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arXiv · 1703.00126

Ferroelectric metal-oxide-semiconductor capacitors using ultrathin single crystalline SrZrxTi1-xO3

Reza M. Moghadam·Zhiyong Xiao·Kamyar Ahmadi-Majlan·Everett D. Grimley·Mark Bowden·Phuong-Vu Ong·Scott A. Chambers·James M. Lebeau·Xia Hong·Peter V. Sushko·Joseph H. Ngai
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Abstract

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x = 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm corresponding to an equivalent-oxide-thickness of just 1.0 nm exhibit a ~ 2 V hysteretic window in the capacitance-voltage characteristics. The development of ferroelectric MOS capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.

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Reza M. Moghadam, Zhiyong Xiao, Kamyar Ahmadi-Majlan, Everett D. Grimley, Mark Bowden, Phuong-Vu Ong, Scott A. Chambers, James M. Lebeau, Xia Hong, Peter V. Sushko, Joseph H. Ngai. 2017-03-01. Ferroelectric metal-oxide-semiconductor capacitors using ultrathin single crystalline SrZrxTi1-xO3. https://arxiv.org/abs/1703.00126

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