arXiv subjects

O. Caha

Publications and source records attributed to O. Caha.

16 recordsLinked to original sources

arXiv2024

Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition

Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a novel spin-splitting in the band structure. This study delves into the intricate relativistic electronic structure of an AM material, alpha-MnTe. Employing temperature-dependent angle-resolved photoelectron spectroscopy across the AM phase transition, we elucidate the emergence of a relativistic valence band splitting concurrent with the establishment of magnetic order. This discovery is validated through disordered local moment calculations, modeling the influence of magnetic order on the electronic structure and confirming the magnetic origin of the observed splitting. The temperature-dependent splitting is ascribed to the advent of relativistic spin-splitting resulting from the strengthening of AM order in alpha-MnTe as the temperature decreases. This sheds light on a previously unexplored facet of this intriguing material.

cond-mat.mtrl-sci↗

arXiv2023

Electronic band structure of Sb2Te3

Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the \Gamma point, or along the trigonal axis, and its width reaches Eg = 190 meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method.

cond-mat.mtrl-sci↗

arXiv2022

Stabilization of the oxygen concentration in La$_{0.3}$Sr$_{0.7}$CoO$_{3-{\delta}}$ thin films by LaAlO$_3$ capping layer

We have grown La$_{0.3}$Sr$_{0.7}$CoO$_{3-{\delta}}$ thin films by pulsed laser deposition on (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_3$)$_{0.7}$ substrates with and without a protective LaAlO$_3$ capping layer and investigated their structural and magnetic properties. We have observed that, in the uncapped films, the Curie temperature strongly decreased after annealing in helium atmosphere, and it significantly decreased even in samples stored for several weeks at room temperature. The decrease of the Currie temperature is caused by an increase of the concentration of oxygen vacancies, {\delta}. However, we show that already a 3 nm thin LaAlO$_3$ capping layer can essentially conserve {\delta} at room temperature, and it considerably slows down the formation of oxygen vacancies at elevated temperatures.

cond-mat.mtrl-sci↗

arXiv2022

Photo-induced insulator-to-metal transition and coherent acoustic phonon propagation in LaCoO$_3$ thin films explored by femtosecond pump-probe ellipsometry

We have studied ultrafast dynamics of thin films of LaCoO$_3$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ with femtosecond pump-probe ellipsometry in the energy range of 1.6-3.4 eV. We have observed a large pump-induced transfer of spectral weight in LaCoO$_3$ that corresponds to an insulator-to-metal transition. The photo-induced metallic state initially relaxes via a fast process with a decay constant of about 200 fs. Both LaCoO$_3$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ exhibit a significant secondary transient structure in the 1-30 ps range. Results of measurements on films with different thicknesses demonstrate that it corresponds to a propagation of an acoustic strain pulse. On timescales longer than 100 ps, heat diffusion to the substrate takes place that can be modelled with a bi-exponential decay.

cond-mat.str-el↗

arXiv2020

Mn-rich MnSb2Te4: A topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K

Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intrinsic magnetic topological insulators with A1B2C4 stoichiometry. However, the first representative, MnBi2Te4, is antiferromagnetic with 25 K N\'eel temperature and strongly n-doped. Here, we show that p-type MnSb2Te4, previously considered topologically trivial, is a ferromagnetic topological insulator in the case of a few percent of Mn excess. It shows (i) a ferromagnetic hysteresis with record high Curie temperature of 45-50 K, (ii) out-of-plane magnetic anisotropy and (iii) a two-dimensional Dirac cone with the Dirac point close to the Fermi level which features (iv) out-of-plane spin polarization as revealed by photoelectron spectroscopy and (v) a magnetically induced band gap that closes at the Curie temperature as demonstrated by scanning tunneling spectroscopy. Moreover, it displays (vi) a critical exponent of magnetization beta~1, indicating the vicinity of a quantum critical point. Ab initio band structure calculations reveal that the slight excess of Mn that substitutionally replaces Sb atoms provides the ferromagnetic interlayer coupling. Remaining deviations from the ferromagnetic order, likely related to this substitution, open the inverted bulk band gap and render MnSb2Te4 a robust topological insulator and new benchmark for magnetic topological insulators.

cond-mat.mtrl-sci↗

arXiv2020

Landau level spectroscopy of Bi$_2$Te$_3$

Here we report on Landau level spectroscopy in magnetic fields up to 34 T performed on a thin film of topological insulator Bi$_2$Te$_3$ epitaxially grown on a BaF$_2$ substrate. The observed response is consistent with the picture of a direct-gap semiconductor in which charge carriers closely resemble massive Dirac particles. The fundamental band gap reaches $E_g=(175\pm 5)$~meV at low temperatures and it is not located on the trigonal axis, thus displaying either six or twelvefold valley degeneracy. Notably, our magneto-optical data do not indicate any band inversion. This suggests that the fundamental band gap is relatively distant from the $\Gamma$ point where profound inversion exists andgives rise to relativistic-like surface states of Bi$_2$Te$_3$.

cond-mat.mes-hall↗

arXiv2018

Large magnetic gap at the Dirac point in a Mn-induced Bi$_2$Te$_3$ heterostructure

Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac point but all attempts to observe it directly have been unsuccessful. The gap size is considered crucial to overcoming the present limitations of the QAHE, which so far occurs only at temperatures one to two orders of magnitude below its principle limit set by the ferromagnetic Curie temperature $T_C$. Here, we use low temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi$_2$Te$_3$ films, which is present only below $T_C$. Surprisingly, the gap turns out to be $\sim$90 meV wide, which not only exceeds $k_BT$ at room temperature but is also 5 times larger than predicted by density functional theory. By an exhaustive multiscale structure characterization we show that this enhancement is due to a remarkable structure modification induced by Mn doping. Instead of a disordered impurity system, it forms an alternating sequence of septuple and quintuple layer blocks, where Mn is predominantly incorporated in the septuple layers. This self-organized heterostructure substantially enhances the wave-function overlap and the size of the magnetic gap at the Dirac point, as recently predicted. Mn-doped Bi$_2$Se$_3$ forms a similar heterostructure, however, only a large, nonmagnetic gap is formed. We explain both differences based on the higher spin-orbit interaction in Bi$_2$Te$_3$ with the most important consequence of a magnetic anisotropy perpendicular to the films, whereas for Bi$_2$Se$_3$ the spin-orbit interaction it is too weak to overcome the dipole-dipole interaction. Our findings provide crucial insights for pushing the lossless transport properties of topological insulators towards room-temperature applications.

cond-mat.mtrl-sci↗

arXiv2018

The energy scale of Dirac electrons in Cd3As2

Cadmium arsenide (Cd3As2) has recently became conspicuous in solid-state physics due to several reports proposing that it hosts a pair of symmetry-protected 3D Dirac cones. Despite vast investigations, a solid experimental insight into the band structure of this material is still missing. Here we fill one of the existing gaps in our understanding of Cd3As2, and based on our Landau level spectroscopy study, we provide an estimate for the energy scale of 3D Dirac electrons in this system. We find that the appearance of such charge carriers is limited - contrary to a widespread belief in the solid-state community - to a relatively small energy scale (below 40 meV).

cond-mat.mes-hall↗

arXiv2018

Non-uniform carrier density in Cd$_3$As$_2$ evidenced by optical spectroscopy

We report the detailed optical properties of Cd$_3$As$_2$ crystals in a wide parameter space: temperature, magnetic field, carrier concentration and crystal orientation. We investigate high-quality crystals synthesized by three different techniques. In all the studied samples, independently of how they were prepared and how they were treated before the optical experiments, our data indicate conspicuous fluctuations in the carrier density (up to 30%). These charge puddles have a characteristic scale of 100 $μ$m, they become more pronounced at low temperatures, and possibly, they become enhanced by the presence of crystal twinning. The Drude response is characterized by very small scattering rates ($\sim 1$ meV) for as-grown samples. Mechanical treatment, such as cutting or polishing, influences the optical properties of single crystals, by increasing the Drude scattering rate and also modifying the high frequency optical response. Magneto-reflectivity and Kerr rotation are consistent with electron-like charge carriers and a spatially non-uniform carrier density.

cond-mat.mtrl-sci↗

arXiv2018

Direct observation of double exchange in ferromagnetic La$_{0.7}$Sr$_{0.3}$CoO$_3$ by broadband ellipsometry

We present results of our broadband ellipsometry measurements of the optical response of ferromagnetic La$_{0.7}$Sr$_{0.3}$CoO$_3$. Our data show that the ferromagnetic transition is accompanied by a transfer of optical spectral weight from an absorption band centered at 1.5 eV to a narrow component of the Drude-like peak. The associated reduction of the intraband kinetic energy is significantly larger than $k_{\rm B}T_c$, confirming that the double exchange plays a major role in the ferromagnetism of doped cobaltites. In conjunction with results of recent theoretical studies, the temperature dependence of the Drude-like peak suggests that the double exchange is mediated by $t_{2g}$ orbitals.

cond-mat.str-el↗

arXiv2017

Interband absorption edge in topological insulators Bi$_2$(Te$_{1-x}$Se$_x$)$_3$

We have investigated the optical properties of thin films of topological insulators Bi$_{2}$Te$_{3}$, Bi$_{2}$Se$_{3}$ and their alloys Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ on BaF$_{2}$ substrates by a combination of infrared ellipsometry and reflectivity in the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in Bi$_2$Se$_3$, after the correction for the Burstein-Moss effect, we find the value of direct bandgap of $215\pm10$ meV at 10 K. Our data supports the picture that Bi$_2$Se$_3$ has a direct band gap located at the $Γ$ point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward oriented paraboloid, i.e. without a camel-back structure. In Bi$_2$Te$_3$, the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent GW band structure calculations suggesting that the direct interband transition does not occur at the $Γ$ point but near the Z-F line of the Brillouin zone. In the Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ alloy, the energy of the onset of direct interband transitions exhibits a maximum near $x=0.3$ (i.e. the composition of Bi$_2$Te$_2$Se), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.

cond-mat.mtrl-sci↗

arXiv2016

Magneto-optical signature of massless Kane electrons in Cd3As2

We report on optical reflectivity experiments performed on Cd3As2 over a broad range of photon energies and magnetic fields. The observed response clearly indicates the presence of 3D massless charge carriers. The specific cyclotron resonance absorption in the quantum limit implies that we are probing massless Kane electrons rather than symmetry-protected 3D Dirac particles. The latter may appear at a smaller energy scale and are not directly observed in our infrared experiments.

cond-mat.mes-hall↗

arXiv2016

Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi$_{1-x}$Mn$_x)_2$Se$_3$

Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn doping does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a novel mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection.

cond-mat.mes-hall↗

arXiv2011

Surface morphology and magnetic anisotropy in (Ga,Mn)As

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

cond-mat.mtrl-sci↗

arXiv2009

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces. We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the interfaces. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch.

cond-mat.mtrl-sci↗

arXiv2006

Nonlinear evolution of surface morphology in InAs/AlAs superlattices via surface diffusion

Continuum simulations of self-organized lateral compositional modulation growth in InAs/AlAs short-period superlattices on InP substrate are presented. Results of the simulations correspond quantitatively to the results of synchrotron x-ray diffraction experiments. The time evolution of the compositional modulation during epitaxial growth can be explained only including a nonlinear dependence of the elastic energy of the growing epitaxial layer on its thickness. From the fit of the experimental data to the growth simulations we have determined the parameters of this nonlinear dependence. It was found that the modulation amplitude don't depend on the values of the surface diffusion constants of particular elements.

cond-mat.mtrl-sci↗