the effects of the capacitor and transistor size on the voltage accuracy of the floating node. Furthermore, we demonstrate that the electrochemical potential of the quantum dot can follow a 100 Hz pulse signal while the dot is partially floating, which is essential for applying this strategy in qubit experiments.

cond-mat.mes-hall↗

arXiv2019

Rapid high-fidelity gate-based spin read-out in silicon

Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. As the signal from a single electron spin is minute, different spin states are converted to different charge states. Charge detection so far mostly relied on external electrometers, which hinders scaling to two-dimensional spin qubit arrays. As an alternative, gate-based dispersive read-out based on off-chip lumped element resonators were introduced, but here integration times of 0.2 to 2 ms were required to achieve single-shot read-out. Here we connect an on-chip superconducting resonant circuit to two of the gates that confine electrons in a double quantum dot. Measurement of the power transmitted through a feedline coupled to the resonator probes the charge susceptibility, distinguishing whether or not an electron can oscillate between the dots in response to the probe power. With this approach, we achieve a signal-to-noise ratio (SNR) of about six within an integration time of only 1 $μ$s. Using Pauli's exclusion principle for spin-to-charge conversion, we demonstrate single-shot read-out of a two-electron spin state with an average fidelity of $>$98% in 6 $μ$s. This result may form the basis of frequency multiplexed read-out in dense spin qubit systems without external electrometers, therefore simplifying the system architecture.

cond-mat.mes-hall↗

arXiv2018

Electron-Electron Interactions and the Paired-to-Nematic Quantum Phase Transition in the Second Landau Level

In spite of its ubiquity in strongly correlated systems, the competition of paired and nematic ground states remains poorly understood. Recently such a competition was reported in the two-dimensional electron gas at filling factor $ν=5/2$. At this filling factor a pressure-induced quantum phase transition was observed from the paired fractional quantum Hall state to the quantum Hall nematic. Here we show that the pressure induced paired-to-nematic transition also develops at $ν=7/2$, demonstrating therefore this transition in both spin branches of the second orbital Landau level. However, we find that pressure is not the only parameter controlling this transition. Indeed, ground states consistent with those observed under pressure also develop in a sample measured at ambient pressure, but in which the electron-electron interaction was tuned close to its value at the quantum critical point. Our experiments suggest that electron-electron interactions play a critical role in driving the paired-to-nematic transition.

cond-mat.str-el↗

arXiv2017

Strong spin-photon coupling in silicon

We report the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, through a strong local magnetic field gradient from a nearby micromagnet. This result opens the way to the realization of large networks of quantum dot based spin qubit registers, removing a major roadblock to scalable quantum computing with spin qubits.

cond-mat.mes-hall↗

arXiv2017

Observation of an anomalous density-dependent energy gap of the $ν=5/2$ fractional quantum Hall state in the low density regime

We have studied the $ν=5/2$ fractional quantum Hall state in a density-tunable sample at extremely low electron densities. For the densities accessed in our experiment, the Landau level mixing parameter $κ$ spans the $2.52<κ<2.82$ range. In the vicinity of $5.8 \times 10^{10}$~cm$^{-2}$ or $κ= 2.6$ an anomalously large change in the density dependence of the energy gap is observed. Possible origins of such an anomaly are discussed, including a topological phase transition in the $ν=5/2$ fractional quantum Hall state.

cond-mat.mes-hall↗

arXiv2017

Onset of Quantum Criticality in the Topological-to-Nematic Transition in a Two-dimensional Electron Gas at Filling Factor $ν=5/2$

Under hydrostatic pressure, the ground state of a two-dimensional electron gas at $ν=5/2$ changes from a fractional quantum Hall state to the stripe phase. By measuring the energy gap of the fractional quantum Hall state and of the onset temperature of the stripe phase we mapped out a phase diagram of these competing phases in the pressure-temperature plane. Our data highlight the dichotomy of two descriptions of the half-filled Landau level near the quantum critical point: one based on electrons and another on composite fermions.

cond-mat.str-el↗

arXiv2015

High Kinetic Inductance Superconducting Nanowire Resonators for Circuit QED in a Magnetic Field

We present superconducting microwave-frequency resonators based on NbTiN nanowires. The small cross section of the nanowires minimizes vortex generation, making the resonators resilient to magnetic fields. Measured intrinsic quality factors exceed $2\times 10^5$ in a $6$ T in-plane magnetic field, and $3\times 10^4$ in a $350$ mT perpendicular magnetic field. Due to their high characteristic impedance, these resonators are expected to develop zero-point voltage fluctuations one order of magnitude larger than in standard coplanar waveguide resonators. These properties make the nanowire resonators well suited for circuit QED experiments needing strong coupling to quantum systems with small electric dipole moments and requiring a magnetic field, such as electrons in single and double quantum dots.

cond-mat.mes-hall↗

arXiv2015

Observation of a transition from a topologically ordered to a spontaneously broken symmetry phase

Until the late 1980s, phases of matter were understood in terms of Landau's symmetry breaking theory. Following the discovery of the quantum Hall effect the introduction of a second class of phases, those with topological order, was necessary. Phase transitions within the first class of phases involve a change in symmetry, whereas those between topological phases require a change in topological order. However, in rare cases transitions may occur between the two classes in which the vanishing of the topological order is accompanied by the emergence of a broken symmetry. Here, we report the existence of such a transition in a two-dimensional electron gas hosted by a GaAs/AlGaAs crystal. When tuned by hydrostatic pressure, the $ν=5/2$ fractional quantum Hall state, believed to be a prototype non-Abelian topological phase, gives way to a quantum Hall nematic phase. Remarkably, this nematic phase develops spontaneously, in the absence of any externally applied symmetry breaking fields.

cond-mat.str-el↗

arXiv2014

Observation of Incompressibility at $ν=4/11$ and $ν=5/13$

The region of filling factors $1/3<ν<2/5$ is predicted to support new types of fractional quantum Hall states with topological order different from that of the Laughlin-Jain or the Moore-Read states. Incompressibility is a necessary condition for the formation of such novel topological states. We find that at 6.9~mK incompressibility develops only at $ν=4/11$ and $5/13$, while the states at $ν=6/17$ and $3/8$ remain compressible. Our observations at $ν=4/11$ and $5/13$ are first steps towards understanding emergent topological order in these fractional quantum Hall states.

cond-mat.str-el↗

arXiv2011

Quantitative Analysis of the Disorder Broadening and the Intrinsic Gap for the $ν=5/2$ Fractional Quantum Hall State

We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the $ν=5/2$ fractional quantum Hall state. Futhermore, we quantify, for the first time, the dependence of the intrinsic gap at $ν=5/2$ on Landau level mixing.

cond-mat.str-el↗

arXiv2011

Particle-hole Asymmetry of Fractional Quantum Hall States in the Second Landau Level of a Two-dimensional Hole System

We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor $ν=8/3$. We identified this state by a quantized Hall resistance and an activated temperature dependence of the longitudinal resistance and found an energy gap of 40 mK. To our surprise the particle-hole conjugate state at filling factor $ν=7/3$ in our sample does not develop down to 6.9 mK. This observation is contrary to that in electron samples in which the 7/3 state is typically more stable than the 8/3 state. We present evidence that the asymmetry between the 7/3 and 8/3 states in our hole sample is due to Landau level mixing.

cond-mat.mes-hall↗

arXiv2011

Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields

We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4mK.

cond-mat.mes-hall↗