arXiv subjects

Nouredine Rassoul

Publications and source records attributed to Nouredine Rassoul.

3 recordsLinked to original sources

arXiv2025

The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T = 4 K - 300 K) and multi-frequency (f = 1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors.

physics.app-ph↗

arXiv2024

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab

Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is challenging with an integration of front side gate, a scaled back gated flow has been optimized by multiplying design of experiments around contacts and material engineering. We then successfully demonstrated sub-40mV $σ$(VTH_ON) in scaled IGZO nFETs. Regarding the performance and the VTH_ON control, a new IGZO phase is also reported. A model of dopants location is proposed to better explain the experimental results reported in literature.

cond-mat.mtrl-sci↗

arXiv2017

Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step toward the realization of a majority gate, even though further downscaling may be required. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications

physics.app-ph↗