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Qi-Kun Xue

Publications and source records attributed to Qi-Kun Xue.

233 records · Page 13Linked to original sources
arXiv2010

Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.

cond-mat.mtrl-sci↗
arXiv2010

Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work, thickness dependent band structure of molecular beam epitaxy grown ultrathin films of Bi2Se3 is investigated by in situ angle-resolved photoemission spectroscopy. An energy gap is observed for the first time in the topologically protected metallic surface states of bulk Bi2Se3 below the thickness of six quintuple layers, due to the coupling between the surface states from two opposite surfaces of the Bi2Se3 film. The gapped surface states exhibit sizable Rashba-type spin-orbit splitting, due to breaking of structural inversion symmetry induced by SiC substrate. The spin-splitting can be controlled by tuning the potential difference between the two surfaces.

cond-mat.mtrl-sci↗
arXiv2010

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

cond-mat.mes-hall↗
arXiv2010

Landau Quantization of Massless Dirac Fermions in Topological Insulator

The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.

cond-mat.mes-hall↗
arXiv2009

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy and ex situ transport measurements reveal that the as-grown Bi2Te3 films without any doping are an intrinsic topological insulator with its Fermi level intersecting only the metallic surface states. Experimentally, we find that the single-Dirac-cone surface state develops at a thickness of two quintuple layers (2 QL). Theoretically, we show that the interaction between the surface states from both sides of the film, which is determined by the penetration depth of the topological surface state wavefunctions, sets this lower thickness limit.

cond-mat.mes-hall↗
arXiv2009

Experimental demonstration of the topological surface states protected by the time-reversal symmetry

We report direct imaging of standing waves of the nontrivial surface states of topological insulator Bi$_2$Te$_3$ by using a low temperature scanning tunneling microscope. The interference fringes are caused by the scattering of the topological states off Ag impurities and step edges on the Bi$_2$Te$_3$(111) surface. By studying the voltage-dependent standing wave patterns, we determine the energy dispersion $E(k)$, which confirms the Dirac cone structure of the topological states. We further show that, very different from the conventional surface states, the backscattering of the topological states by nonmagnetic impurities is completely suppressed. The absence of backscattering is a spectacular manifestation of the time-reversal symmetry, which offers a direct proof of the topological nature of the surface states.

cond-mat.mes-hall↗
arXiv2008

Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate

Superconductor films on semiconductor substrates draw much attention recently since the derived superconductor-based electronics have been shown promising for future data process and storage technologies. By growing atomically uniform single-crystal epitaxial Pb films of several nanometers thick on Si wafers to form a sharp superconductor-semiconductor heterojunction, we have obtained an unusual giant magnetoresistance effect when the Pb film is superconducting. In addition to the great fundamental interest of this effect, the simple structure and compatibility and scalability with current Si-based semiconductor technology offer a great opportunity for integrating superconducting circuits and detectors in a single chip.

cond-mat.mes-hall↗
arXiv2007

Atomic oxygen adsorption and incipient oxidation of the Pb(111) surface: A density-functional theory study

We study the atomic oxygen adsorption on Pb(111) surface by using density-functional theory within the generalized gradient approximation and a supercell approach. The atomic and energetic properties of purely on-surface and subsurface oxygen structures at the Pb(111) surface are systematically investigated for a wide range of coverages and adsorption sites. The fcc and tetra-II sites (see the text for definition) are found to be energetically preferred for the on-surface and subsurface adsorption, respectively, in the whole range of coverage considered. The on-surface and subsurface oxygen binding energies monotonically increase with the coverage, and the latter is always higher than the former, thus indicating the tendency to the formation of oxygen islands (clusters) and the higher stability of subsurface adsorption. The on-surface and subsurface diffusion-path energetics of atomic oxygen, and the activation barriers for the O penetration from the on-surface to the subsurface sites are presented at low and high coverages. In particular, it is shown that the penetration barrier from the on-surface hcp to the subsurface tetra-I site is as small as 65 meV at low coverage ($Θ$=0.25). The other properties of the O/Pb(111) system, including the charge distribution, the lattice relaxation, the work function, and the electronic density of states, are also studied and discussed in detail, which consistently show the gradually stabilizing ionic O-Pb bond with increase of the oxygen coverage.

cond-mat.mtrl-sci↗
arXiv2007

First-principles calculations of Cu(001) thin films: quantum size effect in surface energetics and surface chemical reactivities

First-principles calculations of Cu(001) free-standing thin films have been performed to investigate the oscillatory quantum size effects exhibited in surface energy, work function, atomic relaxation, and adsorption energy of the cesium adsorbate. The quantum well states have been shown and clarified at particular $k$-points corresponding to the stationary extrema in bulk Brillouin zone, which are in good agreement with experimental observations. The calculated surface energetics and geometry relaxations are clearly featured by quantum oscillations as a function of the film thickness of the film with oscillation periods characterized by a superposition of long and short length scales. Furthermore, we have investigated Cs adsorption onto Cu(001) thin films as a function of the film thickness. Our systematic calculated results clearly show the large-amplitude quantum oscillations in adsorption energetics, which may be used to tailor catalysis, chemical reactions and other surface processes in nanostructured materials.

cond-mat.mes-hall↗
arXiv2005

Quantum size effects on the perpendicular upper critical field in ultra-thin lead films

We report the thickness-dependent (in terms of atomic layers) oscillation behavior of the perpendicular upper critical field $H_{c2\perp}$ in the ultra-thin lead films at the reduced temperature ($t=T/T_c$). Distinct oscillations of the normal-state resistivity as a function of film thickness have also been observed. Compared with the $T_c$ oscillation, the $H_{c2\perp}$ shows a considerable large oscillation amplitude and a $π$ phase shift. The oscillatory mean free path caused by quantum size effect plays a role in $H_{c2\perp}$ oscillation.

cond-mat.supr-con↗
arXiv2003

Spin Current Through a Magnetic-Oscillating Quantum Dot

Non-equilibrium spin transport through an interacting quantum dot is analyzed. The coherent spin oscillations in the dot provide a generating source for spin current. In the interacting regime, the Kondo effect is influenced in a significant way by the presence of the precessing magnetic field. In particular, when the precession frequency is tuned to resonance between spin up and spin down states of the dot, Kondo singularity for each spin splits into a superposition of two resonance peaks. The Kondo-type cotunneling contribution is manifested by a large enhancement of the pumped spin current in the strong coupling, low temperature regime.

cond-mat.mes-hall↗
arXiv2002

Quantum Entanglement of Excitons in Coupled Quantum Dots

Optically-controlled exciton dynamics in coupled quantum dots is studied. We show that the maximally entangled Bell states and Greenberger-Horne-Zeilinger (GHZ) states can be robustly generated by manipulating the system parameters to be at the avoided crossings in the eigenenergy spectrum. The analysis of population transfer is systematically carried out using a dressed-state picture. In addition to the quantum dot configuration that have been discussed by Quiroga and Johnson [Phys. Rev. Lett. \QTR{bf}{83}, 2270 (1999)], we show that the GHZ states also may be produced in a ray of three quantum dots with a shorter generation time.

cond-mat.mes-hall↗
arXiv2002

Coulomb-enhanced dynamic localization and Bell state generation in coupled quantum dots

We investigate the dynamics of two interacting electrons in coupled quantum dots driven by an AC field. We find that the two electrons can be trapped in one of the dots by the AC field, in spite of the strong Coulomb repulsion. In particular, we find that the interaction may enhance the localization effect. We also demonstrate the field excitation procedure to generate the maximally entangled Bell states. The generation time is determined by both analytic and numerical solutions of the time dependent Schrodinger equation.

cond-mat.mes-hall↗
arXiv2002

Dynamics of spin-2 Bose condensate driven by external magnetic fields

Dynamic response of the F=2 spinor Bose-Einstein condensate (BEC) under the influence of external magnetic fields is studied. A general formula is given for the oscillation period to describe population transfer from the initial polar state to other spin states. We show that when the frequency and the reduced amplitude of the longitudinal magnetic field are related in a specific manner, the population of the initial spin-0 state will be dynamically localized during time evolution. The effects of external noise and nonlinear spin exchange interaction on the dynamics of the spinor BEC are studied. We show that while the external noise may eventually destroy the Rabi oscillations and dynamic spin localization, these coherent phenomena are robust against the nonlinear atomic interaction.

cond-mat.mes-hall↗
arXiv2002

Spin-Dependent Transport Through An Interacting Quantum Dot

We study the nonequilibrium spin transport through a quantum dot containing two spin levels coupled to the magnetic electrodes. A formula for the spin-dependent current is obtained and is applied to discuss the linear conductance and magnetoresistance in the interacting regime, where the so-called Kondo effect arises. We show that the Kondo resonance and the correlation-induced spin splitting of the dot levels may be systematically controlled by internal magnetization in the electrodes. As a result, when the electrodes are in parallel magnetic configuration, the linear conductance is characterized by two spin-resolved peaks. Furthermore, the presence of the spin-flip process in the dot splits the Kondo resonance into three peaks.

cond-mat.mes-hall↗