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Low-temperature spin relaxation in n-type GaAs

R. I. Dzhioev·K. V. Kavokin·V. L. Korenev·M. V. Lazarev·B. Ya. Meltser·M. N. Stepanova·B. P. Zakharchenya·D. Gammon·D. S. Katzer
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Abstract

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction

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R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, B. Ya. Meltser, M. N. Stepanova, B. P. Zakharchenya, D. Gammon, D. S. Katzer. 2002-08-09. Low-temperature spin relaxation in n-type GaAs. https://doi.org/10.1103/physrevb.66.245204

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