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Pavel B. Sorokin

Publications and source records attributed to Pavel B. Sorokin.

At least 19 recordsLinked to original sources

Unveiling the Puzzle of Brittleness in Single Crystal Iridium

Materials for extreme environments require high strength yet ductile to tolerate catastrophic damage. Face-centered cubic (FCC) metals are typically ductile under stress, but single-crystal FCC iridium exhibits intrinsically brittle, limiting its wider applications. Great efforts on theoretical studies have attributed this to non-planar dislocation cores or impurities, while direct experimental evidence has remained elusive. Here we report that high-density, sessile Frank dislocation loops with zero-net Burgers vectors are the primary cause of the brittleness, identified through atomic-resolution scanning transmission electron microscopy. Through first-principles calculations, supported by discrete dislocation dynamics simulations, we reveal that these loops form via an energetically favorable transformation from mixed perfect dislocations under stress, a process unique to iridium among other FCC metals. The immobile loops act as potent barriers, drastically increasing yield strength and work hardening by impeding dislocation glide and consuming mobile dislocations. These decisive results not only deepen the understanding of the iridium brittleness, but also describe the existence of a new embrittlement mechanism inherent to the FCC lattice and not previously described in the literature. The latter may enable novel routes for property tuning across a broad class of materials, which is of paramount importance to metallurgical technology

cond-mat.mtrl-sci↗

Engineering of a Layered Ferromagnet via Graphitization: An Overlooked Polymorph of GdAlSi

Layered magnets are stand-out materials because of their range of functional properties that can be controlled by external stimuli. Regretfully, the class of such compounds is rather narrow, prompting the search for new members. Graphitization - stabilization of layered graphitic structures in the 2D limit - is being discussed for cubic materials. We suggest the phenomenon to extend beyond cubic structures; it can be employed as a viable route to a variety of layered materials. Here, the idea of graphitization is put into practice to produce a new layered magnet, GdAlSi. The honeycomb material, based on graphene-like layers AlSi, is studied both experimentally and theoretically. Epitaxial films of GdAlSi are synthesized on silicon; the critical thickness for the stability of the layered polymorph is around 20 monolayers. Notably, the layered polymorph of GdAlSi demonstrates ferromagnetism stemming from the open 4f-shells of Gd, in contrast to the non-layered, tetragonal polymorph. The ferromagnetism is further supported by electron transport measurements revealing negative magnetoresistance and the anomalous Hall effect. The results show that graphitization can be a powerful tool in the design of functional layered materials.

cond-mat.mtrl-sci↗

Nano-thermodynamics of chemically induced graphene-diamond transformation

Nearly two-dimensional diamond, or diamane, is coveted as ultrathin $sp^3$-carbon film with unique mechanics and electro-optics. The very thinness ($~h$) makes it possible for the surface chemistry, e.g. adsorbed atoms, to shift the bulk phase thermodynamics in favor of diamond, from multilayer graphene. Thermodynamic theory coupled with atomistic first principles computations predicts not only the reduction of required pressure ($p/p_{\infty}>1-h_0/h$), but also the nucleation barriers, definitive for the kinetic feasibility of diamane formation. Moreover, the optimal adsorbent chair-pattern on a bilayer graphene results in a cubic diamond lattice, while for thicker precursors the adsorbent boat-structure tends to produce hexagonal diamond (lonsdaleite), if graphene was in AA` stacking to start with. As adsorbents, H and F are conducive to diamond formation, while Cl appears sterically hindered.

cond-mat.mtrl-sci↗

Insights into regularity of 2D 3d transition metal monocarbides formation

Recently several theoretical predictions were made about 2D planar FeC, CoC, NiC, and CuC while their bulk phases still remain unknown. Here, we present generalization of 2D family of 3d transition metal monocarbides (TMC) by searching their stable configurations with DFT methods and evolutionary algorithm. It is found that in the TMC row (TM = Sc-Cu) a tendency of 3D rocksalt phase formation is monotonously interchanging by 2D phase appearance, namely planar orthorhombic TMC characterized by carbon dimers inside metal hexagons. Among them, orthorhombic CoC and FeC monocarbides would be likely formed rather than any other 2D metal carbide phase or metal/graphene interface.

cond-mat.mtrl-sci↗

Quantum oscillation and unusual protection mechanism of the surface state in nonsymmorphic semimetals

In a topological semimetal with Dirac or Weyl points, the bulk edge correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surface. The detection of such topological surface state has been considered as the fingerprint prove for crystals with nontrivial topological bulk band. On the contrary, it has been proposed that even with symmetry broken at the surface, a new surface band can emerge in nonsymmorphic topological semimetals. The symmetry reduction at the surface lifts the bulk band degeneracies, produces an unusual floating surface band with trivial topology. Here, we report quantum transport probing to ZrSiSe thin flakes and reveal transport signatures of this new surface state. Remarkably, though topologically trivial, such a surface band exhibit substantial two dimensional Shubnikov de Haas quantum oscillations with high mobility, which signifies a new protection mechanism and may open applications for surface-related devices.

cond-mat.mtrl-sci↗

High yield production of ultrathin fibroid semiconducting nanowire of Ta$_2$Pd$_3$Se$_8$

Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with thickness approaching molecular or atomic level still remains stagnant. Here, we demonstrate the high yield production of a 1D vdW material, semiconducting Ta2Pd3Se8 nanowires, by means of liquid-phase exfoliation. The thinnest nanowire we have readily achieved is around 1 nm, corresponding to a bundle of one or two molecular ribbons. Transmission electron microscopy and transport measurements reveal the as-fabricated Ta2Pd3Se8 nanowires exhibit unexpected high crystallinity and chemical stability. Our low frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings. The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors.

physics.app-ph↗

Spontaneous doping of the basal plane of MoS2 single-layers through oxygen substitution under ambient conditions

The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural investigations reported here reveal that oxygen atoms spontaneously incorporate into the basal plane of MoS2 single layers during ambient exposure. Our scanning tunneling microscopy investigations reveal a slow oxygen substitution reaction, upon which individual sulfur atoms are one by one replaced by oxygen, giving rise to solid solution type 2D MoS2-xOx crystals. O substitution sites present all over the basal plane act as single-atomic active reaction centers, substantially increasing the catalytic activity of the entire MoS2 basal plane for the electrochemical H2 evolution reaction.

cond-mat.mes-hall↗

Effect of Ultrahigh Stiffness of Defective Graphene from Atomistic Point of View

Well-known effect of mechanical stiffness degradation under the influence of point defects in macroscopic solids can be controversially reversed in the case of low-dimensional materials. Using atomistic simulation, we showed here that a single-layered graphene film can be sufficiently stiffened by monovacancy defects at a tiny concentration. Our results correspond well with recent experimental data and suggest that the effect of mechanical stiffness augmentation is mainly originated from specific bonds distribution in the surrounded monovacancy defects regions. We showed that such unusual mechanical response is the feature of presence of specifically monovacancies, whereas other types of point defects such as divacancy, 555-777 and Stone-Wales defects, lead to the ordinary degradation of the graphene mechanical stiffness.

cond-mat.mes-hall↗

Spontaneous graphitization of ultrathin cubic structures: A computational study

Results based on {\em ab initio} density functional calculations indicate a general graphitization tendency in ultrathin slabs of cubic diamond, boron nitride, and many other cubic structures including rocksalt. Whereas such compounds often show an energy preference for cubic rather than layered atomic arrangements in the bulk, the surface energy of layered systems is commonly lower than that of their cubic counterparts. We determine the critical slab thickness for a range of systems, below which a spontaneous conversion from a cubic to a layered graphitic structure occurs, driven by surface energy reduction in surface-dominated structures.

cond-mat.mtrl-sci↗

The high hydrogen adsorption rate material based on graphane decorated with alkali metals

The graphane with chemically bonded alkali metals (Li, Na, K) was considered as potential material for hydrogen storage. The ab initio calculations show that such material can adsorb as many as 4 hydrogen molecules per Li, Na and K metal atoms. These values correspond to 12.20 wt%, 10.33 wt% and 8.56 wt% of hydrogen, respectively and exceed the DOE requirements. The thermodynamic analysis shows that Li-graphane complex is the most promising for hydrogen storage with ability to adsorb 3 hydrogen molecules per metal atom at 300 K and pressure in the range from 5 to 250 atm.

cond-mat.mes-hall↗

The impact of edges and dopants on the work function of graphene nanostructures. The way to high electronic emission from pure carbon medium

The impact of the edges and presence of dopants to the work function (WF) of graphene nanoribbons (GNR) and nanoflakes was studied by an ab initio approach. The strong dependence of the WF upon the GNR structure was found and a promising character for the field emission by the donor type impurities was observed. Basing on the predominant impact of the nanostructure edges to the emission properties, the small graphene flakes were investigated as a possible source for the electron emission. The obtained weak dependence of the low WF values of the graphene flakes on their size and shape allows to suggest that the pure carbon medium with high and uniform emission properties can be fabricated by today technology.

cond-mat.mes-hall↗

The influence of size effect on the electronic and elastic properties of diamond films with nanometer thickness

The atomic structure and physical properties of few-layered <111> oriented diamond nanocrystals (diamanes), covered by hydrogen atoms from both sides are studied using electronic band structure calculations. It was shown that energy stability linear increases upon increasing of the thickness of proposed structures. All 2D carbon films display direct dielectric band gaps with nonlinear quantum confinement response upon the thickness. Elastic properties of diamanes reveal complex dependence upon increasing of the number of <111> layers. All theoretical results were compared with available experimental data.

cond-mat.mtrl-sci↗

Patterning Nanoroads and Quantum Dots on Fluorinated Graphene

Using ab initio methods we have investigated the fluorination of graphene and find that different stoichiometric phases can be formed without a nucleation barrier, with the complete "2D-Teflon" CF phase being thermodynamically most stable. The fluorinated graphene is an insulator and turns out to be a perfect matrix-host for patterning nanoroads and quantum dots of pristine graphene. The electronic and magnetic properties of the nanoroads can be tuned by varying the edge orientation and width. The energy gaps between the highest occupied and lowest unoccupied molecular orbitals (HOMO-LUMO) of quantum dots are size-dependent and show a confinement typical of Dirac fermions. Furthermore, we study the effect of different basic coverage of F on graphene (with stoichiometries CF and C$_{4}$F) on the band gaps, and show the suitability of these materials to host quantum dots of graphene with unique electronic properties.

cond-mat.mtrl-sci↗

Diamond-Like C2H Nanolayer, Diamane: Simulation of the Structure and Properties

We consider a new C2H nanostructure based on bilayer graphene transformed under the covalent bond of hydrogen atoms adsorbed on its external surface, as well as compounds of carbon atoms located opposite each other in neighboring layers. They constitute a "film" of the <111> diamond with a thickness of less than 1 nm, which is called diamane. The energy characteristics and electron spectra of diamane, graphene, and diamond are calculated using the density functional theory and are compared with each other. The effective Young's moduli and destruction thresholds of diamane and graphene membranes are determined by the molecular dynamics method. It is shown that C2H diamane is more stable than CH graphane, its dielectric "gap" is narrower than the band gap of bulk diamond (by 0.8 eV) and graphane (by 0.3 eV), and is harder and more brittle than the latter.

cond-mat.mes-hall↗

Metallic beta-phase silicon nanowires: structure and electronic properties

Electronic band structure and energetic stability of two types of and oriented silicon nanowires in beta-Sn phase with the surface terminated by hydrogen atoms were studied using density functional theory. It was found that beta-Sn nanowires are metastable with zero band gap against to alpha-diamond nanowires. The relative energy of the studied wires tends to the energy of the bulk silicon crystal in beta-Sn phase.

cond-mat.mtrl-sci↗

Theoretical Study of Atomic Structure and Elastic Properties of Branched Silicon Nanowires

The atomic structure and elastic properties of Y-silicon nanowire junctions of fork- and bough-types were theoretically studied and effective Young modulus were calculated using the Tersoff interatomic potential. In the final stages of bending, new bonds between different parts of the Y-shaped wires are formed. It was found that the stiffness of the nanowires considered can be compared with the stiffness of carbon nanotube Y-junctions.

cond-mat.mes-hall↗

Theoretical Study of Elastic Properties of SiC nanowires of Different Shapes

The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular dynamics. The surface relaxation led to surface reconstruction with splitting of the wire geometry to hexagonal (surface) and cubic (bulk) phases. Theoretical calculations of effective Young's modulus and strain energies allowed us to explain the key experimental data of the SiC nanowires of different types.

cond-mat.mtrl-sci↗

Band gap unification of partially Si-substituted single wall carbon nanotubes

The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the LDA plane wave band structure calculations. Consecutive substitution of carbon atoms by Si leads to a gap opening in the energetic spectrum of the metallic (8,8) SWCNT with approximately quadratic dependence of the band gap upon the Si concentration. The same substitution for the semiconductor (10,0) SWCNT results in a band gap minimum (0.27 eV) at ~25% of Si concentration. In the Si concentration region of 12-18%, both types of nanotubes have less than 0.5 eV direct band gaps at the Gamma-Gamma point. The calculation of the chiral (8,2) SWSi_0.15C_0.85NT system gives a similar (0.6 eV) direct band gap. The regular distribution of Si atoms in the atomic lattice is by ~0.1 eV/atom energetically preferable in comparison with a random distribution. Time dependent DFT calculations showed that the silicon substitution sufficiently increases (roughly by one order of magnitude) the total probability of optical transitions in the near infrared region, which is caused by the opening of the direct band gap in metallic SWCNTs, the unification of the nature and energy of band gaps of all SWCNT species, the large values of radial integrals and participation of Si3d states in chemical bonding in both valence and conductance bands.

cond-mat.mtrl-sci↗