arXiv subjects

Nicolas Clement

Publications and source records attributed to Nicolas Clement.

8 recordsLinked to original sources

arXiv2025

QBIOL: A quantum bioelectrochemical software based on point stochastic processes

Bioelectrochemistry is crucial for understanding biological functions and driving applications in synthetic biology, healthcare, and catalysis. However, current simulation methods fail to capture both the stochastic nature of molecular motion and electron transfer across the relevant picosecond-to-minute timescales. We present QBIOL, a web-accessible software that integrates molecular dynamics, applied mathematics, GPU programming, and quantum charge transport to address this challenge. QBIOL enables quantitative stochastic electron transfer simulations and has the potential to reproduce numerically any (bio) electrochemical experiments. We illustrate this potential by comparing our simulations with experimental data on the current generated by electrode-attached redox-labeled DNA, or by nanoconfined redox species, in response to a variety of electrical excitation waveforms, configurations of interest in biosensing and catalysis. The adaptable architecture of QBIOL extends to the development of devices for quantum and molecular technologies, positioning our software as a powerful tool for enabling new research in this rapidly evolving field.

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arXiv2022

Electrochemical Shot-Noise of a Redox Monolayer

Redox monolayers are the base for a wide variety of devices including high-frequency molecular diodes or biomolecular sensors. We introduce a formalism to describe the electrochemical shot-noise of such monolayer, confirmed experimentally at room temperature in liquid. The proposed method, carried out at equilibrium, avoids parasitic capacitance, increases the sensitivity and allows to obtain quantitative information such as the electronic coupling (or standard electron transfer rates), its dispersion and the number of molecules. Unlike in solid-state physics, the homogeneity in energy levels and transfer rates in the monolayer yields a Lorentzian spectrum. This first step for shot-noise studies in molecular electrochemical systems opens perspectives for quantum transport studies in liquid environment at room temperature as well as highly sensitive measurements for bioelectrochemical sensors.

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arXiv2016

A 17 GHz Molecular Rectifier

Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable to reach ultimate scaling. However, so far, functional molecular devices have been only demonstrated at low frequency. Here, we demonstrate molecular diodes operating up to 17.8 GHz. DC (direct current) and RF (radio frequency) properties were simultaneously measured on a large array of molecular junctions composed of gold nanocrystal electrodes, ferrocenyl undecanethiol molecules, and the tip of an interferometric scanning microwave microscope. The present nanometer-scale molecular diodes offer a current density increase by several orders of magnitude compared to that of micrometer-scale molecular diodes, allowing RF operation. The measured S11 parameters show a diode rectification ratio of 12 dB which is linked to the rectification behavior of the DC conductance. From the RF measurements, we extrapolate a cut-off frequency of 520 GHz. A comparison with the silicon RFSchottky diodes architecture suggests that the RF-molecular diodes are extremely attractive for scaling and high-frequency operation.

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arXiv2012

Role of Hydration on the Electronic Transport through Molecular Junctions on Silicon

Molecular electronics is a fascinating area of research with the ability to tune device properties by a chemical tailoring of organic molecules. However, molecular electronics devices often suffer from dispersion and lack of reproducibility of their electrical performances. Here, we show that water molecules introduced during the fabrication process or coming from the environment can strongly modify the electrical transport properties of molecular junctions made on hydrogen-terminated silicon. We report an increase in conductance by up to three orders of magnitude, as well as an induced asymmetry in the current-voltage curves. These observations are correlated with a specific signature of the dielectric response of the monolayer at low frequency. In addition, a random telegraph signal is observed for these junctions with macroscopic area. Electrochemical charge transfer reaction between the semiconductor channel and H+/H2 redox couple is proposed as the underlying phenomenon. Annealing the samples at 150°C is an efficient way to suppress these water-related effects. This study paves the way to a better control of molecular devices and has potential implications when these monolayers are used as hydrophobic layers or incorporated in chemical sensors.

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arXiv2012

Conductance statistics from a large array of sub-10 nm molecular junctions

Devices made of few molecules constitute the miniaturization limit that both inorganic and organic-based electronics aspire to reach. However, integration of millions of molecular junctions with less than 100 molecules each has been a long technological challenge requiring well controlled nanometric electrodes. Here we report molecular junctions fabricated on a large array of sub-10 nm single crystal Au nanodots electrodes, a new approach that allows us to measure the conductance of up to a million of junctions in a single conducting Atomic Force Microscope (C-AFM) image. We observe two peaks of conductance for alkylthiol molecules. Tunneling decay constant (beta) for alkanethiols, is in the same range as previous studies. Energy position of molecular orbitals, obtained by transient voltage spectroscopy, varies from peak to peak, in correlation with conductance values.

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arXiv2011

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report an extraction of the capacitance down to 0.55 aF for a silicon FET with a nanoscale wire channel whose width and length are 15 and 50 nm, respectively. The extraction can be achieved by using a combination of four kinds of measurements: current characteristics modulated by double gates, random-telegraph-signal noise induced by trapping and detrapping of a single electron, dielectric polarization noise, and current characteristics showing Coulomb blockade at low temperature. The extraction of such a small gate capacitance enables us to evaluate electron mobility in a nanoscale wire using a classical model of current characteristics of a FET.

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arXiv2010

Relaxation dynamics in covalently bonded organic monolayers on silicon

We study the dynamic electrical response of a silicon-molecular monolayer-metal junctions and we observe two contributions in the admittance spectroscopy data. These contributions are related to dipolar relaxation and molecular organization in the monolayer in one hand, and the presence of defects at the silicon/molecule interface in the other hand. We propose a small signal equivalent circuit suitable for the simulations of these molecular devices in commercial device simulators. Our results concern monolayers of alkyl chains considered as a model system but can be extended to other molecular monolayers. These results open door to a better control and optimization of molecular devices.

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arXiv2010

1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f^y power spectrum noise with 1< y <1.2. We observe a slight bias dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with (\partial I/\partial V)^2 . A model is proposed showing qualitative agreements with our experimental data.

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