arXiv subjects

Nicholas P. Butch

Publications and source records attributed to Nicholas P. Butch.

At least 73 records · Page 4Linked to original sources

arXiv2018

Quantum Spin Fragmentation in Kagome Ice Ho3Mg2Sb3O14

A promising route to realize entangled magnetic states combines geometrical frustration with quantum-tunneling effects. Spin-ice materials are canonical examples of frustration, and Ising spins in a transverse magnetic field are the simplest many-body model of quantum tunneling. Here, we show that the tripod kagome lattice material Ho3Mg2Sb3O14 unites an ice-like magnetic degeneracy with quantum-tunneling terms generated by an intrinsic splitting of the Ho3+ ground-state doublet, realizing a frustrated transverse Ising model. Using neutron scattering and thermodynamic experiments, we observe a symmetry-breaking transition at T*~0.32 K to a remarkable quantum state with three peculiarities: a continuous magnetic excitation spectrum down to T~0.12K; a macroscopic degeneracy of ice-like states; and a fragmentation of the spin into periodic and aperiodic components strongly affected by quantum fluctuations. Our results establish that Ho3Mg2Sb3O14 realizes a spin-fragmented state on the kagome lattice, with intrinsic quantum dynamics generated by a homogeneous transverse field.

cond-mat.str-el↗

arXiv2017

Pressure Tuning of Collapse of Helimagnetic Structure in Au$_2$Mn

We identify the phase boundary between spiral spin and ferromagnetic phases in Au$_2$Mn at a critical pressure of 16.4 kbar, as determined by neutron diffraction, magnetization and magnetoresistance measurements. The temperature-dependent critical field at a given pressure is accompanied by a peak in magnetoresistance and a step in magnetization. The critical field decreases with increasing temperature and pressure. The critical pressure separating the spiral phase and ferromagnetism coincides with the disappearance of the magnetroresistance peak, where the critical field goes to zero. The notable absence of an anomalous Hall effect in the the ferromagnetic phase is attributable to the high conductivity of this material.

cond-mat.mtrl-sci↗

arXiv2017

Quantum Critical Behavior in the Asymptotic Limit of High Disorder: Entropy Stabilized NiCoCr0.8 Alloys

The behavior of matter near a quantum critical point (QCP) is one of the most exciting and challenging areas of physics research. Emergent phenomena such as high-temperature superconductivity are linked to the proximity to a QCP. Although significant progress has been made in understanding quantum critical behavior in some low dimensional magnetic insulators, the situation in metallic systems is much less clear. Here we demonstrate that NiCoCrx single crystal alloys are remarkable model systems for investigating QCP physics in a metallic environment. For NiCoCrx alloys with x = 0.8, the critical exponents associated with a ferromagnetic quantum critical point (FQCP) are experimentally determined from low temperature magnetization and heat capacity measurements. For the first time, all of the five critical exponents ( gamma-subT =1/2 , beta-subT = 1, delta = 3/2, nuz-subm = 2, alpha-bar-subT = 0) are in remarkable agreement with predictions of Belitz-Kirkpatrick-Vojta (BKV) theory in the asymptotic limit of high disorder. Using these critical exponents, excellent scaling of the magnetization data is demonstrated with no adjustable parameters. We also find a divergence of the magnetic Gruneisen parameter, consistent with a FQCP. This work therefore demonstrates that entropy stabilized concentrated solid solutions represent a unique platform to study quantum critical behavior in a highly tunable class of materials.

cond-mat.str-el↗

arXiv2016

The Tricritical Point of the f-electron Antiferromagnet USb2 Driven by High Magnetic Fields

In pulsed magnetic fields up to 65T and at temperatures below the Néel transition, our magnetization and magnetostriction measurements reveal a field-induced metamagnetic-like transition that is suggestive of an antiferromagnetic to polarized paramagnetic or ferrimagnetic ordering. Our data also suggests a change in the nature of this metamagnetic-like transition from second- to first-order-like near a tricritical point at T_{tc} ~145K and H_{c}~52T. At high fields for H>H_{c} we found a decreased magnetic moment roughly half of the moment reported in low field measurements. We propose that \mathit{f-p} hybridization effects and magnetoelastic interactions drive the decreased moment, lack of saturation at high fields, and the decreased phase boundary.

cond-mat.str-el↗

arXiv2016

Distinct magnetic spectra in the hidden order and antiferromagnetic phases in URu2-xFexSi2

We use neutron scattering to compare the magnetic excitations in the hidden order (HO) and antiferromagnetic (AFM) phases in URu2-xFexSi2 as a function of Fe concentration. The magnetic excitation spectra change significantly between x = 0.05 and x = 0.10, following the enhancement of the AFM ordered moment, in good analogy to the behavior of the parent compound under applied pressure. Prominent lattice-commensurate low-energy excitations characteristic of the HO phase vanish in the AFM phase. The magnetic scattering is dominated by strong excitations along the Brillouin zone edges, underscoring the important role of electron hybridization to both HO and AFM phases, and the similarity of the underlying electronic structure. The stability of the AFM phase is correlated with enhanced local-itinerant electron hybridization.

cond-mat.str-el↗

arXiv2016

Emergent Order in the Kagome Ising Magnet Dy3Mg2Sb3O14

The kagome lattice -- a two-dimensional (2D) arrangement of corner-sharing triangles -- is at the forefront of the search for exotic states generated by magnetic frustration. Such states have been observed experimentally for Heisenberg and planar spins. In contrast, frustration of Ising spins on the kagome lattice has previously been restricted to nano-fabricated systems and spin-ice materials under applied magnetic field. Here, we show that the layered Ising magnet Dy3Mg2Sb3O14 hosts an emergent order predicted theoretically for individual kagome layers of in-plane Ising spins. Neutron-scattering and bulk thermomagnetic measurements, supported by Monte Carlo simulations, reveal a phase transition at T* = 0.3 K from a disordered spin-ice like regime to an "emergent charge ordered" state in which emergent charge degrees of freedom exhibit three-dimensional order while spins remain partially disordered. Our results establish Dy3Mg2Sb3O14 as a tuneable system to study interacting emergent charges arising from kagome Ising frustration.

cond-mat.str-el↗

arXiv2016

Pressure-resistant intermediate valence in Kondo insulator SmB6

Resonant x-ray emission spectroscopy (RXES) was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB6. Applied pressure reduces the f-occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. Over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.

cond-mat.str-el↗

arXiv2015

Spin Jam: a quantum-fluctuation-induced glassy state of a frustrated magnet

Since the discovery of spin glasses in dilute magnetic systems, their study has been largely focused on understanding randomness and defects as the driving mechanism. The same paradigm has also been applied to explain glassy states found in dense frustrated systems. Recently, however, it has been theoretically suggested that different mechanisms, such as quantum fluctuations and topological features, may induce glassy states in defect-free spin systems, far from the conventional dilute limit. Here we report experimental evidence for the existence of a glassy state, that we call a spin jam, in the vicinity of the clean limit of a frustrated magnet, which is insensitive to a low concentration of defects. We have studied the effect of impurities on SrCr9pGa12-9pO19 (SCGO(p)), a highly frustrated magnet, in which the magnetic Cr3+ (s=3/2) ions form a quasi-two-dimensional triangular system of bi-pyramids. Our experimental data shows that as the nonmagnetic Ga3+ impurity concentration is changed, there are two distinct phases of glassiness: a distinct exotic glassy state, which we call a "spin jam", for high magnetic concentration region (p>0.8) and a cluster spin glass for lower magnetic concentration, (p<0.8). This observation indicates that a spin jam is a unique vantage point from which the class of glassy states in dense frustrated magnets can be understood.

cond-mat.str-el↗

arXiv2015

Spectroscopic determination of the atomic f-electron symmetry underlying hidden order in URu$_2$Si$_2$

The low temperature hidden order state of URu$_2$Si$_2$ has long been a subject of intense speculation, and is thought to represent an as yet undetermined many-body quantum state not realized by other known materials. Here, X-ray absorption spectroscopy (XAS) and high resolution resonant inelastic X-ray scattering (RIXS) are used to observe electronic excitation spectra of URu$_2$Si$_2$, as a means to identify the degrees of freedom available to constitute the hidden order wavefunction. Excitations are shown to have symmetries that derive from a correlated $5f^2$ atomic multiplet basis that is modified by itinerancy. The features, amplitude and temperature dependence of linear dichroism are in agreement with ground states that closely resemble the doublet $Γ_5$ crystal field state of uranium.

cond-mat.mtrl-sci↗

arXiv2015

Ambipolar Surface State Thermoelectric Power of Topological Insulator Bi2Se3

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near charge neutrality point and at low temperatures, the gate dependent thermoelectric power follows the semiclassical Mott relation using the expected surface state density of states, but is larger than expected at high electron doping, possibly reflecting a large density of states in the bulk gap. The thermoelectric power factor shows significant enhancement near the electron-hole puddle carrier density ~ 0.5 x 1012 cm-2 per surface at all temperatures. Together with the expected reduction of lattice thermal conductivity in low dimensional structures, the results demonstrate that nanostructuring and Fermi level tuning of three dimensional topological insulators can be promising routes to realize efficient thermoelectric devices.

cond-mat.mes-hall↗

arXiv2015

Symmetry and correlations underlying Hidden Order in URu2Si2

We experimentally investigate the symmetry in the Hidden Order (HO) phase of intermetallic URu2Si2 by mapping the lattice and magnetic excitations via inelastic neutron and x-ray scattering measurements in the HO and high-temperature paramagnetic phases. At all temperatures the excitations respect the zone edges of the body-centered tetragonal paramagnetic phase, showing no signs of reduced spatial symmetry, even in the HO phase. The magnetic excitations originate from transitions between hybridized bands and track the Fermi surface, whose feature are corroborated by the phonon measurements. Due to a large hybridization energy scale, a full uranium moment persists in the HO phase, consistent with a lack of observed crystal-field-split states. Our results are inconsistent with local order parameter models and the behavior of typical density waves. We suggest that an order parameter that does not break spatial symmetry would naturally explain these characteristics.

cond-mat.str-el↗

arXiv2014

Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice

We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the inter-surface capacitance $C_{TI}$ and the surface state energy-density relationship $μ$(n), which is found to be consistent with independent ARPES measurements. At high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.

cond-mat.mes-hall↗

arXiv2012

Coherent Topological Transport on the Surface of Bi2Se3

The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in the symplectic universality class and uniquely among 2D systems remains metallic and cannot be localized by (time-reversal symmetric) disorder. However, in finite-size samples inter-surface coupling can destroy the topological protection. The question arises: At what size can a thin TI sample be treated as having decoupled topological surface states? We show that weak anti-localization(WAL) is extraordinarily sensitive to sub-meV coupling between top and bottom topological surfaces, and the surfaces of a TI film may be coherently coupled even for thicknesses as large as 12 nm. For thicker films we observe the signature of a true 2D topological metal: perfect weak anti-localization in quantitative agreement with two decoupled surfaces in the symplectic symmetry class.

cond-mat.mes-hall↗

arXiv2012

Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation from the nearby bulk valence band, while above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime linear resistivity vs. temperature reflects intrinsic electron-acoustic phonon scattering. Quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/\hbarvF = 4.7 Å-1. This strong phonon scattering in the Bi2Se3 surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 μS per surface and ~10,000 cm2/Vs.

cond-mat.mtrl-sci↗

arXiv2012

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate the most fundamental signature of the STI: ambipolar metallic electronic transport in the topological surface of an insulating bulk. Here we show that the surfaces of thin (<10 nm), low-doped Bi2Se3 (\approx10^17/cm3) crystals are strongly electrostatically coupled, and a gate electrode can completely remove bulk charge carriers and bring both surfaces through the Dirac point simultaneously. We observe clear surface band conduction with linear Hall resistivity and well-defined ambipolar field effect, as well as a charge-inhomogeneous minimum conductivity region. A theory of charge disorder in a Dirac band explains well both the magnitude and the variation with disorder strength of the minimum conductivity (2 to 5 e^2/h per surface) and the residual (puddle) carrier density (0.4 x 10^12 cm^-2 to 4 x 10^12 cm^-2). From the measured carrier mobilities 320 cm^2/Vs to 1,500 cm^2/Vs, the charged impurity densities 0.5 x 10^13 cm^-2 to 2.3 x 10^13 cm^-2 are inferred. They are of a similar magnitude to the measured doping levels at zero gate voltage (1 x 10^13 cm^-2 to 3 x 10^13 cm^-2), identifying dopants as the charged impurities.

cond-mat.mes-hall↗

arXiv2012

Insulating behavior in ultra-thin bismuth selenide field effect transistors

Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.

cond-mat.mes-hall↗

arXiv2012

Topological insulator quantum dot with tunable barriers

Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV, with additional features implying excited states.

cond-mat.mes-hall↗

arXiv2011

Superconductivity in the topological semimetal YPtBi

The noncentrosymmetric Half Heusler compound YPtBi exhibits superconductivity below a critical temperature T_c = 0.77 K with a zero-temperature upper critical field H_c2(0) = 1.5 T. Magnetoresistance and Hall measurements support theoretical predictions that this material is a topologically nontrivial semimetal having a surprisingly low positive charge carrier density of 2 x 10^18 cm^-3. Unconventional linear magnetoresistance and beating in Shubnikov-de Haas oscillations point to spin-orbit split Fermi surfaces. The sensitivity of magnetoresistance to surface roughness suggests a possible contribution from surface states. The combination of noncentrosymmetry and strong spin-orbit coupling in YPtBi presents a promising platform for the investigation of topological superconductivity.

cond-mat.supr-con↗