arXiv subjects

R. Gross

Publications and source records attributed to R. Gross.

At least 91 records · Page 5Linked to original sources

arXiv2004

Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier

Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier showed reproducibly a tunneling magnetoresistance (TMR) effect at room temperature of up to 5% with almost ideal switching behavior. This number only partially reflects the intrinsic high spin polarization of Fe3O4. It is considerably decreased due to an additional series resistance within the junction. Only SiO2 and Al2O(3-x) barriers provide magnetically decoupled electrodes as necessary for sharp switching. The observed decrease of the TMR effect as a function of increasing temperature is due to a decrease in spin polarization and an increase in spin-scattering in the barrier. Among the oxide half-metals magnetite has the potential to enhance the performance of TMR based devices.

cond-mat.mtrl-sci↗

arXiv2004

Study of Magnetic Properties of A_2B^'NbO_6 (A=Ba,Sr, (BaSr): and B^'=Fe and Mn) double perovskites

We have studied the magnetic properties of Ba_2FeNbO_6 and Ba_2MnNbO_6. it is seen that Ba_2FeNbO_6 is an antiferromagnet with a weak ferromagnetic behaviour at 5K while Ba_2MnNbO_6 shows two magnetic transitions one at 45 K and the other at 12K. Electron spin resonance (ESR) measurements at room temperature show that the Mn compound does not show any Jahn-Teller distortion. It is also seen that the Neel temperature of the A_2FeNbO_6 (A=Ba,Sr, BaSr) compounds do not vary significantly. However variations in the average A-site ionic radius influence the formation of short range correlations that persist above T_N.

cond-mat.str-el↗

arXiv2004

Hall effect in Fe$_3$O$_4$ epitaxial thin films

Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.

cond-mat.mtrl-sci↗

arXiv2003

Structural and doping effects in the half-metallic double perovskite $A_2$CrWO$_6$

he structural, transport, magnetic and optical properties of the double perovskite $A_2$CrWO$_6$ with $A=\text{Sr, Ba, Ca}$ have been studied. By varying the alkaline earth ion on the $A$ site, the influence of steric effects on the Curie temperature $T_C$ and the saturation magnetization has been determined. A maximum $T_C=458$ K was found for Sr$_2$CrWO$_6$ having an almost undistorted perovskite structure with a tolerance factor $f\simeq 1$. For Ca$_2$CrWO$_6$ and Ba$_2$CrWO$_6$ structural changes result in a strong reduction of $T_C$. Our study strongly suggests that for the double perovskites in general an optimum $T_C$ is achieved only for $f \simeq 1$, that is, for an undistorted perovskite structure. Electron doping in Sr$_2$CrWO$_6$ by a partial substitution of Sr$^{2+}$ by La$^{3+}$ was found to reduce both $T_C$ and the saturation magnetization $M_s$. The reduction of $M_s$ could be attributed both to band structure effects and the Cr/W antisites induced by doping. Band structure calculations for Sr$_2$CrWO$_6$ predict an energy gap in the spin-up band, but a finite density of states for the spin-down band. The predictions of the band structure calculation are consistent with our optical measurements. Our experimental results support the presence of a kinetic energy driven mechanism in $A_2$CrWO$_6$, where ferromagnetism is stabilized by a hybridization of states of the nonmagnetic W-site positioned in between the high spin Cr-sites.

cond-mat.str-el↗

arXiv2003

Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

Epitaxy of oxide materials on silicon (Si) substrates is of great interest for future functional devices using the large variety of physical properties of the oxides as ferroelectricity, ferromagnetism, or superconductivity. Recently, materials with high spin polarization of the charge carriers have become interesting for semiconductor-oxide hybrid devices in spin electronics. Here, we report on pulsed laser deposition of magnetite (Fe3O4) on Si(001) substrates cleaned by an in situ laser beam high temperature treatment. After depositing a double buffer layer of titanium nitride (TiN) and magnesium oxide (MgO), a high quality epitaxial magnetite layer can be grown as verified by RHEED intensity oscillations and high resolution x-ray diffraction.

cond-mat.mtrl-sci↗

arXiv2002

Epitaxial growth and transport properties of Sr$_2$CrWO$_6$ thin films

We report on the preparation and characterization of epitaxial thin films of the double-perovskite Sr$_2$CrWO$_6$ by Pulsed Laser Deposition (PLD). On substrates with low lattice mismatch like SrTiO$_3$, epitaxial Sr$_2$CrWO$_6$ films with high crystalline quality can be grown in a molecular layer-by-layer growth mode. Due to the similar ionic radii of Cr and W, these elements show no sublattice order. Nevertheless, the measured Curie temperature is well above 400 K. Due to the reducing growth atmosphere required for double perovskites, the SrTiO$_3$ substrate surface undergoes an insulator-metal transition impeding the separation of thin film and substrate electric transport properties.

cond-mat.str-el↗

arXiv2002

Low frequency 1/f noise in doped manganite grain-boundary junctions

We have performed a systematic analysis of the low frequency 1/f-noise in single grain boundary junctions in the colossal magnetoresistance material La_{2/3}Ca_{1/3}MnO_{3-delta}. The grain boundary junctions were formed in epitaxial La_{2/3}Ca_{1/3}MnO_{3-delta} films deposited on SrTiO_3 bicrystal substrates and show a large tunneling magnetoresistance of up to 300% at 4.2 K as well as ideal, rectangular shaped resistance versus applied magnetic field curves. Below the Curie temperature T_C the measured 1/f noise is dominated by the grain boundary. The dependence of the noise on bias current, temperature and applied magnetic field gives clear evidence that the large amount of low frequency noise is caused by localized sites with fluctuating magnetic moments in a heavily disordered grain boundary region. At 4.2 K additional temporally unstable Lorentzian components show up in the noise spectra that are most likely caused by fluctuating clusters of interacting magnetic moments. Noise due to fluctuating domains in the junction electrodes is found to play no significant role.

cond-mat.str-el↗

arXiv2002

Sub-unit cell layer-by-layer growth of Fe3O4, MgO, and Sr2RuO4 thin films

The use of oxide materials in oxide electronics requires their controlled epitaxial growth. Recently, it was shown that Reflection High Energy Electron Diffraction (RHEED) allows to monitor the growth of oxide thin films even at high oxygen pressure. Here, we report the sub-unit cell molecular or block layer growth of the oxide materials Sr2RuO4, MgO, and magnetite using Pulsed Laser Deposition (PLD) from stoichiometric targets. Whereas for perovskites such as SrTiO3 or doped LaMnO3 a single RHEED intensity oscillation is found to correspond to the growth of a single unit cell, in materials where the unit cell is composed of several molecular layers or blocks with identical stoichiometry, a sub-unit cell molecular or block layer growth is established resulting in several RHEED intensity oscillations during the growth of a single unit-cell.

cond-mat.mtrl-sci↗

arXiv2002

Transport anisotropy in biaxially strained La(2/3)Ca(1/3)MnO(3) thin films

Due to the complex interplay of magnetic, structural, electronic, and orbital degrees of freedom, biaxial strain is known to play an essential role in the doped manganites. For coherently strained La(2/3)Ca(1/3)MnO(3) thin films grown on SrTiO(3) substrates, we measured the magnetotransport properties both parallel and perpendicular to the substrate and found an anomaly of the electrical transport properties. Whereas metallic behavior is found within the plane of biaxial strain, for transport perpendicular to this plane an insulating behavior and non-linear current-voltage characteristics (IVCs) are observed. The most natural explanation of this anisotropy is a strain induced transition from an orbitally disordered ferromagnetic state to an orbitally ordered state associated with antiferromagnetic stacking of ferromagnetic manganese oxide planes.

cond-mat.str-el↗

arXiv2001

Possible pseudogap behavior of electron doped high-temperature superconductors

We have measured the low-energy quasiparticle excitation spectrum of the electron doped high-temperature superconductors (HTS) Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y) as a function of temperature and applied magnetic field using tunneling spectroscopy. At zero magnetic field, for these optimum doped samples no excitation gap is observed in the tunneling spectra above the transition temperature Tc. In contrast, below Tc for applied magnetic fields well above the resistively determined upper critical field, a clear excitation gap at the Fermi level is found which is comparable to the superconducting energy gap below Tc. Possible interpretations of this observation are the existence of a normal state pseudogap in the electron doped HTS or the existence of a spatially non-uniform superconducting state.

cond-mat.supr-con↗

arXiv2001

Comparison of Josephson vortex flow transistors with different gate line configurations

We performed numerical simulations and experiments on Josephson vortex flow transistors based on parallel arrays of YBa2Cu3O(7-x) grain boundary junctions with a cross gate-line allowing to operate the same devices in two different modes named Josephson fluxon transistor (JFT) and Josephson fluxon-antifluxon transistor (JFAT). The simulations yield a general expression for the current gain vs. number of junctions and normalized loop inductance and predict higher current gain for the JFAT. The experiments are in good agreement with simulations and show improved coupling between gate line and junctions for the JFAT as compared to the JFT.

cond-mat.supr-con↗

arXiv2000

Transport and Noise Characteristics of Submicron High-Temperature Superconductor Grain-Boundary Junctions

We have investigated the transport and noise properties of submicron YBCO bicrystal grain-boundary junctions prepared using electron beam lithography. The junctions show an increased conductance for low voltages reminiscent of Josephson junctions having a barrier with high transmissivity. The voltage noise spectra are dominated by a few Lorentzian components. At low temperatures clear two-level random telegraph switching (RTS) signals are observable in the voltage vs time traces. We have investigated the temperature and voltage dependence of individual fluctuators both from statistical analysis of voltage vs time traces and from fits to noise spectra. A transition from tunneling to thermally activated behavior of individual fluctuators was clearly observed. The experimental results support the model of charge carrier traps in the barrier region.

cond-mat.supr-con↗

arXiv2000

Voltage-flux-characteristics of asymmetric dc SQUIDs

We present a detailed analysis of voltage-flux V(Phi)-characteristics for asymmetric dc SQUIDs with various kinds of asymmetries. For finite asymmetry alpha_I in the critical currents of the two Josephson junctions, the minima in the V(Phi)-characteristics for bias currents of opposite polarity are shifted along the flux axis by Delta_Phi = (alpha_I)*(beta_L) relative to each other; beta_L is the screening parameter. This simple relation allows the determination of alpha_I in our experiments on YBa_2Cu_3O_(7-x} dc SQUIDs and comparison with theory. Extensive numerical simulations within a wide range of beta_L and noise parameter Gamma reveal a systematic dependence of the transfer function V_Phi on alpha_I and alpha_R (junction resistance asymmetry). As for the symmetric dc SQUID, V_Phi factorizes into g(Gamma*beta_L)*f(alpha_I,beta_L), where now f also depends on alpha_I. For β_L below five we find mostly a decrease of V_Phi with increasing alpha_I, which however can only partially account for the frequently observed discrepancy in V_Phi between theory and experiment for high-T_c dc SQUIDs.

cond-mat.supr-con↗

arXiv2000

Large two-level magnetoresistance effect in doped manganite grain boundary junctions

We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to the grain boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain boundary interface.

cond-mat.str-el↗

arXiv2000

Ratchet effect in dc SQUIDs

We analyzed voltage rectification for dc SQUIDs biased with ac current with zero mean value. We demonstrate that the reflection symmetry in the 2-dimensional SQUID potential is broken by an applied flux and with appropriate asymmetries in the dc SQUID. Depending on the type of asymmetry, we obtain a rocking or a simultaneously rocking and flashing ratchet, the latter showing multiple sign reversals in the mean voltage with increasing amplitude of the ac current. Our experimental results are in agreement with numerical solutions of the Langevin equations for the asymmetric dc SQUID.

cond-mat↗

arXiv2000

Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR with increasing voltage scales with an increase of the inelastic tunneling current due to multi-step inelastic tunneling via localized defect states in the tunneling barrier. This behavior can be described within a three-current model for magnetic tunnel junctions that extends the two-current Julliere model by adding an inelastic, spin-independent tunneling contribution. Our analysis gives strong evidence that the observed drastic decrease of the GB-TMR in manganites is caused by an imperfect tunneling barrier.

cond-mat.str-el↗

arXiv1999

Anomalous Low Temperature Behavior of Superconducting Nd(1.85)Ce(0.15)CuO(4-y)

We have measured the temperature dependence of the in-plane London penetration depth lambda(T) and the maximum Josephson current Ic(T) using bicrystal grain boundary Josephson junctions of the electron-doped cuprate superconductor Nd(1.85)Ce(0.15)CuO(4-y). Both quantities reveal an anomalous temperature dependence below about 4 K. In contrast to the usual monotonous decrease (increase) of lambda(T) (Ic(T)) with decreasing temperature, lambda(T) and Ic(T) are found to increase and decrease, respectively, with decreasing temperature below 4 K resulting in a non-monotonous overall temperature dependence. This anomalous behavior was found to be absent in analogous measurements performed on Pr(1.85)Ce(0.15)CuO(4-y). From this we conclude that the anomalous behavior of Nd(1.85)Ce(0.15)CuO(4-y) is caused by the presence of the Nd3+ paramagnetic moments. Correcting the measured lambda(T) dependence of Nd(1.85)Ce(0.15)CuO(4-y) for the temperature dependent susceptibility due to the Nd moments, an exponential dependence is obtained indicating isotropic s-wave pairing. This result is fully consistent with the lambda(T) dependence measured for Pr(1.85)Ce(0.15)CuO(4-y).

cond-mat.supr-con↗

arXiv1999

Separation of Quasiparticle and Phononic Heat Currents in YBCO

Measurements of the transverse (k_{xy}) and longitudinal (k_{xx}) thermal conductivity in high magnetic fields are used to separate the quasiparticle thermal conductivity (k_{xx}^{el}) of the CuO_2-planes from the phononic thermal conductivity in YBa_2Cu_3O_{7-δ}. k_{xx}^{el} is found to display a pronounced maximum below T_c. Our data analysis reveals distinct transport (τ) and Hall (τ_H) relaxation times below T_c: Whereas τis strongly enhanced, τ_H follows the same temperature dependence as above T_c.

cond-mat.supr-con↗