arXiv subjects

Peter Krogstrup

Publications and source records attributed to Peter Krogstrup.

At least 37 records · Page 2Linked to original sources

arXiv2022

Scale-dependent optimized homoepitaxy of InAs(111)A

We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale impurities and the larger-scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and indium flux while increasing the As$_2$ flux, we find two differing MBE growth parameter regions for optimized surface roughness on the macro and atomic scale. In particular, we show that a pure step-flow regime with strong suppression of hillock formation can be achieved, even on substrates without intentional offcut. On the other hand, an indium adatom deficient, low atomic defect surface can be observed for a high hillock density. We identify the main remaining point defect on the latter surface by comparison to STM simulations. Furthermore, we provide a method for extracting root-mean-square surface roughness values and discuss their use for surface quality optimization by comparison to scale-dependent, technologically relevant surface metrics. Finally, mapping the separately optimized regions of the growth parameter space should provide a guide for future device engineering involving epitaxial InAs(111)A growth.

cond-mat.mtrl-sci↗

arXiv2022

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In$_x$Ga$_{1-x}$As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high quality InAs transport channels with the field-effect electron mobility over~10000~cm$^2$V$^{-1}$s$^{-1}$. This is twice as high as for non-optimized samples and among the highest reported for InAs selective area grown nanostructures.

cond-mat.mtrl-sci↗

arXiv2022

Excitations in a superconducting Coulombic energy gap

Cooper pairing and Coulomb repulsion are antagonists, producing distinct energy gaps in superconductors and Mott insulators. When a superconductor exchanges unpaired electrons with a quantum dot, its gap is populated by a pair of electron-hole symmetric Yu-Shiba-Rusinov excitations between doublet and singlet many-body states. The fate of these excitations in the presence of a strong Coulomb repulsion in the superconductor is unknown, but of importance in applications such as topological superconducting qubits and multi-channel impurity models. Here we couple a quantum dot to a superconducting island with a tunable Coulomb repulsion. We show that a strong Coulomb repulsion changes the singlet many-body state into a two-body state. It also breaks the electron-hole energy symmetry of the excitations, which thereby lose their Yu-Shiba-Rusinov character.

cond-mat.mes-hall↗

arXiv2021

Epitaxy of Advanced Nanowire Quantum Devices

Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of single-crystalline nanowires coupled to superconducting islands. Here, we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks having a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire "hashtags" reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens new avenues for the realization of epitaxial 3-dimensional quantum device architectures.

cond-mat.mes-hall↗

arXiv2021

Radio-frequency C-V measurements with sub-attofarad sensitivity

We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test the measurement method on InSb and InAs nanowires at dilution-refrigerator temperatures. The measured capacitances are consistent with those inferred from the periodicity of the Coulomb blockade of quantum dots realized in the same devices. In an implementation of the resonator using an off-chip superconducting spiral inductor we find sensitivity values reaching down to 75~zF/$\sqHz$ at 1~kHz measurement bandwidth, and noise down to 0.45~aF at 1~Hz bandwidth. We estimate the sensitivity of the method for a number of other implementations. In particular we predict typical sensitivity of about 40~zF/$\sqHz$ at room temperature with a resonator comprised of off-the-shelf components. Of several proposed applications, we demonstrate two: the capacitance measurement of several identical 80~nm-wide gates with a single resonator, and the field-effect mobility measurement of an individual nanowire with the gate capacitance measured in-situ.

cond-mat.mes-hall↗

arXiv2021

Anisotropic superconductivity induced at a hybrid superconducting-semiconducting interface

Epitaxial semiconductor-superconductor heterostructures are promising as a platform for gate-tunable superconducting electronics. Thus far, the superconducting properties in such hybrid systems have been predicted based on simplified hybridization models which neglect the electronic structure that can arise at the interface. Here, we demonstrate that the hybrid electronic structure derived at the interface between semiconducting black phosphorus and atomically thin films of lead can drastically modify the superconducting properties of the thin metallic film. Using ultra-low temperature scanning tunneling microscopy and spectroscopy, we ascertain the moiré structure driven by the interface, and observe a strongly anisotropic renormalization of the superconducting gap and vortex structure of the lead film. Based on density functional theory, we attribute the renormalization of the superconductivity to weak hybridization at the interface where the anisotropic characteristics of the semiconductor band structure is imprinted on the Fermi surface of the superconductor. Based on a hybrid two-band model, we link this hybridization-driven renormalization to a weighting of the superconducting order parameter that quantitatively reproduces the measured spectra. These results illustrate the effect of interfacial hybridization at superconductor-semiconductor heterostructures, and pathways for engineering quantum technologies based on gate-tunable superconducting electronics.

cond-mat.supr-con↗

arXiv2021

Selective Area Growth Rates of III-V Nanowires

Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs as platform we show how the design parameters such as NW pitch, width, and orientation have an impact on the growth rates. We demonstrate that by varying the control parameters (i.e. substrate temperature and beam fluxes) source, balance, and sink growth modes may exist in the SAG selectivity window. Using this model, we show that inhomogeneous growth rates can be compensated by tuning the design parameters.

cond-mat.mtrl-sci↗

arXiv2021

Nontopological zero-bias peaks in full-shell nanowires induced by flux tunable Andreev states

A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements, and not the full-shell nanowire itself. Short tunneling regions never show subgap states, whereas longer junctions always do. This can be understood in terms of quantum dots forming in the junction and hosting Andreev levels in the Yu-Shiba-Rusinov regime. The intricate magnetic field dependence of the Andreev levels, through both the Zeeman and Little-Parks effects, may result in robust zero-bias peaks, features that could be easily misinterpreted as originating from Majorana zero modes, but are unrelated to topological superconductivity.

cond-mat.mes-hall↗

arXiv2021

Quasiparticle trapping by orbital effect in a hybrid superconducting-semiconducting circuit

The tunneling of quasiparticles (QPs) across Josephson junctions (JJs) detrimentally affects the coherence of superconducting and charge-parity qubits, and is shown to occur more frequently in magnetic fields. Here we demonstrate the parity lifetime to survive in excess of 50$\,\mathrmμ$s in magnetic fields up to 1$\,$T, utilising a semiconducting nanowire transmon to detect QP tunneling in real time. We exploit gate-tunable QP filters and find magnetic-field-enhanced parity lifetimes, consistent with increased QP trapping by the ungated nanowire due to orbital effects. Our findings highlight the importance of QP trap engineering for building magnetic-field compatible hybrid superconducting circuits.

cond-mat.mes-hall↗

arXiv2021

Comparing tunneling spectroscopy and charge sensing of Andreev bound states in a semiconductor-superconductor hybrid nanowire structure

Transport studies of Andreev bound states (ABSs) are complicated by the interplay of charging effects and superconductivity. Here, we compare transport approaches to ABS spectroscopy in a semiconductor-superconductor island to a charge-sensing approach based on an integrated radio-frequency single-electron transistor. Consistency of the methods demonstrates that fast, non-invasive charge sensing allows accurate quantitative measurement of ABSs while eluding some complexities of transport.

cond-mat.mes-hall↗

arXiv2021

Direct Transport between Superconducting Subgap States in a Double Quantum Dot

We demonstrate direct transport between two opposing sets of Yu-Shiba-Rusinov (YSR) subgap states realized in a double quantum dot. This sub-gap transport relies on intrinsic quasiparticle relaxation, but the tunability of the device allows us to explore also an additional relaxation mechanism based on charge transferring Andreev reflections. The transition between these two relaxation regimes is identified in the experiment as a marked gate-induced stepwise change in conductance. We present a transport calculation, including YSR bound states and multiple Andreev reflections alongside with quasiparticle relaxation, due to a weak tunnel coupling to a nearby normal metal, and obtain excellent agreement with the data.

cond-mat.mes-hall↗

arXiv2021

Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires

Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibited periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution was tunable by a gate potential as expected from electrostatic models.

cond-mat.mes-hall↗

arXiv2021

Rapid microwave-only characterization and readout of quantum dots using multiplexed gigahertz-frequency resonators

Superconducting resonators enable fast characterization and readout of mesoscopic quantum devices. Finding ways to perform measurements of interest on such devices using resonators only is therefore of great practical relevance. We report the experimental investigation of an InAs nanowire multi-quantum dot device by probing GHz resonators connected to the device. First, we demonstrate accurate extraction of the DC conductance from measurements of the high-frequency admittance. Because our technique does not rely on DC calibration, it could potentially obviate the need for DC measurements in semiconductor qubit devices. Second, we demonstrate multiplexed gate sensing and the detection of charge tunneling on microsecond time scales. The GHz detection of dispersive resonator shifts allows rapid acquisition of charge-stability diagrams, as well as resolving charge tunneling in the device with a signal-to-noise ratio of up to 15 in one microsecond. Our measurements show that GHz-frequency resonators may serve as a universal tool for fast tune-up and high-fidelity readout of semiconductor qubits.

cond-mat.mes-hall↗

arXiv2021

Evidence of Andreev blockade in a double quantum dot coupled to a superconductor

We design and investigate an experimental system capable of entering an electron transport blockade regime in which a spin-triplet localized in the path of current is forbidden from entering a spin-singlet superconductor. To stabilize the triplet a double quantum dot is created electrostatically near a superconducting lead in an InAs nanowire. The dots are filled stochastically with electrons of either spin. The superconducting lead is a molecular beam epitaxy grown Al shell. The shell is etched away over a wire segment to make room for the double dot and the normal metal gold lead. The quantum dot closest to the normal lead exhibits Coulomb diamonds, the dot closest to the superconducting lead exhibits Andreev bound states and an induced gap. The experimental observations compare favorably to a theoretical model of Andreev blockade, named so because the triplet double dot configuration suppresses Andreev reflections. Observed leakage currents can be accounted for by finite temperature. We observe the predicted quadruple level degeneracy points of high current and a periodic conductance pattern controlled by the occupation of the normal dot. Even-odd transport asymmetry is lifted with increased temperature and magnetic field. This blockade phenomenon can be used to study spin structure of superconductors. It may also find utility in quantum computing devices that utilize Andreev or Majorana states.

cond-mat.mes-hall↗

arXiv2021

Multiterminal Quantized Conductance in InSb Nanocrosses

By studying the time-dependent axial and radial growth of InSb nanowires, we map the conditions for the synthesis of single-crystalline InSb nanocrosses by molecular beam epitaxy. Low-temperature electrical measurements of InSb nanocross devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the nanocross junction is connected by few-channel quantum point contacts in the connecting nanowire terminals, we show that transport through the junction is ballistic except close to pinch-off. Combined with a new concept for shadow-epitaxy of patterned superconductors on nanocrosses, the structures reported here show promise for the realization of non-trivial topological states in multi-terminal Josephson Junctions.

cond-mat.mes-hall↗

arXiv2021

Triplet-blockaded Josephson supercurrent in double quantum dots

Serial double quantum dots created in semiconductor nanostructures provide a versatile platform for investigating two-electron spin quantum states, which can be tuned by electrostatic gating and an external magnetic field. In this work, we directly measure the supercurrent reversal between adjacent charge states of an InAs nanowire double quantum dot with superconducting leads, in good agreement with theoretical models. In the even charge parity sector, we observe a supercurrent blockade with increasing magnetic field, corresponding to the spin singlet to triplet transition. Our results demonstrate a direct spin to supercurrent conversion, the superconducting equivalent of the Pauli spin blockade. This effect can be exploited in hybrid quantum architectures coupling the quantum states of spin systems and superconducting circuits.

cond-mat.mes-hall↗

arXiv2020

A gate-tunable, field-compatible fluxonium

Circuit quantum electrodynamics, where photons are coherently coupled to artificial atoms built with superconducting circuits, has enabled the investigation and control of macroscopic quantum-mechanical phenomena in superconductors. Recently, hybrid circuits incorporating semiconducting nanowires and other electrostatically-gateable elements have provided new insights into mesoscopic superconductivity. Extending the capabilities of hybrid flux-based circuits to work in magnetic fields would be especially useful both as a probe of spin-polarized Andreev bound states and as a possible platform for topological qubits. The fluxonium is particularly suitable as a readout circuit for topological qubits due to its unique persistent-current based eigenstates. In this Letter, we present a magnetic-field compatible hybrid fluxonium with an electrostatically-tuned semiconducting nanowire as its non-linear element. We operate the fluxonium in magnetic fields up to 1T and use it to observe the $φ_0$-Josephson effect. This combination of gate-tunability and field-compatibility opens avenues for the exploration and control of spin-polarized phenomena using superconducting circuits and enables the use of the fluxonium as a readout device for topological qubits.

quant-ph↗

arXiv2020

Destructive Little-Parks Effect in a Full-Shell Nanowire-based Transmon

A semiconductor transmon with an epitaxial Al shell fully surrounding an InAs nanowire core is investigated in the low $E_J/E_C$ regime. Little-Parks oscillations as a function of flux along the hybrid wire axis are destructive, creating lobes of reentrant superconductivity separated by a metallic state at a half-quantum of applied flux. In the first lobe, phase winding around the shell can induce topological superconductivity in the core. Coherent qubit operation is observed in both the zeroth and first lobes. Splitting of parity bands by coherent single-electron coupling across the junction is not resolved beyond line broadening, placing a bound on Majorana coupling, $E_M/h$ < 10 MHz, much smaller than the Josephson coupling $E_J/h$ ~ 4.7 GHz.

cond-mat.mes-hall↗