arXiv subjects

Qi-Kun Xue

Publications and source records attributed to Qi-Kun Xue.

At least 127 records · Page 7Linked to original sources

arXiv2021

Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films

We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film. Ic can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K < T < 3.8 K while for T < 0.7 K the diffusive bulk modes emerge and contribute a larger Ic than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.

cond-mat.supr-con↗

arXiv2021

Merohedral disorder and impurity impacts on superconductivity of fullerenes

Local quasiparticle states around impurities provide essential insight into the mechanism of unconventional superconductivity, especially when the candidate materials are proximate to an antiferromagnetic Mott-insulating phase. While such states have been reported in atom-based cuprates and iron-based compounds, they are unexplored in organic superconductors which feature tunable molecular orientation. Here we employ scanning tunneling microscopy and spectroscopy to reveal multiple forms of robustness of an exotic $s$-wave superconductivity in epitaxial Rb$_3$C$_{60}$ films against merohedral disorder, non-magnetic single impurities and step edges at the atomic scale. Also observed have been Yu-Shiba-Rusinov (YSR) states induced by deliberately incurred Fe adatoms that act as magnetic scatters. The bound states display abrupt spatial decay and vary in energy with the Fe adatom registry. Our results and the universal optimal superconductivity at half-filling point towards local electron pairing in which the multiorbital electronic correlations and intramolecular phonons together drive the high-temperature superconductivity of doped fullerenes.

cond-mat.supr-con↗

arXiv2021

Charge density waves and Fermi level pinning in monolayer and bilayer SnSe$_2$

Materials with reduced dimensionality often exhibit exceptional properties that are different from their bulk counterparts. Here we report the emergence of a commensurate 2 $\times$ 2 charge density wave (CDW) in monolayer and bilayer SnSe$_2$ films by scanning tunneling microscope. The visualized spatial modulation of CDW phase becomes prominent near the Fermi level, which is pinned inside the semiconductor band gap of SnSe$_2$. We show that both CDW and Fermi level pinning are intimately correlated with band bending and virtual induced gap states at the semiconductor heterointerface. Through interface engineering, the electron-density-dependent phase diagram is established in SnSe$_2$. Fermi surface nesting between symmetry inequivalent electron pockets is revealed to drive the CDW formation and to provide an alternative CDW mechanism that might work in other compounds.

cond-mat.mtrl-sci↗

arXiv2020

Origin of the Electronic Structure in Single-Layer FeSe/SrTiO3 Films

The accurate theoretical description of the underlying electronic structures is essential for understanding the superconducting mechanism of iron-based superconductors. Compared to bulk FeSe, the superconducting single-layer FeSe/SrTiO3 films exhibit a distinct electronic structure consisting of only electron Fermi pockets, due to the formation of a new band gap at the Brillouin zone (BZ) corners and an indirect band gap between the BZ center and corners. Although intensive studies have been carried out, the origin of such a distinct electronic structure and its connection to bulk FeSe remain unclear. Here we report a systematic study on the temperature evolution of the electronic structure in single-layer FeSe/SrTiO3 films by angle-resolved photoemission spectroscopy. A temperature-induced electronic phase transition was clearly observed at 200 K, above which the electronic structure of single-layer FeSe/SrTiO3 films restored to that of bulk FeSe, characterized by the closing of the new band gap and the vanishing of the indirect band gap. Moreover, the interfacial charge transfer effect induced band shift of ~ 60 meV was determined for the first time. These observations not only show the first direct evidence that the electronic structure of single-layer FeSe/SrTiO3 films originates from bulk FeSe through a combined effect of an electronic phase transition and an interfacial charge transfer, but also provide a quantitative basis for theoretical models in describing the electronic structure and understanding the superconducting mechanism in single-layer FeSe/SrTiO3 films.

cond-mat.supr-con↗

arXiv2020

Molecular beam epitaxy growth and surface structure of Sr1-xNdxCuO2 cuprate films

We report on the epitaxial growth and surface structure of infinite-layer cuprate Sr1-xNdxCuO2 films on SrTiO3(001) substrates by combining ozone-assisted molecular beam epitaxy and in situ scanning tunneling microscopy. Careful substrate temperature and flux control has been used to achieve single-phase, stoichiometric, and c-axis oriented films. The surface of the films is usually characterized by a mixed CuO2 surface and gridlike superstructure. The superstructure exhibits a periodicity of 3.47 nm that corresponds to a coincidence lattice between the overlayer peroxide SrO2 and underlying CuO2 plane, and gives rise to a conductance spectrum that is distinct from the Mott-Hubbard band structure of CuO2. At a higher Nd composition x > 0.1, a (2 x 2) surface characteristic of the hole-doped CuO2 emerges, which we ascribe to the intake of apical oxygens in the intervening Sr planes.

cond-mat.supr-con↗

arXiv2020

Electronic inhomogeneity and band structure on superstructural CuO2 planes of infinite-layer Sr0.94La0.06CuO2+y films

Scanning tunneling microscopy and spectroscopy are utilized to study the atomic-scale structure and electronic properties of infinite-layer Sr0.94La0.06CuO2+y films prepared on SrRuO3-buffered SrTiO3(001) substrate by ozone-assisted molecular beam epitaxy. Incommensurate structural supermodulation with a period of 24.5Å is identified on the CuO2-terminated surface, leading to characteristic stripes running along the 45o direction with respect to the Cu-O-Cu bonds. Spatially resolved tunneling spectra reveal substantial inhomogeneity on a nanometer length scale and emergence of in-gap states at sufficient doping. Despite the Fermi level shifting up to 0.7 eV, the charge-transfer energy gap of the CuO2 planes remains fundamentally unchanged at different doping levels. The occurrence of the CuO2 superstructure is constrained in the surface region and its formation is found to link with oxygen intake that serves as doping agent of holes in the epitaxial films.

cond-mat.supr-con↗

arXiv2020

Direct visualization of ambipolar Mott transition in cuprate CuO2 planes

Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott transition in Sr1-xLaxCuO2+y cuprate films that cover the entire electron- and hole-doped regimes. Tunneling conductance measurements directly on the cooper-oxide (CuO2) planes reveal a systematic shift in the Fermi level, while the fundamental Mott-Hubbard band structure remains unchanged. This is further demonstrated by exploring atomic-scale electronic response of CuO2 to substitutional dopants and intrinsic defects in a sister compound Sr0.92Nd0.08CuO2. The results could be better explained in the framework of self-modulation doping, similar to that in semiconductor heterostructures, and form a basis for developing any microscopic theories for cuprate superconductivity.

cond-mat.supr-con↗

arXiv2020

Stoichiometry and defect superstructures in epitaxial FeSe films on SrTiO3

Cryogenic scanning tunneling microscopy is employed to investigate the stoichiometry and defects of epitaxial FeSe thin films on SrTiO3(001) substrates under various post-growth annealing conditions. Low-temperature annealing with an excess supply of Se leads to formation of Fe vacancies and superstructures, accompanied by a superconductivity (metal)-to-insulator transition in FeSe films. By contrast, high-temperature annealing could eliminate the Fe vacancies and superstructures, and thus recover the high-temperature superconducting phase of monolayer FeSe films. We also observe multilayer FeSe during low-temperature annealing, which is revealed to link with Fe vacancy formation and adatom migration. Our results document very special roles of film stoichiometry and help unravel several controversies in the properties of monolayer FeSe films.

cond-mat.supr-con↗

arXiv2020

Direct Observation of One-Dimensional Peierls-Type Charge Density Wave in Twin Boundaries of Monolayer MoTe$_2$

One-dimensional (1D) metallic mirror-twin boundaries (MTBs) in monolayer transition metal dichalcogenides (TMDCs) exhibit a periodic charge modulation and provide an ideal platform for exploring collective electron behavior in the confined system. The underlying mechanism of the charge modulation and how the electrons travel in 1D structures remain controversial. Here, for the first time, we observed atomic-scale structures of the charge distribution within one period in MTB of monolayer MoTe2 by using scanning tunneling microscopy/spectroscopy (STM/STS). The coexisting apparent periodic lattice distortions and U-shaped energy gap clearly demonstrate a Peierls-type charge density wave (CDW). Equidistant quantized energy levels with varied periodicity are further discovered outside the CDW gap along the metallic MTB. Density functional theory (DFT) calculations are in good agreement with the gapped electronic structures and reveal they originate mainly from Mo 4d orbital. Our work presents hallmark evidence of the 1D Peierls-type CDW on the metallic MTBs and offers opportunities to study the underlying physics of 1D charge modulation.

cond-mat.mtrl-sci↗

arXiv2020

Electronic states and magnetic response of MnBi2Te4 by scanning tunneling microscopy and spectroscopy

Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi2Te4. At its two-dimensional limit, quantum anomalous Hall (QAH) effect and axion insulator state are observed in odd and even layers of MnBi2Te4, respectively. The measured band structures exhibit intriguing and complex properties. Here we employ low-temperature scanning tunneling microscopy to study its surface states and magnetic response. The quasiparticle interference patterns indicate that the electronic structures on the topmost layer of MnBi2Te4 is different from that of the expected out-of-plane A-type antiferromagnetic phase. The topological surface states may be embedded in deeper layers beneath the topmost surface. Such novel electronic structure presumably related to the modification of crystalline structure during sample cleaving and re-orientation of magnetic moment of Mn atoms near the surface. Mn dopants substituted at the Bi site on the second atomic layer are observed. The ratio of Mn/Bi substitutions is 5%. The electronic structures are fluctuating at atomic scale on the surface, which can affect the magnetism of MnBi2Te4. Our findings shed new lights on the magnetic property of MnBi2Te4 and thus the design of magnetic topological insulators.

cond-mat.mtrl-sci↗

arXiv2019

Visualizing molecular orientational ordering and electronic structure in CsnC60 fulleride films

Alkali-doped fullerides exhibit a wealth of unusual phases that remain controversial by nature. Here we report a cryogenic scanning tunneling microscopy study of the sub-molecular structural and electronic properties of expanded fullerene C60 films with various cesium (Cs) doping. By varying the discrete charge states and film thicknesses, we reveal a large tunability of orientational ordering of C60 anions, yet the tunneling conductance spectra are all robustly characteristic of energy gaps, hallmarks of Jahn-Teller instability and electronic correlations. The Fermi level lies halfway within the insulating gap for stoichiometric Cs doping level of n = 1, 2, 3 and 4, apart from which it moves toward band edges with concomitant electronic states within the energy gap. Our findings establish the universality of Jahn-Teller instability, and clarify the relationship among the doping, structural and electronic structures in CsnC60 fullerides.

cond-mat.supr-con↗

arXiv2019

Coexistence of full-gap superconductivity and pseudogap in two-dimensional fullerides

Alkali-fulleride superconductors with a maximum critical temperature Tc of 40 K exhibit similar electronic phase diagram with unconventional high-Tc superconductors where the superconductivity resides proximate to a magnetic Mott-insulating state. However, distinct from cuprate compounds, which superconduct through two-dimensional (2D) CuO2 planes, alkali fullerides are attributed to the three-dimensional (3D) members of high-Tc family. Here, we employ scanning tunneling microscopy to show that trilayer K3C60 displays fully gapped strong coupling s-wave superconductivity that coexists spatially with a cuprate-like pseudogap state above Tc = 22 K and within vortices. A precise control of electronic correlations and doping reveals that superconductivity occurs near a superconductor-Mott insulator transition and reaches maximum at half-filling. The s-wave symmetry retains over the entire phase diagram, which, in conjunction with an abrupt decline of superconductivity below half-filling, demonstrates that alkali fullerides are predominantly phonon-mediated superconductors, although the multiorbital electronic correlations also come into play.

cond-mat.supr-con↗

arXiv2019

Topological Dynamical Decoupling

We show that topological equivalence classes of circles in a two-dimensional square lattice can be used to design dynamical decoupling procedures to protect qubits attached on the edges of the lattice. Based on the circles of the topologically trivial class in the original and the dual lattices, we devise a procedure which removes all kinds of local Hamiltonians from the dynamics of the qubits while keeping information stored in the homological degrees of freedom unchanged. If only the linearly independent interaction and nearest-neighbor two-qubit interactions are concerned, a much simpler procedure which involves the four equivalence classes of circles can be designed. This procedure is compatible with Eulerian and concatenated dynamical decouplings, which make it possible to implement the procedure with bounded-strength controls and for a long time period. As an application, it is shown that our method can be directly generalized to finite square lattices to suppress uncorrectable errors in surface codes.

quant-ph↗

arXiv2019

Dimensional crossover and topological nature of the thin films of a three-dimensional topological insulator by band gap engineering

Identification and control of topological phases in topological thin films offer great opportunity for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission spectroscopy and ab-initio calculations, we investigate the electronic structure evolution in (Bi1-xInx)2Se3 films with thickness from 2 to 13 quintuple layers. We identify several phases with their characteristic topological nature and evolution between them, i.e., dimensional crossover from a three-dimensional topological insulator with gapless surface state to its two-dimensional counterpart with gapped surface state, and topological phase transition from topological insulator to a normal semiconductor with increasing In concentration x. Furthermore, by introducing In alloying as an external knob of band gap engineering, we experimentally demonstrated the trivial topological nature of Bi2Se3 thin films (below 6 quintuple layers) as two-dimensional gapped systems, in consistent with our theoretical calculations. Our results provide not only a comprehensive phase diagram of (Bi1-xInx)2Se3 and a route to control its phase evolution, but also a practical way to experimentally determine the topological properties of a gapped compound by topological phase transition and band gap engineering.

cond-mat.mtrl-sci↗

arXiv2019

Real-space observation of charge ordering in epitaxial La2-xSrxCuO4 films

The cuprate superconductors exhibit ubiquitous instabilities toward charge-ordered states. These unusual electronic states break the spatial symmetries of the host crystal, and have been widely appreciated as essential ingredients for constructing a theory for high-temperature superconductivity in cuprates. Here we report real-space imaging of the doping-dependent charge orders in the epitaxial thin films of a canonical cuprate compound La2-xSrxCuO4 using scanning tunneling microscopy. As the films are moderately doped, we observe a crossover from incommensurate to commensurate (4a0, where a0 is the Cu-O-Cu distance) stripes. Furthermore, at lower and higher doping levels, the charge orders occur in the form of distorted Wigner crystal and grid phase of crossed vertical and horizontal stripes. We discuss how the charge orders are stabilized, and their interplay with superconductivity.

cond-mat.supr-con↗

arXiv2019

Disorder induced multifractal superconductivity in monolayer niobium dichalcogenides

The interplay between disorder and superconductivity is a subtle and fascinating phenomenon in quantum many body physics. The conventional superconductors are insensitive to dilute nonmagnetic impurities, known as the Anderson's theorem. Destruction of superconductivity and even superconductor-insulator transitions occur in the regime of strong disorder. Hence disorder-enhanced superconductivity is rare and has only been observed in some alloys or granular states. Because of the entanglement of various effects, the mechanism of enhancement is still under debate. Here we report well-controlled disorder effect in the recently discovered monolayer NbSe$_2$ superconductor. The superconducting transition temperatures of NbSe$_2$ monolayers are substantially increased by disorder. Realistic theoretical modeling shows that the unusual enhancement possibly arises from the multifractality of electron wave functions. This work provides the first experimental evidence of the multifractal superconducting state.

cond-mat.supr-con↗

arXiv2019

Insulating Parent Phase and Distinct Doping Evolution to Superconductivity in Single-Layer FeSe/SrTiO3 Films

The single-layer FeSe/SrTiO3 (FeSe/STO) films have attracted much attention because of their simple crystal structure, distinct electronic structure and record high superconducting transition temperature (Tc). The origin of the dramatic Tc enhancement in single-layer FeSe/STO films and the dichotomy of superconductivity between single-layer and multiple-layer FeSe/STO films are still under debate. Here we report a comprehensive high resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy measurements on the electronic structure evolution with doping in single-layer and multiple-layer FeSe/STO films. We find that the single-layer FeSe/STO films have a distinct parent phase and a route of doping evolution to superconductivity that are fundamentally different from multiple-layer FeSe/STO films. The parent phase of the single-layer FeSe/STO films is insulating, and its doping evolution is very similar to that of doping a Mott insulator in cuprate superconductors. In multiple-layer FeSe/STO films, high-Tc superconductivity occurs by suppressing the nematic order in the parent compound with electron doping. The single-layer FeSe/STO films represent the first clear case in the iron-based superconductors that the parent compound is an insulator. Our observations of the unique parent state and doping evolution in the single-layer FeSe/STO films provide key insight in understanding its record high-Tc superconductivity. They also provide a new route of realizing superconductivity in iron-based superconductors that is common in high temperature cuprate superconductors.

cond-mat.supr-con↗

arXiv2019

From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films

SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the high-symmetry rocksalt structure--in which its intrinsic electric dipole is quenched--this material develops metallic surface bands, but in its rhombic ground-state configuration--that hosts a non-zero spontaneous electric dipole--the crystalline symmetry is lowered and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 ALs are examined on freestanding samples, to which atomic layers were gradually added. 4 AL SnTe films are antiferroelectrically-coupled, while thicker freestanding SnTe films are ferroelectrically-coupled. The electronic band gap reduces its magnitude in going from 2 ALs to 40 ALs but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.

cond-mat.mes-hall↗