arXiv subjects

P. Kossacki

Publications and source records attributed to P. Kossacki.

At least 37 records · Page 2Linked to original sources

arXiv2016

Anisotropy of in-plane hole g-factor in CdTe/ZnTe quantum dots

Optical studies of a bright exciton provide only limited information about the hole anisotropy in a quantum dot. In this work we present a universal method to study heavy hole anisotropy using a dark exciton in a moderate in-plane magnetic field. By analysis of the linear polarization of the dark exciton photoluminescence we identify both isotropic and anisotropic contributions to the hole g-factor. We employ this method for a number of individual self-assembled CdTe/ZnTe quantum dots, demonstrating a variety of behaviors of in-plane hole g-factor: from almost fully anisotropic to almost isotropic. We conclude that, in general, both contributions play an important role and neither contribution can be neglected.

cond-mat.mes-hall↗

arXiv2016

Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots

We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting $δ_{1}=$0.14 meV ($δ_{1}=$0.47 meV); $g$-factor $g=$2.12 ($g=$1.71); diamagnetic shift $γ=$2.5 $μ$eV$/$T$^{2}$ ($γ=$1.3 $μ$eV$/$T$^{2}$). We find also statistically significant correlations between various parameters describing internal structure of excitonic complexes.

cond-mat.mes-hall↗

arXiv2015

Epitaxial growth and Photoluminescence Excitation spectroscopy of CdSe Quantum Dots in (Zn,Cd)Se barrier

Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the energy of Mn$^{2+}$ ions internal transition (2.1 eV). This opens a perspective for implementation of epitaxial CdSe QDs doped with several Mn ions as, e. g., the light sources in high quantum yield magnetooptical devices. Polarization resolved Photoluminescence Excitation measurements of individual QDs reveal sharp ($Γ<$ 150 $μ$eV) maxima and transfer of optical polarization to QD confining charged exciton state with efficiency attaining 26 %. The QD doping with single Mn$^{2+}$ ions is achieved.

cond-mat.mes-hall↗

arXiv2015

Tuning valley polarization in a WSe2 monolayer with a tiny magnetic field

In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($σ^+$ or $σ^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations. However, an extremely rapid valley pseudospin relaxation (at the time scale of picoseconds) occurring for optically bright (electric-dipole active) excitons imposes some limitations on the development of opto-valleytronics. Here we show that inter-valley scattering of excitons can be significantly suppressed in a $\mathrm{WSe}_2$ monolayer, a direct-gap two-dimensional semiconductor with the exciton ground state being optically dark. We demonstrate that the already inefficient relaxation of the exciton pseudospin in such system can be suppressed even further by the application of a tiny magnetic field of $\sim$100 mT. Time-resolved spectroscopy reveals the pseudospin dynamics to be a two-step relaxation process. An initial decay of the pseudospin occurs at the level of dark excitons on a time scale of 100 ps, which is tunable with a magnetic field. This decay is followed by even longer decay ($>1$ ns), once the dark excitons form more complex objects allowing for their radiative recombination. Our finding of slow valley pseudospin relaxation easily manipulated by the magnetic field open new prospects for engineering the dynamics of the valley pseudospin in transition metal dichalcogenides.

cond-mat.mes-hall↗

arXiv2015

Multiple magneto-phonon resonances in graphene

Our low-temperature magneto-Raman scattering measurements performed on graphene-like locations on the surface of bulk graphite reveal a new series of magneto-phonon resonances involving both K-point and Gamma-point phonons. In particular, we observe for the first time the resonant splitting of three crossing excitation branches. We give a detailed theoretical analysis of these new resonances. Our results highlight the role of combined excitations and the importance of multi-phonon processes (from both K and Gamma points) for the relaxation of hot carriers in graphene.

cond-mat.mes-hall↗

arXiv2015

Magnetic Ground State of an Individual Fe2+ Ion in Strained Semiconductor Nanostructure

We investigate spin properties of a Fe2+ dopant, known for having single nondegenerate ground state in bulk host semiconductor. Due to zero magnetic moment such a ground state is of little use for spintronics and solotronics. We show that this well-established picture of Fe2+ spin configuration can be contradicted by subjecting the Fe2+ ion to sufficiently high strain, e.g., resulting from lattice mismatched epitaxial heterostructures. Our analysis reveals that high strain induces qualitative change in the ion energy spectrum and results in doubly degenerate ground state with spin projection Sz=+/-2. An experimental proof of this concept is demonstrated using a new system: an epitaxial quantum dot containing individual Fe2+ ion. Magnetic character of the Fe2+ ground state in a CdSe/ZnSe dot is revealed in photoluminescence experiments by exploiting a coupling between a confined exciton and the single iron impurity.

cond-mat.mes-hall↗

arXiv2014

Single photon emitters in exfoliated WSe2 structures

Crystal structure imperfections in solids often act as efficient carrier trapping centers which, when suitably isolated, act as sources of single photon emission. The best known examples of such attractive imperfections are wellwidth or composition fluctuations in semiconductor heterostructures (resulting in a formation of quantum dots) and coloured centers in wide bandgap (e. g., diamond) materials. In the case of recently investigated thin films of layered compounds, the crystal imperfections may logically be expected to appear at the edges of commonly investigated few-layer flakes of these materials, exfoliated on alien substrates. Here, we report on comprehensive optical microspectroscopy studies of thin layers of tungsten diselenide, WSe2, a representative semiconducting dichalcogenide with a bandgap in the visible spectral range. At the edges of WSe2 flakes, transferred onto Si/SiO2 substrates, we discover centers which, at low temperatures, give rise to sharp emission lines (0.1 meV linewidth). These narrow emission lines reveal the effect of photon antibunching, the unambiguous attribute of single photon emitters. The optical response of these emitters is inherently linked to two-dimensional properties of the WSe2 monolayer, as they both give rise to luminescence in the same energy range, have nearly identical excitation spectra and very similar, characteristically large Zeeman effects. With advances in the structural control of edge imperfections, thin films of WSe2 may provide added functionalities, relevant for the domain of quantum optoelectronics.

cond-mat.mes-hall↗

arXiv2014

Efficient injection of spin-polarized excitons and optical spin orientation of a single Mn2+ ion in a CdSe/ZnSe quantum dot

Circularly polarized optical excitation is used to demonstrate the efficient injection of spin-polarized excitons to individual self-assembled CdSe quantum dots in ZnSe barrier. The exciton spin-transfer is studied by means of polarization-resolved single dot spectroscopy performed in magnetic field applied in Faraday configuration. Detailed analysis of the neutral exciton photoluminescence spectra reveals the presence of exciton spin relaxation during its lifetime in a quantum dot. This process is seen for both nonmagnetic dots and those containing single Mn$^{2+}$ ions. Taking this into account we determine the spin-polarization degree of excitons injected to a dot under circularly polarized below-the-barrier optical excitation at 488 nm. It is found to be close to 40% in the entire range of the applied magnetic field. Exploiting the established spin-conserving excitation channel we demonstrate the optical spin orientation of a single Mn$^{2+}$ ion embedded in a CdSe/ZnSe quantum dot.

cond-mat.mes-hall↗

arXiv2014

Coherent precession of an individual 5/2 spin

We present a direct observation of a coherent spin precession of an individual Mn$^{2+}$ ion, having both electronic and nuclear spins equal to 5/2, embedded in a CdTe quantum dot and placed in magnetic field. The spin state evolution is probed in a time-resolved pump-probe measurement of absorption of the single dot. The experiment reveals subtle details of the large-spin coherent dynamics, such as non-sinusoidal evolution of states occupation, and beatings caused by the strain-induced differences in energy levels separation. Sensitivity of the large-spin impurity on the crystal strain opens the possibility of using it as a local strain probe.

cond-mat.mes-hall↗

arXiv2014

A micro-magneto-Raman scattering study of graphene on a bulk graphite substrate

We report on a magneto-Raman scattering study of graphene flakes located on the surface of a bulk graphite substrate. By spatially mapping the Raman scattering response of the surface of bulk graphite with an applied magnetic field, we pinpoint specific locations which show the electronic excitation spectrum of graphene. We present the characteristic Raman scattering signatures of these specific locations. We show that such flakes can be superimposed with another flake and still exhibit a graphene-like excitation spectrum. Two different excitation laser energies (514.5 and 720 nm) are used to investigate the excitation wavelength dependence of the electronic Raman scattering signal.

cond-mat.mes-hall↗

arXiv2014

Unintentional high density p-type modulation doping of a GaAs/AlAs core-multi-shell nanowire

Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an \emph{unintentional} p-type doping. Magneto-optical studies of such a GaAs/AlAs core multi-shell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1~nm GaAs layer in the shell. Micro-photoluminescence in high magnetic field shows a clear signature of avoided crossings of the $n=0$ Landau level emission line with the $n=2$ Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large 2D hole density in the structure.

cond-mat.mes-hall↗

arXiv2014

Electrical switch to the resonant magneto-phonon effect in graphene

We report a comprehensive study of the tuning with electric fields of the resonant magneto-exciton optical phonon coupling in gated graphene. For magnetic fields around $B \sim 25$ T which correspond to the range of the fundamental magneto-phonon resonance, the electron-phonon coupling can be switched on and off by tuning the position of the Fermi level in order to Pauli block the two fundamental inter Landau level excitations. The effects of such a profound change in the electronic excitation spectrum are traced through investigations of the optical phonon response in polarization resolved magneto-Raman scattering experiments. We report on the observation of a splitting of the phonon feature with satellite peaks developing, at particular values of the Landau level filling factor, on the low or on the high energy side of the phonon, depending on the relative energy of the discrete electronic excitation and of the optical phonon. Shifts of the phonon energy as large as $\pm60$ cm$^{-1}$ are observed close to the resonance. The intraband electronic excitation, the cyclotron resonance, is shown to play a relevant role in the observed spectral evolution of the phonon response.

cond-mat.mes-hall↗

arXiv2013

MBE grown microcavities based on selenium and tellurium compounds

In this work, we present three groups of microcavities: based on selenium compounds only, based on tellurium compounds only, and structures based on mixed selenium and tellurium compounds. We focus on their possible applications in the field of optoelectronic devices and fundamental physics (VCSELs, narrow range light sources, studies of cavity-polariton electrodynamics) in a range of wavelength from 540 to 760 nm.

cond-mat.mes-hall↗

arXiv2013

Introducing single Mn2+ ions into spontaneously coupled quantum dot pairs

We present the photoluminescence excitation study of the self-assembled CdTe/ZnTe quantum dots doped with manganese ions. We demonstrate the identification method of spontaneously coupled quantum dots pairs containing single Mn2+ ions. As the result of the coupling, the resonant absorption of the photon in one quantum dot is followed by the exciton transfer into a neighboring dot. It is shown that the Mn2+ ion might be present in the absorbing, emitting or both quantum dots. The magnetic properties of the Mn2+ spin are revealed by a characteristic sixfold splitting of the excitonic line. The statistics of the value of this splitting is analyzed for the large number of the dots and gives the information on the maximum density of the neutral exciton wave function.

cond-mat.mes-hall↗

arXiv2013

Designing quantum dots for solotronics

Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non-radiative recombination, regarded as a severe problem, limited development of quantum dots with magnetic ions. Our photoluminescence studies on, so far unexplored, individual CdTe dots with single cobalt ions and individual CdSe dots with single manganese ions show, however, that even if energetically allowed, the single ion related non-radiative recombination is negligible in such zero-dimensional structures. This opens solotronics for a wide range of even not yet considered systems. Basing on the results of our single spin relaxation experiments and on the material trends, we identify optimal magnetic ion-quantum dot systems for implementation of a single-ion based spin memory.

cond-mat.mes-hall↗

arXiv2013

Magnetooptical properties of (Ga,Fe)N layers

Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the grow conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism (MCD). Possible reasons for differences in magnetic response determined by MCD and SQUID measurements are discussed.

cond-mat.mtrl-sci↗

arXiv2013

Optical study of electron-electron exchange interaction in CdTe/ZnTe quantum dots

We present an experimental study of electron-electron exchange interaction in self-assembled CdTe/ZnTe quantum dots based on the photoluminescence measurements. The character and strength of this interaction are obtained by simultaneous observation of various recombination channels of a doubly negatively charged exciton, including previously unrecognized emission lines related to the electron-singlet configuration in the final state. A typical value of the electron singlet-triplet splitting, which corresponds to the exchange integral of electron-electron interaction, has been determined as 20.4 meV with a spread of 1.4 meV across the wide population of quantum dots. We also evidence an unexpected decrease of energy difference between the singlet and triplet states under a magnetic field in Faraday geometry.

cond-mat.mes-hall↗

arXiv2012

Circular dichroism of magneto-phonon resonance in doped graphene

Polarization resolved, Raman scattering response due to E$_{2g}$ phonon in monolayer graphene has been investigated in magnetic fields up to 29 T. The hybridization of the E$_{2g}$ phonon with only the fundamental inter Landau level excitation (involving the n=0 Landau level) is observed and only in one of the two configurations of the circularly crossed polarized excitation and scattered light. This polarization anisotropy of the magneto-phonon resonance is shown to be inherent to relatively strongly doped graphene samples, with carrier concentration typical for graphene deposited on SiO$_2$.

cond-mat.mes-hall↗