arXiv subjects

Patrizio Graziosi

Publications and source records attributed to Patrizio Graziosi.

At least 19 recordsLinked to original sources

arXiv2026

Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices

The integration of thermoelectric devices into mainstream microelectronic technological platform could be a major breakthrough in various fields within the \emph{so-called} Green-IT realm. In this article, the thermoelectric properties of heteroepitaxial SiGeSn alloys, a novel CMOS compatible material system, are evaluated to assess their possible application in thermoelectric devices. To this purpose, starting from the experimentally low lattice thermal conductivity of SiGeSn/Ge/Si layers of about $\sim$1-2 W/m$\cdot$K assessed by means of 3-$\omega$ measurements, the figure of merits are calculated through the use of Boltzmann transport equation, taking into account the relevant inter-valley scattering processes, peculiar of this multi-valley material system. Values for the figure of merit $ZT$ exceeding $1$ have been obtained for both p- and n- type material at operating temperatures within the 300---400 K range, i.e. at a typical On-Chip temperatures. In this interval, the predicted power factor also features very competitive values of the order of 20 $\rm{\mu W/cm\cdot K^2}$. Our finding indicates that this new class of Si-based materials has extremely good prospects for real-world applications, and can further stimulate scientific investigation in this ambit.

cond-mat.mtrl-sci↗

arXiv2026

Carrier scattering considerations and thermoelectric power factors of half-Heuslers

The electronic and thermoelectric (TE) transport properties of 13 n-type and p-type half-Heusler alloys are computationally examined using Boltzmann transport. The electronic scattering times resulting from all relevant phonon interactions and ionized impurity scattering (IIS) are fully accounted for using ab initio extracted parameters. We find that at room temperature the average peak TE power factors (PF) of all materials we examine reside between 5 and 10 mW/mK$^2$. We also find that IIS in combination with the long range polar optical phonon (POP) scattering are more influential in determining the electronic transport and PF over all other non-polar phonon interactions (acoustic and optical phonon transport). In fact, the combination of POP and IIS determines the thermoelectric power factor of the half-Heuslers examined on average by about 65\%. The results highlight the crucial impact of Coulombic scattering process (POP and IIS) on the TE properties of half-Heusler alloys and provide profound insight for understanding transport, which can be applied widely in other complex bandstructure materials. In terms of computation expense, the computationally cheaper POP and IIS provide an acceptable first-order estimate of the power factor of these materials, while the non-polar contributions, which require more expensive ab initio calculations, could be of secondary importance.

cond-mat.mtrl-sci↗

arXiv2025

Thermoelectric transport and the role of different scattering processes in the half-Heusler NbFeSb

We perform an ab initio computational investigation of the electronic and thermoelectric transport properties of one of the best performance half-Heusler (HH) alloys, NbFeSb. We use Boltzmann Transport equation while taking into account the full energy/momentum/band dependence of all relevant electronic scattering rates, i.e. with acoustic phonons, non-polar optical phonons (intra- and inter-valley), polar optical phonons (POP), and ionized impurity scattering (IIS). We use a highly efficient and accurate computational approach, where the scattering rates are derived using only a few ab initio extracted matrix elements, while we account fully for intra-/inter valley/band transitions, screening from both electrons and holes, and bipolar transport effects. Our computed thermoelectric power-factor (PF) values show good agreement with experiments across densities and temperatures, while they indicate the upper limit of PF performance for this material. We show that the polar optical phonon and ionized impurity scattering (importantly including screening), influence significantly the transport properties, whereas the computationally expensive non-polar phonon scattering part (acoustic and non-polar optical) is somewhat weaker, especially for electrons, and at lower to intermediate temperatures. This insight is relevant in the study of half-Heusler and other polar thermoelectric materials in general. Although we use NbFeSb as an example, the method we employ is material agnostic and can be broadly applied efficiently for electronic and thermoelectric materials in general, with more than 10x reduction in computational cost compared to fully ab initio methods, while retaining ab-initio accuracy.

cond-mat.mtrl-sci↗

arXiv2025

Collapse of the standard ferromagnetic domain structure in hybrid Co/Molecule bilayers

We show that, upon the chemisorption of organic molecules, Co thin films display a number of unique magnetic properties, including the giant magnetic hardening and the violation of the Rayleigh law in magnetization reversal. These novel properties originate from the modification of the surface magnetic anisotropy induced by the molecule/film interaction: the {\pi}-d molecule/metal hybridization modifies the orbital population of the associated cobalt atoms and induces an additional and randomly oriented local anisotropy. Strong effects arise when the induced surface anisotropy is correlated over scales of a few molecules, and particularly when the correlation length of the random anisotropy field is comparable to the characteristic exchange length. This leads to the collapse of the standard domain structure and to the emergency of a glassy-type ferromagnetic state, defined by blurred pseudo-domains intertwined by diffuse and irregular domain walls. The magnetization reversal in such state was predicted to include topological vortex-like structures, successfully measured in this research by magnetic-force microscopy. Our work shows how the strong electronic interaction of standard components, Co thin films and readily available molecules, can generate structures with remarkable new magnetic properties, and thus opens a new avenue for the design of tailored-on-demand magnetic composites.

cond-mat.mtrl-sci↗

arXiv2025

Electrons and phonons in pentacene, insights from comparison between experiment and simulations

We have performed a comprehensive computational study of the vibrational properties and electron-phonon couplings in the three known polymorphs of pentacene. Vibrational patterns and electron-phonon interactions were calculated at several q-points of the Brillouin zone, allowing for a detailed mapping of the phonon landscape and the associated coupling mechanisms relevant to charge transport. Using a pool of post-processing tools, we analyze the different phonon dispersions. Thus, we shed light on how low-frequency phonons modulate the transport differently in the polymorphs via their distinct electron-phonon coupling (EPC) signatures in reciprocal space. In fact, we show that distinct phonons dominate in high-temperature and thin-film polymorphs with respect to the high mobility low-temperature polymorph, and that these lead to different decoherence/localization trends. We describe the microscopic origin of the mobility in bulk polymorph, demonstrating that polymorphism not only modulates the transfer integral but also the phonon pattern. For the first time we show that different EPC patterns lead to very different mobility values even in similar structures. Also, we explain how phonon confinement is responsible for the increased mobility observed in 2D phase. Finally, we address the problem of possible coexistence of multiple polymorphs within a single specimen, frequently encountered in organic crystals due to their subtle energy landscape and processing conditions. In this context, we consider the implications of polymorph intergrowth, structural defects and disorder.

cond-mat.mtrl-sci↗

arXiv2025

Materials design criteria for ultra-high thermoelectric power factors in metals

Metals have high electronic conductivities, but very low Seebeck coefficients, which traditionally make them unsuitable for thermoelectric materials. Recent studies, however, showed that metals can deliver ultra-high thermoelectric power factors (PFs) under certain conditions. In this work, we theoretically examine the electronic structure and electronic transport specifications which allow for such high PFs. Using Boltzmann transport (BTE) simulations and a multi-band electronic structure model, we show that metals with: i) high degree of transport asymmetry between their bands, ii) strong inter-band scattering, and iii) a large degree of band overlap, can provide ultra-high power factors. We show that each of these characteristics adds to the steepness of the transport distribution function of the BTE, which allows for an increase of the Seebeck coefficient to sizable values, simultaneously with an increase in the electrical conductivity. This work generalizes the concept that transport asymmetry (i.e., mixture of energy regions of high and low contributions to the electrical conductivity), through a combination of different band masses, scattering strengths, or energy filtering scenarios, etc., can indeed result in very high thermoelectric power factors, even in the absence of a material bandgap. Under certain conditions, transport asymmetry can over-compensate any performance degradation to the PF due to bipolar conduction and the naturally low Seebeck coefficients that otherwise exist in this class of materials.

cond-mat.mtrl-sci↗

arXiv2024

Machine learning unveils the materials physical properties driving thermoelectric generators efficiency: half-Heuslers case

We report the machine learning (ML)-based approach allowing thermoelectric generator (TEG) efficiency evaluation directly from 5 parameters: 2 physical properties - carriers density and energy gap, and 3 engineering parameters - external load resistance, TEG hot side temperature and leg height. Then, we propose to use genetic algorithm to optimize the proposed parameters in a way to maximize TEG efficiency. To prepare data, physical properties of n- and p-type materials were computed by coupling Density Functional Theory to Boltzmann Transport, and used for Finite Elements simulations. TEG efficiency was evaluated from a finite elements model considering design, radiative heat loss, contacts, external load resistance and different combinations of materials, resulting in 5300 different scenarios. For ML model, physical properties and engineering parameters were used as input features, skipping transport coefficients, while TEG efficiency was a target. Model was built on gradient boosting algorithm, its performance was evaluated using the coefficient of determination that reached a value of 0.98 on test dataset. Features importance analysis revealed the most crucial features for Half-Heusler-based TEG efficiency: carriers density or Fermi level, indicating the predominant role of electrical conductivity and electronic part of electrical conductivity. Features that were less important, but able to increase model performance were: energy gap, lattice thermal conductivity, charge carrier relaxation time and carriers conductivity effective mass. Features showed no impact were: density of states effective mass, heat capacity, density, relative permittivity and leg width. The proposed approach can be applied for the identification of the most important physical properties and their optimal values, the optimization of TEG design and operation conditions in a way to maximize TEG efficiency.

cond-mat.mtrl-sci↗

arXiv2024

Electron-phonon coupling and mobility modeling in organic semiconductors: method and application to tetracene polymorphs

We have developed a first-principles method to calculate the electron-phonon coupling for specific modes and q-points in the Brillouin Zone for crystalline organic semiconductors. Using the obtained coupling strengths, we propose an approach to compute the temperature-dependent mobilities of electrons and holes. This methodology is applied to both bulk and thin-film polymorphs of tetracene. To validate our treatment of the electronic structures and vibrational properties, we calculate the Raman spectra in the lattice-phonon region and compare them with experimental data. We then compare the computed mobilities with available data for single crystals, finding good agreement within the experimental range, especially when accounting for possible charged impurities. Finally, we discuss the observed differences between the polymorphs.

cond-mat.mtrl-sci↗

arXiv2023

The role of electronic bandstructure shape in improving the thermoelectric power factor of complex materials

The large variety of complex electronic structure materials and their alloys, offer highly promising directions for improvements in thermoelectric (TE) power factors (PF). Their electronic structure contains rich features, referred to as 'surface complexity', one of them being the highly anisotropic warped energy surface shapes with elongated features and threads in some cases. In this work we use Boltzmann transport simulations to quantify the influence that the shape of the electronic structure energy surfaces has on the PF. Using both analytical ellipsoidal bands, as well as realistic bands from the group of half-Heuslers, we show that band shape complexity alone can offer an advantage to the PF of ~3x in realistic cases. The presence of anisotropic scattering mechanisms such as ionized impurity or polar optical phonon scattering, however, can reduce these improvements by up to ~50%. We show that expressions based on the simple ratio of the density-of-states to the conductivity effective masses, mDOS/mC, together with the number of valleys, can capture the anisotropy shape with a moderate to high degree of correlation. For this, we use a convenient way to extract these masses by mapping the complex bandstructures of materials to parabolic electronic structures, without the need for Boltzmann transport codes. Despite the fact that the PF depends on many parameters, information about the benefits of the band shape alone, would be very useful for identifying and understanding the performance of novel thermoelectric materials.

cond-mat.mtrl-sci↗

arXiv2023

ElecTra Code: Full-Band Electronic Transport Properties of Materials

This paper introduces ElecTra, an open-source code which solves the linearized Boltzmann transport equation in the relaxation time approximation for charge carriers in a full-band electronic structure of arbitrary complexity, including their energy, momentum, and band-index dependence. ElecTra stands for 'ELECtronic TRAnsport' and computes the electronic and thermoelectric transport coefficients electrical conductivity, Seebeck coefficient, electronic thermal conductivity, and mobility, for semiconductor materials, for both unipolar and bipolar (small bandgap) materials. The code uses computed full-bands and relevant scattering parameters as inputs and considers single crystal materials in 3D and 2D. The present version of the code (v1) considers: i) elastic scattering with acoustic phonons and inelastic scattering with non-polar optical phonons in the deformation potential approximation, ii) inelastic scattering with polar phonons, iii) scattering with ionized dopants, and iv) alloy scattering. The user is given the option of intra- and inter-valley scattering considerations. The simulation output also includes relevant relaxation times and mean-free-paths. The transport quantities are computed as a function of Fermi level position, doping density, and temperature. ElecTra can interface with any DFT code which saves the electronic structure in the '.bxsf' format. In this paper ElecTra is validated against ideal electronic transport situations of known analytical solutions, existing codes employing the constant relaxation time approximation, as well as experimentally well-assessed materials such as Si, Ge, SiGe, and GaAs.

cond-mat.mtrl-sci↗

arXiv2023

Electronic transport computation in thermoelectric materials: From ab initio scattering rates to nanostructures

Over the last two decades a plethora of new thermoelectric materials, their alloys, and their nanostructures were synthesized. The ZT figure of merit, which quantifies the thermoelectric efficiency of these materials increased from values of unity to values consistently beyond two across material families. At the same time, the ability to identify and optimize such materials, has stressed the need for advanced numerical tools for computing electronic transport in materials with arbitrary bandstructure complexity, multiple scattering mechanisms, and a large degree of nanostructuring. Many computational methods have been developed, the majority of which utilize the Boltzmann transport equation (BTE) formalism, spanning from fully ab initio to empirical treatment, with varying degree of computational expense and accuracy. In this paper we describe a suitable computational process that we have recently developed specifically for thermoelectric materials. The method consists of three independent software packages that we have developed and: 1) begins from ab initio calculation of the electron-phonon scattering rates, 2) to then be used within a Boltzmann transport simulator, and 3) calculated quantities from BTE are then passed on to a Monte Carlo simulator to examine electronic transport in highly nanostructured material configurations. The method we describe is computationally significantly advantageous compared to current fully ab initio and existing Monte Carlo methods, but with a similar degree of accuracy, thus making it truly enabling in understanding and assessing thermoelectric transport in complex band, nanostructured materials.

cond-mat.mtrl-sci↗

arXiv2022

Electron and Hole Mobility of SnO2 from Full-Band Electron-Phonon and Ionized Impurity Scattering Computations

Mobility is a key parameter for SnO2, which is extensively studied as a practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V-1s-1 at room temperature. Here, we calculate the mobility as limited by electron-phonon and ionized impurity scattering by coupling the Boltzmann transport equation with density functional theory electronic structures. The linearized Boltzmann transport equation is solved numerically beyond the commonly employed constant relaxation-time approximation by taking into account all energy and momentum dependencies of the scattering rates. Acoustic deformation potential and polar optical phonons are considered for electron-phonon scattering, where polar optical phonon scattering is found to be the main factor which determines the mobility of both electrons and holes at room temperature. The calculated phonon-limited electron mobility is found to be 265 cm2V-1s-1, whereas that of holes is found to be 7.6 cm2V-1s-1. We present the mobility as a function of the carrier concentration, which shows the upper mobility limit. The large difference between the mobilities of n-type and p-type SnO2 is a result of the different effective masses between electrons and holes.

cond-mat.mtrl-sci↗

arXiv2022

Bipolar conduction asymmetries lead to ultra-high thermoelectric power factor

Low band gap thermoelectric materials suffer from bipolar effects at high temperatures, with increased electronic thermal conductivity and reduced Seebeck coefficient, leading to reduced power factor and low ZT figure of merit. In this work we show that the presence of strong transport asymmetries between the conduction and valence bands can allow high phonon-limited electronic conductivity at finite Seebeck coefficient values, leading to largely enhanced power factors. The power factors that can be achieved can be significantly larger compared to their maximum unipolar counterparts, allowing for doubling of the ZT figure of merit. We identify this behavior in low band gap cases from the half-Heusler materials family. Using both, advanced electronic Boltzmann transport calculations for realistic material bandstructures, as well as model parabolic electronic bands, we elaborate on the parameters that determine this effect. We then develop a series of descriptors which can guide machine learning studies in identifying such classes of materials with extraordinary power factors at nearly pristine conditions. For this we test more than 3000 analytical bandstructures and their features, and more than 120 possible descriptors, to identify the most promising ones that contain: i) only band structure features for easy identification from material databases, and ii) band structure and transport parameters that provide much higher correlations, but for which parameter availability can be somewhat scarce.

cond-mat.mtrl-sci↗

arXiv2021

Deformation potential extraction and computationally efficient mobility calculations in silicon from first principles

We present a first-principles framework to extract deformation potentials in Silicon based on density-functional theory (DFT) and density-functional perturbation theory (DFPT). We compute the electronic band structures, phonon dispersion relations, and electron-phonon matrix elements to extract deformation potentials for acoustic and optical phonons for all possible processes. The matrix elements clearly show the separation between intra- and inter-valley scattering in the conduction band, and quantify the strength of the scattering events in the degenerate bands of the valence band. We then use an advanced numerical Boltzmann transport equation (BTE) simulator that couples DFT electronic structures and energy/momentum-dependent scattering rates to compute the transport properties for electrons and holes. By incorporating ionized impurity scattering as well, we calculate the n-type and p-type mobility versus carrier density and make comparisons to experiments, indicating excellent agreement. The fact that the method we present uses well-established theoretical tools and requires the extraction of only a limited number of matrix elements, makes it generally computationally very attractive, especially for semiconductors with a large unit cell and lower symmetry.

cond-mat.mtrl-sci↗

arXiv2020

Hierarchically nanostructured thermoelectric materials: Challenges and opportunities for improved power factors

The field of thermoelectric materials has undergone a revolutionary transformation over the last couple of decades as a result of the ability to nanostructure and synthesize myriads of materials and their alloys. The ZT figure of merit, which quantifies the performance of a thermoelectric material has more than doubled after decades of inactivity, reaching values larger than two, consistently across materials and temperatures. Central to this ZT improvement is the drastic reduction in the material thermal conductivity due to the scattering of phonons on the numerous interfaces, boundaries, dislocations, point defects, phases, etc., which are purposely included. In these new generation of nanostructured materials, phonon scattering centers of different sizes and geometrical configurations (atomic, nano- and macro-scale) are formed, which are able to scatter phonons of mean-free-paths across the spectrum. Beyond thermal conductivity reductions, ideas are beginning to emerge on how to use similar hierarchical nanostructuring to achieve power factor improvements. Ways that relax the adverse interdependence of the electrical conductivity and Seebeck coefficient are targeted, which allows power factor improvements. For this, elegant designs are required, that utilize for instance non-uniformities in the underlying nanostructured geometry, non-uniformities in the dopant distribution, or potential barriers that form at boundaries between materials. A few recent reports, both theoretical and experimental, indicate that extremely high power factor values can be achieved, even for the same geometries that also provide ultra-low thermal conductivities. Despite the experimental complications that can arise in having the required control in nanostructure realization, in this colloquium, we aim to demonstrate, mostly theoretically, that it is a very promising path worth exploring.

cond-mat.mtrl-sci↗

arXiv2020

Material Descriptors for the Discovery of Efficient Thermoelectrics

The predictive performance screening of novel compounds can significantly promote the discovery of efficient, cheap, and non-toxic thermoelectric materials. Large efforts to implement machine-learning techniques coupled to materials databases are currently being undertaken, but the adopted computational methods can dramatically affect the outcome. With regards to electronic transport and power factor calculations, the most widely adopted and computationally efficient method, is the constant relaxation time approximation (CRT). This work goes beyond the CRT and adopts the proper, full energy and momentum dependencies of electron-phonon and ionized impurity scattering, to compute the electronic transport and perform power factor optimization for a group of half-Heusler alloys. Then the material parameters that determine the optimal power factor based on this more advanced treatment are identified. This enables the development of a set of significantly improved descriptors that can be used in materials screening studies, and which offer deeper insights into the underlying nature of high performance thermoelectric materials. We have identified $n_v$$ε_r$ / $D_o^2m_{cond}$ as the most useful and generic descriptor, a combination of the number of valleys, the dielectric constant, the conductivity effective mass, and the deformation potential for the dominant electron-phonon process. The proposed descriptors can accelerate the discovery of new efficient and environment friendly thermoelectric materials in a much more accurate and reliable manner, and some predictions for very high performance materials are presented.

physics.app-ph↗

arXiv2020

Effective masses in complex band structures, a code to extract them

A code to extract the effective masses for the density of states and the conductivity of an arbitrary band structure is presented and the meaning of these masses for the band structure transport properties is clarified. The code, named Effective A code to extract the effective masses for the density of states and the conductivity of an arbitrary band structure is presented and the meaning of these masses for the band structure transport properties is clarified. The code, named Effective Mass Finder code (EMAF), computes the effective mass parameters for a given, generic and arbitrary, three-dimensional (3D) bandstructure of semiconductors. The EMAF code is written in MATLAB and is released open source under the GNU GPL v3.0 license github and ResearchGate.

cond-mat.mtrl-sci↗

arXiv2020

Ultra-High Thermoelectric Power Factors in Narrow Gap Materials with Asymmetric Bands

We theoretically unveil the unconventional possibility to achieve extremely high thermoelectric power factors in lightly doped narrow gap semiconductors with asymmetric conduction/valence bands operated in the bipolar transport regime. Specifically, using Boltzmann transport simulations, we show that narrow bandgap materials, rather than suffering from performance degradation due to bipolar conduction, if they possess highly asymmetric conduction and valence bands in terms of either effective masses, density of states, or phonon scattering rates, then they can deliver very high power factors. We show that this is reached because, under these conditions, electronic transport becomes phonon scattering limited, rather than ionized impurity scattering limited, which allows large conductivities. We explain why this effect has not been observed so far in the known narrow-gap semiconductors, interpret some recent related experimental findings, and propose a few examples from the half-Heusler materials family for which this effect can be observed and power factors even up to 50 mW/m$K^2$ can be reached.

cond-mat.mtrl-sci↗