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P. L. de Andres

Publications and source records attributed to P. L. de Andres.

26 records · Page 2Linked to original sources

Ballistic Electron Emission Microscopy on CoSi${}_2$/Si(111) interfaces: band structure induced atomic-scale resolution and role of localized surface states

Applying a Keldysh Green`s function method it is shown that hot electrons injected from a STM-tip into a CoSi${}_2$/Si(111) system form a highly focused beam due to the silicide band structure. This explains the atomic resolution obtained in recent Ballistic Electron Emission Microscopy (BEEM) experiments. Localized surface states in the $(2 \times 1)$-reconstruction are found to be responsible for the also reported anticorrugation of the BEEM current. These results clearly demonstrate the importance of bulk and surface band structure effects for a detailed understanding of BEEM data.

cond-mat.mtrl-sci↗

Manifestation of quantum chaos on ordered structures by scattering techniques: application to Low-Energy Electron Diffraction

We analyze statistical probability distributions of intensities collected by diffraction techniques like Low-Energy Electron Diffraction. A simple theoretical model based in hard-sphere potentials and LEED formalism is investigated for different values of relevant parameters: energy, angle of incidence, muffin-tin potential radius, maximum spherical component $l_{max}$, number of stacked layers, and full multiple-scattering or kinematic model. Given a complex enough system (e.g., including multiple scattering by at least two Bravais lattices), the computed probability distributions agree rather well with a $χ^{2}_{2}$ one, characteristic of the Gaussian Unitary Ensemble universality class associated to quantum chaos. A hypothesis on the possible impact of the chaoticity of wavefunctions on correlation factors is tested against the behaviour of the Pendry R-factor and the Root Mean Squared Deviation factor.

cond-mat.mtrl-sci↗

Quantum mechanical analysis of the elastic propagation of electrons in the Au/Si system: application to Ballistic Electron Emission Microscopy

We present a Green's function approach based on a LCAO scheme to compute the elastic propagation of electrons injected from a STM tip into a metallic film. The obtained 2D current distribution in real and reciprocal space furnish a good representation of the elastic component of Ballistic Electron Emission Microscopy (BEEM) currents. Since this component accurately approximates the total current in the near threshold region, this procedure allows --in contrast to prior analyses-- to take into account effects of the metal band structure in the modeling of these experiments. The Au band structure, and in particular its gaps appearing in the [111] and [100] directions provides a good explanation for the previously irreconcilable results of nanometric resolution and similarity of BEEM spectra on both Au/Si(111) and Au/Si(100).

cond-mat.mtrl-sci↗

Hot electron transport in Ballistic Electron Emission Spectroscopy: band structure effects and k-space currents

Using a Green's function approach, we investigate band structure effects in the BEEM current distribution in reciprocal space. In the elastic limit, this formalism provides a 'parameter free' solution to the BEEM problem. At low temperatures, and for thin metallic layers, the elastic approximation is enough to explain the experimental I(V) curves at low voltages. At higher voltages inelastic effects are approximately taken into account by introducing an effective RPA-electron lifetime, much in similarity with LEED theory. For thick films, however, additional damping mechanisms are required to obtain agreement with experiment.

cond-mat.mtrl-sci↗

A k-space transport analysis of the BEEM spectroscopy of Au/Si Schottky barriers

We address the question of the spatial resolution of ballistic electron emission microscopy (BEEM) of Shottky barriers in Au(111)/Si(100) and Au(111)/Si(111) interfaces. A novel combination of Green-function and k-space Ensemble-Monte-Carlo techniques is used to obtain new insights into the spatial and energetic evolution of the STM-tip-induced electrons during their passage through the metallic layer before reaching the metal-semiconductor interface. In particular, it is shown how the effect of band-structure-induced directional focusing of the electrons enforces a reinterpretation of existing experimental data.

cond-mat.mtrl-sci↗

A Transport Analysis of the BEEM Spectroscopy of Au/Si Schottky Barriers

A systematic transport study of the ballistic electron emission microscopy (BEEM) of Au/Si(100) and Au/Si(111) Schottky barriers for different thicknesses of the metal layer and different temperatures is presented. It is shown that the existing experimental data are compatible with a recently predicted bandstructure-induced non-forward electron propagation through the Au(111) layer.

cond-mat.mtrl-sci↗

A theoretical analysis of Ballistic Electron Emission Microscopy: k-space distributions and spectroscopy

We analyze BEEM experiments. At low temperatures and low voltages, near the threshold value of the Schottky barrier, the BEEM current is dominated by the elastic component. Elastic scattering by the lattice results in the formation of focused beams and narrow lines in real space. To obtain the current injected in the semiconductor, we compute the current distribution in reciprocal space and, assuming energy and $k_{\parallel}$ conservation. Our results show an important focalization of the injected electron beam and explain the similarity between BEEM currents for Au/Si(111) and Au/Si(100).

cond-mat.mtrl-sci↗

Manifestation of quantum chaos on scattering techniques: application to low-energy and photo-electron diffraction intensities

Intensities of LEED and PED are analyzed from a statistical point of view. The probability distribution is compared with a Porter-Thomas law, characteristic of a chaotic quantum system. The agreement obtained is understood in terms of analogies between simple models and Berry's conjecture for a typical wavefunction of a chaotic system. The consequences of this behaviour on surface structural analysis are qualitatively discussed by looking at the behaviour of standard correlation factors.

cond-mat.stat-mech↗