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arXiv · 2012.14560

Radio frequency reflectometry in silicon-based quantum dots

Y. -Y. Liu·S. G. J. Philips·L. A. Orona·N. Samkharadze·T. McJunkin·E. R. MacQuarrie·M. A. Eriksson·L. M. K. Vandersypen·A. Yacoby
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Abstract

RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $\mu$s.

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Y. -Y. Liu, S. G. J. Philips, L. A. Orona, N. Samkharadze, T. McJunkin, E. R. MacQuarrie, M. A. Eriksson, L. M. K. Vandersypen, A. Yacoby. 2020-12-29. Radio frequency reflectometry in silicon-based quantum dots. https://doi.org/10.1103/physrevapplied.16.014057

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