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Ning Xia

Publications and source records attributed to Ning Xia.

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Eight-unit-cell electronic modulations in cuprates originating from local molecular orbitals

The pair density wave (PDW) state with eight-unit-cell (8a0) periodicity has been widely regarded as the primary order in cuprates, yet its existence and origin remain subjects of intense debate. Using spectroscopic imaging scanning tunneling microscopy, we observe spatial modulations of the electronic states with approximately 8a0 periodicity in both the superconducting and insulating regimes of hole-doped Ca2CuO2Cl2 cuprate. We find that the 8a0 spatial patterns are generated by the formation of molecular orbitals by doped holes, which organize into 4a0*4a0 plaquettes as the basic unit. Our results identify the 4a0 molecular orbital as the fundamental electronic building block in cuprates, while the 8a0 PDW represents a spatial subharmonic that emerges at sufficiently high doping.

cond-mat.supr-con

Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages

This study demonstrates a wafer-scale growth of a 2-inch Si-doped $\beta$-Ga2O3 (100) epitaxial wafer and the realization of uniform, high-voltage lateral $\beta$-Ga2O3 MOSFET arrays. The 2-inch homoepitaxial $\beta$-Ga2O3 (100) film grown by MOCVD exhibit excellent crystalline uniformity with an average rocking curve FWHM of ~27.0 arcsec and a low surface roughness less than 1 nm, alongside a uniform net doping concentration on the value of 4.60 $\times$ 1E17 cm-3. The fabricated MOSFETs deliver a threshold voltage of -31.75 V, a drain-current on/off ratio over 1E9, a specific on-resistance of 126.52 mohm$\cdot$cm2 and breakdown voltage exceeding 3 kV. Statistical analysis across the entire wafer presents good device uniformity, with threshold voltages ranging from -28 V to -36 V, output current densities of 60-75 mA/mm, and a breakdown voltage over 3 kV. These results provide the demonstration using the 2-inch $\beta$-Ga2O3 epitaxial wafer to realize high-voltage $\beta$-Ga2O3 MOSFETs with wafer-scale performance uniformity for next-generation power device application.

cond-mat.mtrl-sci

Half-filled metal and molecular-orbital-mediated pairing in cuprate

The cuprates exhibit anomalous momentum-space structure with antinodal gap and nodal arc in the underdoped regime, which evolves into a complete hole-type Fermi surface with a large Luttinger volume in the overdoped regime. The real-space electronic structure is also quite complex, as characterized by microscopic inhomogeneities and intertwined density wave orders. Here we show that doped holes in cuprate form localized electronic molecules consisting of 4a0 plaquettes, and each plaquette contains approximately two holes. The effective local doping level is thus around 1/8, which is sufficient to destroy the underlying AF order and more importantly, recovers the half-filled metallic state of the original CuO2 plane. The restored Fermi surface, hosting one hole per unit cell, is consistent with experimental results and satisfies the Luttinger theorem. We then construct the momentum-space structure of the half-filled metal by considering the real-space configuration of electronic molecules. We show that the electronic potential with 4a0 periodicity imposed by the plaquettes and the quantum size effect of electronic molecules obliterate the nested antinodal Fermi surface sheets, leaving behind short arcs with coherent quasiparticles around the node. We propose that two doped holes in each plaquette occupy the shared molecular orbital and form a spin singlet, which can mediate the pairing of itinerant holes on the remnant Fermi surface of the half-filled metal. The electric dipole moment between the molecular orbitals and the dopant ions may also provide a novel attractive interaction between itinerant holes. This phenomenological model for pair formation between itinerant holes on the half-filled Fermi surface mediated by localized molecular orbitals resolves several core issues concerning the mechanism of superconductivity in cuprates.

cond-mat.supr-con

Exploration on Real World Assets and Tokenization

This study delves into the tokenization of real-world assets (RWAs) on the blockchain with the objective of augmenting liquidity and refining asset management practices. By conducting an exhaustive analysis of the technical procedures implicated and scrutinizing case studies of existing deployments, this research evaluates the advantages, hurdles, and prospective advancements of blockchain technology in reshaping conventional asset management paradigms.

cs.CR

Highly coherent grain boundaries induced by local pseudo-mirror symmetry in $\beta$-Ga2O3

Grain boundaries have extensive influence on the performance of crystal materials. However, the atomic-scale structure and its relation with local and crystallographic symmetries remain elusive in low-symmetry crystals. Herein, we find that the local pseudo-mirror-symmetric atomic layer is the common physical origin of a series of highly coherent grain boundaries in the low-symmetry $\beta$-Ga2O3 crystal. These include the (100) twin boundary and an emerging series of $(h-1'0'2)/(h+1'0'\bar{2})$ coherent asymmetric grain boundaries (CAGBs). Owing to the local pseudo-mirror symmetry and the special geometric relation of the $\beta$-Ga2O3 conventional cell, these CAGBs place 80% of the boundary atoms in pseudo-coincident sites, exhibiting high coherence under the coincident-site lattice model. With a combination of density functional theory calculations, Czochralski growth experiment, and atomic-scale characterizations, the structure and stability of the $(002)/(20\bar{2})$-A CAGB are confirmed, with a boundary energy density as low as 0.36 J/m2. This CAGB is responsible for the spontaneous formation of a twinned defect facet at the surface steps during the epitaxy growth of $\beta$-Ga2O3, warranting a substrate orientation selection rule for $\beta$-Ga2O3. Through this study, we provide insights into the grain boundary physics in the low-symmetry $\beta$-Ga2O3 crystal while emphasizing the importance of the local pseudo-symmetries in the low-symmetry crystals.

cond-mat.mtrl-sci

Unveiling Stripe-shaped Charge Density Modulations in Doped Mott Insulators

Inspired by recent experimental findings, we investigate various scenarios of the doped Hubbard model with impurity potentials. We calculate the lattice Green's function in a finite-size cluster and then map it to the continuum real space, which allows for a direct comparison with scanning-tunneling-microscopy measurements on the local density of states. Our simulations successfully reproduce experimental data, including the characteristic stripe- and ladder-shaped structures observed in cuprate systems. Moreover, our results establish a connection between previous numerical findings on stripe-ordered ground states and experimental observations, thus providing new insights into microscopic mechanisms of the Mott insulator to superconductor transition in cuprates.

cond-mat.str-el

Judging Chemical Reaction Practicality From Positive Sample only Learning

Chemical reaction practicality is the core task among all symbol intelligence based chemical information processing, for example, it provides indispensable clue for further automatic synthesis route inference. Considering that chemical reactions have been represented in a language form, we propose a new solution to generally judge the practicality of organic reaction without considering complex quantum physical modeling or chemistry knowledge. While tackling the practicality judgment as a machine learning task from positive and negative (chemical reaction) samples, all existing studies have to carefully handle the serious insufficiency issue on the negative samples. We propose an auto-construction method to well solve the extensively existed long-term difficulty. Experimental results show our model can effectively predict the practicality of chemical reactions, which achieves a high accuracy of 99.76\% on real large-scale chemical lab reaction practicality judgment.

cs.CL