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P. Kim

Publications and source records attributed to P. Kim.

At least 37 records · Page 2Linked to original sources
arXiv2015

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS2 in the two-dimensional (2D) limit. We first demonstrate that the intrinsic properties of atomically-thin flakes are preserved by encapsulation with hexagonal boron nitride in inert atmosphere. We use this facile assembly method together with TEM and transport measurements to probe the nature of the 2D state and show that its conductance is dominated by discommensurations. The discommensuration structure can be precisely tuned in few-layer samples by an in-plane electric current, allowing continuous electrical control over the discommensuration-melting transition in 2D.

cond-mat.mes-hall↗
arXiv2014

Landau level spectroscopy of electron-electron interactions in graphene

We present magneto-Raman scattering studies of electronic inter Landau level excitations in quasi-neutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle picture of non-interacting massless Dirac electrons, but is accounted for by theory when the effect of electron-electron interaction is taken into account. Raman active, zero-momentum inter Landau level excitations in graphene are sensitive to electron-electron interactions due to the non-applicability of the Kohn theorem in this system, with a clearly non-parabolic dispersion relation.

cond-mat.mes-hall↗
arXiv2013

Silicon Detector Dark Matter Results from the Final Exposure of CDMS II

We report results of a search for Weakly Interacting Massive Particles (WIMPS) with the silicon detectors of the CDMS II experiment. This blind analysis of 140.2 kg-days of data taken between July 2007 and September 2008 revealed three WIMP-candidate events with a surface-event background estimate of 0.41^{+0.20}_{-0.08}(stat.)^{+0.28}_{-0.24}(syst.). Other known backgrounds from neutrons and 206Pb are limited to < 0.13 and <0.08 events at the 90% confidence level, respectively. The exposure of this analysis is equivalent to 23.4 kg-days for a recoil energy range of 7-100 keV for a WIMP of mass 10 GeV/c2. The probability that the known backgrounds would produce three or more events in the signal region is 5.4%. A profile likelihood ratio test of the three events that includes the measured recoil energies gives a 0.19% probability for the known-background-only hypothesis when tested against the alternative WIMP+background hypothesis. The highest likelihood occurs for a WIMP mass of 8.6 GeV/c2 and WIMP-nucleon cross section of 1.9e-41 cm2.

hep-ex↗
arXiv2013

Silicon detector results from the first five-tower run of CDMS II

We report results of a search for Weakly Interacting Massive Particles (WIMPs) with the Si detectors of the CDMS II experiment. This report describes a blind analysis of the first data taken with CDMS II's full complement of detectors in 2006-2007; results from this exposure using the Ge detectors have already been presented. We observed no candidate WIMP-scattering events in an exposure of 55.9 kg-days before analysis cuts, with an expected background of ~1.1 events. The exposure of this analysis is equivalent to 10.3 kg-days over a recoil energy range of 7-100 keV for an ideal Si detector and a WIMP mass of 10 GeV/c2. These data set an upper limit of 1.7x10-41 cm2 on the WIMP-nucleon spin-independent cross section of a 10 GeV/c2 WIMP. These data exclude parameter space for spin-independent WIMP-nucleon elastic scattering that is relevant to recent searches for low-mass WIMPs.

astro-ph.CO↗
arXiv2012

Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect

Electrons moving through a spatially periodic lattice potential develop a quantized energy spectrum consisting of discrete Bloch bands. In two dimensions, electrons moving through a magnetic field also develop a quantized energy spectrum, consisting of highly degenerate Landau energy levels. In 1976 Douglas Hofstadter theoretically considered the intersection of these two problems and discovered that 2D electrons subjected to both a magnetic field and a periodic electrostatic potential exhibit a self-similar recursive energy spectrum. Known as Hofstadter's butterfly, this complex spectrum results from a delicate interplay between the characteristic lengths associated with the two quantizing fields, and represents one of the first quantum fractals discovered in physics. In the decades since, experimental attempts to study this effect have been limited by difficulties in reconciling the two length scales. Typical crystalline systems (<1 nm periodicity) require impossibly large magnetic fields to reach the commensurability condition, while in artificially engineered structures (>100 nm), the corresponding fields are too small to completely overcome disorder. Here we demonstrate that moire superlattices arising in bilayer graphene coupled to hexagonal boron nitride provide a nearly ideal-sized periodic modulation, enabling unprecedented experimental access to the fractal spectrum. We confirm that quantum Hall effect features associated with the fractal gaps are described by two integer topological quantum numbers, and report evidence of their recursive structure. Observation of Hofstadter's spectrum in graphene provides the further opportunity to investigate emergent behaviour within a fractal energy landscape in a system with tunable internal degrees of freedom.

cond-mat.mes-hall↗
arXiv2012

Electronic compressibility of layer polarized bilayer graphene

We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D. As a band gap is induced with increasing D, the compressibility minimum at charge neutrality becomes deeper but remains finite, suggesting the presence of localized states within the energy gap. Temperature dependent capacitance measurements show that compressibility is sensitive to the intrinsic band gap. For large displacements, an additional peak appears in the compressibility as a function of density, corresponding to the presence of a 1-dimensional van Hove singularity (vHs) at the band edge arising from the quartic bilayer graphene band structure. For D > 0, the additional peak is observed only for electrons, while D < 0 the peak appears only for holes. This asymmetry that can be understood in terms of the finite interlayer separation and may be useful as a direct probe of the layer polarization.

cond-mat.mes-hall↗
arXiv2011

Monte Carlo Comparisons to a Cryogenic Dark Matter Search Detector with low Transition-Edge-Sensor Transition Temperature

We present results on phonon quasidiffusion and Transition Edge Sensor (TES) studies in a large, 3 inch diameter, 1 inch thick [100] high purity germanium crystal, cooled to 50 mK in the vacuum of a dilution refrigerator, and exposed with 59.5 keV gamma-rays from an Am-241 calibration source. We compare calibration data with results from a Monte Carlo which includes phonon quasidiffusion and the generation of phonons created by charge carriers as they are drifted across the detector by ionization readout channels. The phonon energy is then parsed into TES based phonon readout channels and input into a TES simulator.

physics.ins-det↗
arXiv2011

Validation of Phonon Physics in the CDMS Detector Monte Carlo

The SuperCDMS collaboration is a dark matter search effort aimed at detecting the scattering of WIMP dark matter from nuclei in cryogenic germanium targets. The CDMS Detector Monte Carlo (CDMS-DMC) is a simulation tool aimed at achieving a deeper understanding of the performance of the SuperCDMS detectors and aiding the dark matter search analysis. We present results from validation of the phonon physics described in the CDMS-DMC and outline work towards utilizing it in future WIMP search analyses.

astro-ph.IM↗
arXiv2011

Comparison of CDMS [100] and [111] oriented germanium detectors

The Cryogenic Dark Matter Search (CDMS) utilizes large mass, 3" diameter $\times$ 1" thick target masses as particle detectors. The target is instrumented with both phonon and ionization sensors and comparison of energy in each channel provides event-by-event classification of electron and nuclear recoils. Fiducial volume is determined by the ability to obtain good phonon and ionization signal at a particular location. Due to electronic band structure in germanium, electron mass is described by an anisotropic tensor with heavy mass aligned along the symmetry axis defined by the [111] Miller index (L valley), resulting in large lateral component to the transport. The spatial distribution of electrons varies significantly for detectors which have their longitudinal axis orientations described by either the [100] or [111] Miller indices. Electric fields with large fringing component at high detector radius also affect the spatial distribution of electrons and holes. Both effects are studied in a 3 dimensional Monte Carlo and the impact on fiducial volume is discussed.

physics.ins-det↗
arXiv2011

Graphene field-effect transistors based on boron nitride gate dielectrics

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs.

cond-mat.mes-hall↗
arXiv2010

Multicomponent fractional quantum Hall effect in graphene

We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be explained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.

cond-mat.mes-hall↗
arXiv2010

A Multi-Chamber System for Analyzing the Outgassing, Deposition, and Associated Optical Degradation Properties of Materials in a Vacuum

We report on the Camera Materials Test Chamber, a multi-vessel apparatus which analyzes the outgassing consequences of candidate materials for use in the vacuum cryostat of a new telescope camera. The system measures the outgassing products and rates of samples of materials at different temperatures, and collects films of outgassing products to measure the effects on light transmission in six optical bands. The design of the apparatus minimizes potential measurement errors introduced by background contamination.

physics.ins-det↗
arXiv2010

Diameter Dependence of the Transport Properties of Antimony Telluride Nanowires

We report measurements of electronic, thermoelectric, and galvanomagnetic properties of individual single crystal antimony telluride (Sb2Te3) nanowires with diameters in the range of 20-100 nm. Temperature dependent resistivity and thermoelectric power (TEP) measurements indicate hole dominant diffusive thermoelectric generation, with an enhancement of the TEP for smaller diameter wires up to 110 uV/K at T = 300 K. We measure the magnetoresistance, in magnetic fields both parallel and perpendicular to the nanowire [110] axis, where strong anisotropic positive magnetoresistance behavior was observed.

cond-mat.mes-hall↗
arXiv2010

Observation of magneto-phonon resonance of Dirac fermions in graphite

Coherent coupling of Dirac fermion magneto-excitons with an optical phonon is observed in graphite as marked magnetic-field dependent splittings and anti-crossing behavior of the two coupled modes. The sharp magneto-phonon resonance occurs in regions of the graphite sample with properties of superior single-layer graphene having enhanced lifetimes of Dirac fermions. The greatly reduced carrier broadening to values below the graphene electron-phonon coupling constant explains the appearance of sharp resonances that reveal a fundamental interaction of Dirac fermions.

cond-mat.mtrl-sci↗
arXiv2010

Boron nitride substrates for high-quality graphene electronics

Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres.

cond-mat.mes-hall↗
arXiv2010

Interaction-induced shift of the cyclotron resonance of graphene using infrared spectroscopy

We report a study of the cyclotron resonance (CR) transitions to and from the unusual $n=0$ Landau level (LL) in monolayer graphene. Unexpectedly, we find the CR transition energy exhibits large (up to 10%) and non-monotonic shifts as a function of the LL filling factor, with the energy being largest at half-filling of the $n=0$ level. The magnitude of these shifts, and their magnetic field dependence, suggests that an interaction-enhanced energy gap opens in the $n=0$ level at high magnetic fields. Such interaction effects normally have limited impact on the CR due to Kohn's theorem [W. Kohn, Phys. Rev. {\bf 123}, 1242 (1961)], which does not apply in graphene as a consequence of the underlying linear band structure.

cond-mat.mes-hall↗
arXiv2009

Symmetry breaking of the zero energy Landau level in bilayer graphene

The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high field regime, the eight-fold degeneracy in the zero energy Landau level is completely lifted, exhibiting new quantum Hall states corresponding filling factors $ν=$0, 1, 2, & 3. Measurements of the activation energy gap in tilted magnetic fields suggest that the Landau level splitting at the newly formed $ν=$1, 2, & 3 filling factors are independent of spin, consistent with the formation of a quantum Hall ferromagnet. In addition, measurements taken at the $ν$ = 0 charge neutral point show that, similar to single layer graphene, the bilayer becomes insulating at high fields.

cond-mat.mes-hall↗