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P. Kossacki

Publications and source records attributed to P. Kossacki.

At least 55 records · Page 3Linked to original sources

Polarization resolved magneto-Raman scattering of graphene-like domains on natural graphite

The micro-Raman scattering response of a graphene-like location on the surface of bulk natural graphite is investigated both at $T=\unit{4.2}{K}$ and at room temperature in magnetic fields up to 29 T. Two different polarization configurations, co-circular and crossed-circular, are employed in order to determine the Raman scattering selection rules. Several distinct series of electronic excitations are observed and we discuss their characteristic shapes and amplitudes. In particular, we report a clear splitting of the signals associated with the inter-Landau level excitations $-n\rightarrow+n$. Furthermore, we observe the pronounced interaction of the zone-center E$_{\text{2g}}$-phonon with three different sets of electronic excitations. Possible origins for these graphene-like inclusions on the surface of bulk graphite are discussed.

cond-mat.mes-hall↗

Electronic excitations and electron-phonon coupling in bulk graphite through Raman scattering in high magnetic fields

We use polarized magneto-Raman scattering to study purely electronic excitations and the electron-phonon coupling in bulk graphite. At a temperature of 4.2 K and in magnetic fields up to 28 T we observe $K$-point electronic excitations involving Landau bands with $Δ|n|=0$ and with $Δ|n|=\pm2$ that can be selected by controlling the angular momentum of the excitation laser and of the scattered light. The magneto-phonon effect involving the $E_{2g}$ optical phonon and $K$-point inter Landau bands electronic excitations with $Δ|n|=\pm1$ is revealed and analyzed within a model taking into account the full $k_z$ dispersion. These polarization resolved results are explained in the frame of the Slonczewski-Weiss-McClure (SWM) model which directly allows to quantify the electron-hole asymmetry.

cond-mat.mes-hall↗

Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer

Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence lines with a low spatial density. We identify lines related to neutral exciton and biexciton as well as trions. Exciton emission antibunching (second order correlation value of g^2(0)=0.16) and biexciton-exciton emission cascade prove non-classical emission from the dots and confirm their potential as single photon sources.

cond-mat.mes-hall↗

Magneto-Raman scattering of graphene on graphite: Electronic and phonon excitations

Magneto-Raman scattering experiments from the surface of graphite reveal novel features associated to purely electronic excitations which are observed in addition to phonon-mediated resonances. Graphene-like and graphite domains are identified through experiments with $\sim 1μm$ spatial resolution performed in magnetic fields up to 32T. Polarization resolved measurements emphasize the characteristic selection rules for electronic transitions in graphene. Graphene on graphite displays the unexpected hybridization between optical phonon and symmetric across the Dirac point inter Landau level transitions. The results open new experimental possibilities - to use light scattering methods in studies of graphene under quantum Hall effect conditions.

cond-mat.mes-hall↗

Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O

This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchange, and the spin-orbit interactions. A quantitative description of the magnetoreflectivity findings indicates that the free excitons A and B are associated with the Gamma_7 and Gamma_9 valence bands, respectively, the order reversed as compared to wurtzite GaN. Furthermore, our results show that the magnitude of the giant exciton splittings, specific to dilute magnetic semiconductors, is unusual: the magnetoreflectivity data is described by an effective exchange energy N_0(beta-alpha)=+0.2+/-0.1 eV, what points to small and positive N_0 beta. It is shown that both the increase of the gap with x and the small positive value of the exchange energy N_0 beta corroborate recent theory describing the exchange splitting of the valence band in a non-perturbative way, suitable for the case of a strong p-d hybridization.

cond-mat.mtrl-sci↗

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot

We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence engineering of light-Mn interaction.

cond-mat.mes-hall↗

High field magneto-transmission investigation of natural graphite

Magneto-transmission measurements in magnetic fields in the range B=20-60T have been performed to probe the H and K-point Landau level transitions in natural graphite. At the H-point, two series of transitions, whose energy evolves as $\sqrt{B}$ are observed. A reduced Slonczewski, Weiss and McClure (SWM) model with only two parameters to describe the intra-layer (gamma0) and inter-layer (gamma1) coupling correctly describes all observed transitions. Polarization resolved measurements confirm that the observed apparent splitting of the H-point transitions at high magnetic field cannot be attributed to an asymmetry of the Dirac cone.

cond-mat.mes-hall↗

Brightening of dark excitons in a single quantum dot containing a single magnetic ion

A promising method to investigate dark exciton transitions in quantum dots is presented. The optical recombination of the dark exciton is allowed when the exciton state is coupled with an individual magnetic impurity (manganese ion). It is shown that the efficient radiative recombination is possible when the exchange interaction with the magnetic ion is accompanied by a mixing of the heavy-light hole states related to an in-plane anisotropy of the quantum dot. It is also shown that the dark exciton recombination is an efficient channel of manganese spin orientation.

cond-mat.mes-hall↗

Effect of a magnetic field on the two-phonon Raman scattering in graphene

We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the graphene crystal plane at liquid helium temperature. A shift to lower frequency and broadening of this band is observed as the magnetic field is increased from 0 to 33 T. At fields up to 5--10 T the changes are quadratic in the field while they become linear at higher magnetic fields. This effect is explained by the curving of the quasiclassical trajectories of the photo-excited electrons and holes in the magnetic field, which enables us (i) to extract the electron inelastic scattering rate, and (ii) to conclude that electronic scattering accounts for about half of the measured width of the 2D peak.

cond-mat.mes-hall↗

Slowing hot carrier relaxation in graphene using a magnetic field

A degenerate pump--probe technique is used to investigate the non equilibrium carrier dynamics in multi--layer graphene. Two distinctly different dynamics of the carrier relaxation are observed. A fast relaxation ($\sim 50$ fs) of the carriers after the initial effect of phase space filling followed by a slower relaxation ($\sim 4$ ps) due to thermalization. Both relaxation processes are less efficient when a magnetic field is applied at low temperatures which is attributed to the suppression of the electron-electron Auger scattering due to the non equidistant Landau level spacing of the Dirac fermions in graphene.

cond-mat.mes-hall↗

Tuning the electron-phonon coupling in multilayer graphene with magnetic fields

Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings each time the optically active inter Landau level transition is tuned in resonance with the E$_{2g}$ phonon excitation (at 196 meV). The width of the phonon Raman scattering response also shows pronounced variations and is enhanced in conditions of resonance. The experimental results are well reproduced by a model that gives directly the strength of the electron-phonon interaction.

cond-mat.mtrl-sci↗

Ferromagnetic properties of p-(Cd,Mn)Te quantum wells: Interpretation of magneto-optical measurements by Monte Carlo simulations

In order to single out dominant phenomena that account for carrier-controlled magnetism in p-(Cd,Mn)Te quantum wells we have carried out magneto-optical measurements and Monte Carlo simulations of time dependent magnetization. The experimental results show that magnetization relaxation is faster than 20 ns in the paramagnetic state. Decreasing temperature below the Curie temperature Tc results in an increase of the relaxation time but to less than 10 micro seconds. This fast relaxation may explain why the spontaneous spin splitting of electronic states is not accompanied by the presence of non-zero macroscopic magnetization below Tc. Our Monte Carlo results reproduce the relative change of the relaxation time on decreasing temperature. At the same time, the numerical calculations demonstrate that antiferromagnetic spin-spin interactions, which compete with the hole-mediated long-range ferromagnetic coupling, play an important role in magnetization relaxation of the system. We find, in particular, that magnetization dynamics is largely accelerated by the presence of antiferromagnetic couplings to the Mn spins located outside the region, where the holes reside. This suggests that macroscopic spontaneous magnetization should be observable if the thickness of the layer containing localized spins will be smaller than the extension of the hole wave function. Furthermore, we study how a spin-independent part of the Mn potential affects Tc. Our findings show that the alloy disorder potential tends to reduce Tc, the effect being particularly strong for the attractive potential that leads to hole localization.

cond-mat.mtrl-sci↗

Optical manipulation of a single Mn spin in a CdTe-based quantum dot

A system of two coupled CdTe quantum dots, one of them containing a single Mn ion, was studied in continuous wave and modulated photoluminescence, photoluminescence excitation, and photon correlation experiments. Optical writing of information in the spin state of the Mn ion has been demonstrated, using orientation of the Mn spin by spin-polarized carriers transferred from the neighbor quantum dot. Mn spin orientation time values from 20 ns to 100 ns were measured, depending on the excitation power. Storage time of the information in the Mn spin was found to be enhanced by application of a static magnetic field of 1 T, reaching hundreds of microseconds in the dark. Simple rate equation models were found to describe correctly static and dynamical properties of the system.

cond-mat.other↗

Optically induced energy and spin transfer in non-resonantly coupled pairs of self-assembled CdTe/ZnTe quantum dots

Asymmetrical horizontal interdot coupling was demonstrated to exist in a system of a single plane of self-assembled CdTe/ZnTe quantum dots. Photoluminescence excitation (PLE), second order photon correlation and optical orientation were used as main experimental tools. Each individual absorbing dot was identified by a sharp PLE resonance, assigned to neutral exciton transition, while the corresponding emission contained several excitonic transitions of different charge states in another single quantum dot different from the absorbing one. Energy and spin transfer dynamics were studied. A high efficiency of spin transfer was found from optical orientation in a vertical magnetic field (70%) as well as without the magnetic field (40%), in spite of a significant anisotropic exchange splitting of the absorbing dot. Coherent mechanism of linear-to-circular polarization conversion was identified, with an efficiency (43%) close to the theoretical limit of 50%.

cond-mat.other↗

Single spin optical read-out in CdTe/ZnTe quantum dot studied by photon correlation spectroscopy

Spin dynamics of a single electron and an exciton confined in CdTe/ZnTe quantum dot is investigated by polarization-resolved correlation spectroscopy. Spin memory effects extending over at least a few tens of nanoseconds have been directly observed in magnetic field and described quantitatively in terms of a simple rate equation model. We demonstrate an effective (68%) all-optical read-out of the single carrier spin state through probing the degree of circular polarization of exciton emission after capture of an oppositely charged carrier. The perturbation introduced by the pulsed optical excitation serving to study the spin dynamics has been found to be the main source of the polarization loss in the read-out process. In the limit of low laser power the read-out efficiency extrapolates to a value close to 100%. The measurements allowed us as well to determine neutral exciton spin relaxation time ranging from 3.4 +/- 0.1 ns at B = 0 T to 16 +/- 3 ns at B = 5 T.

cond-mat.other↗

Mapping of quantum well eigenstates with semimagnetic probes

We present results of transmission measurements on CdTe quantum wells with thin semimagnetic CdMnTe probe layers embedded in various positions along the growth axis. The presence of the probes allow us to map the probability density functions by two independent methods: analyzing the exciton energy position and the exciton Zeeman splitting. We apply both approaches to map the first three quantum well eigenstates and we find that both of them yield equally accurate results.

cond-mat.mtrl-sci↗

Observation of strong-coupling effects in a diluted magnetic semiconductor (Ga,Fe)N

A direct observation of the giant Zeeman splitting of the free excitons in (Ga,Fe)N is reported. The magnetooptical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p-d exchange energy governing the interaction between Fe^{3+} ions and holes in GaN, N_0 beta^(app) = +0.5 +/- 0.2 eV. This finding corroborates the recent suggestion that the strong p-d hybridization specific to nitrides and oxides leads to significant renormalization of the valence band exchange splitting.

cond-mat.mtrl-sci↗

Excitonic giant Zeeman effect in GaN:Mn^3+

We describe a direct observation of the excitonic giant Zeeman splitting in (Ga,Mn)N, a wide-gap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a shift under magnetic field due to s,p-d exchange interactions. Using an excitonic model, we determine the difference of exchange integrals between Mn^3+ and free carriers in GaN, N_0(alpha-beta)=-1.2 +/- 0.2 eV. Assuming a reasonable value of alpha, this implies a positive sign of beta which corresponds to a rarely observed ferromagnetic interaction between the magnetic ions and the holes.

cond-mat.mtrl-sci↗