arXiv subjects

R. I. Dzhioev

Publications and source records attributed to R. I. Dzhioev.

16 recordsLinked to original sources

arXiv2019

Step-like spectral distribution of photoelectrons at the percolation threshold in heavily $p$-doped GaAs

We study the origin of the step-like shoulder on the high energy side of the low temperature photoluminescence spectrum of heavily $p$-doped GaAs. We show experimentally that it is controlled by the Fermi-Dirac distribution of the holes and by the energy distribution of the photoexcited electrons showing a sharp step-like dependence. This step is attributed to the percolation threshold in the conduction band separating localized from delocalized electron states. A comprehensive set of optical techniques based on spin orientation of electrons, namely the Hanle effect, time- and polarization-resolved photoluminescence, as well as transient pump-probe Faraday rotation are used for these studies. We identify two different electron ensembles with substantially different spin lifetimes of 20 and 280~ps, limited by the lifetime of the electrons. Their spin relaxation times are longer than 2~ns. The relative contribution of short- and long-lived photoexcited electrons to the emission spectrum changes abruptly at the high-energy photoluminescence step-like tail. For energies above the percolation threshold the electron states are empty due to fast energy relaxation, while for lower energies the relaxation is suppressed and the majority of photoelectrons populate these states.

cond-mat.mes-hall↗

arXiv2018

Nuclear spin-lattice relaxation in p-type GaAs

Spin-lattice relaxation of the nuclear spin system in p-type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval of variable length. This method allows us to measure the spin-lattice relaxation time $T_1$ of optically pumped nuclei "in the dark", that is, in the absence of illumination. The measured $T_1$ values fall into the sub-second time range, being three orders of magnitude shorter than in earlier studied n-type GaAs. The drastic difference is further emphasized by magnetic-field and temperature dependences of $T_1$ in p-GaAs, showing no similarity to those in n-GaAs. This unexpected behavior is explained within a developed theoretical model involving quadrupole relaxation of nuclear spins, which is induced by electric fields within closely spaced donor-acceptor pairs.

cond-mat.other↗

arXiv2018

Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals

We demonstrate the optical orientation and alignment of excitons in a two-dimensional layer of CsPbI$_3$ perovskite nanocrystals prepared by colloidal synthesis and measure the anisotropic exchange splitting of exciton levels in the nanocrystals. From the experimental data at low temperature (2K), we obtain the average value of anisotropic splitting of bright exciton states of the order of 120μeV. Our calculations demonstrate that there is a significant contribution to the splitting due to the nanocrystal shape anisotropy for all inorganic perovskite nanocrystrals.

cond-mat.mes-hall↗

arXiv2017

High-efficiency optical pumping of nuclear polarization in a GaAs quantum well

The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a maximum nuclear field of 0.9 T in a tilted external magnetic field of 1 T strength only. This high efficiency is due to a low leakage of spin out of the polarized nuclear system, because mechanisms of spin relaxation other than the hyperfine interaction are strongly suppressed, leading to a long nuclear relaxation time of up to 1000 s. A key ingredient to that end is the low impurity concentration inside the heterostructure, while the electrostatic potential from charged impurities in the surrounding barriers becomes screened through illumination by which the spin relaxation time is increased compared to keeping the system in the dark. This finding indicates a strategy for obtaining high nuclear spin polarization as required for long-lasting carrier spin coherence.

cond-mat.mes-hall↗

arXiv2016

Nuclear spin relaxation in n-GaAs: from insulating to metallic regime

Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are localized, nuclear spin relaxation is strongly enhanced at low magnetic field. The origin of this effect could reside in the quadrupole interaction between nuclei and fluctuating electron charges, that has been proposed to drive nuclear spin dynamics at low magnetic fields in the insulating samples. The characteristic values of these magnetic fields are given by dipole-dipole interaction between nuclei in bulk samples, and are greatly enhanced in microcavities, presumably due to additional strain, inherent to micro and nanostructures.

cond-mat.mes-hall↗

arXiv2016

Nuclear spin warm-up in bulk n-GaAs

We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, that cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, that governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping can be studied and harnessed in much simpler model environment of n-GaAs bulk crystal.

cond-mat.mes-hall↗

arXiv2015

Optical spin orientation of minority holes in a modulation-doped GaAs/(Ga,Al)As quantum well

The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and polarization of the photoluminescence in a magnetic field are well described in a model whose main elements are resonant absorption of the exciting light by the Landau levels and mixing of the heavy- and light-hole subbands. After subtraction of these effects, the observed influence of magnetic fields on the spin polarization can be well interpreted by a standard approach of the optical orientation method. The spin relaxation of holes is controlled by the Dyakonov-Perel' mechanism. Deceleration of the spin relaxation by the magnetic field occurs through the Ivchenko mechanism - due to the cyclotron motion of holes. Mobility of holes was found to be two orders of magnitude smaller than that of electrons, being determined by the scattering of holes upon the electron gas.

cond-mat.mes-hall↗

arXiv2015

Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure

Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wave function overlap and is therefore short-ranged, so that it may be compromised across the interface. Here we study a hybrid structure consisting of a ferromagnetic Co-layer and a semiconducting CdTe quantum well, separated by a thin (Cd,Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wave function overlap of quantum well holes and magnetic Co atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 10 nm. We suggest that the resulting spin polarization of the holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.

cond-mat.mtrl-sci↗

arXiv2010

Optical orientation of Mn^2+ ions in GaAs

We report on optical orientation of Mn^2+ in bulk GaAs under application of weak longitudinal magnetic field (B <= 100 mT). The manganese spin polarization of 25% is directly evaluated using spin flip Raman scattering spectroscopy. The dynamical polarization of Mn^2+ occurs due to s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence uncovers nontrivial electron spin dynamics where the oriented Mn^2+ ions tend to stabilize the electron spin.

cond-mat.mtrl-sci↗

arXiv2009

Long-lived spin memory in Mn-doped GaAs: Time resolved study

We study the electron spin dynamics in p-type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.

cond-mat.mtrl-sci↗

arXiv2007

Suppression of electron spin relaxation in Mn-doped GaAs

We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.

cond-mat.mtrl-sci↗

arXiv2007

Stabilizing effect of nuclear quadrupole interaction on the polarization of electron-nuclear spin system in a quantum dot

Nuclear quadrupole interaction extends the limits imposed by hyperfine interaction on the spin coherence of the electron and nuclei in a quantum dot. The strain-induced nuclear quadrupole interaction suppresses the nuclear spin flip and makes possible the zero-field dynamic nuclear polarization in self-organized InP/InGaP quantum dots. The direction of the effective nuclear magnetic field is fixed in space, thus quenching the magnetic depolarization of the electron spin in the quantum dot. The quadrupole interaction suppresses the zero-field electron spin decoherence also for the case of non-polarized nuclei. These results provide a new vision of the role of the nuclear quadrupole interaction in nanostructures: it elongates the spin memory of the electron-nuclear system.

cond-mat.mes-hall↗

arXiv2006

Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well

We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons within the narrow exciton-trion bias transition in the PL spectra, implying a polarization sensitivity of 200 % per Volt. This effect results from a very efficient trapping of neutral excitons by the quantum well interfacial fluctuations (so-called "natural" quantum dots) containing resident electrons.

cond-mat.mes-hall↗

arXiv2004

Suppression of Dyakonov-Perel Spin Relaxation in high mobility n-GaAs

We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakonov-Perel theory. The dynamics of the spin-orbit field differs substantially from the usual scheme: although all the experimental data can be self-consistently interpreted as a precessional spin relaxation induced by a random spin-orbit field, the correlation time of this random field, surprisingly, is much shorter than, and is independent of, the momentum relaxation time determined from transport measurements. Understanding of this phenomenon could lead to high temperature engineering of the electron spin memory.

cond-mat.other↗

arXiv2002

Low-temperature spin relaxation in n-type GaAs

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction

cond-mat↗

arXiv2002

Manipulation of the Spin Memory of Electrons in n-GaAs

We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by the electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of n-GaAs layer.

cond-mat↗