arXiv subjects

Pavel V. Avramov

Publications and source records attributed to Pavel V. Avramov.

10 recordsLinked to original sources

arXiv2022

Topological and Quantum Stability of Low-Dimensional Crystalline Lattices with Multiple Nonequivalent Sublattices

The terms of topological and quantum stabilities of low-dimensional crystalline carbon lattices with multiple non-equivalent sublattices are coined using theoretical analysis, multilevel simulations, and available experimental structural data. It is demonstrated that complex low-dimensional lattices are prone to periodicity breakdown caused by structural deformations generated by PBC approach. To impose PBC limitations for low-dimensional lattices, the Topology Conservation Theorem (TCT) is formulated and proved. It is shown that the lack of perfect filling of 2D crystalline space units may cause formation of i) Structure waves; ii) Nanotubes or rolls; iii) Saddle structures; iv) Aperiodic atomic clusters; v) Stabilization of 2D lattices by aromatic resonance, correlation effects, or van-der-Waals interactions. The effect of quantum instability of infinite structural waves is studied using quasiparticle approach. It is found that both perfect finite-sized, or stabilized structural waves can exist and can be synthesized. It is shown that for low-dimensional lattices prone to breakdown of translation invariance (TI), complete active space of normal coordinates cannot be reduced to a subspace of TI normal coordinates. As a result, constrained TI subspace structural minimization may artificially return a regular point at the potential energy surface as either a global/local minimum/maximum. It is proved that phonon dispersion cannot be used as solid and final proof of their stability. It is shown that ab initio molecular dynamics (MD) PBC Nosé-Hoover thermostat algorithm constrains the linear dimensions of the periodic slabs in MD box preventing their thermostated equilibration. Based on rigorous TCT analysis, a flowchart algorithm for structural analysis of low-dimensional crystals is proposed and proved to be a powerful tool for theoretical design of advanced complex nanomaterials.

cond-mat.mes-hall↗

arXiv2013

The high hydrogen adsorption rate material based on graphane decorated with alkali metals

The graphane with chemically bonded alkali metals (Li, Na, K) was considered as potential material for hydrogen storage. The ab initio calculations show that such material can adsorb as many as 4 hydrogen molecules per Li, Na and K metal atoms. These values correspond to 12.20 wt%, 10.33 wt% and 8.56 wt% of hydrogen, respectively and exceed the DOE requirements. The thermodynamic analysis shows that Li-graphane complex is the most promising for hydrogen storage with ability to adsorb 3 hydrogen molecules per metal atom at 300 K and pressure in the range from 5 to 250 atm.

cond-mat.mes-hall↗

arXiv2011

The influence of size effect on the electronic and elastic properties of diamond films with nanometer thickness

The atomic structure and physical properties of few-layered <111> oriented diamond nanocrystals (diamanes), covered by hydrogen atoms from both sides are studied using electronic band structure calculations. It was shown that energy stability linear increases upon increasing of the thickness of proposed structures. All 2D carbon films display direct dielectric band gaps with nonlinear quantum confinement response upon the thickness. Elastic properties of diamanes reveal complex dependence upon increasing of the number of <111> layers. All theoretical results were compared with available experimental data.

cond-mat.mtrl-sci↗

arXiv2009

Metallic beta-phase silicon nanowires: structure and electronic properties

Electronic band structure and energetic stability of two types of and oriented silicon nanowires in beta-Sn phase with the surface terminated by hydrogen atoms were studied using density functional theory. It was found that beta-Sn nanowires are metastable with zero band gap against to alpha-diamond nanowires. The relative energy of the studied wires tends to the energy of the bulk silicon crystal in beta-Sn phase.

cond-mat.mtrl-sci↗

arXiv2009

Theoretical Study of Atomic Structure and Elastic Properties of Branched Silicon Nanowires

The atomic structure and elastic properties of Y-silicon nanowire junctions of fork- and bough-types were theoretically studied and effective Young modulus were calculated using the Tersoff interatomic potential. In the final stages of bending, new bonds between different parts of the Y-shaped wires are formed. It was found that the stiffness of the nanowires considered can be compared with the stiffness of carbon nanotube Y-junctions.

cond-mat.mes-hall↗

arXiv2009

Theoretical Study of Elastic Properties of SiC nanowires of Different Shapes

The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular dynamics. The surface relaxation led to surface reconstruction with splitting of the wire geometry to hexagonal (surface) and cubic (bulk) phases. Theoretical calculations of effective Young's modulus and strain energies allowed us to explain the key experimental data of the SiC nanowires of different types.

cond-mat.mtrl-sci↗

arXiv2007

Band gap unification of partially Si-substituted single wall carbon nanotubes

The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the LDA plane wave band structure calculations. Consecutive substitution of carbon atoms by Si leads to a gap opening in the energetic spectrum of the metallic (8,8) SWCNT with approximately quadratic dependence of the band gap upon the Si concentration. The same substitution for the semiconductor (10,0) SWCNT results in a band gap minimum (0.27 eV) at ~25% of Si concentration. In the Si concentration region of 12-18%, both types of nanotubes have less than 0.5 eV direct band gaps at the Gamma-Gamma point. The calculation of the chiral (8,2) SWSi_0.15C_0.85NT system gives a similar (0.6 eV) direct band gap. The regular distribution of Si atoms in the atomic lattice is by ~0.1 eV/atom energetically preferable in comparison with a random distribution. Time dependent DFT calculations showed that the silicon substitution sufficiently increases (roughly by one order of magnitude) the total probability of optical transitions in the near infrared region, which is caused by the opening of the direct band gap in metallic SWCNTs, the unification of the nature and energy of band gaps of all SWCNT species, the large values of radial integrals and participation of Si3d states in chemical bonding in both valence and conductance bands.

cond-mat.mtrl-sci↗

arXiv2007

The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires

The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in cluster and PBC approaches using B3LYP/6-31G* and PW PP LDA approximations. The total density of states (TDOS) of the smallest quasispherical silicon quantum dot (Si85) corresponds well to the TDOS of the bulk silicon. The elongated silicon nanodots and 1D nanowires demonstrate the metallic nature of the electronic structure. The surface oxidized layer opens the bandgap in the TDOS of the Si/SiO2 species. The top of the valence band and the bottom of conductivity band of the particles are formed by the silicon core derived states. The energy width of the bandgap is determined by the length of the Si/SiO2 clusters and demonstrates inverse dependence upon the size of the nanostructures. The theoretical data describes the size confinement effect in photoluminescence spectra of the silica embedded nanocrystalline silicon with high accuracy.

cond-mat.mtrl-sci↗

arXiv2007

New symmetric families of silicon quantum dots and their conglomerates as a tunable source of photoluminescence in nanodevices

We propose a new variety of silicon quantum dots containing fullerene-derived hollows of nearly arbitrary symmetry. Conglomerate structures are designed by connecting the quantum dots through two kinds of junctions. The quantum confinement effect is investigated using semiempirical quantum-mechanical method. It is shown that within each family of quantum dots, the band gap and the stability are inversely proportional to the particle effective size. Quantum dots inherit a wide variety of structural and symmetry properties from their parent fullerenes. The conglomerates confine electrons like quasi-molecules with a peculiar electronic structure related to the junctions. Quantum dots and their conglomerates can host guest atoms in their hollows and therefore present a new promising type of tunable photoluminescent nanomaterials.

cond-mat.mtrl-sci↗

arXiv2007

Multiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties

Using empirical scheme, atomic structure of a new exotic class of silicon nanoclusters was elaborated upon the central icosahedral core (Si-IC) and pentagonal petals (Si-PP) growing from Si-IC vertexes. It was shown that Si-IC/Si-PP interface formation is energetically preferable. Some experimental observations of silicon nanostructures can be explained by presence of the proposed objects. The Extended Huckel Theory electronic structure calculations demonstrate an ability of the proposed objects to act as nanoscale tunnel junctions.

cond-mat.mtrl-sci↗