arXiv subjects

Peter Krogstrup

Publications and source records attributed to Peter Krogstrup.

At least 19 recordsLinked to original sources

arXiv2026

A Platform-aware Compilation Framework for Fault-tolerant Quantum Computation

The compilation of an algorithm can vary significantly with the choice of physical hardware platform and error correction model. Yet, current compilation frameworks typically commit to a single architecture-hardware configuration, making it difficult to assess resource estimates across platforms. We present a platform-aware compilation framework that re-compiles a quantum circuit into a hardware-compatible instruction set as well as fault-tolerant operations and provides end-to-end resource estimates in terms of physical-qubit count, time-to-solution, and classical processing time. We benchmark the framework by obtaining end-to-end resource estimates for different compilers, each tailored to the functionalities of specific hardware modalities: connectivity, clock speed, and noise model. As part of this framework, we introduce a transversal active volume (t-AV) compilation architecture designed for the efficient execution of fault-tolerant operations in platforms supporting long-range logical connectivity. We benchmark the framework for Hamiltonian simulation of the 2D Fermi Hubbard model as well as for eigenenergy estimation of a small molecule (trimethylenemethane) as a candidate for early fault-tolerant demonstration of quantum chemistry. For the latter, we show that end-to-end quantum simulations can be achieved with $\sim10^4$ physical qubits and runtimes ranging from $10^2$ ms (photonics, superconducting) to $10^5$ ms (neutral atoms).

quant-ph↗

arXiv2026

Epitaxial single T centres in silicon-on-insulator

Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a primary challenge due to stringent material quality requirements. To overcome this, we utilise high-purity molecular-beam epitaxy (MBE) to epitaxially incorporate single T centres in silicon-on-insulator (SOI) wafers. We demonstrate single T-centre emission coupled to a nanophotonic waveguide and observe significant suppression of homogeneous broadening, yielding optical linewidths as narrow as 30 MHz using natural silicon for crystal growth. These results establish epitaxial T centres as a robust foundation for coherent spin-photon interfaces in silicon quantum photonics.

quant-ph↗

arXiv2026

Magnetic texture modulated superconductivity in superconductor/ferromagnet shells of semiconductor nanowires

In a one-dimensional ferromagnet-superconductor nanowire, magnetism can suppress superconductivity except where the Zeeman field is suppressed, for example domain wall superconductivity (DWS) near magnetic domain walls or multi-domain-averaged superconductivity (MDAS) in multi-domain states where the net magnetization over the coherence length averages to nearly zero. Here we study full-shell InAs/EuS/Al nanowires using scanning SQUID magnetometry and transport, and find superconductivity in the Al shell only when the EuS is in a multi-domain state, consistent with both DWS and MDAS, and absent in the saturated single-domain state. Scanning SQUID magnetometry further shows that the EuS magnetic texture is position dependent and reconfigurable by small changes in external magnetic field, including moving a well-defined domain wall at $\approx$5.5 $\mu$m/mT with sub-mT fields, implying that any associated localized superconducting region would likewise be movable. Such magnetic texture controlled superconductivity along a nanowire may be useful for topological qubits, Andreev spin qubits, superconducting logic, and memory devices.

cond-mat.mes-hall↗

arXiv2025

Phase controlled multi-terminal Josephson junction in ternary hybrid nanowire

This work presents multiterminal Josephson junctions in hybrid semiconductor-superconductor InAsSb-Al nanocrosses. Hybrid nanocrosses are grown using molecular beam epitaxy and are formed through As-assisted merging of oppositely directed InAsSb nanowires. We explain this complex ternary merging mechanism using a temperature-dependent phase diagram and investigate the detailed crystal structure with atomic-resolution imaging. The hybrid nanoscrosses enabled the fabrication of multiterminal Josephson junction devices, which were characterized at low temperatures. The supercurrent through each terminal combination was measured as a function of the density in the junction and the relative phase of the terminals, which was controlled by an external magnetic field.

cond-mat.mtrl-sci↗

arXiv2025

Tailoring Superconductivity with Two-Level Systems

We investigate the impact of two-level systems (TLSs) on superconductivity, treating them as soft modes localised in real space. We show that these defects can either enhance or suppress the superconducting critical temperature, depending on their surface density and average frequency. Using thin-film aluminium as a case study, we quantitatively describe how TLSs modify both the critical temperature and the zero-temperature superconducting gap. Our results thus highlight new opportunities for tailoring material properties through TLS engineering.

cond-mat.supr-con↗

arXiv2025

Many-body effects of two-level systems in superconducting qubits

Superconducting qubits are often adversely affected by two-level systems (TLSs) within the Josephson junction, which contribute to decoherence and subsequently limit the performance of the qubit. By treating the TLS as a soft (i.e., low-frequency) bosonic mode localized in real space, we find that a single TLS in either the amorphous oxide surface or the superconducting bulk may result in a localized "hot spot" of amplified Josephson energy. Such amplification is shown to have a non-negligible effect on the $T_1$ time of certain superconducting qubits, regardless of whether or not the TLS is on resonance with the qubit frequency. With this study, we identify sources of decoherence unique to the superconducting element of superconducting quantum devices.

cond-mat.supr-con↗

arXiv2025

Identification of soft modes in amorphous Al$_{2}$O$_{3}$ via first-principles

Amorphous Al$_{2}$O$_{3}$ is a fundamental component of modern superconducting qubits. While amphorphous oxides offer distinct advantages, such as directional isotropy and a consistent bulk electronic gap, in realistic systems these compounds support two-level systems (TLSs) which couple to the qubit, expediting decoherence. In this work, we perform a first-principles study of amorphous Al$_{2}$O$_{3}$ and identify low-energy modes in the electronic and phonon spectra as a possible origin for TLSs.

cond-mat.mes-hall↗

arXiv2024

Artificial Intelligence-Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

(Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of devices due to its time-intensive nature. To address this, we introduce an analytical workflow for the holistic characterization, modelling, and simulation of device heterostructures. This workflow automates the experimental (S)TEM data analysis, providing an in-depth characterization of crystallographic information, 3D orientation, elemental composition, and strain distribution. It reduces a process that typically takes days for a trained human into an automatic routine solved in minutes. Utilizing a physics-guided artificial intelligence model, it generates representative descriptions of materials and samples. The workflow culminates in creating digital twins, 3D finite element and atomic models of millions of atoms, enabling simulations that provide crucial insights into device behaviour in practical applications. Demonstrated with SiGe planar heterostructures for scalable spin qubits, the workflow links digital twins to theoretical properties, revealing how atomic structure impacts materials and functional properties such as spatially-resolved phononic or electronic characteristics, or (inverse) spin orbit lengths. The versatility of our workflow is demonstrated through its application to a wide array of materials systems, device configurations, and sample morphologies.

cond-mat.mtrl-sci↗

arXiv2024

Subgap transport in superconductor--semiconductor hybrid islands: Weak and strong coupling regimes

Superconductor--semiconductor hybrid systems play a crucial role in realizing nanoscale quantum devices, including hybrid qubits, Majorana bound states, and Kitaev chains. For such hybrid devices, subgap states play a prominent role in their operation. In this work, we study such subgap states via Coulomb and tunneling spectroscopy through a superconducting island defined in a semiconductor nanowire fully coated by a superconductor. We systematically explore regimes ranging from an almost decoupled island to the open configuration. In the weak coupling regime, the experimental observations are very similar in the absence of a magnetic field and when one flux quantum is piercing the superconducting shell. Conversely, in the strong coupling regime, significant distinctions emerge between the two cases. We ascribe this different behavior to the existence of subgap states at one flux quantum, which become observable only for sufficiently strong coupling to the leads. We support our interpretation using a simple model to describe transport through the island. Our study highlights the importance of studying a broad range of tunnel couplings for understanding the rich physics of hybrid devices.

cond-mat.mes-hall↗

arXiv2023

Gate-tunable Superconductivity in Hybrid InSb-Pb Nanowires

We present a report on hybrid InSb-Pb nanowires that combine high spin-orbit coupling with a high critical field and a large superconducting gap. Material characterization indicates the Pb layer of high crystal quality on the nanowire side facets. Hard induced superconducting gaps and gate-tunable supercurrent are observed in the hybrid nanowires. These results showcase the promising potential of this material combination for a diverse range of applications in hybrid quantum transport devices.

cond-mat.mes-hall↗

arXiv2022

Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires

Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here, we present an extensive optimization of Sn growth on InSb, InAsSb and InAs nanowires. We demonstrate how the growth conditions and the crystal structure/symmetry of the semiconductor drive the formation of either semi-metallic $\mathrm{\alpha-Sn}$ or superconducting $\mathrm{\beta-Sn}$. For InAs nanowires, we obtain phase-pure, superconducting $\mathrm{\beta-Sn}$ shells. However, for InSb and InAsSb nanowires, an initial epitaxial $\mathrm{\alpha-Sn}$ phase evolves into a polycrystalline shell of coexisting $\mathrm{\alpha}$ and $\mathrm{\beta}$ phases, where the $\beta/\alpha$ volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the $\mathrm{\beta-Sn}$ content. Therefore, this work provides key insights into Sn phase control on a variety of semiconductors, with consequences for the yield of superconducting hybrids suitable for generating topological systems.

cond-mat.mtrl-sci↗

arXiv2022

InAs/MoRe hybrid semiconductor/superconductor nanowire devices

Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact to molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures ~10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to ~10 K, and MoRe based Josephson devices exhibit supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature, and observe gap softening at finite magnetic field. These may be common features for hybrids based on large gap, type-II superconductors. The results encourage further development of MoRe-based hybrids.

cond-mat.mes-hall↗

arXiv2022

Threefold enhancement of superconductivity and the role of field-induced odd-frequency pairing in epitaxial aluminum films near the 2D limit

BCS theory has been widely successful at describing elemental bulk superconductors. Yet, as the length scales of such superconductors approach the atomic limit, dimensionality as well as the environment of the superconductor can lead to drastically different and unpredictable superconducting behavior. Here, we report a threefold enhancement of the superconducting critical temperature and gap size in ultrathin epitaxial Al films on Si(111), when approaching the 2D limit, based on high-resolution scanning tunneling microscopy/spectroscopy (STM/STS) measurements. In magnetic field, the Al films show type II behavior and the Meservey-Tedrow-Fulde (MTF) effect for in-plane magnetic fields. Using spatially resolved spectroscopy, we characterize the vortex structure in the MTF regime and find strong deviations from the typical Abrikosov vortex. We corroborate these findings with calculations that unveil the role of odd-frequency pairing and a paramagnetic Meissner effect. These results illustrate two striking influences of reduced dimensionality on a BCS superconductor and present a new platform to study BCS superconductivity in large magnetic fields.

cond-mat.supr-con↗

arXiv2022

Quantum capacitance of a superconducting subgap state in an electrostatically floating dot-island

We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting transport measurements, but providing access to states that would otherwise be highly excited and unstable. Radio-frequency reflectometry with lumped-element resonators couples capacitatively to the quantum dot, and detects the presence of discrete subgap states. We perform a detailed study of the case with no island states, but with quantum-dot-induced subgap states controlled by the tunnel coupling. When the gap to the quasi-continuum of the excited states is small, the capacitance loading the resonator is strongly suppressed by thermal excitations, an effect we dub "thermal screening". The resonance frequency shift and changes in the quality factor at charge transitions can be accounted for using a single-level Anderson impurity model. The established measurement method, as well as the analysis and simulation framework, are applicable to more complex hybrid devices such as Andreev molecules or Kitaev chains.

cond-mat.mes-hall↗

arXiv2022

Few-mode to mesoscopic junctions in gatemon qubits

We investigate a semiconductor nanowire-based gatemon qubit with epitaxial Al on two facets of the nanowire, allowing gate control of wire density. Two segments have the Al removed, one forming a Josephson junction and the other operating as a transistor, providing in-situ switching between dc transport and qubit operation. Gating the NW changes the bulk wire potential distribution, while gating the Josephson junction changes the number of junction modes. Both effects are revealed by the dependence of qubit frequency on parallel magnetic field. A detailed model of the wire and junction yields behavior consistent with experiment. In the multi-mode regime, fluctuations in qubit frequency are considerably smaller than the theoretical "universal" value, also smaller than numerics, and consistent with previous measurements of fluctuating critical current.

cond-mat.mes-hall↗

arXiv2022

Mitigation of quasiparticle loss in superconducting qubits by phonon scattering

Quantum error correction will be an essential ingredient in realizing fault-tolerant quantum computing. However, most correction schemes rely on the assumption that errors are sufficiently uncorrelated in space and time. In superconducting qubits this assumption is drastically violated in the presence of ionizing radiation, which creates bursts of high energy phonons in the substrate. These phonons can break Cooper-pairs in the superconductor and, thus, create quasiparticles over large areas, consequently reducing qubit coherence across the quantum device in a correlated fashion. A potential mitigation technique is to place large volumes of normal or superconducting metal on the device, capable of reducing the phonon energy to below the superconducting gap of the qubits. To investigate the effectiveness of this method we fabricate a quantum device with four nominally identical nanowire-based transmon qubits. On the device, half of the niobium-titanium-nitride ground plane is replaced with aluminum (Al), which has a significantly lower superconducting gap. We deterministically inject high energy phonons into the substrate by voltage biasing a galvanically isolated Josephson junction. In the presence of the low gap material, we find a factor of 2-5 less degradation in the injection-dependent qubit lifetimes, and observe that undesired excited qubit state population is mitigated by a similar factor. We furthermore turn the Al normal with a magnetic field, finding no change in the phonon-protection. This suggests that the efficacy of the protection in our device is not limited by the size of the superconducting gap in the Al ground plane. Our results provide a promising foundation for protecting superconducting qubit processors against correlated errors from ionizing radiation.

quant-ph↗

arXiv2022

Scale-dependent optimized homoepitaxy of InAs(111)A

We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale impurities and the larger-scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and indium flux while increasing the As$_2$ flux, we find two differing MBE growth parameter regions for optimized surface roughness on the macro and atomic scale. In particular, we show that a pure step-flow regime with strong suppression of hillock formation can be achieved, even on substrates without intentional offcut. On the other hand, an indium adatom deficient, low atomic defect surface can be observed for a high hillock density. We identify the main remaining point defect on the latter surface by comparison to STM simulations. Furthermore, we provide a method for extracting root-mean-square surface roughness values and discuss their use for surface quality optimization by comparison to scale-dependent, technologically relevant surface metrics. Finally, mapping the separately optimized regions of the growth parameter space should provide a guide for future device engineering involving epitaxial InAs(111)A growth.

cond-mat.mtrl-sci↗

arXiv2022

Photon assisted tunneling of high order multiple Andreev reflections in epitaxial nanowire Josephson junctions

Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, $n$, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge $ne$ transferred by the $n^\mathrm{th}$ order tunnel process. The measurements suggest PAT as a powerful method for assigning the origin of low energy spectral features in hybrid Josephson devices.

cond-mat.mes-hall↗