arXiv subjects

O. D. Dubon

Publications and source records attributed to O. D. Dubon.

22 records · Page 2Linked to original sources

arXiv2005

Ferromagnetism in Ga1-xMnxP: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

We demonstrate that in ferromagnetic Ga1-xMnxP exchange is mediated by holes localized in a Mn-derived band. For x<0.06, infrared absorption and photoconductivity spectra indicate the presence of a Mn impurity band which is not merged with the valence band. At temperatures above TC (<65 K) electrical transport is dominated by excitation across this energy gap while nearest neighbor hopping dominates below TC. Magnetization measurements reveal a moment of 3.5 Bohr magnetons per substitutional Mn, while the large anomalous Hall signal unambiguously demonstrates that the ferromagnetism is carrier-mediated.

cond-mat.mtrl-sci↗

arXiv2004

Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning

A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated.

cond-mat.mtrl-sci↗

arXiv2004

Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey

We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization.

cond-mat.mtrl-sci↗

arXiv2003

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. When only 1.3% of Te atoms is replaced with oxygen in a Zn0.88Mn0.12Te crystal (with band gap of 2.32 eV) the resulting band structure consists of two direct band gaps with interband transitions at ~1.77 eV and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model in which the interactions between the oxygen-derived band and the conduction band are considered. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

cond-mat.mtrl-sci↗