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arXiv · 2102.09327

Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress

Natasha Tomm·Alexander R. Korsch·Alisa Javadi·Daniel Najer·Rüdiger Schott·Sascha R. Valentin·Andreas D. Wieck·Arne Ludwig·Richard J. Warburton
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Abstract

A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results.

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Natasha Tomm, Alexander R. Korsch, Alisa Javadi, Daniel Najer, Rüdiger Schott, Sascha R. Valentin, Andreas D. Wieck, Arne Ludwig, Richard J. Warburton. 2021-02-18. Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress. https://doi.org/10.1103/physrevapplied.15.054061

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