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Qingqing Sun

Publications and source records attributed to Qingqing Sun.

13 recordsLinked to original sources

FinRiskAtlas: Decision-Aligned Evaluation of Large Language Models for Financial Risk Review

Deploying large language models for professional financial review requires more than measuring general financial competence: models must perform the specific review operation required by a workflow and determine whether available evidence is sufficient for a defensible decision. Existing financial benchmarks cover knowledge, reasoning, compliance, and professional tasks, but their evaluation units are often organized around datasets or task formulations rather than the decisions that deployed systems support. We introduce FinRiskAtlas, a Chinese-language benchmark that evaluates financial LLMs along two complementary dimensions: operation execution under fixed evidence states and evidence-state control under evolving review conditions. The static benchmark contains 9,742 instances across 53 task families, including 42 Domain Knowledge families and eleven downstream review operations defined by explicit evaluation contracts. FinRisk-Ask extends this framework through offline replay of 680 pre-action states from 104 de-identified professional trajectories, withholding future evidence during inference and using it only to construct expert-verified evidence targets. Across 33 model configurations, operation-level evaluation yields non-redundant rankings (mean pairwise Spearman correlation 0.42 across downstream operations), and knowledge-based shortlisting can incur up to 18.01 points of regret on individual operations. FinRisk-Ask further shows that entering the Ask branch more frequently does not necessarily improve request targeting or end-to-end evidence acquisition. These results show that broad financial capability scores do not fully capture where models are reliable in professional workflows, motivating evaluation units aligned with the decisions and evidence states that deployed systems must support.

cs.AI

RiskWebWorld: A Realistic Interactive Benchmark for GUI Agents in E-commerce Risk Management

Graphical User Interface (GUI) agents show strong capabilities for automating web tasks, but existing interactive benchmarks primarily target benign, predictable consumer environments. Their effectiveness in high-stakes, investigative domains such as authentic e-commerce risk management remains underexplored. To bridge this gap, we present RiskWebWorld, the first highly realistic interactive benchmark for evaluating GUI agents in e-commerce risk management. RiskWebWorld features 1,513 tasks sourced from production risk-control pipelines across 8 core domains, and captures the authentic challenges of risk operations on uncooperative websites, partially environmental hijackments. To support scalable evaluation and agentic reinforcement learning (RL), we further build a Gymnasium-compliant infrastructure that decouples policy planning from environment mechanics. Our evaluation across diverse models reveals a dramatic capability gap: top-tier generalist models achieve 49.1% success, while specialized open-weights GUI models lag at near-total failure. This highlights that foundation model scale currently matters more than zero-shot interface grounding in long-horizon professional tasks. We also demonstrate the viability of our infrastructure through agentic RL, which improves open-source models by 16.2%. These results position RiskWebWorld as a practical testbed for developing robust digital workers.

cs.AI

RISK: A Framework for GUI Agents in E-commerce Risk Management

E-commerce risk management requires aggregating diverse, deeply embedded web data through multi-step, stateful interactions, which traditional scraping methods and most existing Graphical User Interface (GUI) agents cannot handle. These agents are typically limited to single-step tasks and lack the ability to manage dynamic, interactive content critical for effective risk assessment. To address this challenge, we introduce RISK, a novel framework designed to build and deploy GUI agents for this domain. RISK integrates three components: (1) RISK-Data, a dataset of 8,492 single-step and 2,386 multi-step interaction trajectories, collected through a high-fidelity browser framework and a meticulous data curation process; (2) RISK-Bench, a benchmark with 802 single-step and 320 multi-step trajectories across three difficulty levels for standardized evaluation; and (3) RISK-R1, a R1-style reinforcement fine-tuning framework considering four aspects: (i) Output Format Constraint, (ii) Single-step and (iii) Multi-step Level Reward, and (iv) Task Level Reweight. Experiments show that RISK-R1 achieves a 6.8% improvement in offline single-step and an 8.8% improvement in offline multi-step, using only 7.2% of the parameters of the SOTA baseline. Moreover, it attains a top task success rate of 70.5% in online evaluation. RISK provides a scalable, domain-specific solution for automating complex web interactions in e-commerce risk management. The code is available at https://github.com/RenqiChen/RISK-GUI.

cs.AI

Targeting Melanoma-Specific Tyrosinase: Cyclic Peptide Disrupts Actin Dynamics for Precision Apoptosis Induction

Melanoma is an aggressive and highly metastatic cancer that exhibits stubborn resistance to conventional therapies, highlighting the need for novel treatments. Existing therapeutic strategies often suffer from systemic toxicity, poor efficacy and fast-gained drug resistance. In this study, we designed a cyclic peptide system (c-RGDKYQ) that takes the advantage of the overexpression of tyrosinase in melanoma cells to trigger enzyme-mediated oxidation and self-assembly. The assembled peptide nanostructures can selectively disrupt the actin cytoskeleton, impairing cancer cellular functions, e.g., motility, adhesion, and proliferation, ultimately leading to apoptosis. This approach does not rely on external drug payloads or complex delivery mechanisms. c-RGDKYQ exhibits high selectivity for melanoma cells, strongly suppressing tumor growth in a murine model with minimal systemic toxicity. Our findings illuminate that, through targeting tyrosinase, c-RGDKYQ may be an enzyme-responsive alternative to conventional treatments for melanoma.

q-bio.BM

Crater-shaped Enrichment of $\mathrm{V}_\mathrm{Si}$ Color Centers in $4H$-SiC using Single-Pulse Near-Infrared Femtosecond Laser Processing

Currently, Si vacancy ($\mathrm{V}_\mathrm{Si}$) color centers in SiC are of significant interest due to their potential applications in quantum sensing and quantum communication. Meanwhile, the qualities of laser-induced color centers are well guaranteed. Femtosecond laser processing suffices for increasing the yield of $\mathrm{V}_\mathrm{Si}$ color centers in bulk materials and forms crater-shaped enriched regions on the surface. However, there is a notable absence of existing simulation methods to explain the mechanisms behind laser-assisted $\mathrm{V}_\mathrm{Si}$ color center generation. In this work, we design a three-dimensional molecular dynamics (3D-MD) model using an integral hemi-ellipsoidal shell mathematical model to simulate the interaction of Gaussian laser beams with bulk materials. Furthermore, we calculate the transmittance, absorption coefficient, refractive index, and reflectivity of $4H$-SiC. Then, the absorptance of a 1030 nm laser in 350 {\mu}m-thick $4H$-SiC material is abtained to simulate the energy loss during the actual processing. Finally, the study analyzes the movement trajectories of $\mathrm{V}_\mathrm{Si}$ color centers and explains the source of $\mathrm{V}_\mathrm{Si}$ on the surface. This analysis explains the reasons for the enrichment of color centers in the crater-shaped regions formed after laser deposition. Our work provides an effective 3D-MD modeling approach to study the processing mechanisms of laser interaction with semiconductor materials, offering insights into efficient $\mathrm{V}_\mathrm{Si}$ color center creation processes.

physics.optics

High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts

Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation was implemented for formation of FLP-free interfacial states by eliminating chemical disorder and crystal defects arising from metal deposition4-9. However, technical and principal challenges are still existing towards high-yield, wafer-scalable and low-cost integration of TFT devices. Herein, we developed a general, scaling-up strategy to fabricate large-scale, high-performance FLP-free organic TFT (OTFT) arrays by using printed vdW contacts consisting of MXene composite electrodes and 2, 7-dioctyl [1] benzothieno [3, 2-b] [1] benzothiophene (C8BTBT). Room-temperature processes allow for a physically stacked junction without any structural or chemical damages. The OTFT arrays can be printed on a large-area silicon wafer or plastic film with 100% yield, exhibit ultrahigh field-effect mobility ({\mu}_FE) over 17.0 square centimetres per volt per second (cm2 V-1s-1), high on/off ratio exceeding 108, relatively low contact resistance of 3k ohm micrometres. The underlying mechanism for the high device performance was unveiled by Kelvin Probe Force Microscopy (KPFM) combined with theoretical simulation. The results indicate that work function (W_F) of the printed electrodes can be tuned at a wide range of 4.8-5.6 eV, thus significantly lowering the charge-injection barrier at the contact interfaces with ideal FLP-free character (the interfacial factor reaches 0.99 \pm 0.02). This study paves a general strategy for achieving large-scale, high-performance thin-film electronics.

physics.app-ph

A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect

Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual-gated (DG) MoS2 phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top-gate voltage (VTG) and positive back-gate voltage (VBG) to the MoS2 channel, the photo-generated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ~1E5 A/W and detectivity (D*) of ~1E14 Jones have been achieved in several devices with different thickness under Pin of 53 uW/cm2 at VTG=-5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS2 DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. Our results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors.

physics.app-ph

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3E7 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.

physics.app-ph

Direct observation of Landau level resonance and mass generation in Dirac semimetal Cd3As2 thin films

Three-dimensional topological Dirac semimetals have hitherto stimulated unprecedented research interests as a new class of quantum materials. Breaking certain types of symmetries has been proposed to enable the manipulation of Dirac fermions; and that was soon realized by external modulations such as magnetic fields. However, an intrinsic manipulation of Dirac states, which is more efficient and desirable, remains a significant challenge. Here, we report a systematic study of quasi-particle dynamics and band evolution in Cd3As2 thin films with controlled Chromium (Cr) doping by both magneto-infrared spectroscopy and electrical transport. For the first time, we observe square-root-B relation of inter-Landau-level resonance in undoped Cd3As2 Dirac semimetal, an important signature of ultra-relativistic Dirac state inaccessible in previous optical experiments. A crossover from quantum to quasi-classical behavior makes it possible to directly probe the mass of Dirac fermions. Importantly, Cr doping allows for a Dirac mass acquisition and topological phase transition enabling a desired dynamic control of Dirac fermions. Corroborating with the density-functional theory calculations, we show that the mass generation is essentially driven by explicit C4 rotation symmetry breaking and the resultant Dirac gap engineering through Cr substitution for Cd atoms. The manipulation of the system symmetry and Dirac mass in Cd3As2 thin films provides a tuning knob to explore the exotic states stemming from the parent phase of Dirac semimetals.

cond-mat.mtrl-sci

Tunable charge-trap memory based on few-layer MoS2

Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their novel physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Owing to the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. More importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 104, far beyond Si-based flash memory, which allows for multi-bit information storage. Furthermore, the device shows a high mobility of 170 cm2V-1s-1, a good endurance of hundreds of cycles and a stable retention of ~28% charge loss after 10 years which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-\k charge-trap gate stacks opens up an exciting field of novel nonvolatile memory devices.

cond-mat.mtrl-sci

Noise and deviation effects in a bichromatic Raman white light cavity

We analyze the effects of noise and parameter deviations in a bichromatic Raman type white light cavity, with potential applications in precision measurements such as gravitational wave detection. The results show that the dispersion variation induced by parameter deviation can be controlled within $10^{-4}$. The laser phase noise decreases the dispersion magnitude while the amplitude noise increases it. Although we can always adjust the parameters to satisfy the white light condition, both noises make the cavity transmission curve uneven.

quant-ph

Entanglement criteria and nonlocality for multi-mode continuous variable systems

We demonstrate how to efficiently derive a broad class of inequalities for entanglement detection in multi-mode continuous variable systems. The separability conditions are established from partial transposition (PT) in combination with several distinct necessary conditions for a quantum physical state, which include previously established inequalities as special cases. Remarkably, our method enables us to support Peres' conjecture to its full generality within the framework of Cavalcanti-Foster-Reid-Drummond multipartite Bell inequality [Phys. Rev. Lett. 99}, 210405 (2007)] that the nonlocality necessarily implies negative PT entangled states.

quant-ph

Quantum coherence in a degenerate two-level atomic ensemble: for a transition $F_e=0\leftrightarrow F_g=1$

For a transition $F_e=0\leftrightarrow F_g=1$ driven by a linearly polarized light and probed by a circularly light, quantum coherence effects are investigated. Due to the coherence between the drive Rabi frequency and Zeeman splitting, electromagnetically induced transparency, electromagnetically induced absorption, and the transition from positive to negative dispersion are obtained, as well as the populations coherently oscillating in a wide spectral region. At the zero pump-probe detuning, the subluminal and superluminal light propagation is predicted. Finally, coherent population trapping states are not highly sensitive to the refraction and absorption in such ensemble.

quant-ph