arXiv subjects

Rüdiger Schott

Publications and source records attributed to Rüdiger Schott.

At least 19 recordsLinked to original sources

arXiv2026

Atomic-scale composition of the ternary III-V semiconductor (Al,Ga)Sb visualized by cross-sectional scanning tunneling microscopy

Cross-sectional scanning tunneling microscopy at 5 K is used to investigate cation mixing in (Al,Ga)Sb layers grown by molecular beam epitaxy, via direct atom counting at the (1-10) and (110) cleavage planes. Electronic contrast between Al and Ga surface cations enables statistical analysis of the metal sublattice along the non-equivalent <110> directions within the zincblende (001) surface and along the [001] growth direction. The cation distribution is found to be random both along the growth direction and within the growth plane, with no evidence of long-range order or anisotropic growth kinetics; notably, the mean numbers of consecutive cations of the same type along the two in-plane directions are equal, possibly due to statistical averaging over randomly distributed subsurface cations. The results are compatible with either strain-mediated interactions during cation incorporation at the growth front or ideal, uncorrelated cation mixing. Overall, the examined (Al,Ga)Sb alloy shows an exceptionally high degree of atomic-level homogeneity.

cond-mat.mtrl-sci↗

arXiv2025

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Next-generation scalable quantum photonic technologies operating at the single photon level rely on bringing together optimized quantum building blocks with minimal optical coupling losses. Achieving this necessitates the heterogeneous integration of different elements onto a single interposer chip. Integrated quantum emitters are key enablers for generating single photons, inducing quantum nonlinearities, and producing entanglement. In this work, we demonstrate the scalable integration of mature InGaAs quantum dots embedded in GaAs waveguides onto a low-loss SiN photonic platform, as evidenced by a high processing yield of 94.7% using a commercially available micro-transfer printing tool. These integrated emitters are embedded within a p-i-n heterostructure that allows for noise suppression, near-blinking-free operation and wavelength tunability upon CMOS-level electrical biasing. With this, we pave the way for scalable integration of diverse quantum photonic devices on a single chip.

physics.optics↗

arXiv2025

An InAsSb surface quantum well with in-situ deposited Nb as a platform for semiconductor-superconductor hybrid devices

We present a novel semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown InAsSb surface quantum well with an in-situ deposited Nb top layer. Relative to conventional Al-InAs based systems, the InAsSb surface quantum well offers a lower effective mass and stronger spin-orbit interaction, while the Nb layer has a higher critical temperature and a larger critical magnetic field. The in-situ deposition of the Nb results in a high-quality interface that enables strong coupling to the InAsSb quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV. Furthermore, a planar asymmetric SQUID is realized, exhibiting gate-tunable superimposed oscillations originating from both the individual Josephson junction and the full SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for experiments exploring gate-tunable superconductivity and topological superconducting devices.

cond-mat.supr-con↗

arXiv2025

Electrical control of quantum dots in GaAs-on-insulator waveguides for coherent single-photon generation

The integration of coherent quantum emitters with silicon photonic platforms essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO2/Si substrate and coupled to low-loss SiN waveguides. Our approach uses a die-to-die adhesive bonding process to realize a GaAs-on-insulator platform incorporating a p-i-n junction for charge noise suppression and Stark tuning of excitonic transitions. Resonance fluorescence measurements reveal narrow optical linewidths below 2 μeV and high single-photon purity, matching the performance of unprocessed GaAs devices. These results establish a practical route to integrate high-coherence quantum light sources with mature silicon photonics, enabling scalable quantum photonic integrated circuits

physics.optics↗

arXiv2025

Exploring the energy spectrum of a four-terminal Josephson junction: Towards topological Andreev band structures

Hybrid multiterminal Josephson junctions (JJs) are expected to harbor a novel class of Andreev bound states (ABSs), including topologically nontrivial states in four-terminal devices. In these systems, topological phases emerge when ABSs depend on at least three superconducting phase differences, resulting in a three-dimensional (3D) energy spectrum characterized by Weyl nodes at zero energy. Here, we realize a four-terminal JJ in a hybrid Al/InAs heterostructure, where ABSs form a synthetic 3D band structure. We probe the energy spectrum using tunneling spectroscopy and identify spectral features associated with the formation of a tri-Andreev molecule, a bound state whose energy depends on three superconducting phases and, therefore, is able to host topological ABSs. The experimental observations are well described by a numerical model. The calculations predict the appearance of four Weyl nodes at zero energy within a gap smaller than the experimental resolution. These topological states are theoretically predicted to remain stable within an extended region of the parameter space, well accessible by our device. These findings establish an experimental foundation to study high-dimensional synthetic band structures in multiterminal JJs, and to realize topological Andreev bands.

cond-mat.mes-hall↗

arXiv2024

Improving Electrical Contact Quality and Extraordinary Magnetoresistance in High Mobility III-V Semiconductors

Magnetometers based on the extraordinary magnetoresistance (EMR) effect are promising for applications which demand high sensitivity combined with room temperature operation but their application for magnetic field sensing requires further optimization. A key challenge is to obtain Ohmic metal/semiconductor contacts with low contact resistances in EMR devices comprising semiconductors with low carrier densities and high electron mobilities, yet, this topic remains scarcely investigated experimentally. By annealing high-mobility InSb in argon with systematically increasing temperatures, we experimentally demonstrate how the contact resistance to InSb films can be improved by two orders of magnitude by annealing to the micro-Ohm cm2 range without degrading the high mobility. We further show that lowering the contact resistance monotonously increases the room temperature magnetoresistance at 2 T from 700% to 65,000%. Lastly, we explore the origin of intrinsic magnetoresistance in high-mobility InSb thin films and suggest that it can best be explained by multiple band conduction.

physics.app-ph↗

arXiv2024

Realisation of a Coherent and Efficient One-Dimensional Atom

A quantum emitter interacting with photons in a single optical-mode constitutes a one-dimensional atom. A coherent and efficiently coupled one-dimensional atom provides a large nonlinearity, enabling photonic quantum gates. Achieving a high coupling efficiency ($β$-factor) and low dephasing is challenging. Here, we use a semiconductor quantum dot in an open microcavity as an implementation of a one-dimensional atom. With a weak laser input, we achieve an extinction of $99.2\%$ in transmission and a concomitant bunching in the photon statistics of $g^{(2)}(0) = 587$, showcasing the reflection of the single-photon component and the transmission of the multi-photon components of the coherent input. The tunable nature of the microcavity allows $β$ to be adjusted and gives control over the photon statistics -- from strong bunching to anti-bunching -- and the phase of the transmitted photons. We obtain excellent agreement between experiment and theory by going beyond the single-mode Jaynes-Cummings model. Our results pave the way towards the creation of exotic photonic states and two-photon phase gates.

quant-ph↗

arXiv2024

Development of a Nb-based semiconductor-superconductor hybrid platform

Semiconductor-superconductor hybrid materials are used as a platform to realise Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realised by in-situ deposition of an Al superconducting layer. Here we present a hybrid material based on an InAs two-dimensional electron gas (2DEG) combined with in-situ deposited Nb and NbTi superconductors, which offer a larger operating range in temperature and magnetic field due to their larger superconducting gap. We overcome the inherent difficulty associated with the formation of an amorphous interface between III-V semiconductors and Nb-based superconductors by introducing a 7 nm Al interlayer. The Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs 2DEG. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor-semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms.

cond-mat.supr-con↗

arXiv2023

Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy

We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around $9 \textrm{K}$. and critical perpendicular magnetic fields of up to $B_{c2} = 1.4 \textrm{T}$ at $4.2 \textrm{K}$. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex-situ and in-situ deposited material.

cond-mat.mtrl-sci↗

arXiv2023

Cavity-enhanced excitation of a quantum dot in the picosecond regime

A major challenge in generating single photons with a single emitter is to excite the emitter while avoiding laser leakage into the collection path. Ideally, any scheme to suppress this leakage should not result in a loss in efficiency of the single-photon source. Here, we investigate a scheme in which a single emitter, a semiconductor quantum dot, is embedded in a microcavity. The scheme exploits the splitting of the cavity mode into two orthogonally-polarised modes: one mode is used for excitation, the other for collection. By linking experiment to theory, we show that the best population inversion is achieved with a laser pulse detuned from the quantum emitter. The Rabi oscillations have an unusual dependence on pulse power. Our theory describes them quantitatively allowing us to determine the absolute photon creation probability. For the optimal laser detuning, the population innversion is 98\%. The Rabi oscillations depend on the sign of the laser-pulse detuning. We show that this arises from the non-trivial effect of phonons on the exciton dynamics. The exciton-phonon interaction is included in the theory and gives excellent agreement with all the experimental results.

quant-ph↗

arXiv2022

Cavity-enhanced single-shot readout of a quantum dot spin within 3 nanoseconds

Rapid, high-fidelity single-shot readout of quantum states is a ubiquitous requirement in quantum information technologies, playing a crucial role in quantum computation, quantum error correction, and fundamental tests of non-locality. Readout of the spin state of an optically active emitter can be achieved by driving a spin-preserving optical transition and detecting the emitted photons. The speed and fidelity of this approach is typically limited by a combination of low photon collection rates and measurement back-action. Here, we demonstrate single-shot optical readout of a semiconductor quantum dot spin state, achieving a readout time of only a few nanoseconds. In our approach, gated semiconductor quantum dots are embedded in an open microcavity. The Purcell enhancement generated by the microcavity increases the photon creation rate from one spin state but not from the other, as well as efficiently channelling the photons into a well-defined detection mode. We achieve single-shot readout of an electron spin state in 3 nanoseconds with a fidelity of (95.2$\pm$0.7)%, and observe quantum jumps using repeated single-shot measurements. Owing to the speed of our readout, errors resulting from measurement-induced back-action have minimal impact. Our work reduces the spin readout-time to values well below both the achievable spin relaxation and dephasing times in semiconductor quantum dots, opening up new possibilities for their use in quantum technologies.

quant-ph↗

arXiv2022

Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

cond-mat.mes-hall↗

arXiv2022

Direct observation of photon bound states using a single artificial atom

The interaction between photons and a single two-level atom constitutes a fundamental paradigm in quantum physics. The nonlinearity provided by the atom means that the light-matter interaction depends strongly on the number of photons interacting with the two-level system within its emission lifetime. This nonlinearity results in the unveiling of strongly correlated quasi-particles known as photon bound states, giving rise to key physical processes such as stimulated emission and soliton propagation. While signatures consistent with the existence of photon bound states have been measured in strongly interacting Rydberg gases, their hallmark excitation-number-dependent dispersion and propagation velocity have not yet been observed. Here, we report the direct observation of a photon-number-dependent time delay in the scattering off a single semiconductor quantum dot coupled to an optical cavity. By scattering a weak coherent pulse off the cavity-QED system and measuring the time-dependent output power and correlation functions, we show that single photons, and two- and three-photon bound states incur different time delays of 144.02\,ps, 66.45\,ps and 45.51\,ps respectively. The reduced time delay of the two-photon bound state is a fingerprint of the celebrated example of stimulated emission, where the arrival of two photons within the lifetime of an emitter causes one photon to stimulate the emission of the other from the atom.

quant-ph↗

arXiv2022

Formation of tungsten carbide by focused ion beam process: A route to high magnetic field resilient patterned superconducting nanostructures

A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interesting from fundamental and technological perspectives. This may be a potential indicator of triplet superconductivity, Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) pairing and other mechanisms involving topological aspects of surface states, and also allow Cooper pair injection at high magnetic fields. We have analysed the microscopic composition of such a material arising from an unexpected source. A microjet of an organo-metallic gas, $\rm {W[(CO)_6]}$ can be decomposed by gallium ion-beam, leaving behind a track of complex residue of gallium, tungsten and carbon with remarkable superconducting properties, like an upper critical field, $H_{c2} > 10~{\rm T} $, above its paramagnetic limit. We carried out Atomic probe tomography to establish the formation of nano-crystalline tungsten carbide (WC) in the tracks and the absence of free tungsten. Supporting calculations show for Ga distributed on the surface of WC, its s,p-orbitals enhance the density of states near the Fermi energy. The observed variation of $H_{c2}(T)$ does not show features typical of enhancement of critical field due to granularity. Our observations may be significant in the context of some recent theoretical calculation of the band structure of WC and experimental observation of superconductivity in WC-metal interface.

cond-mat.supr-con↗

arXiv2022

On-demand source of dual-rail photon pairs based on chiral interaction in a nanophotonic waveguide

Entanglement is the fuel of advanced quantum technology. It is for instance consumed in measurement-based quantum computing and allows loss-tolerant encoding of quantum information. In photonics, entanglement has traditionally been generated probabilistically, requiring massive multiplexing for scaling up to many photons. An alternative approach utilizes quantum emitters in nanophotonic devices for deterministic generation of single photons, which an be extended to two- and multi-photon generation on demand. The proposed polarization-entanglement sources are, however, incompatible with spatial dual-rail qubit encoding, which is preferred in photonic quantum computing realized in scalable integrated photonic circuits. Here we propose and experimentally realize an on-demand source of dual-rail photon pairs using a quantum dot in a planar nanophotonic waveguide. The source exploits the cascaded decay of a biexciton state and chiral light-matter coupling to achieve deterministic generation of spatial dual-rail Bell pairs with the amount of entanglement determined by the chirality. The operational principle can readily be extended to multi-photon entanglement generation, and such sources may be interfaced with advanced photonic-integrated circuits, e.g., for efficient preparation of entanglement resource states for photonic quantum computing.

quant-ph↗

arXiv2021

High-quality Two-Dimensional Electron Gas in Undoped InSb Quantum Wells

We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobility of 260,000 cm$^2$/Vs at a rather low density of $2.4\times10^{11}$ cm$^{-2}$. Using magneto-transport experiments, we characterize spin-orbit interactions by measuring weak antilocalization. Furthermore, by measuring Shubnikov-de Haas oscillations in tilted magnetic fields, we find that the g-factor agrees with $k \cdot p$ theory calculations at low magnetic fields but grows with spin polarization and carrier density at high magnetic fields. Additionally, signatures of Ising quantum Hall ferromagnetism are found at filling factor $ν$ = 2 for tilt angles where the Landau level energy equals the Zeeman energy. Despite the high mobility, the undoped InSb quantum wells exhibit no fractional quantum Hall effect up to magnetic fields of 25 T.

cond-mat.mes-hall↗

arXiv2021

A chiral one-dimensional atom using a quantum dot in an open microcavity

In nanostructures, the light-matter interaction can be engineered to be chiral. In the fully quantum regime, a chiral one-dimensional atom, a photon propagating in one direction interacts with the atom; a photon propagating in the other direction does not. Chiral quantum optics has applications in creating nanoscopic single-photon routers, circulators, phase-shifters and two-photon gates. Furthermore, the directional photon-exchange between many emitters in a chiral system may enable the creation of highly exotic quantum states. Here, we present a new way of implementing chiral quantum optics $-$ we use a low-noise quantum dot in an open microcavity. Specifically, we demonstrate the non-reciprocal absorption of single photons, a single-photon diode. The non-reciprocity, the ratio of the transmission in the forward-direction to the transmission in the reverse direction, is as high as 10.7 dB, and is optimised $\textit{in situ}$ by tuning the photon-emitter coupling to the optimal operating condition ($β= 0.5$). Proof that the non-reciprocity arises from a single quantum emitter lies in the nonlinearity with increasing input laser power, and in the photon statistics $-$ ultralow-power laser light propagating in the diode's reverse direction results in a highly bunched output ($g^{(2)}(0) = 101$), showing that the single-photon component is largely removed. The results pave the way to a single-photon phase shifter, and, by exploiting a quantum dot spin, to two-photon gates and quantum non-demolition single-photon detectors.

quant-ph↗

arXiv2021

Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress

A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results.

physics.optics↗