Searcharxiv⌕ Search

arXiv subjects

Peihong Zhang

Publications and source records attributed to Peihong Zhang.

33 records · Page 2Linked to original sources

Combined sub-sampling and analytical integration for efficient large-scale $GW$ calculations for 2D systems

Accurate and efficient predictions of the quasiparticle properties of complex materials remain a major challenge due to the convergence issue and the unfavorable scaling of the computational cost with respect to the system size. Quasiparticle $GW$ calculations for two dimensional (2D) materials are especially difficult. The unusual analytical behaviors of the dielectric screening and the electron self-energy of 2D materials make the conventional Brillouin zone (BZ) integration approach rather inefficient and require an extremely dense $k$-grid to properly converge the calculated quasiparticle energies. In this work, we present a combined non-uniform sub-sampling and analytical integration method that can drastically improve the efficiency of the BZ integration in 2D $GW$ calculations. Our work is distinguished from previous work in that, instead of focusing on the intricate dielectric matrix or the screened Coulomb interaction matrix, we exploit the analytical behavior of various terms of the convolved self-energy $Σ(\mathbf{q})$ in the small $\mathbf{q}$ limit. This method, when combined with another accelerated $GW$ method that we developed recently, can drastically speed-up (by over three orders of magnitude) $GW$ calculations for 2D materials. Our method allows fully converged $GW$ calculations for complex 2D systems at a fraction of computational cost, facilitating future high throughput screening of the quasiparticle properties of 2D semiconductors for various applications. To demonstrate the capability and performance of our new method, we have carried out fully converged $GW$ calculations for monolayer C$_2$N, a recently discovered 2D material with a large unit cell, and investigate its quasiparticle band structure in detail.

cond-mat.mtrl-sci↗

Remarkable band gap renormalization via dimensionality of the layered material C3B

Layer-dependent electronic and structural properties of emerging graphitic carbon boron compound C3B are investigated using both density functional theory and the GW approximation. We discover that, in contrast to a moderate quasiparticle band gap of 2.55 eV for monolayer C3B, the calculated quasiparticle band gap of perfectly stacked bulk phase C3B is as small as 0.17 eV. Therefore, our results suggest that layered material C3B exhibits a remarkably large band gap renormalization of over 2.3 eV due to the interlayer coupling and screening effects, providing a single material with an extraordinary band gap tunability. The quasiparticle band gap of monolayer C3B is also over 1.0 eV larger than that of C3N, a closely related two-dimensional semiconductor. Detailed inspections of the near-edge electronic states reveal that the conduction and valence band edges of C3B are formed by out-of-plane and in-plane electronic states, respectively, suggesting an interesting possibility of tuning the band edges of such layered material separately by modulating the in-plane and out-of-plane interactions.

cond-mat.mtrl-sci↗

Thermoelectric probe of defect state induced by ionic liquid gating in vanadium dioxide

Thermoelectric measurements detect the asymmetry between the density of states above and below the chemical potential in a material. It provides insights into small variations in the density of states near the chemical potential, complementing electron transport measurements. Here, combined resistance and thermoelectric power measurements are performed on vanadium dioxide (VO2), a prototypical correlated electron material, under ionic-liquid (IL) gating. With IL gating, charge transport below the metal-to-insulator-transition (MIT) temperature remains in the thermally activated regime, while the Seebeck coefficient exhibits an apparent transition from semiconducting to metallic behavior. The contrasting behavior indicates changes in electronic structure upon IL gating, due to the formation of oxygen defect states. The experimental results are corroborated by numerical simulations based on a model density of states incorporating a gating induced defect band. This study reveals thermoelectric measurements to be a convenient and sensitive probe for the role of defect states induced by IL gating in suppressing the MIT in VO2, which remains benign in charge transport measurements, and possibly for studying defect sates in other materials.

cond-mat.mtrl-sci↗

Observation of a Room Temperature Two-dimensional Ferroelectric Metal

Materials with reduced dimensions have been shown to host a wide variety of exotic properties and novel quantum states that often defy textbook wisdom1-5. Ferroelectric polarization and metallicity are well-known examples of mutually exclusive properties that cannot coexist in bulk solids because the net electric field in a metal can be fully screened by free electrons6. An atomically thin metallic layer capped by insulating layers has shown decent conductivity at room temperature7. Moreover, a penetrating polarization field can be employed to induce an ion displacement and create an intrinsic polarization in the metallic layer. Here we demonstrate that a ferroelectric metal can be artificially synthesized through imposing a strong polarization field in the form of ferroelectric/unit-cell-thin metal superlattices. In this way the symmetry of an atomically thin conductive layer can be broken and manipulated by a neighboring polar field, thereby forming a two-dimensional (2D) ferroelectric metal. The fabricated of (SrRuO3)1/(BaTiO3)10 superlattices exhibit ferroelectric polarization in an atomically thin layer with metallic conductivity at room temperature. A multipronged investigation combining structural analyses, electrical measurements, and first-principles electronic structure calculations unravels the coexistence of 2D electrical conductivity in the SrRuO3 monolayer accompanied by the electric polarization. Such 2D ferroelectric metal paves a novel way to engineer a quantum multi-state with unusual coexisting properties, such as ferroelectrics, ferromagnetics and metals, manipulated by external fields8,9.

cond-mat.mtrl-sci↗

Towards Fully Converged GW Calculations for Large Systems

Although the GW approximation is recognized as one of the most accurate theories for predicting materials excited states properties, scaling up conventional GW calculations for large systems remains a major challenge. We present a powerful and simple-to-implement method that can drastically accelerate fully converged GW calculations for large systems. We demonstrate the performance of this new method by calculating the quasiparticle band gap of MgO supercells. A speed-up factor of nearly two orders of magnitude is achieved for a system contaning 256 atoms (1024 velence electrons) with a negligibly small numerical error of $\pm 0.03$ eV.

physics.comp-ph↗

False Prediction of Fundamental Properties of Metals by Hybrid Functionals

The repercussions of an inaccurate account of electronic states near the Fermi level EF by hybrid functionals in predicting several important metallic properties are investigated. The diffculties in- clude a vanishing or severely suppressed density of states (DOS) at EF, significantly widened valence bandwidth, greatly enhanced electron-phonon (el-ph) deformation potentials, and an overestimate of magnetic moment in transition metals. The erroneously enhanced el-ph coupling calculated by hybrid functionals may lead to a false prediction of lattice instability. The main culprit of the problem comes from the simplistic treatment of the exchange functional rooted in the original Fock exchange energy. The use of a short-ranged Coulomb interaction alleviates some of the drawbacks but the fundamental issues remain unchanged.

cond-mat.mtrl-sci↗

Hole-lattice Coupling and Photo-induced Insulator-Metal Transition in VO$_2$

Photo-induced insulator-metal transition in VO$_2$ and the related transient and multi-timescale structural dynamics upon photoexcitation are explained within a unified framework. Holes created by photoexcitation weaken the V-V bonds and eventually break V-V dimers in the M$_1$ phase of VO$_2$ when the laser fluence reaches a critical value. The breaking of the V-V bonds in turn leads to an immediate electronic phase transition from an insulating to a metallic state while the crystal lattice remains monoclinic in shape. The coupling between excited electrons and the 6.0 THz phonon mode is found to be responsible for the observed zig-zag motion of V atoms upon photoexcitation and is consistent with coherent phonon experiments.

cond-mat.mtrl-sci↗

Carrier-Dopant Exchange Interactions in Mn-doped PbS Colloidal Quantum Dots

Carrier-dopant exchange interactions in Mn-doped PbS colloidal quantum dots were studied by circularly polarized magneto-photoluminescence. Mn substitutional doping leads to paramagnetic behavior down to 5 K. While undoped quantum dots show negative circular polarization, Mn doping changes its sign to positive. A circular polarization value of 40% was achieved at T=7 K and B=7 tesla. The results are interpreted in terms of Zeeman splitting of the band edge states in the presence of carrier-dopant exchange interactions that are qualitatively different from the s,p-d exchange interactions in II-VI systems.

cond-mat.mes-hall↗

Comparative Study of Structural and Electronic Properties of Cu-based Multinary Semiconductors

We present a systematic and comparative study of the structural and electronic properties of Cu-based ternary and quaternary semiconductors using first-principles electronic structure approaches. The important role that Cu d electrons play in determining their properties is illustrated by comparing results calculated with different exchange correlation energy functionals. We show that systematic improvement of the calculated anion displacement can be achieved by using the Heyd-Scuseria-Ernzerhof (HSE06) functional compared with the Perdew-Burke-Ernzerhof (PBE) functional. Quasiparticle band structures are then calculated within the G0W0 approximation using the crystal structures optimized within the HSE06 functional and starting from the PBE+U mean-field solution. Both the calculated quasiparticle band gaps and their systematic variation with chemical constituents agree very well with experiments. We also predict that the quasiparticle band gaps of the prototypical semiconductor Cu2ZnSnS4 in the kesterite (KS) phase is 1.65 eV and that of the stannite (ST) phase is 1.40 eV. These results are also consistent with available experimental values which vary from 1.45 to 1.6 eV.

cond-mat.mtrl-sci↗

Prediction Of A Multi-Center Bonded Solid Boron Hydride for Hydrogen Storage

An ideal material for on-board hydrogen storage must release hydrogen at practical temperature and pressure and also regenerate efficiently under similarly gentle conditions. Therefore, thermodynamically, the hydride material must lie within a narrow range near the hydrogenation/dehydrogenation phase boundary. Materials involving only conventional bonding mechanisms are unlikely to meet these requirements. In contrast, materials containing certain frustrated bonding are designed to be on the verge of frustration-induced phase transition, and they may be better suited for hydrogen storage. Here we propose a novel layered solid boron hydride and show its potential for hydrogen storage. The absence of soft phonon modes confirms the dynamical stability of the structure. Charging the structure significantly softens hydrogen-related phonon modes. Boron-related phonons, in contrast, are either hardened or not significantly affected by electron doping. These results suggest that electrochemical charging may facilitate hydrogen release while the underlying boron network remains intact for subsequent rehydrogenation.

cond-mat.mtrl-sci↗

First-principles theory of coloration of WO$_3$ upon charge insertion

We report first-principles investigations of the coloration of WO$_3$ upon charge insertion, using sodium tungsten bronze (Na$_x$WO$_3$) as a model system. Our results explain well the systematic color change of Na$_x$WO$_3$ from dark blue to violet, red-orange, and finally to golden-yellow as sodium concentration $x$ increases from 0.3 to unity. Proper accounts for both the interband and the intraband contributions to the optical response are found to be very important for a detailed understanding of the coloration mechanism in this system.

cond-mat.mtrl-sci↗

Hole doping MgB$_2$ without chemical substitution

Structures for realizing hole-doped MgB$_2$ without appealing to chemical substitutions are proposed. These structures which consist of alternating MgB$_2$ and graphene layers have small excess energy compared to bulk graphite and MgB$_2$. Density functional theory based first-principles electronic structure calculations show significant charge transfer from the MgB$_2$ layer to graphene, resulting in effectively hole-doped MgB$_2$. Substantial enhancement in the density of states at the Fermi level of the proposed structure is predicted.

cond-mat.supr-con↗

Theory of Sodium Ordering in NaxCoO2

The ordering of Na ions in Na$_x$CoO$_2$ is investigated systematically by combining detailed density functional theory (DFT) studies with model calculations. Various ground state ordering patterns are identified, and they are in excellent agreement with avaliable experimental results. Our results suggest that the primary driving force for the Na ordering is the screened Coulomb interaction among Na ions. Possible effects of the Na ordering on the electronic structure of the CoO$_2$ layer are discussed. We propose that the nonexistence of a charge ordered insulating state at $x = 2/3$ is due to the lack of a commensurate Na ordering pattern, whereas an extremely stable Na ordering at $x = 0.5$ enhances the charge ordering tendency, resulting in an insulating state as observed experimentally.

cond-mat.mtrl-sci↗

The Fermi surface of Na$_{x}$CoO$_2$

Doping evolution of the Fermi surface topology of Na$_x$CoO$_2$ is studied systematically. Both local density approximation (LDA) and local spin density approximation (LSDA) predict a large Fermi surface as well as small hole pockets for doping levels $x\sim$ 0.5. In contrast, the hole pockets are completely absent for all doping levels within LSDA+U. More importantly, we find no violation of Luttinger's rule in this system, contrary to a recent suggestion. The measured Fermi surface of Na$_{0.7}$CoO$_2$ can be explained by its half-metallic behavior and agrees with our LSDA+U calculations.

cond-mat.str-el↗

Doping effects on the electronic and structural properties of CoO2: An LSDA+U study

A systematic LSDA+U study of doping effects on the electronic and structural properties of single layer CoO2 is presented. Undoped CoO2 is a charge transfer insulator within LSDA+U and a metal with a high density of states (DOS) at the Fermi level within LSDA. (CoO2)$^{1.0-}$, on the other hand, is a band insulator with a gap of 2.2 eV. Systems with fractional doping are metals if no charge orderings are present. Due to the strong interaction between the doped electron and other correlated Co d electrons, the calculated electronic structure of (CoO2)$^{x-}$ depends sensitively on the doping level x. Zone center optical phonon energies are calculated under the frozen phonon approximation and are in good agreement with measured values. Softening of the $E_g$ phonon at doping x ~0.25 seems to indicate a strong electron-phonon coupling in this system. Possible intemediate spin states of Co ions, Na ordering, as well as magnetic and charge orderings in this system are also discussed.

cond-mat.supr-con↗