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arXiv · 1101.4712

Graphene field-effect transistors based on boron nitride gate dielectrics

I. Meric·C. R. Dean·A. F. Young·J. Hone·P. Kim·K. L. Shepard
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Abstract

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs.

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I. Meric, C. R. Dean, A. F. Young, J. Hone, P. Kim, K. L. Shepard. 2011-01-25. Graphene field-effect transistors based on boron nitride gate dielectrics. https://doi.org/10.1109/iedm.2010.5703419

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