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Qi-Kun Xue

Publications and source records attributed to Qi-Kun Xue.

At least 109 records · Page 6Linked to original sources

Direct observation of nodeless superconductivity and phonon modes in electron-doped copper oxide Sr$_{1-x}$Nd$_x$CuO$_2$

The microscopic understanding of high-temperature superconductivity in cuprates has been hindered by the apparent complexity of crystal structures in these materials. We used scanning tunneling microscopy and spectroscopy to study an electron-doped copper oxide compound Sr$_{1-x}$Nd$_x$CuO$_2$ that has only bare cations separating the CuO$_2$ planes and thus the simplest infinite-layer structure among all cuprate superconductors. Tunneling conductance spectra of the major CuO$_2$ planes in the superconducting state revealed direct evidence for a nodeless pairing gap, regardless of variation of its magnitude with the local doping of trivalent neodymium. Furthermore, three distinct bosonic modes are observed as multiple peak-dip-hump features outside the superconducting gaps and their respective energies depend little on the spatially varying gaps. Along with the bosonic modes with energies identical to those of the external, bending and stretching phonons of copper oxides, our findings indicate their origin from lattice vibrations rather than spin excitations.

cond-mat.supr-con↗

Percolative Superconductivity in Electron-Doped Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ Films

Electron-doped infinite-layer Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ films over a wide doping range have been prepared epitaxially on SrTiO$_3$(001) using reactive molecular beam epitaxy. In-plane transport measurements of the single crystalline samples reveal a dome-shaped nodeless superconducting phase centered at $x$ $\sim$ 0.15, a Fermi-liquid behavior and pronounced upturn in low temperature resistivity. We show that the resistivity upturn follows square-root temperature dependence, suggesting the emergence of superconductivity via a three-dimensional percolation process. The percolative superconductivity is corroborated spectroscopically by imaging the electronic phase separation between superconducting and metallic phases with low-temperature scanning tunneling microscopy. Furthermore, we visualize interstitial and apical oxygen anions that rapidly increase in number as $x>$ 0.12, and elucidate their impacts on the superconductivity and normal-state resistivity.

cond-mat.supr-con↗

Little-Parks like oscillations in lightly doped cuprate superconductors

Understanding the rich and competing electronic orders in cuprate superconductors may provide important insight into the mechanism of high-temperature superconductivity. Here, by measuring Bi2Sr2CaCu2O8+x in the extremely underdoped regime, we obtain evidence for a distinct type of ordering, which manifests itself as resistance oscillations at low magnetic fields (<10 T) and at temperatures around the superconducting transition. By tuning the doping level p continuously, we reveal that these low-field oscillations occur only when p<0.1. The oscillation amplitude increases with decreasing p but the oscillation period stays almost constant. We show that these low-field oscillations can be well described by assuming a periodic superconducting structure with a mesh size of about 50 nm. Such a charge order, which is distinctly different from the well-established charge density wave and pair density wave, seems to be an unexpected piece of the puzzle on the correlated physics in cuprates.

cond-mat.supr-con↗

Berry-phase switch in electrostatically-confined topological surface states

Here we visualize the trapping of topological surface states in the circular n-p junctions on the top surface of the 7-quintuple-layer three dimensional (3D) topological insulator (TI) Sb2Te3 epitaxial films. As shown by spatially- and field-dependent tunneling spectra, these trapped resonances show field-induced splittings between the degenerate time-reversal-symmetric states at zero magnetic field. These behaviors are attributed unambiguously to Berry-phase switch by comparing the experimental data with both numerical and semi-classical simulations. The successful electrostatic trapping of topological surface states in epitaxial films and the observation of Berry-phase switch provide a rich platform of exploiting new ideas for TI-based quantum devices.

cond-mat.mes-hall↗

Tuning the electronic states and superconductivity in alkali fulleride films

The successful preparation of superconducting alkali fulleride (A$_x$C$_{60}$, A = K, Rb, Cs) films using state-of-the-art molecular beam epitaxy overcomes the disadvantages of the air-sensitivity and phase separation in bulk A$_x$C$_{60}$, enabling for the first time a direct investigation of the superconductivity in alkali fullerides on the molecular scale. In this paper, we briefly review recent cryogenic scanning tunneling microscopy results of the structural, electronic, and superconducting properties of the fcc A$_x$C$_{60}$ films grown on graphitized SiC substrates. Robust $s$-wave superconductivity is revealed against the pseudogap, electronic correlation, non-magnetic impurities, and merohedral disorder. By controlling the alkali metal species, film thickness, and electron doping, we systematically tune the C$_{60}^{x-}$ orientational orderings and superconductivity in A$_x$C$_{60}$ films and then complete a unified phase diagram of superconducting gap size vs electronic correlation and doping. These investigations are conclusive and elucidated that the $s$-wave superconductivity retains in alkali fullerides despite of the electronic correlation and presence of pseudogap.

cond-mat.supr-con↗

Selective Trapping of Hexagonally Warped Topological Surface States in a Triangular Quantum Corral

The surface of a three-dimensional topological insulator (TI) hosts two-dimensional massless Dirac fermions (DFs), the gapless and spin-helical nature of which yields many exotic phenomena, such as the immunity of topological surface states (TSS) to back-scattering. This leads to their high transmission through surface defects or potential barriers. Quantum corrals, previously elaborated on metal surfaces, can act as nanometer-sized electronic resonators to trap Schrödinger electrons by quantum confinement. It is thus intriguing, concerning their peculiar nature, to put the Dirac electrons of TSS to the test in similar circumstances. Here, we report the behaviors of TSS in a triangular quantum corral (TQC) fabricated by epitaxially growing Bi bilayer nanostructures on the surfaces of Bi2Te3 films. Unlike a circular corral, the TQC is supposed to be totally transparent for DFs. By mapping the electronic structure of TSS inside TQCs through a low-temperature scanning tunneling microscope in the real space, both the trapping and de-trapping behaviors of the TSS electrons are observed. The selection rules are found to be governed by the geometry and spin texture of the constant energy contour of TSS upon the strong hexagonal warping in Bi2Te3. Careful analysis of the quantum interference patterns of quasi-bound states yields the corresponding wave vectors of trapped TSS, through which two trapping mechanisms favoring momenta in different directions are uncovered. Our work indicates the extended nature of TSS and elucidates the selection rules of the trapping of TSS in the presence of a complicated surface state structure, giving insights into the effective engineering of DFs in TIs.

cond-mat.mes-hall↗

Semiconductor-metal phase transition and emergent charge density waves in 1T-ZrX$_2$ (X = Se, Te) at the two-dimensional limit

Charge density wave (CDW) is a collective quantum phenomenon in metals and features a wave-like modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX$_2$ (X = Se, Te) ultra-thin films, accompanied by a commensurate 2 $\times$ 2 CDW order. Furthermore, we observed a CDW energy gap up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX$_2$ films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of Zr 4d-derived elliptical electron conduction band at the corners of the Brillouin zone.

cond-mat.mtrl-sci↗

Observation of Aharonov-Bohm effect in PbTe nanowire networks

We report phase coherent electron transport in PbTe nanowire networks with a loop geometry. Magneto-conductance shows Aharonov-Bohm (AB) oscillations with periods of $h/e$ and $h/2e$ in flux. The amplitude of $h/2e$ oscillations is enhanced near zero magnetic field, possibly due to interference between time-reversal paths. Temperature dependence of the AB amplitudes suggests a phase coherence length $\sim$ 8 - 12 $μ$m at 50 mK. This length scale is larger than the typical geometry of PbTe-based hybrid semiconductor-superconductor nanowire devices.

cond-mat.mes-hall↗

Ambi-chiral anomalous Hall effect in magnetically doped topological insulators

The chirality associated with broken time reversal symmetry in magnetically doped topological insulators has important implications to the quantum transport phenomena. Here we report the anomalous Hall effect studies in Mn- and Cr-doped Bi$_2$Te$_3$ topological insulators with varied thickness and doping content. By tracing the chirality of the Hall loops, we find that the Mn-type anomalous Hall effect with clockwise chirality is strengthened by the reduction of film thickness, which is opposite to that of the Cr-type anomalous Hall effect with counterclockwise chirality. We provide a phenomenological model to explain the evolution of magnetic order and anomalous Hall effect chirality in magnetically doped topological insulators.

cond-mat.mes-hall↗

Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate

Topological quantum computing is based on braiding of Majorana zero modes encoding topological qubits. A promising candidate platform for Majorana zero modes is semiconductor-superconductor hybrid nanowires. The realization of topological qubits and braiding operations requires scalable and disorder-free nanowire networks. Selective area growth of in-plane InAs and InSb nanowires, together with shadow-wall growth of superconductor structures, have demonstrated this scalability by achieving various network structures. However, the noticeable lattice mismatch at the nanowire-substrate interface, acting as a disorder source, imposes a serious obstacle along with this roadmap. Here, combining selective area and shadow-wall growth, we demonstrate the fabrication of PbTe-Pb hybrid nanowires - another potentially promising Majorana system - on a nearly perfectly lattice-matched substrate CdTe, all done in one molecular beam epitaxy chamber. Transmission electron microscopy shows the single-crystal nature of the PbTe nanowire and its atomically sharp and clean interfaces to the CdTe substrate and the Pb overlayer, without noticeable inter-diffusion or strain. The nearly ideal interface condition, together with the strong screening of charge impurities due to the large dielectric constant of PbTe, hold promise towards a clean nanowire system to study Majorana zero modes and topological quantum computing.

cond-mat.mes-hall↗

Honeycomb lattice in metal-rich chalcogenide Fe2Te

Two-dimensional honeycomb crystals have inspired intense research interest for their novel properties and great potential in electronics and optoelectronics. Here, through molecular beam epitaxy on SrTiO3(001), we report successful epitaxial growth of metal-rich chalcogenide Fe2Te, a honeycomb-structured film that has no direct bulk analogue, under Te-limited growth conditions. The structural morphology and electronic properties of Fe2Te are explored with scanning tunneling microscopy and angle resolved photoemission spectroscopy, which reveal electronic bands cross the Fermi level and nearly flat bands. Moreover, we find a weak interfacial interaction between Fe2Te and the underlying substrates, paving a newly developed alternative avenue for honeycomb-based electronic devices.

cond-mat.mtrl-sci↗

Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-($\sqrt{3}\times \sqrt{3}$)-R30$^\textrm{o}$

Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-($\sqrt{3}\times \sqrt{3}$)-R30$^\textrm{o}$. In underdoped regions, we observe a universal pseudogap opening around the Fermi level, which changes little with the applied magnetic field and the occurrence of Sn vacancies. The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase. Our findings, along with the previously observed superconductivity at a higher doping level, are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.

cond-mat.str-el↗

Evolution of electronic structure in pristine and hole-doped kagome metal RbV$_3$Sb$_5$

We report on in situ low-temperature (4 K) scanning tunneling microscope measurements of atomic and electronic structures of the cleaved surfaces of an alkali-based kagome metal RbV$_3$Sb$_5$ single crystals. We find that the dominant pristine surface exhibits Rb-1x1 structure, in which a unique unidirectional $\sqrt{3}a_0$ charge order is discovered. As the sample temperature slightly rises, Rb-$\sqrt{3}$x1 and Rb-$\sqrt{3}$x$\sqrt{3}$ reconstructions form due to desorption of surface Rb atoms. Our conductance mapping results demonstrate that Rb desorption not only gives rise to hole doping, but also renormalizes the electronic band structures. Surprisingly, we find a ubiquitous gap opening near the Fermi level in tunneling spectra on all the surfaces despite their large differences of hole-carrier concentration, indicating an orbital-selective band reconstruction in RbV$_3$Sb$_5$.

cond-mat.supr-con↗

Coexistence of resistance oscillations and the anomalous metal phase in a lithium intercalated TiSe$_2$ superconductor

Superconductivity and charge density wave (CDW) appear in the phase diagram of a variety of materials including the high - $T$$_c$ cuprate family and many transition metal dichalcogenides (TMDs). Their interplay may give rise to exotic quantum phenomena. Here, we show that superconducting arrays can spontaneously form in TiSe$_2$ - a TMD with coexisting superconductivity and CDW - after lithium ion intercalation. We induce a superconducting dome in the phase diagram of Li$_x$TiSe$_2$ by using the ionic solid-state gating technique. Around optimal doping, we observe magnetoresistance oscillations, indicating the emergence of periodically arranged domains. In the same temperature, magnetic field and carrier density regime where the resistance oscillations occur, we observe signatures for the anomalous metal - a state with a resistance plateau across a wide temperature range below the superconducting transition. Our study not only sheds further insight into the mechanism for the periodic electronic structure, but also reveals the interplay between the anomalous metal and superconducting fluctuations.

cond-mat.supr-con↗

Atomic-Scale Probing of Heterointerface Phonon Bridges in Nitride Semiconductor

Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and light emitting diodes. Here we measure the local phonon spectra across AlN/Si and AlN/Al interfaces using atomically resolved vibrational electron energy-loss spectroscopy in a scanning transmission electron microscope. At the AlN/Si interface, we observe various localized phonon modes, of which the extended and interfacial modes act as bridges to connect the bulk AlN modes and bulk Si modes, and are expected to boost the inelastic phonon transport thus substantially contribute to interface thermal conductance. In comparison, no such phonon bridge is observed at the AlN/Al interface, for which partially extended modes dominate the interface thermal conductivity. This work provides valuable insights into understanding the interfacial thermal transport in nitride semiconductors and useful guidance for thermal management via interface engineering.

cond-mat.mes-hall↗

The observation of in-plane quantum Griffiths singularity in two-dimensional crystalline superconductors

Quantum Griffiths singularity (QGS) reveals the profound influence of quenched disorder on the quantum phase transitions, characterized by the divergence of the dynamical critical exponent at the boundary of the vortex glass-like phase, named as quantum Griffiths phase. However, in the absence of vortices, whether the QGS can exist under parallel magnetic field remains a puzzle. Here we study the magnetic field induced superconductor-metal transition in ultrathin crystalline PdTe2 films grown by molecular beam epitaxy. Remarkably, the QGS emerges under both perpendicular and parallel magnetic field in 4-monolayer PdTe2 films. The direct activated scaling analysis with a new irrelevant correction has been proposed, providing important evidence of QGS. With increasing film thickness to 6 monolayers, the QGS disappears under perpendicular field but persists under parallel field, and this discordance may originate from the differences in microscopic processes. Our work demonstrates the universality of parallel field induced QGS and can stimulate further investigations on novel quantum phase transitions under parallel magnetic field.

cond-mat.supr-con↗

Presence of $s$-wave pairing in Josephson junctions made of twisted ultrathin Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ flakes

Since the discovery of high temperature superconductivity in cuprates, Josephson junction based phase-sensitive experiments are believed and used to provide the most convincing evidence for determining the pairing symmetry. Regardless of different junction materials and geometries used, quantum tunneling involved in these experiments is essentially a nanoscale process, and thus, actual experimental results are extremely sensitive to atomic details of the junction structures. The situation has led to controversial results as to the nature of the pairing symmetry of cuprates: while in-plane junction experiments generally support $d$-wave pairing symmetry, those based on out-of-plane ($c$-axis) Josephson junctions between two rotated cuprate blocks favor $s$-wave pairing. In this work, we revisit the $c$-axis experiment by fabricating Josephson junctions with atomic-level control in their interface structure. We fabricate over 90 junctions of ultrathin Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO) flakes by state-of-the-art exfoliation technique and obtain atomically flat junction interfaces in the whole junction regions as characterized by high resolution transmission electron microscopy (TEM). Notably, the resultant uniform junctions at various twist angles all exhibit a single tunneling branch behavior, suggesting that only the first half a unit cell on both sides of the twisted flakes is involved in Josephson tunneling process. With such well-defined geometry/structure and the characteristic single tunneling branch, we repeatedly observe Josephson tunneling at a nominal twist angle of 45 degrees, which is against the expectation from a purely $d$-wave pairing scenario. Our results strongly favor the scenario of a persistent $s$-wave order parameter in the junction.

cond-mat.supr-con↗

Incommensurate smectic phase in close proximity to the high-Tc superconductor FeSe/SrTiO3

Superconductivity is significantly enhanced in monolayer FeSe grown on SrTiO3, but not for multilayer films, in which large strength of nematicity develops. However, the link between the high-transition temperature superconductivity in monolayer and the correlation related nematicity in multilayer FeSe films is not well understood. Here, we use low-temperature scanning tunneling microscopy to study few-layer FeSe thin films grown by molecular beam epitaxy. We observe an incommensurate long-range smectic phase, which solely appears in bilayer FeSe films. The smectic order still locally exists and gradually fades away with increasing film thickness, while it suddenly vanishes in monolayer FeSe, indicative of an abrupt smectic phase transition. Surface alkali-metal doping can suppress the smectic phase and induce high-Tc superconductivity in bilayer FeSe. Our observations provide evidence that the monolayer FeSe is in close proximity to the smectic phase, and its superconductivity is likely enhanced by this electronic instability as well.

cond-mat.supr-con↗