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QuanSheng Wu

Publications and source records attributed to QuanSheng Wu.

At least 19 recordsLinked to original sources

Complex field-, temperature-, and angle-dependent Hall effects from intrinsic Fermi surface revealed by first-principles calculations

The Hall effect, ever intriguing since its discovery, has spurred the exploration of its phenomena, intensified by advances in topology and novel materials. Differentiating the ordinary Hall effect from extraordinary properties like the anomalous Hall effect (AHE) is challenging, especially in materials with topological origins. In our study, we leverage semiclassical Boltzmann transport theory and first-principles calculations within the relaxation time approximation to analyze Hall effects comprehensively. We have found that the complex magnetic field dependence of ordinary Hall effect, including the sign reversals, appearing of plateau and nonlinearity, can be understood and reproduced by our approach both for multiband models and realistic topological materials of ZrSiS and PtTe2. The Hall resistivity versus temperature and magnetic fields can be well scaled, similar to Kohler's rule for longitudinal resistivity. This methodology can also accurately model the angular dependent Hall effects such as planar Hall effects of bismuth. These findings indicate that the dependencies of various Hall effects and magnetoresistance on magnetic fields are mainly determined by the details of Fermi surface and the relaxation time. The intrinsic Fermi surface determines the carriers' density, type, and velocity, while the later is mostly influenced by extrinsic factors, such as quality of sample with defects, impurities, and domains. This insight might simplify the understanding of several seemingly complex transport phenomena in nonmagnetic materials, with no need for hypotheses of other sophisticated mechanisms, such as magnetization-induced AHE, Lifshitz transition-induced changes in carrier type, exotic orders like charge density wave, or some delicate scattering of carriers with chiral or nonreciprocal dependence. Finally, we also discussed the Hall effects contribute from the Berry curvature.

cond-mat.mtrl-sci

Unusual phase transition of layer-stacked borophene under pressure

The 8-Pmmn borophene, a boron analogue of graphene, hosts tilted and anisotropic massless Dirac fermion quasiparticles owing to the presence of the distorted graphene-like sublattice. First-principles calculations show that the stacked 8-Pmmn borophene is transformed into the fused three-dimensional borophene under pressure, being accompanied by the partially bond-breaking and bond-reforming. Strikingly, the fused 8-Pmmn borophene inherits the Dirac band dispersion resulting in an unusual semimetal-semimetal transition. A simple tight-binding model derived from graphene qualitatively reveals the underlying physics due to the maximum preservation of graphene-like substructure after the phase transition, which contrasts greatly to the transformation of graphite into diamond associated with the semimetal-insulator transition.

cond-mat.mtrl-sci

Crystal Field Effect and Electric Field Screening in Multilayer Graphene with and without Twist

We address the intrinsic polarisation and screening of external electric field in a broad range of ordered and twisted configurations of multilayer graphene, using an ab initio approach combining density functional theory and the Wannier function formalism. We show that multilayer graphene is intrinsically polarized due to the crystal field effect, an effect that is often neglected in tight-binding models of twisted bilayer graphene and similar systems. This intrinsic polarization of the order of up to few tens of meVs has different out-of-plane alignments in ordered and twisted graphene multilayers, while the in-plane potential modulation is found to be much stronger in twisted systems. We further investigate the dielectric permittivity $\varepsilon$ in same multilayer graphene configurations at different electric field strengths. Our findings establish a deep insight into intrinsic and extrinsic polarization in graphene multilayers and provide parameters necessary for building accurate models of these systems.

cond-mat.mes-hall

Unidirectional Kondo scattering in layered NbS2

Crystalline defects can modify quantum interactions in solids, causing unintuitive, even favourable, properties such as quantum Hall effect or superconducting vortex pinning. Here we present another example of this notion - an unexpected unidirectional Kondo scattering in single crystals of 2H-NbS2. This manifests as a pronounced low-temperature enhancement in the out-of-plane resistivity and thermopower below 40 K, hidden for the in-plane charge transport. The anomaly can be suppressed by the c-axis-oriented magnetic field, but is unaffected by field applied along the planes. The magnetic moments originate from layers of 1T-NbS2, which inevitably form during the growth, undergoing a charge-density-wave reconstruction with each superlattice cell (David-star-shaped cluster of Nb atoms) hosting a localised spin. Our results demonstrate the unique and highly anisotropic response of a spontaneously formed Kondo lattice heterostructure, intercalated in a layered conductor.

cond-mat.str-el

Extremely large magnetoresistance in the "ordinary" metal ReO3

The extremely large magnetoresistance (XMR) observed in many topologically nontrivial and trivial semimetals has attracted much attention in relation to its underlying physical mechanism. In this paper, by combining the band structure and Fermi surface (FS) calculations with the Hall resistivity and de Haas-Van Alphen (dHvA) oscillation measurements, we studied the anisotropy of magnetoresistance (MR) of ReO$_3$ with a simple cubic structure, an "ordinary" nonmagnetic metal considered previously. We found that ReO$_3$ exhibits almost all the characteristics of XMR semimetals: the nearly quadratic field dependence of MR, a field-induced upturn in resistivity followed by a plateau at low temperatures, high mobilities of charge carriers. It was found that for magnetic field \emph{H} applied along the \emph{c} axis, the MR exhibits an unsaturated \emph{H}$^{1.75}$ dependence, which was argued to arise from the complete carrier compensation supported by the Hall resistivity measurements. For \emph{H} applied along the direction of 15$^\circ$ relative to the \emph{c} axis, an unsaturated \emph{H}$^{1.90}$ dependence of MR up to 9.43~$\times$~$10^3$$\%$ at 10~K and 9~T was observed, which was explained by the existence of electron open orbits extending along the $k_{x}$ direction. Two mechanisms responsible for XMR observed usually in the semimetals occur also in the simple metal ReO$_3$ due to its peculiar FS (two closed electron pockets and one open electron pocket), once again indicating that the details of FS topology are a key factor for the observed XMR in materials.

cond-mat.str-el

Non-Abelian reciprocal braiding of Weyl points and its manifestation in $\textrm{ZrTe}$

Weyl semimetals in three-dimensional crystals provide the paradigm example of topologically protected band nodes. It is usually taken for granted that a pair of colliding Weyl points annihilate whenever they carry opposite chiral charge. In a stark contrast, here we report that Weyl points in systems symmetric under the composition of time-reversal with a $π$-rotation are characterized by a non-Abelian topological invariant. The topological charges of the Weyl points are transformed via braid phase factors which arise upon exchange inside symmetric planes of the reciprocal momentum space. We elucidate this process with an elementary two-dimensional tight-binding model implementable in cold-atoms setups and in photonic systems. In three dimensions, interplay of the non-Abelian topology with point-group symmetry is shown to enable topological phase transitions in which pairs of Weyl points may scatter or convert into nodal-line rings. By combining our theoretical arguments with first-principles calculations, we predict that Weyl points occurring near the Fermi level of zirconium telluride ($\textrm{ZrTe}$) carry non-trivial values of the non-Abelian charge, and that uniaxial compression strain drives a non-trivial conversion of the Weyl points into nodal lines.

cond-mat.mes-hall

The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

cond-mat.mes-hall

Chiral Decomposition of Twisted Graphene Multilayers with Arbitrary Stacking

We formulate the chiral decomposition rules that govern the electronic structure of a broad family of twisted $N+M$ multilayer graphene configurations that combine arbitrary stacking order and a mutual twist. We show that at the magic angle in the chiral limit the low-energy bands of such systems are composed of chiral pseudospin doublets which are energetically entangled with two flat bands per valley induced by the moiré superlattice potential. The analytic analysis is supported by explicit numerical calculations based on realistic parameterization. We further show that applying vertical displacement fields can open up energy gaps between the pseudospin doublets and the two flat bands, such that the flat bands may carry nonzero valley Chern numbers. These results provide guidelines for the rational design of various topological and correlated states in generic twisted graphene multilayers.

cond-mat.mes-hall

Linear and quadratic magnetoresistance in the semimetal SiP2

Multiple mechanisms for extremely large magnetoresistance (XMR) found in many topologically nontrivial/trivial semimetals have been theoretically proposed, but experimentally it is unclear which mechanism is responsible in a particular sample. In this article, by the combination of band structure calculations, numerical simulations of magnetoresistance (MR), Hall resistivity and de Haas-van Alphen (dHvA) oscillation measurements, we studied the MR anisotropy of SiP$_{2}$ which is verified to be a topologically trivial, incomplete compensation semimetal. It was found that as magnetic field, $H$, is applied along the $a$ axis, the MR exhibits an unsaturated nearly linear $H$ dependence, which was argued to arise from incomplete carriers compensation. For the $H$ $\parallel$ [101] orientation, an unsaturated nearly quadratic $H$ dependence of MR up to 5.88 $\times$ 10$^{4}$$\%$ (at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the $k_{x}$ direction. Good agreement of the experimental results with the simulations based on the calculated Fermi surface (FS) indicates that the topology of FS plays an important role in its MR.

cond-mat.mtrl-sci

Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2

We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity rhoxx(T,H), Hall resistivity rhoxy(T,H) and quantum oscillations of the magnetization as a function of temperature at various magnetic fields for MoO2 with monoclinic crystal structure. The band structure calculations show that MoO2 is a nodal-line semimetal when spin-orbit coupling is ignored. It was found that a large magnetoresistance reaching 5.03x10^4% at 2 K and 9 T, its nearly quadratic field dependence and a field-induced up-turn behavior of rhoxx(T), the characteristics common for many topologically non-trivial as well as trivial semimetals, emerge also in MoO2. The observed properties are attributed to a perfect charge-carrier compensation, evidenced by both calculations relying on the Fermi surface topology and the Hall resistivity measurements. Both the observation of negative magnetoresistance for magnetic field along the current direction and the non-zero Berry phase in de Haas-van Alphen measurements indicate that pairs of Weyl points appear in MoO2, which may be due to the crystal symmetry breaking. These results highlight MoO2 as a new platform materials for studying the topological properties of oxides.

cond-mat.mtrl-sci

Landau Levels as a Probe for Band Topology in Graphene Moiré Superlattices

We propose Landau levels as a probe for the topological character of electronic bands in two-dimensional moiré superlattices. We consider two configurations of twisted double bilayer graphene (TDBG) that have very similar band structures, but show different valley Chern numbers of the flat bands. These differences between the AB-AB and AB-BA configurations of TDBG clearly manifest as different Landau level sequences in the Hofstadter butterfly spectra calculated using the tight-binding model. The Landau level sequences are explained from the point of view of the distribution of orbital magnetization in momentum space that is governed by the rotational $C_2$ and time-reversal $\mathcal{T}$ symmetries. Our results can be readily extended to other twisted graphene multilayers and $h$-BN/graphene heterostructures thus establishing the Hofstadter butterfly spectra as a powerful tool for detecting the non-trivial valley band topology.

cond-mat.mes-hall

Correlated states in twisted double bilayer graphene

Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle. For bilayer graphene where the two layers are twisted by a "magic angle", flat band and strong many-body effects lead to correlated insulating states and superconductivity. In contrast to monolayer graphene, the band structure of untwisted bilayer graphene can be further tuned by a displacement field, providing an extra degree of freedom to control the flat band that should appear when two bilayers are stacked on top of each other. Here, we report the discovery and characterization of such displacement-field tunable electronic phases in twisted double bilayer graphene. We observe insulating states at a half-filled conduction band in an intermediate range of displacement fields. Furthermore, the resistance gap in the correlated insulator increases with respect to the in-plane magnetic fields and we find that the g factor according to spin Zeeman effect is ~2, indicating spin polarization at half filling. These results establish the twisted double bilayer graphene as an easily tunable platform for exploring quantum many-body states.

cond-mat.supr-con

Artificial Neural Network Approach to the Analytic Continuation Problem

Inverse problems are encountered in many domains of physics, with analytic continuation of the imaginary Green's function into the real frequency domain being a particularly important example. However, the analytic continuation problem is ill defined and currently no analytic transformation for solving it is known. We present a general framework for building an artificial neural network (ANN) that solves this task with a supervised learning approach. Application of the ANN approach to quantum Monte Carlo calculations and simulated Green's function data demonstrates its high accuracy. By comparing with the commonly used maximum entropy approach, we show that our method can reach the same level of accuracy for low-noise input data, while performing significantly better when the noise strength increases. The computational cost of the proposed neural network approach is reduced by almost three orders of magnitude compared to the maximum entropy method

physics.comp-ph

Non-Abelian band topology in noninteracting metals

Electron energy bands of crystalline solids generically exhibit degeneracies called band-structure nodes. Here, we introduce non-Abelian topological charges that characterize line nodes inside the momentum space of crystalline metals with space-time inversion ($\mathcal{PT}$) symmetry and with weak spinorbit coupling. We show that these are quaternion charges, similar to those describing disclinations in biaxial nematics. Starting from two-band considerations, we develop the complete many-band description of nodes in the presence of $\mathcal{PT}$ and mirror symmetries, which allows us to investigate the topological stability of nodal chains in metals. The non-Abelian charges put strict constraints on the possible nodal-line configurations. Our analysis goes beyond the standard approach to band topology and implies the existence of one-dimensional topological phases not present in existing classifications.

cond-mat.mes-hall

Moiré Flat Bands in Twisted Double Bilayer Graphene

We investigate twisted double bilayer graphene (TDBG), a four-layer system composed of two AB-stacked graphene bilayers rotated with respect to each other by a small angle. Our ab initio band structure calculations reveal a considerable energy gap at the charge point neutrality that we assign to the intrinsic symmetric polarization (ISP). We then introduce the ISP effect into the tight-binding parameterization and perform calculations on TDBG models that include lattice relaxation effects down to very small twist angles. We identify a narrow region around the magic angle $θ^\circ = 1.3^{\circ}$ characterized by a manifold of remarkably flat bands gapped out from other states even without external electric fields. To understand the fundamental origin of the magic angle in TDBG, we construct a continuum model that points to a hidden mathematical link to the twisted bilayer graphene (TBG) model, thus indicating that the band flattening is a fundamental feature of TDBG, and is not a result of external fields.

cond-mat.mes-hall

Automated construction of symmetrized Wannier-like tight-binding models from ab initio calculations

Wannier tight-binding models are effective models constructed from first-principles calculations. As such, they bridge a gap between the accuracy of first-principles calculations and the computational simplicity of effective models. In this work, we extend the existing methodology of creating Wannier tight-binding models from first-principles calculations by introducing the symmetrization post-processing step, which enables the production of Wannier-like models that respect the symmetries of the considered crystal. Furthermore, we implement automatic workflows, which allow for producing a large number of tight-binding models for large classes of chemically and structurally similar compounds, or materials subject to external influence such as strain. As a particular illustration, these workflows are applied to strained III-V semiconductor materials. These results can be used for further study of topological phase transitions in III-V quantum wells.

cond-mat.mtrl-sci

MgTa2N3: A new reference Dirac semimetal

We present a prediction of the Dirac semimetal (DSM) phase in MgTa2N3 based on first-principles calculations and symmetry analysis. In this material, the Fermi level is located exactly at the Dirac point without additional Fermi surface pockets. The band inversion associated with the Dirac cone involves the d orbitals of two structurally inequivalent Ta atoms with octahedral and trigonal prismatic coordination spheres. We further show that the lattice symmetry breaking can realize topological phase transitions from the DSM phase to a triple nodal point semimetal, Weyl semimetal or topological insulator. The topologically protected surface states and the non-protected Fermi arc surface states are also studied.

cond-mat.mtrl-sci

Topological Thermoelectricity in Metals

Recently published discoveries of acoustic and optical mode inversion in the phonon spectrum of certain metals became the first realistic example of non-interacting topological bosonic excitations in existing materials. However, the observable physical and technological use of such topological phonon phases remained unclear. In this work we provide a strong theoretical and numerical evidence that for a class of metallic compounds (known as triple point topological metals), the points in the phonon spectrum, at which three (two optical and one acoustic) phonon modes (bands) cross, represent a well-defined topological material phase, in which the hosting metals have very strong thermoelectric response. The triple point bosonic collective excitations appearing due to these topological phonon band-crossing points significantly suppress the lattice thermal conductivity, making such metals phonon-glass like. At the same time, the topological triple-point and Weyl fermionic quasiparticle excitations present in these metals yield good electrical transport (electron-crystal) and cause a local enhancement in the electronic density of states near the Fermi level, which considerably improves the thermopower. This combination of "phonon-glass" and "electron-crystal" is the key for high thermoelectric performance in metals. We call these materials topological thermoelectric metals and propose several newly predicted compounds for this phase (TaSb and TaBi). We hope that this work will lead researchers in physics and materials science to the detailed study of topological phonon phases in electronic materials, and the possibility of these phases to introduce novel and more efficient use of thermoelectric materials in many everyday technological applications.

cond-mat.mtrl-sci