arXiv subjects

Peter V. Sushko

Publications and source records attributed to Peter V. Sushko.

18 recordsLinked to original sources

arXiv2026

Surface Platinum Alloying for Passivation of Oxide Interfaces on Superconducting Niobium Films

Dielectric loss arising from two-level systems (TLS) at surfaces and interfaces remains a primary limitation to coherence in superconducting transmon qubits. Niobium (Nb), a widely used material in superconducting quantum circuits, readily forms native oxides under ambient conditions, leading to lossy dielectric interfaces that degrade device performance. Here, a robust and scalable fabrication strategy is demonstrated for chemically stabilizing Nb surfaces and mitigating further oxidation, including protection of both surface and sidewall regions. High-purity Nb films were fabricated with bulk-like superconducting transition temperatures ($T_c = 9.30\pm0.10$) K. We demonstrate that a thin Pt encapsulation layer, deposited after native oxide formation, can be transformed via thermal annealing into a Nb-Pt alloy at the surface. Spectroscopic and microscopic analyses confirm the formation of a chemically stable metallic alloy layer and its ability to suppress further oxide growth. Ab initio simulations elucidate the atomic-scale rearrangement and electronic structure evolution associated with Pt incorporation on native niobium oxide, providing insight into the stabilization mechanism of the alloyed surface. This approach offers a materials pathway for engineering chemically robust Nb interfaces, including sidewalls, toward higher-coherence superconducting qubit architectures."

cond-mat.supr-con↗

arXiv2026

Tantalum Damascene Coplanar Waveguide Resonators Fabricated Using 300 mm Scale Processes

Surface oxides contribute to losses in superconducting transmon devices resulting in degraded performance. We explore the use of the damascene process to replace the sidewall native oxide of a device with a metal/substrate interface. We simulate sidewall oxidation by burying an oxide layer during fabrication. We observe a modest improvement between the two types of devices, which is suggestive of a reduction in the surface participation ratio.

quant-ph↗

arXiv2026

Fabrication and Structural Analysis of Trilayers for Tantalum Josephson Junctions with Ta$_2$O$_5$ Barriers

Tantalum (Ta) has emerged as a promising low-loss material, enabling record coherence times in superconducting qubits. This enhanced performance is largely attributed to its stable native oxide, which may host fewer two-level system (TLS) defects, which are the key contributors to decoherence in superconducting circuits. Nevertheless, aluminum oxide remains the predominant choice for Josephson junction (JJ) barriers in most qubit architectures. Here, we investigate techniques for forming high-quality oxide layers on $α$-phase tantalum films to develop tantalum-oxide JJ barriers. We explore thermal oxidation in a tube furnace, rapid thermal annealing, and plasma oxidation of both room-temperature and heated Ta films, characterize the resulting structures using X-ray techniques and electron microscopy, and propose a mechanistic picture of the oxidation pathways. We find that plasma oxidation provides the smoothest Ta$_2$O$_5$ layers, is compatible with in situ Ta deposition, and offers thickness control through the annealing temperature, advantageous for JJ fabrication. Lastly, we evaluate methods for growing Ta/TaO$_x$/Ta trilayers. All trilayers showed c-axis-oriented columnar growth of the bottom Ta layer, with sapphire substrates producing larger, better-aligned grains yet higher dislocation densities than silicon. Nucleation of c-axis-oriented $α$-Ta on tantalum-oxide required an Nb seed layer, as direct Ta deposition yielded amorphous Ta. These results demonstrate the feasibility of $α$-Ta/Nb/TaO$_x$/$α$-Ta stacks for JJs with clean interfaces.

cond-mat.supr-con↗

arXiv2025

Symmetry-mediated quantum coherence of $W^{5+}$ spins in an oxygen-deficient double perovskite

Elucidating the factors limiting quantum coherence in real materials is essential to the development of quantum technologies. Here we report a strategic approach to determine the effect of lattice dynamics on spin coherence lifetimes using oxygen deficient double perovskites as host materials. In addition to obtaining millisecond $T_1$ spin-lattice lifetimes at T ~ 10 K, measurable quantum superpositions were observed up to room temperature. We determine that $T_2$ enhancement in $Sr_2CaWO_{6-δ}$ over previously studied $Ba_2CaWO_{6-δ}$ is caused by a dynamically-driven increase in effective site symmetry around the dominant paramagnetic site, assigned as $W^{5+}$ via electron paramagnetic resonance spectroscopy. Further, a combination of experimental and computational techniques enabled quantification of the relative strength of spin-phonon coupling of each phonon mode. This analysis demonstrates the effect of thermodynamics and site symmetry on the spin lifetimes of $W^{5+}$ paramagnetic defects, an important step in the process of reducing decoherence to produce longer-lived qubits.

cond-mat.mtrl-sci↗

arXiv2024

Revealing the Origin and Nature of the Buried Metal-Substrate Interface Layer in Ta/Sapphire Superconducting Films

Despite constituting a smaller fraction of the qubits electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high-loss tangents, which brings forward the need to reveal properties of these extended defects and identify routes to their control. Here, we examine the structure and composition of the metal-substrate interfacial layer that exists in Ta/sapphire-based superconducting films. Synchrotron-based X-ray reflectivity measurements of Ta films, commonly used in these qubits, reveal an unexplored interface layer at the metal-substrate interface. Scanning transmission electron microscopy and core-level electron energy loss spectroscopy identified an approximately 0.65 \ \text{nm} \pm 0.05 \ \text{nm} thick intermixing layer at the metal-substrate interface containing Al, O, and Ta atoms. Density functional theory (DFT) modeling reveals that the structure and properties of the Ta/sapphire heterojunctions are determined by the oxygen content on the sapphire surface prior to Ta deposition, as discussed for the limiting cases of Ta films on the O-rich versus Al-rich Al2O3 (0001) surface. By using a multimodal approach, integrating various material characterization techniques and DFT modeling, we have gained deeper insights into the interface layer between the metal and substrate. This intermixing at the metal-substrate interface influences their thermodynamic stability and electronic behavior, which may affect qubit performance.

cond-mat.mtrl-sci↗

arXiv2023

Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials

Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) capping layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg capping, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the capping layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems.

cond-mat.mtrl-sci↗

arXiv2023

Silicon-lattice-matched boron-doped gallium phosphide: A scalable acousto-optic platform

The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In this work we demonstrate that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths respectively. We further demonstrate the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional mapping, combined with ab initio calculations indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.

physics.optics↗

arXiv2021

Defect-Induced Magnetic Skyrmion in Two-Dimensional Chromium Tri-Iodide Monolayer

Chromium iodide monolayers, which have different magnetic properties in comparison to the bulk chromium iodide, have been shown to form skyrmionic states in applied electromagnetic fields or in Janus-layer devices. In this work, we demonstrate that spin-canted solutions can be induced into monolayer chromium iodide by select substitution of iodide atoms with isovalent impurities. Several concentrations and spatial configurations of halide substitutional defects are selected to probe the coupling between the local defect-induced geometric distortions and orientation of chromium magnetic moments. This work provides atomic-level insight into how atomically precise strain-engineering can be used to create and control complex magnetic patterns in chromium iodide layers and lays out the foundation for investigating the field- and geometric-dependent magnetic properties in similar two-dimensional materials.

physics.comp-ph↗

arXiv2018

Hole-Induced Electronic and Optical Transitions in La1-xSrxFeO3 Epitaxial Thin Films

We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward to the valence band maximum. Both Fe 2p and O 1s spectra broaden to higher binding energy with increasing x, consistent with delocalization of Sr-induced holes in the Fe 3d/O 2p hybridized valence band. Combining X-ray valence band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level, resulting from hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a insulator-to-metal transition at x equal to 1. Sub-gap optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.

cond-mat.mtrl-sci↗

arXiv2018

Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-δ / Si heterojunctions. A non-monotonic anomaly in the sheet resistance is observed near room temperature, which is accompanied by a crossover in sign of the Hall resistance. The crossover is consistent with the formation of a hole gas in the Si and the presence of a built-in field. Hard X-ray photoelectron spectroscopy measurements reveal pronounced asymmetric features in both the SrNbxTi1-xO3-δ and Si core-level spectra that we show arise from built-in fields. The extended probe depth of hard X-ray photoelectron spectroscopy enables band bending across the SrNbxTi1-xO3-δ / Si heterojunction to be spatially mapped. Band alignment at the interface and surface depletion in SrNbxTi1-xO3-δ are implicated in the formation of the hole gas and built-in fields. Control of charge transfer and built-in electric fields across semiconductor-crystalline oxide interfaces opens a pathway to novel functional heterojunctions.

cond-mat.mtrl-sci↗

arXiv2018

Interface properties and built-in potential profile of a LaCrO$_3$/SrTiO$_3$ superlattice determined by standing-wave excited photoemission spectroscopy

LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of the elemental depth profiles and interface properties, band alignments, and the depth distribution of the interface-induced built-in potentials in the two constituent oxides. We observe an alternating charged interface configuration: a positively charged (LaO)$^+$/(TiO$_2$)$^0$ intermediate layer at the LCO$_\textbf{top}$/STO$_\textbf{bottom}$ interface and a negatively charged (SrO)$^0$/(CrO$_2$)$^-$ intermediate layer at the STO$_\textbf{top}$/LCO$_\textbf{bottom}$ interface. Using core-level SW data, we have determined the depth distribution of species, including through the interfaces, and these results are in excellent agreement with scanning transmission electron microscopy and electron energy loss spectroscopy (STEM-EELS) mapping of local structure and composition. SW-XPS also enabled deconvolution of the LCO-contributed and STO- contributed matrix-element-weighted density of states (MEWDOSs) from the valence band (VB) spectra for the LCO/STO superlattice (SL). Monitoring the VB edges of the deconvoluted MEWDOS shifts with a change in probing profile, the alternating charge- induced built-in potentials are observed in both constituent oxides. Finally, using a two-step simulation approach involving first core-level binding energy shifts and then valence-band modeling, the built-in potential gradients across the SL are resolved in detail and represented by the depth distribution of VB edges.

cond-mat.mtrl-sci↗

arXiv2018

The Onset of Phase Separation in the Double Perovskite Oxide La$_2$MnNiO$_6$

Identification of kinetic and thermodynamic factors that control crystal nucleation and growth represents a central challenge in materials synthesis. Here we report that apparently defect-free growth of La$_2$MnNiO$_6$ (LMNO) thin films supported on SrTiO$_3$ (STO) proceeds up to $1-5$ nm, after which it is disrupted by precipitation of NiO phases. Local geometric phase analysis and ensemble-averaged X-ray reciprocal space mapping show no change in the film strain away from the interface, indicating that mechanisms other than strain relaxation induce the formation of the NiO phases. $Ab \, initio$ simulations suggest that oxygen vacancies become more likely with increasing thickness, due to the electrostatic potential build-up associated with the polarity mismatch at the film-substrate interface, this, in turn, promotes the formation of Ni-rich regions. These results suggest that the precipitate-free region could be extended further by increasing the oxygen chemical potential through the use of an elevated oxygen pressure or by incorporating electron redistributing dopants to suppress the built-in potential.

cond-mat.mtrl-sci↗

arXiv2017

Dynamic Interface Rearrangement in LaFeO$_3$ / $n$-SrTiO$_3$ Heterojunctions

Thin film synthesis methods developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a limited understanding of growth pathways and kinetics. Here we demonstrate that shuttered molecular beam epitaxy induces rearrangements of atomic planes at a polar / non-polar junction of LaFeO$_3$ (LFO) / $n$-SrTiO$_3$ (STO) depending on the substrate termination. Surface characterization confirms that substrates with two different (TiO$_2$ and SrO) terminations were prepared prior to LFO deposition; however, local electron energy loss spectroscopy measurements of the final heterojunctions show a predominantly LaO / TiO$_2$ interfacial junction in both cases. Ab initio simulations suggest that the interfaces can be stabilized by trapping extra oxygen (in LaO / TiO$_2$) and forming oxygen vacancies (in FeO$_2$ / SrO), which points to different growth kinetics in each case and may explain the apparent disappearance of the FeO$_2$ / SrO interface. We conclude that judicious control of deposition timescales can be used to modify growth pathways, opening new avenues to control the structure and properties of interfacial systems.

cond-mat.mtrl-sci↗

arXiv2017

Ferroelectric metal-oxide-semiconductor capacitors using ultrathin single crystalline SrZrxTi1-xO3

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x = 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm corresponding to an equivalent-oxide-thickness of just 1.0 nm exhibit a ~ 2 V hysteretic window in the capacitance-voltage characteristics. The development of ferroelectric MOS capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2016

Interface-induced Polarization in SrTiO$_3$-LaCrO$_3$ Superlattices

Epitaxial interfaces and superlattices comprised of polar and non-polar perovskite oxides have generated considerable interest because they possess a range of desirable properties for functional devices. In this work, emergent polarization in superlattices of SrTiO$_3$ (STO) and LaCrO$_3$ (LCO) is demonstrated. By controlling the interfaces between polar LCO and non-polar STO, polarization is induced throughout the STO layers of the superlattice. Using x-ray absorption near-edge spectroscopy and aberration-corrected scanning transmission electron microscopy displacements of the Ti cations off-center within TiO6 octahedra along the superlattice growth direction are measured. This distortion gives rise to built-in potential gradients within the STO and LCO layers, as measured by in situ x-ray photoelectron spectroscopy. Density functional theory models explain the mechanisms underlying this behavior, revealing the existence of both an intrinsic polar distortion and a built-in electric field, which are due to alternately positively and negatively charged interfaces in the superlattice. This study paves the way for controllable polarization for carrier separation in multilayer materials and highlights the crucial role that interface structure plays in governing such behavior.

cond-mat.mtrl-sci↗

arXiv2012

Selective Response of Mesoporous Silicon to Adsorbants with Nitro Groups

We demonstrate that the electronic structure of mesoporous silicon is affected by adsorption of nitro-based explosive molecules in a compound-selective manner. This selective response is demonstrated by probing the adsorption of two nitro-based molecular explosives (trinitrotoluene and cyclotrimethylenetrinitramine) and a nonexplosive nitro-based arematic molecule (nitrotoluene) on mesoporous silicon using soft X-ray spec- troscopy. The Si atoms strongly interact with adsorbed molecules to form Si-O and Si-N bonds, as evident from the large shifts in emission energy present in the Si L2,3 X-ray emission spectroscopy (XES) measurements. Furthermore, we find that the energy gap of mesoporous silicon changes depending on the adsorbant, as estimated from the Si L2,3 XES and 2p X-ray absorption spectroscopy (XAS) measurements. Our ab initio molecular dynamics calculations of model compounds suggest that these changes are due to spontaneous breaking of the nitro groups upon contacting surface Si atoms. This compound-selective change in electronic structure may provide a powerful tool for the detection and identification of trace quantities of airborne explosive molecules.

cond-mat.mtrl-sci↗

arXiv2008

Crystallographic Phase Transition and High-Tc Superconductivity in LaFeAsO:F

Undoped LaFeAsO, parent compound of the newly found high-Tc superconductor, exhibits a sharp decrease in the temperature-dependent resistivity at ~160 K. The anomaly can be suppressed by F doping and the superconductivity appears correspondingly, suggesting a close associate of the anomaly with the superconductivity. We examined the crystal structures, magnetic properties and superconductivity of undoped (normal conductor) and 14 at.% F-doped LaFeAsO (Tc = 20 K) by synchrotron X-ray diffraction, DC magnetic measurements, and ab initio calculations to demonstrate that the anomaly is associated with a phase transition from tetragonal (P4/nmm) to orthorhombic (Cmma) phases at ~160 K as well as an antiferromagnetic transition at ~140 K. These transitions can be explained by spin configuration-dependent potential energy surfaces derived from the ab initio calculations. The suppression of the transitions is ascribed to interrelated effects of geometric and electronic structural changes due to doping by F- ions.

cond-mat.supr-con↗

arXiv2002

Modelling charge self-trapping in wide-gap dielectrics: Localization problem in local density functionals

We discuss the adiabatic self-trapping of small polarons within the density functional theory (DFT). In particular, we carried out plane-wave pseudo-potential calculations of the triplet exciton in NaCl and found no energy minimum corresponding to the self-trapped exciton (STE) contrary to the experimental evidence and previous calculations. To explore the origin of this problem we modelled the self-trapped hole in NaCl using hybrid density functionals and an embedded cluster method. Calculations show that the stability of the self-trapped state of the hole drastically depends on the amount of the exact exchange in the density functional: at less than 30% of the Hartree-Fock exchange, only delocalized hole is stable, at 50% - both delocalized and self-trapped states are stable, while further increase of exact exchange results in only the self-trapped state being stable. We argue that the main contributions to the self-trapping energy such as the kinetic energy of the localizing charge, the chemical bond formation of the di-halogen quasi molecule, and the lattice polarization, are represented incorrectly within the Kohn-Sham (KS) based approaches.

cond-mat↗