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arXiv · 2312.07402

Electronic band structure of Sb2Te3

I. Mohelsky·J. Wyzula·F. Le Mardele·F. Abadizaman·O. Caha·A. Dubroka·X. D. Sun·C. W. Cho·B. A. Piot·M. F. Tanzim·I. Aguilera·G. Bauer·G. Springholz·M. Orlita
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Abstract

Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the \Gamma point, or along the trigonal axis, and its width reaches Eg = 190 meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method.

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I. Mohelsky, J. Wyzula, F. Le Mardele, F. Abadizaman, O. Caha, A. Dubroka, X. D. Sun, C. W. Cho, B. A. Piot, M. F. Tanzim, I. Aguilera, G. Bauer, G. Springholz, M. Orlita. 2023-12-12. Electronic band structure of Sb2Te3. https://doi.org/10.1103/physrevb.109.165205

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