Theoretical Study of Atomic Structure and Elastic Properties of Branched Silicon Nanowires

Pavel B. Sorokin; Alexander G. Kvashnin; Dmitry G. Kvashnin; Pavel V. Avramov; Alexander S. Fedorov; Leonid A. Chernozatonskii

arXiv · 0905.2685

Theoretical Study of Atomic Structure and Elastic Properties of Branched Silicon Nanowires

Pavel B. Sorokin·Alexander G. Kvashnin·Dmitry G. Kvashnin·Pavel V. Avramov·Alexander S. Fedorov·Leonid A. Chernozatonskii

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Abstract

The atomic structure and elastic properties of Y-silicon nanowire junctions of fork- and bough-types were theoretically studied and effective Young modulus were calculated using the Tersoff interatomic potential. In the final stages of bending, new bonds between different parts of the Y-shaped wires are formed. It was found that the stiffness of the nanowires considered can be compared with the stiffness of carbon nanotube Y-junctions.

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Pavel B. Sorokin, Alexander G. Kvashnin, Dmitry G. Kvashnin, Pavel V. Avramov, Alexander S. Fedorov, Leonid A. Chernozatonskii. 2009-05-16. Theoretical Study of Atomic Structure and Elastic Properties of Branched Silicon Nanowires. https://arxiv.org/abs/0905.2685

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