arXiv subjects

Priya Mahadevan

Publications and source records attributed to Priya Mahadevan.

54 records · Page 3Linked to original sources

arXiv2005

The Internet AS-Level Topology: Three Data Sources and One Definitive Metric

We calculate an extensive set of characteristics for Internet AS topologies extracted from the three data sources most frequently used by the research community: traceroutes, BGP, and WHOIS. We discover that traceroute and BGP topologies are similar to one another but differ substantially from the WHOIS topology. Among the widely considered metrics, we find that the joint degree distribution appears to fundamentally characterize Internet AS topologies as well as narrowly define values for other important metrics. We discuss the interplay between the specifics of the three data collection mechanisms and the resulting topology views. In particular, we show how the data collection peculiarities explain differences in the resulting joint degree distributions of the respective topologies. Finally, we release to the community the input topology datasets, along with the scripts and output of our calculations. This supplement should enable researchers to validate their models against real data and to make more informed selection of topology data sources for their specific needs.

cs.NI↗

arXiv2005

Understanding the bulk electronic structure of Ca1-xSrxVO3

We investigate the electronic structure of Ca1-xSrxVO3 using careful state-of-the-art experiments and calculations. Photoemission spectra using synchrotron radiation reveal a hitherto unnoticed polarization dependence of the photoemission matrix elements for the surface component leading to a substantial suppression of its intensity. Bulk spectra extracted with the help of experimentally determined electron escape depth and estimated suppression of surface contributions resolve outstanding puzzles concerning the electronic structure in Ca1-xSrxVO3.

cond-mat.str-el↗

arXiv2005

Lessons from Three Views of the Internet Topology

Network topology plays a vital role in understanding the performance of network applications and protocols. Thus, recently there has been tremendous interest in generating realistic network topologies. Such work must begin with an understanding of existing network topologies, which today typically consists of a relatively small number of data sources. In this paper, we calculate an extensive set of important characteristics of Internet AS-level topologies extracted from the three data sources most frequently used by the research community: traceroutes, BGP, and WHOIS. We find that traceroute and BGP topologies are similar to one another but differ substantially from the WHOIS topology. We discuss the interplay between the properties of the data sources that result from specific data collection mechanisms and the resulting topology views. We find that, among metrics widely considered, the joint degree distribution appears to fundamentally characterize Internet AS-topologies: it narrowly defines values for other important metrics. We also introduce an evaluation criteria for the accuracy of topology generators and verify previous observations that generators solely reproducing degree distributions cannot capture the full spectrum of critical topological characteristics of any of the three topologies. Finally, we release to the community the input topology datasets, along with the scripts and output of our calculations. This supplement should enable researchers to validate their models against real data and to make more informed selection of topology data sources for their specific needs.

cs.NI↗

arXiv2005

Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors

While isovalent doping of GaAs (e.g. by In) leads to a repulsion between the solute atoms, two Cr, Mn, or Fe atoms in GaAs are found to have lower energy than the well-separated pair, and hence attract each other. The strong bonding interaction between levels with t2 symmetry on the transition metal (TM) atoms results in these atoms exhibiting a strong tendency to cluster. Using first-principles calculations, we show that this attraction is maximal for Cr, Mn and Fe while it is minimal for V. The difference is attributed to the symmetry of the highest occupied levels. While the intention is to find possible choices of spintronic materials that show a reduced tendency to cluster, one finds that the conditions that minimize clustering tendencies also minimize the stabilization of the magnetic state.

cond-mat.mtrl-sci↗

arXiv2004

Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in

We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaP, GaAs and GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, we found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.

cond-mat.other↗

arXiv2004

Unusual direction dependence of exchange energies in GaAs:Mn - Is the RKKY description relevant

Ferromagnetism in Mn-doped GaAs, the prototypical dilute magnetic semiconductor, has so far been attributed to hole mediated RKKY-type interactions. First-principles calculations reveal a strong direction dependence of the ferromagnetic (FM) stabilization energy of two magnetic ions, a dependence that cannot be explained within RKKY. In the limit of host-like hole (engineered here by an GGA+U approach with large U) where the RKKY model is applicable, we find that the exchange energies are strongly reduced, suggesting that this limit cannot explain the observed ferromagnetism. The dominant contribution stabilizing the FM state is found to be maximal for <110>-oriented pairs and minimal for <100> oriented pairs, providing an alternate explanation for magnetism in such materials in terms of energy lowering due to p-d hopping interactions, and offering a new design degree of freedom to enhance FM.

cond-mat.other↗

arXiv2003

Ferromagnetism in Mn doped GaAs due to substitutional-interstitial complexes

While most calculations on the properties of the ferromagnetic semiconductor GaAs:Mn have focussed on isolated Mn substituting the Ga site (Mn$_{Ga}$), we investigate here whether alternate lattice sites are favored and what the magnetic consequences of this might be. Under As-rich (Ga-poor) conditions prevalent at growth, we find that the formation energies are lower for Mn$_{Ga}$ over interstitial Mn (Mn$_i$).As the Fermi energy is shifted towards the valence band maximum via external $p$-doping, the formation energy of Mn$_i$ is reduced relative to Mn$_{Ga}$. Furthermore, under epitaxial growth conditions, the solubility of both substitutional and interstitial Mn are strongly enhanced over what is possible under bulk growth conditions. The high concentration of Mn attained under epitaxial growth of p-type material opens the possibility of Mn atoms forming small clusters. We consider various types of clusters, including the Coulomb-stabilized clusters involving two Mn$_{Ga}$ and one Mn$_i$. While isolated Mn$_i$ are hole killers (donors), and therefore destroy ferromagnetism,complexes such as Mn$_{Ga}$-Mn$_i$-Mn$_{Ga}$) are found to be more stable than complexes involving Mn$_{Ga}$-Mn$_{Ga}$-Mn$_{Ga}$. The former complexes exhibit partial or total quenching of holes, yet Mn$_i$ in these complexes provide a channel for a ferromagnetic arrangement of the spins on the two Mn$_{Ga}$ within the complex. This suggests that ferromagnetism in Mn doped GaAs arises both from holes due to isolated Mn$_{Ga}$ as well as from strongly Coulomb stabilized Mn$_{Ga}$-Mn$_i$-Mn$_{Ga}$ clusters.

cond-mat↗

arXiv2003

First-principles investigation of the assumptions underlying Model-Hamiltonian approaches to ferromagnetism of 3d impurities in III-V semiconductors

We use first-principle calculations for transition metal impurities V, Cr, Mn, Fe, Co and Ni in GaAs as well as Cr and Mn in GaN, GaP and GaSb to identify the basic features of the electronic structure of these systems. The microscopic details of the hole state such as the symmetry and the orbital character, as well as the nature of the coupling between the hole and the transition metal impurity are determined. This could help in the construction of model Hamiltonians to obtain a description of various properties beyond what current first-principle methods are capable of.

cond-mat↗

arXiv2002

Novel aspects and strong correlation in the electronic structure of Sr$_2$FeMoO$_6$

We investigate the electronic structure of Sr$_2$FeMoO$_6$ combining photoemission spectroscopy with a wide range of photon energies and electronic structure calculations based on first-principle as well as model Hamiltonian approaches to reveal several interesting aspects. We find evidence for unusually strong Coulomb correlation effects both in the Fe 3$d$ and O 2$p$ states, with an enhanced manifestation in the majority spin channel. Additionally, O 2$p$ states exhibit a spin-splitting of nonmagnetic origin, which nevertheless is likely to have subtle influence on the stability of novel ferromagnetism of this compound.

cond-mat.str-el↗

arXiv2001

Origin of room-temperature ferromagnetism in Mn doped semiconducting CdGeP2

CdGeP2 chalcopyrites doped with Mn have been recently found to exhibit room temperature ferromagnetism. Isovalent substitution of the Cd site is expected, however, to create antiferromagnetism, in analogy with the well-known CdTe:Mn (d^5) case. However, chalcopyrite semiconductors exhibit low-energy intrinsic defects. We show theoretically how ferromagnetism results from the interaction of Mn with hole-producing intrinsic defects.

cond-mat.str-el↗

arXiv2001

Spin, charge and orbital ordering in La0.5Sr1.5MnO4

We have analyzed the experimental evidence of charge and orbital ordering in La0.5Sr1.5MnO4 using first principles band structure calculations. Our results suggest the presence of two types of Mn sites in the system. One of the Mn sites behaves like an Mn(3+) ion, favoring a Jahn-Teller distortion of the surrounding oxygen atoms, while the distortion around the other is not a simple breathing mode kind. Band structure effects are found to dominate the experimental spectrum for orbital and charge ordering, providing an alternate explanation for the experimentally observed results.

cond-mat.str-el↗

arXiv2000

Electronic Structure of Sr_2FeMoO_6

We have analysed the unusual electronic structure of Sr_2FeMoO_6 combining ab-initio and model Hamiltonian approaches. Our results indicate that there are strong enhancements of the intraatomic exchange strength at the Mo site as well as the antiferromagnetic coupling strength between Fe and Mo sites. We discuss the possibility of a negative effective Coulomb correlation strength (U_{eff}) at the Mo site due to these renormalised interaction strengths.

cond-mat.str-el↗

arXiv2000

Electronic structure of NiS_{1-x}Se_x

We investigate the electronic structure of the metallic NiS$_{1-x}$Se$_x$ system using various electron spectroscopic techniques. The band structure results do not describe the details of the spectral features in the experimental spectrum, even for this paramagnetic metallic phase. However, a parameterized many-body multi-band model is found to be successful in describing the Ni~2$p$ core level and valence band, within the same model. The asymmetric line shape as well as the weak intensity feature in the Ni~2$p$ core level spectrum has been ascribed to extrinsic loss processes in the system. The presence of satellite features in the valence band spectrum shows the existence of the lower Hubbard band, deep inside the $pd$ metallic regime, consistent with the predictions of the dynamical mean field theory.

cond-mat.str-el↗

arXiv1999

Low-Temperature Spin Dynamics of Doped Manganites: roles of Mn-t2g and eg and O-2p states

The low-temperature spin dynamics of doped manganites have been analyzed within a tight-binding model, the parameters of which are estimated by mapping the results of ab initio density functional calculations onto the model. This approach is found to provide a good description of the spin dynamics of the doped manganites, observed earlier within the ab initio calculations. Our analysis not only provides some insight into the roles of the eg and the t2g states but also indicates that the oxygen p states play an important role in the spin dynamics. This may cast doubt on the adaptability of the conventional model Hamiltonian approaches to the analysis of spin dynamics of doped manganites.

cond-mat.mtrl-sci↗

arXiv1998

Auger transition from orbitally degenerate systems: Effects of screening and multielectron excitations

We calculate Auger spectra given by the two-hole Green's function from orbitally degenerate Hubbard-like models as a function of correlation strength and band filling. The resulting spectra are qualitatively different from those obtained from fully-filled singly degenerate models due to the presence of screening dynamics and multielectron excitations. Application to a real system shows remarkable agreement with experimental results leading to reinterpretation of spectral features.

cond-mat.str-el↗

arXiv1998

Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions

We study the evolution of the spectral function with progressive hole doping in a Mott insulator, $La_{1-x}Ca_xVO_3$ with $x$ = 0.0 - 0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter, $U/W$, is shown to describe consistently the spectral evolution.

cond-mat.str-el↗

arXiv1996

Electronic excitation spectra from ab-initio band structure results for LaMO_3 (M = Cr-Ni)

We present calculated electron excitation spectra for the LaMO_3 series (M=Cr-Ni) obtained within ab-initio band structure calculations for the real geometric and magnetic structures. The calculated results show good agreement with the experimentally obtained spectra. This suggests that the transition metal-transition metal interactions via the oxygen atom play an important role in determining the spectroscopic features and indicates a smaller value of U/t than has been believed so far. The present approach undermines the importance of multiplet interactions which otherwise play an important role within various single impurity models.

cond-mat.str-el↗

arXiv1996

Estimates of electronic interaction parameters for La$M$O$_3$ compounds ($M$=Ti-Ni) from ab-initio approaches

We have analyzed the ab-initio local density approximation band structure calculations for the family of perovskite oxides, La$M$O$_3$ with $M$=Ti-Ni within a parametrized nearest neighbor tight-binding model and extracted various interaction strengths. We study the systematics in these interaction parameters across the transition metal series and discuss the relevance of these in a many-body description of these oxides. The results obtained here compare well with estimates of these parameters obtained via analysis of electron spectroscopic results in conjunction with the Anderson impurity model. The dependence of the hopping interaction strength, t, is found to be approximately $r^{-3}$.

cond-mat↗