arXiv subjects

R. E. Butera

Publications and source records attributed to R. E. Butera.

13 recordsLinked to original sources

arXiv2026

Multiple Andreev Reflection Effects in Asymmetric STM Josephson Junctions

We have examined the electrical behavior of Josephson junctions formed by a scanning tunneling microscope (STM) with a Nb sample and a Nb tip, with normal-state resistances Rn varying between 1 kOhm and 10 MOhm. Current-voltage characteristics were obtained as a function of Rn by varying the distance between the tip and sample at temperatures of 50 mK and 1.5 K. Rn decreases as the tip-sample separation is reduced, and the junction evolves from a phase-diffusion regime to an underdamped small junction regime, and then to a point contact regime. The subgap structure exhibits pronounced multiple Andreev reflection (MAR) features whose amplitudes and onset energies depend sensitively on junction transparency and gap asymmetry. To interpret these spectra, we generalize the Averin-Bardas MAR theory to superconductors with unequal gap magnitudes, providing a quantitative model appropriate for asymmetric STM junctions. The resulting fits yield the superconducting gaps of the electrodes, barrier transparency, and number of conduction channels as a function of Rn. Combining this analysis with Josephson junction dynamics, we further account for the observed switching and retrapping currents and the finite resistance of the supercurrent branch. Our results demonstrate that incorporating intrinsic electrode asymmetry is essential for reliably extracting transport parameters in STM-based superconducting weak links.

cond-mat.supr-con↗

arXiv2025

Adding Radio Frequency Capabilities to a millikelvin Scanning Tunneling Microscope

We present a simple home made solution enabling in-situ RF reflectometry measurements with a millikelvin scanning tunneling microscope (mk-STM). The additions described below were made using RF best practices following similar detection schemes commonly employed in the quantum information science (QIS) community. Using a Niobium STM tip to form a superconductor-insulator-normal metal (SIN) tunnel junction, the evolution of coherence peaks at the SC-gap edge are carefully measured to characterize the RF losses and electron temperature. We further identify impedance matching as a crucial factor to achieve high sensitivity in the reflectometry by tuning the tip-sample capacitance as a function of approach distance. As a demonstration of this capability, we measure a 50x50 nm$^2$ area of island features that have been condensed onto the surface of a gold single crystal. Position dependent reflectometry losses allow us to image island sizes down to a total surface area of 5 nm$^2$ given our current sensitivity.

physics.ins-det↗

arXiv2021

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1

Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated precursor molecules: diborane (B$_2$H$_6$), boron trichloride (BCl$_3$), and aluminum trichloride in both monomer (AlCl$_3$) and dimer forms (Al$_2$Cl$_6$), to identify the acceptor precursor and dosing conditions most likely to yield deterministic incorporation. While all three precursors can achieve single-acceptor incorporation, we predict that diborane is unlikely to achieve deterministic incorporation, boron trichloride can achieve deterministic incorporation with modest heating (50 $^{\circ}$C), and aluminum trichloride can achieve deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices.

cond-mat.mes-hall↗

arXiv2021

Dopant Precursor Adsorption into Single-Dimer Windows: Towards Guided Self-Assembly of Dopant Arrays on Si(100)

Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arrays of single dopant atoms in lieu of lithographic patterning. We leverage the self-assembled c(4x2) structure formed on Br- and I-Si(100) and investigate molecular precursor adsorption into the generated array of single-dimer window (SDW) adsorption sites with density functional theory (DFT). The adsorption of several technologically relevant dopant precursors (PH$_3$, BCl$_3$, AlCl$_3$, GaCl$_3$) into SDWs formed with various resists (H, Cl, Br, I) are explored to identify the effects of steric interactions. PH$_3$ adsorbed without barrier on all resists studied, while BCl$_3$ exhibited the largest adsorption barrier, 0.34 eV, with an I resist. Dense arrays of AlCl$_3$ were found to form within experimentally realizable conditions demonstrating the potential for the proposed use of guided self-assembly for atomically precise fabrication of dopant-based devices.

cond-mat.mtrl-sci↗

arXiv2021

Area-selective deposition and B $δ$-doping of Si(100) with BCl$_{3}$

B-doped $δ$-layers were fabricated in Si(100) using BCl$_{3}$ as a dopant precursor in ultrahigh vacuum. BCl$_{3}$ adsorbed readily at room temperature, as revealed by scanning tunneling microscopy (STM) imaging. Annealing at elevated temperatures facilitated B incorporation into the Si substrate. Secondary ion mass spectrometry (SIMS) depth profiling demonstrated a peak B concentration $>$ 1.2(1) $\times$ 10$^{21}$ cm$^{-3}$ with a total areal dose of 1.85(1) $\times$ 10$^{14}$ cm$^{-2}$ resulting from a 30 L BCl$_{3}$ dose at 150 $^{\circ}$C. Hall bar measurements of a similar sample were performed at 3.0 K revealing a sheet resistance of $R_{\mathrm{s}}$ = 1.91 k$Ω\square^{-1}$, a hole concentration of $n$ = 1.90 $\times$ 10$^{14}$ cm$^{-2}$ and a hole mobility of $μ$ = 38.0 cm$^{2}$V$^{-1}$s$^{-1}$ without performing an incorporation anneal. Further, the conductivity of several B-doped $δ$-layers showed a log dependence on temperature suggestive of a two-dimensional system. Selective-area deposition of BCl$_{3}$ was also demonstrated using both H- and Cl-based monatomic resists. In comparison to a dosed area on bare Si, adsorption selectivity ratios for H and Cl resists were determined by SIMS to be 310(10):1 and 1529(5):1, respectively, further validating the use of BCl$_{3}$ as a dopant precursor for atomic precision fabrication of acceptor-doped devices in Si.

cond-mat.mtrl-sci↗

arXiv2021

AlCl$_{3}$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al

The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-doping techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl$_{3}$ readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing of the AlCl$_{3}$-dosed substrate at temperatures below 450 $^{\circ}$C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 $^{\circ}$C and above, and Cl desorption was observed for temperatures beyond 450 $^{\circ}$C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10$^{20}$ cm$^{-3}$ across a $\sim$2.7 nm thick $δ$-doped region. The Al concentration achieved here and the processing parameters utilized promote AlCl$_{3}$ as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing.

cond-mat.mtrl-sci↗

arXiv2020

Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy

Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi$_2$Se$_3$ samples by employing Fe-coated W tips as well as non-magnetic W tips. We observe a linear increase in the spin-accumulation as a function of bias current through TI samples.

cond-mat.mes-hall↗

arXiv2019

Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy

The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide ($Bi_2Se_3$) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of bias currents through $Bi_2Se_3$ samples has been observed. It is argued that this asymmetry is the manifestation of surface spin-polarized electron accumulation caused by the ninety-degree electron spin-momentum locking in the topologically protected surface current mode. It is demonstrated that the manifestation of surface spin-polarized electron accumulation is enhanced by tin doping of $Bi_2Se_3$ samples. Furthermore, the appearance of spin-dependent density of states in current carrying $Bi_2Se_3$ samples has also been observed.

cond-mat.mes-hall↗

arXiv2019

STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)

We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has previously focused on hydrogen-based chemistry for donor device fabrication. Here, to develop halogen-based chemistries for fabricating acceptor-based devices, we substituted the hydrogen resist with chlorine. Lithographic patterning was explored using both field emission patterning to desorb chlorine from large areas as well as atomic precision patterning to desorb chlorine along one to two dimer rows at a time. We varied the experimental parameters for lithographic patterning and found a positive correlation between pattern line widths and both sample bias voltage and total electron dose. Finally, the use of chlorine, bromine, and iodine as lithographic resists to broaden the range of available chemistries for future device fabrication utilizing halogen-based dopant precursors is discussed.

cond-mat.mes-hall↗

arXiv2018

Coulomb blockade regions in sputter-deposited titanium nitride films

We present topographic and spectroscopic scanning tunneling microscopy measurements taken on a 21 nm thick TiN film at a temperature of 4.2 K -- above the superconducting transition temperature (T_c = 3.8 K) of the sample. The film was polycrystalline with crystallite diameters of d~19 nm, consistent with other films prepared under similar conditions. The spectroscopic maps show on average a shallow V-shape around V_b = 0 V consistent with a sample near the Mott insulation transition. In selected regions on several samples we additionally observed signs of Coulomb blockade. The corresponding peak structures are typically asymmetric with respect to bias voltage indicating coupling to two very different tunneling barriers. Furthermore, the peak structures appear with constant peak-peak spacing which indicates quantum dot states within the Coulomb blockade island. In this paper we discuss one such Coulomb blockade area and its implications in detail.

cond-mat.mes-hall↗

arXiv2017

On local sensing of spin Hall effect in tungsten films by using STM-based measurements

The spin Hall effect in tungsten films has been experimentally studied by using STM-based measurements. These measurements have been performed by using tungsten and iron coated tungsten tips. In the case of tungsten tips, it has been observed that the current flow through the tungsten film results in an appreciable asymmetry in the tunneling current with respect to the change in the polarity of the tunneling voltage. It is reasoned that the cause of this asymmetry is the accumulation of spin polarized electrons on the tungsten film surface due to the spin Hall effect. This asymmetry is not affected by the change of the direction of the bias current through the film. However, in the case of iron coated tungsten tips, it has been observed that a change in the direction of the bias current does lead to an additional asymmetry in the tunneling current. It is thus experimentally demonstrated that this asymmetry is caused by the SHE and spin-dependent density of states of iron-coated tips.

cond-mat.mes-hall↗

arXiv2017

A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect

A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented and illustrated by experiments performed on current-carrying thin tungsten films. The obtained results demonstrate a sub-millivolt resolution in the measured surface potential. The application of this potentiometry technique to the local sensing of the spin Hall effect is outlined and some experimental results are reported.

cond-mat.mes-hall↗

arXiv2017

Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation sources. From a thermodynamic standpoint, multilayer growth pits are unexpected in relaxed homoepitaxial growth, whereas oxidation is a known cause for step pinning, roughening, and faceting on elemental surfaces, both with and without growth flux. Not surprisingly, pits are thermodynamically metastable and heal by annealing to recover a smooth periodic step arrangement. STM reveals new details about the pits' atomistic origins and growth dynamics. We give a model for heterogeneous nucleation of pits by preferential adsorption of Å-sized oxide nuclei at intrinsic growth antiphase boundaries, and subsequent step pinning and bunching around the nuclei.

cond-mat.mtrl-sci↗