arXiv subjects

Qinlin Guo

Publications and source records attributed to Qinlin Guo.

6 recordsLinked to original sources

arXiv2026

Writing and erasing skyrmions by single ultrafast laser pulses in monolayer Janus 2D magnets

Skyrmions in 2D magnets are promising candidates for nonvolatile, low-power, and high-density spintronic memories. However, their experimental realization at the 2D limit remains challenging, owing to the difficulty in engineering the required chiral magnetic interactions. Here, we report the creation and direct imaging of N\'eel-type skyrmions in Janus 2D chromium chalcogenides using synchrotron X-ray photoemission electron microscopy, and scanning nitrogen-vacancy magnetometry, which exhibit field-free stability, nonvolatility, and size tunability. First-principles calculations and micromagnetic simulations reveal that Janus-surface-induced inversion-symmetry breaking enhances the Dzyaloshinskii-Moriya interaction, providing the microscopic mechanism for skyrmion stabilization and tunability. We further achieve reversible skyrmion writing and erasing using a single ultrafast laser pulse in a magnetic field as low as 300 Oe, demonstrating the excellent manipulability of this 2D magnetic system. These results establish Janus engineering as a route to creating and manipulating nonvolatile skyrmions in atomically thin magnets, with implications for skyrmion-based low-power spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Selenium / Tellurium Two-Dimensional Structures: from Isovalent Se Dopants in Te to Atomically Thin Se Films

Two-dimensional (2D) elemental semiconductors have great potential for device applications, but their performance is limited by the lack of efficient doping methods. Here, combining molecular beam epitaxy, scanning tunneling microscopy/spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations, we investigate the evolution of the structural and electronic properties of 2D selenium/tellurium films with increased Se dosages on graphene/6H-SiC(0001) substrates. We found that Se atoms form isovalent dopants by replacing surface Te atoms, which introduces efficient electron doping and lowers the work function of Te films. With the Se dosage increasing, two types of elemental 2D crystalline Se structures, trigonal Se and Se8 molecular assembly films, are obtained on ultrathin Te films, which are distinct from the amorphous Se acquired by depositing Se directly on graphene/6H-SiC(0001). Our results shed light on tuning the electronic properties of 2D elemental semiconductors by isovalent doping and constructing heterostructures of isovalent 2D elemental materials.

cond-mat.mtrl-sci↗

arXiv2018

Reconstruction-Stabilized Epitaxy of LaCoO3/SrTiO3(111) Heterostructures by Pulsed Laser Deposition

Unlike widely explored complex oxide heterostructures grown along [001], the study of [111]-oriented heterointerfaces are very limited thus far. One of the main challenges is to overcome the polar discontinuity that hinders the epitaxy of atomically sharp interfaces. Here, by taking the LaCoO3/SrTiO3(111) as a prototype, we show that the reconstruction, which effectively compensates the surface polarity, can stabilize the epitaxy of the heterostructure with polar discontinuity. Reconstructed substrate surface is prepared, while the growth is controlled to form reconstruction on the film surface. To suppress the chemical diffusion across the interface, the growth is interrupted between each unit cell layer to allow the lattice relaxation at a lowered temperature. In this way, high quality two-dimensional growth is realized and the heterointerfaces exhibit sharpness at the atomic scale. Our work provides a path to precisely control the growth of complex oxide heterostructures along polar orientations that exhibit emergent quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2011

Reversible Transition Between Thermodynamically Stable Phases with Low Density of Oxygen Vacancies on SrTiO$_3$(110) Surface

The surface reconstruction of SrTiO$_3$(110) is studied with scanning tunneling microscopy and density functional theory (DFT) calculations. The reversible phase transition between (4$\times$1) and (5$\times$1) is controlled by adjusting the surface metal concentration [Sr] or [Ti]. Resolving the atomic structures of the surface, DFT calculations verify that the phase stability changes upon the chemical potential of Sr or Ti. Particularly, the density of oxygen vacancies is low on the thermodynamically stabilized SrTiO$_3$(110) surface.

cond-mat.mtrl-sci↗

arXiv2010

Evolution of the Surface Structures on SrTiO$_3$(110) Tuned by Ti or Sr Concentration

The surface structure of the SrTiO$_3$(110) polar surface is studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy. Monophased reconstructions in (5$\times$1), (4$\times$1), (2$\times$8), and (6$\times$8) are obtained, respectively, and the evolution between these phases can be tuned reversibly by adjusting the Ar$^{+}$ sputtering dose or the amount of Sr/Ti evaporation. Upon annealing, the surface reaches the thermodynamic equilibrium that is determined by the surface metal concentration. The different electronic structures and absorption behaviors of the surface with different reconstructions are investigated.

cond-mat.mtrl-sci↗

arXiv2009

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

We report the growth of atomically smooth, single crystalline Bi2Se3 thin films on Si(111) by using molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, X-ray photoelectron emission spectroscopy and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The film grows in a self-organized quintuple-layer by quintuple-layer mode, and atomically smooth film can be obtained with the thickness down to one quintuple-layer (~1nm).

cond-mat.mes-hall↗