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arXiv · 2606.07973

Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages

Ningtao Liu·Hengrui Zhang·Shujun Zhu·Zhihao Yan·Dongyang Han·Shen Hu·Li Ji·Ning Xia·Jichun Ye·Wenrui Zhang
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Abstract

This study demonstrates a wafer-scale growth of a 2-inch Si-doped $\beta$-Ga2O3 (100) epitaxial wafer and the realization of uniform, high-voltage lateral $\beta$-Ga2O3 MOSFET arrays. The 2-inch homoepitaxial $\beta$-Ga2O3 (100) film grown by MOCVD exhibit excellent crystalline uniformity with an average rocking curve FWHM of ~27.0 arcsec and a low surface roughness less than 1 nm, alongside a uniform net doping concentration on the value of 4.60 $\times$ 1E17 cm-3. The fabricated MOSFETs deliver a threshold voltage of -31.75 V, a drain-current on/off ratio over 1E9, a specific on-resistance of 126.52 mohm$\cdot$cm2 and breakdown voltage exceeding 3 kV. Statistical analysis across the entire wafer presents good device uniformity, with threshold voltages ranging from -28 V to -36 V, output current densities of 60-75 mA/mm, and a breakdown voltage over 3 kV. These results provide the demonstration using the 2-inch $\beta$-Ga2O3 epitaxial wafer to realize high-voltage $\beta$-Ga2O3 MOSFETs with wafer-scale performance uniformity for next-generation power device application.

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Ningtao Liu, Hengrui Zhang, Shujun Zhu, Zhihao Yan, Dongyang Han, Shen Hu, Li Ji, Ning Xia, Jichun Ye, Wenrui Zhang. 2026-06-06. Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages. https://arxiv.org/abs/2606.07973

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