arXiv subjects

Naizhou Wang

Publications and source records attributed to Naizhou Wang.

18 recordsLinked to original sources

arXiv2026

Interlayer Charge-density-wave Vector Phase Induced Structural Chirality

Chiral charge density waves (CDWs) have attracted intense interest due to their exotic quantum properties, yet the microscopic origin of structural chirality emerging from correlated charge order remains elusive. Here, we reveal that the interlayer phases of CDW wave vectors, an overlooked degree of freedom, play a crucial role in driving chiral structural displacements in layered CDW materials. By explicitly incorporating the interlayer phases in first-principles calculations, we successfully obtained the chiral structure of the CDW phases of AV$_3$Sb$_5$ (A= K, Rb, and Cs) and 1T-TiSe$_2$. The electronic and optical properties of the predicted chiral structures are consistent with experimental measurements of these materials in their CDW phases. We further predict that 1T-NbSe$_2$ is a promising material candidate for realizing chiral CDW order. Beyond materials prediction, our theory reveals that the chiral CDW can be manipulated by electron filling. Our study opens new avenues for discovering, designing, and engineering chiral CDW materials.

cond-mat.mtrl-sci↗

arXiv2025

Wavefunction-Free Approach for Predicting Nonlinear Responses in Weyl Semimetals

By sidestepping the intractable calculations of many-body wavefunctions, density functional theory (DFT) has revolutionized the prediction of ground states of materials. However, predicting nonlinear responses--critical for next-generation quantum devices--still relies heavily on explicit wavefunctions, limiting computational efficiency. In this letter, using the circular photogalvanic effect (CPGE) in Weyl semimetals as a representative example, we realize a 1000-fold computational speedup by eliminating the explicit dependence on wavefunctions. Our approach leverages the one-to-one correspondence between free parameters of Weyl fermions and the associated responses to obtain precise wavefunction-free formulations. Applying our methodology, we systematically investigated known Weyl semimetals and revealed that Ta$_3$S$_2$ exhibits photocurrents an order of magnitude greater than those observed in TaAs, with potential for an additional order-of-magnitude enhancement under strain. To further demonstrate the generality of our approach, we obtained a wavefunction-free formula for the Berry-curvature dipole in Weyl semimetals. Our work paves the way for substantially more efficient screening and optimization of nonlinear electromagnetic properties in topological quantum materials.

cond-mat.mtrl-sci↗

arXiv2025

Lorentz Skew Scattering Nonreciprocal Magneto-Transport

In materials with broken inversion symmetry, nonreciprocal magneto-transport (NRMT) manifests as a bilinear dependence of charge conductivity on applied electric (E) and magnetic (B) fields. This phenomenon is deeply rooted in symmetry and electronic quantum geometry, holding promise for novel rectification and detector technologies. Existing experimental studies generally attribute NRMT to Zeeman-driven mechanisms and exhibit quadratic scaling with conductivity. Here, we report a previously unknown NRMT microscopic mechanism - Lorentz skew scattering (LSK) - revealed through the discovery of an unprecedented quartic scaling law of NRMT as well as quantitative agreement between theory and experiment in BiTeBr. LSK emerges from the interplay of Lorentz force and skew scattering, bridging classical field effect to quantum scattering effect on the Fermi surface. We demonstrate that the LSK dominates NRMT in BiTeBr, and elucidate that this dominance over other possible contributions stems from high mobility and strong Rashba splitting. The finding of LSK mechanism is of unique importance because it unveils the leading NRMT effect in high-mobility systems and suggests a universal principle towards strong NRMT by enhancing electronic relaxation time in topological materials, rendering a new designing idea for low-dissipation rectifiers and high-performance quantum electronics.

cond-mat.mes-hall↗

arXiv2024

Room-temperature nonlinear transport and microwave rectification in antiferromagnetic MnBi$_2$Te$_4$ films

The discovery of the nonlinear Hall effect provides an avenue for studying the interplay among symmetry, topology, and phase transitions, with potential applications in signal doubling and high-frequency rectification. However, practical applications require devices fabricated on large area thin film as well as room-temperature operation. Here, we demonstrate robust room-temperature nonlinear transverse response and microwave rectification in MnBi$_2$Te$_4$ films grown by molecular beam epitaxy. We observe multiple sign-reversals in the nonlinear response by tuning the chemical potential. Through theoretical analysis, we identify skew scattering and side jump, arising from extrinsic spin-orbit scattering, as the main mechanisms underlying the observed nonlinear signals. Furthermore, we demonstrate radio frequency (RF) rectification in the range of 1-8 gigahertz at 300 K. These findings not only enhance our understanding of the relationship between nonlinear response and magnetism, but also expand the potential applications as energy harvesters and detectors in high-frequency scenarios.

cond-mat.mtrl-sci↗

arXiv2024

Observation of Ferromagnetic Phase in the Second Moiré Band of Twisted MoTe2

Flat bands and electron correlation in moiré lattices give rise to many exotic phases, including Mott insulators, superconductivity, and topological states. Within the first moiré band, integer and fractional quantum anomalous Hall effects have been observed in twisted bilayer MoTe2 (tMoTe2) at one hole doping and fractional doping per moiré unit cell, respectively. When the second moiré band is fully hole doped, quantum spin Hall insulator has also been reported in tMoTe2 at a certain twist angle. Exotic topological states together with ferromagnetic (FM) states in the high moiré band can potentially exist as well. In this study, we report the observation of a FM phase in the second moiré band in tMoTe2. The FM phase can be tuned by both the doping level and displacement field. At filling around 2.58 holes per moiré unit cell, the FM phase reaches a Curie temperature of 3.5 K. A large displacement field can suppress the FM phase, like the FM phase at the filling of -1. Our results demonstrate the realization of time-reversal symmetry-breaking states in the higher moiré bands in tMoTe2.

cond-mat.mes-hall↗

arXiv2024

Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor

Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonreciprocity remains yet to be achieved. Here, we report the observation of field-free electrical switching of nonreciprocal Ising superconductivity in Fe3GeTe2/NbSe2 van der Waals (vdW) heterostructure. By taking advantage of this electrically switchable superconducting nonreciprocity, we demonstrate a proof-of-concept nonreciprocal quantum neuronal transistor, which allows for implementing the XOR logic gate and faithfully emulating biological functionality of a cortical neuron in the brain. Our work provides a promising pathway to realize field-free and electrically switchable nonreciprocity of quantum transport and demonstrate its potential in exploring neuromorphic quantum devices with both functionality and performance beyond the traditional devices.

cond-mat.mes-hall↗

arXiv2024

Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high working temperature and adjustable functionalities holds great potential for advancing the application of 2D materials in magnetic sensing and data storage. Here, we report the observation of highly tunable room-temperature tunneling magnetoresistance through electronic means in a full vdW Fe3GaTe2/WSe2/Fe3GaTe2 MTJ. The spin valve effect of the MTJ can be detected even with the current below 1 nA, both at low and room temperatures, yielding a tunneling magnetoresistance (TMR) of 340% at 2 K and 50% at 300 K, respectively. Importantly, the magnitude and sign of TMR can be modulated by a DC bias current, even at room temperature, a capability that was previously unrealized in full vdW MTJs. This tunable TMR arises from the contribution of energy-dependent localized spin states in the metallic ferromagnet Fe3GaTe2 during tunnel transport when a finite electrical bias is applied. Our work offers a new perspective for designing and exploring room-temperature tunable spintronic devices based on vdW magnet heterostructures.

cond-mat.mes-hall↗

arXiv2024

G-NeRF: Geometry-enhanced Novel View Synthesis from Single-View Images

Novel view synthesis aims to generate new view images of a given view image collection. Recent attempts address this problem relying on 3D geometry priors (e.g., shapes, sizes, and positions) learned from multi-view images. However, such methods encounter the following limitations: 1) they require a set of multi-view images as training data for a specific scene (e.g., face, car or chair), which is often unavailable in many real-world scenarios; 2) they fail to extract the geometry priors from single-view images due to the lack of multi-view supervision. In this paper, we propose a Geometry-enhanced NeRF (G-NeRF), which seeks to enhance the geometry priors by a geometry-guided multi-view synthesis approach, followed by a depth-aware training. In the synthesis process, inspired that existing 3D GAN models can unconditionally synthesize high-fidelity multi-view images, we seek to adopt off-the-shelf 3D GAN models, such as EG3D, as a free source to provide geometry priors through synthesizing multi-view data. Simultaneously, to further improve the geometry quality of the synthetic data, we introduce a truncation method to effectively sample latent codes within 3D GAN models. To tackle the absence of multi-view supervision for single-view images, we design the depth-aware training approach, incorporating a depth-aware discriminator to guide geometry priors through depth maps. Experiments demonstrate the effectiveness of our method in terms of both qualitative and quantitative results.

cs.CV↗

arXiv2024

Giant third-order nonlinear Hall effect in misfit layer compound (SnS)${1.17}$(NbS$_2$)$_3$

Nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability (BCP) tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS)${1.17}$(NbS$_2$)$_3$. While the THE is prohibited in individual NbS$_2$ and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering.

cond-mat.mes-hall↗

arXiv2023

Quantum metric-induced nonlinear transport in a topological antiferromagnet

The Berry curvature and quantum metric are the imaginary part and real part, respectively, of the quantum geometric tensor which characterizes the topology of quantum states. The former is known to generate a zoo of important discoveries such as quantum Hall effect and anomalous Hall effect (AHE), while the consequences of the quantum metric have rarely been probed by transport. In this work, we observed quantum metric induced nonlinear transport, including both nonlinear AHE and diode-like nonreciprocal longitudinal response, in thin films of a topological antiferromagnet, MnBi$_2$Te$_4$. Our observation reveals that the transverse and longitudinal nonlinear conductivities reverse signs when reversing the antiferromagnetic order, diminish above the Néel temperature, and are insensitive to disorder scattering, thus verifying their origin in the band structure topology. They also flip signs between electron and hole-doped regions, in agreement with theoretical calculations. Our work provides a pathway to probe the quantum metric through nonlinear transport and to design magnetic nonlinear devices.

cond-mat.mes-hall↗

arXiv2023

Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer

Localized interlayer excitons (LIXs) in two-dimensional moiré superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree with the experimental photoluminescence spectra of LIX in the moiré MoSe2/WSe2 heterobilayer. In particular, we find that the emission energy-lifetime correlation and the nonmonotonic power dependence of the lifetime agree well with the DAP IX model. Our results provide insight into the physical mechanism of LIX formation in moiré heterostructures and pave new directions for engineering interlayer exciton properties in moiré superlattices.

cond-mat.mes-hall↗

arXiv2022

Non-reciprocal charge transport in an intrinsic magnetic topological insulator MnBi2Te4

Symmetries, quantum geometries and electronic correlations are among the most important ingredients of condensed matters, and lead to nontrivial phenomena in experiments, for example, non-reciprocal charge transport. Here we report the non-reciprocal charge transport in the intrinsic magnetic topological insulator MnBi2Te4. The current direction relevant resistance is observed at chiral edges, which is magnetically switchable, edge position sensitive and septuple layer number controllable. Applying gate voltage can effectively tune the non-reciprocal resistance. The observation and manipulation of non-reciprocal charge transport indicate the fundamental role of chirality in charge transport of MnBi2Te4, and pave ways to develop van der Waals spintronic devices by chirality engineering.

cond-mat.mes-hall↗

arXiv2022

Quantum interference of resonance fluorescence from Germanium-vacancy color centers in diamond

Resonance fluorescence from a quantum emitter is an ideal source to extract indistinguishable photons. By using the cross polarization to suppress the laser scattering, we observed resonance fluorescence from GeV color centers in diamond at cryogenic temperature. The Fourier-transform-limited linewidth emission with $T_2/2T_1\sim0.86$ allows for two-photon interference based on single GeV color center. Under pulsed excitation, the 24 ns separated photons exhibit a Hong-Ou-Mandel visibility of $0.604\pm0.022$, while the continuous-wave excitation leads to a coalescence time window of 1.05 radiative lifetime. Together with single-shot readout of spin states, it paves the way towards building a quantum network with GeV color centers in diamond.

quant-ph↗

arXiv2022

Nonlinear Hall effect with non-centrosymmetric topological phase in ZrTe$_5$

The non-centrosymmetric topological material has attracted intense attention due to its superior characters as compared to the centrosymmetric one. On one side, the topological phase coming from global geometric properties of the quantum wave function remains unchanged, on the other side, abundant exotic phenomena are predicted to be merely emerged in non-centrosymmetric ones, due to the redistribution of local quantum geometry. Whereas, probing the local quantum geometry in non-centrosymmetric topological material remains challenging. Here, we report a non-centrosymmetric topological phase in ZrTe$_5$, probed by the nonlinear Hall (NLH) effect. The angle-resolved and temperature-dependent NLH measurement reveals the inversion and ab-plane mirror symmetries breaking under 30 K, consistent with our theoretical calculation. Our findings identify a new non-centrosymmetric phase of ZrTe$_5$ and provide a platform to probe and control local quantum geometry via crystal symmetries.

cond-mat.mtrl-sci↗

arXiv2021

Layer Hall effect in a 2D topological Axion antiferromagnet

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential.

cond-mat.mtrl-sci↗

arXiv2019

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engineered to avalanche photodetectors (APD) and impact ionization transistors, demonstrating ultra-sensitive mid-IR light detection (4 μm wavelength) and ultra-steep subthreshold swing, respectively. These devices show an extremely low avalanche threshold (<1 volt), excellent low noise figures and distinctive density spectral shape. Further transport measurement evidences the breakdown originals from a ballistic avalanche phenomenon, where the sub-MFP BP channel enables both electrons and holes to impact-ionize the lattice and abruptly amplify the current without scattering from the obstacles in a deterministic nature. Our results shed light on the development of advanced photodetectors and efficiently facilitating carriers on the nanoscale.

cond-mat.mtrl-sci↗

arXiv2018

Proximity-Induced Superconductivity with Subgap Anomaly in Type II Weyl Semi-Metal WTe2

Due to the non-trivial topological band structure in type-II Weyl semimetal Tungsten ditelluride (WTe2), unconventional properties may emerge in its superconducting phase. While realizing intrinsic superconductivity has been challenging in the type-II Weyl semimetal WTe2, proximity effect may open an avenue for the realization of superconductivity. Here, we report the observation of proximity-induced superconductivity with a long coherence length along c axis in WTe2 thin flakes based on a WTe2/NbSe2 van der Waals heterostructure. Interestingly, we also observe anomalous oscillations of the differential resistance during the transition from superconducting to normal state. Theoretical calculations show excellent agreement with experimental results, revealing that such a sub-gap anomaly is the intrinsic property of WTe2 in superconducting state induced by the proximity effect. Our findings enrich the understanding of superconducting phase of type-II Weyl semimetals, and pave the way for their future applications in topological quantum computing.

cond-mat.supr-con↗

arXiv2017

Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2 represents another intriguing example, in which the Mott insulator phase is intimately entangled with a series of complex charge-density-wave (CDW) orders. More interestingly, it has been recently found that 1T-TaS2 undergoes a Mott-insulator-to-superconductor transition induced by high pressure, charge doping, or isovalent substitution. The nature of the Mott insulator phase and transition mechanism to the conducting state is still under heated debate. Here, by combining scanning tunneling microscopy (STM) measurements and first-principles calculations, we investigate the atomic scale electronic structure of 1T-TaS2 Mott insulator and its evolution to the metallic state upon isovalent substitution of S with Se. We identify two distinct types of orbital textures - one localized and the other extended - and demonstrates that the interplay between them is the key factor that determines the electronic structure. Especially, we show that the continuous evolution of the charge gap visualized by STM is due to the immersion of the localized-orbital-induced Hubbard bands into the extended-orbital-spanned Fermi sea, featuring a unique evolution from a Mott gap to a charge-transfer gap. This new mechanism of orbital-driven Mottness collapse revealed here suggests an interesting route for creating novel electronic state and designing future electronic devices.

cond-mat.str-el↗