arXiv subjects

P. Makk

Publications and source records attributed to P. Makk.

13 recordsLinked to original sources

arXiv2018

Wideband and on-chip excitation for dynamical spin injection into graphene

Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin pumping driven by ferromagnetic resonance is a neat way to circumvent this problem as it produces a pure spin current in the absence of a charge current. Here, we show spin pumping into single layer graphene in micron scale devices. A broadband on-chip RF current line is used to bring micron scale permalloy (Ni$_{80}$Fe$_{20}$) pads to ferromagnetic resonance with a magnetic field tunable resonance condition. At resonance, a spin current is emitted into graphene, which is detected by the inverse spin hall voltage in a close-by platinum electrode. Clear spin current signals are detected down to a power of a few milliwatts over a frequency range of 2 GHz to 8 GHz. This compact device scheme paves the way for more complex device structures and allows the investigation of novel materials.

cond-mat.mes-hall↗

arXiv2018

Signatures of van Hove singularities probed by the supercurrent in a graphene - hBN superlattice

The moiré superlattice induced in graphene by the hexagonal boron nitride substrate modifies strongly the bandstructure of graphene, which manifests itself by the appearance of new Dirac points, accompanied by van Hove singularities. In this work, we present supercurrent measurements in a Josephson junction made from such a graphene superlattice in the long and diffusive regime, where that the supercurrent depends on the Thouless energy. We can then estimate the specific density of states of the graphene superlattice from the combined measurement of the critical current and the normal state resistance. The result matches with theoretical predictions and highlights the strong increase of the density of states at the van Hove singularities. By measuring the magnetic field dependence of the supercurrent, we find the presence of edge currents at these singularities. We explain it by the reduction of the Fermi velocity associated with the flat band at the van Hove singularity, which suppresses the supercurrent in the bulk while the electrons at the edge remain less localized, resulting in an edge supercurrent. We attribute this different behavior of the edges to defects or chemical doping.

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arXiv2017

Contact-less characterizations of encapsulated graphene p-n junctions

Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need of electrical contacts. The presented characterizations pave a fast, sensitive and non-invasive measurement of graphene nanocircuits.

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arXiv2016

Temporal correlations and structural memory effects in break junction measurements

We review data analysis techniques that can be used to study temporal correlations among conductance traces in break junction measurements. We show that temporal histograms are a simple but efficient tool to check the temporal homogeneity of the conductance traces, or to follow spontaneous or triggered temporal variations, like structural modifications in trained contacts, or the emergence of single-molecule signatures after molecule dosing. To statistically analyze the presence and the decay time of temporal correlations, we introduce shifted correlation plots. Finally, we demonstrate that correlations between opening and subsequent closing traces may indicate structural memory effects in atomic-sized metallic and molecular junctions. Applying these methods on measured and simulated gold metallic contacts as a test system, we show that the surface diffusion induced flattening of the broken junctions helps to produce statistically independent conductance traces at room temperature, whereas at low temperature repeating tendencies are observed as long as the contacts are not closed to sufficiently high conductance setpoints. Applying opening-closing correlation analysis on Pt-CO-Pt single-molecule junctions, we demonstrate pronounced contact memory effects and recovery of the molecule for junctions breaking before atomic chains are formed. However, if chains are pulled the random relaxation of the chain and molecule after rupture prevents opening-closing correlations.

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arXiv2016

Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find {\it two} sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transition between singlet and a triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin-based Bell inequalities.

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arXiv2016

Spin transport in fully hexagonal boron nitride encapsulated graphene

We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5 um long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pin-hole free nature of the thin-hBN as an efficient tunnel barrier.

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arXiv2016

Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime

We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that form in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-layer graphene due to the gaps that form between Landau levels, suggesting a way to create gate-defined quantum dots that can be accessed with quantum Hall edge states.

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arXiv2015

Magnetic field tuning and quantum interference in a Cooper pair splitter

Cooper pair splitting (CPS) is a process in which the electrons of naturally occurring spin-singlet pairs in a superconductor are spatially separated using two quantum dots. Here we investigate the evolution of the conductance correlations in an InAs CPS device in the presence of an external magnetic field. In our experiments the gate dependence of the signal that depends on both quantum dots continuously evolves from a slightly asymmetric Lorentzian to a strongly asymmetric Fano-type resonance with increasing field. These experiments can be understood in a simple three - site model, which shows that the nonlocal CPS leads to symmetric line shapes, while the local transport processes can exhibit an asymmetric shape due to quantum interference. These findings demonstrate that the electrons from a Cooper pair splitter can propagate coherently after their emission from the superconductor and how a magnetic field can be used to optimize the performance of a CPS device. In addition, the model calculations suggest that the estimate of the CPS efficiency in the experiments is a lower bound for the actual efficiency.

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arXiv2014

Local electrical tuning of the nonlocal signals in a Cooper pair splitter

A Cooper pair splitter consists of a central superconducting contact, S, from which electrons are injected into two parallel, spatially separated quantum dots (QDs). This geometry and electron interactions can lead to correlated electrical currents due to the spatial separation of spin-singlet Cooper pairs from S. We present experiments on such a device with a series of bottom gates, which allows for spatially resolved tuning of the tunnel couplings between the QDs and the electrical contacts and between the QDs. Our main findings are gate-induced transitions between positive conductance correlation in the QDs due to Cooper pair splitting and negative correlations due to QD dynamics. Using a semi-classical rate equation model we show that the experimental findings are consistent with in-situ electrical tuning of the local and nonlocal quantum transport processes. In particular, we illustrate how the competition between Cooper pair splitting and local processes can be optimized in such hybrid nanostructures.

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arXiv2011

Regular atomic narrowing of Ni, Fe and V nanowires resolved by 2D correlation analysis

We present a novel statistical method for the study of stable atomic configurations in breaking nanowires based on the 2D cross-correlation analysis of conductance versus electrode separation traces. Applying this method, we can clearly resolve the typical evolutions of the conductance staircase in some transition metal nanojunctions (Ni, Fe, V) up to high conductance values. In these metals our analysis demonstrates a very well ordered atomic narrowing of the nanowire, indicating a very regular, stepwise decrease of the number of atoms in the minimal cross section of the junction, in contrast to the majority of the metals. All these features are hidden in traditional conductance histograms.

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arXiv2011

From stochastic single atomic switch to nanoscale resistive memory device

Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to the nanometer sizes. Here we study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, for somewhat larger junctions with diameters of a few nanometers a well defined, reproducible switching behavior is observed which is associated with the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a low size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.

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arXiv2008

Huge negative differential conductance in Au-H2 molecular nanojunctions

Experimental results showing huge negative differential conductance in gold-hydrogen molecular nanojunctions are presented. The results are analyzed in terms of two-level system (TLS) models: it is shown that a simple TLS model cannot produce peaklike structures in the differential conductance curves, whereas an asymmetrically coupled TLS model gives perfect fit to the data. Our analysis implies that the excitation of a bound molecule to a large number of energetically similar loosely bound states is responsible for the peaklike structures. Recent experimental studies showing related features are discussed within the framework of our model.

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arXiv2008

Interaction of hydrogen molecules with superconducting nanojunctions

In this paper the interaction of hydrogen molecules with atomic-sized superconducting nanojunctions is studied. It is demonstrated by conductance histogram measurements that the superconductors niobium, tantalum and aluminum show a strong interaction with hydrogen, whereas for lead a slight interaction is observed, and for tin and indium no significant interaction is detectable. For Nb, Ta and Pb subgap method is applied to determine the transmission eigenvalues of the nanojunctions in hydrogen environment. It is shown, that in Nb and Ta the mechanical behavior of the junction is spectacularly influenced by hydrogen reflected by extremely long conductance traces, but the electronic properties based on the transmission eigenvalues are similar to those of pure junctions. Evidences for the formation of a single-molecule bridge between the electrodes -- as in recently studied platinum hydrogen system -- were not found.

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