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R. Leturcq

Publications and source records attributed to R. Leturcq.

At least 19 recordsLinked to original sources

Electron counting in quantum dots

We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters. In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons. The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies.

cond-mat.mes-hall

Universality of Bias- and Temperature-induced Dephasing in Ballistic Electronic Interferometers

We performed a transport measurement in a ballistic Aharonov-Bohm ring and a Fabry-Perot type interferometer. In both cases we found that the interference signal is reversed at a certain bias voltage and that the visibility decays exponentially as a function of temperature, being in a strong analogy with recent reports on the electronic Mach-Zehnder interferometers. By analyzing the data including those in the previous works, the energy scales that characterize the dephasing are found to be dominantly dependent on the interferometer size, implying the presence of a universal behavior in ballistic interferometers in both linear and non-linear transport regimes.

cond-mat.mes-hall

Detecting single-electron tunneling involving virtual processes in real time

We use time-resolved charge detection techniques to probe virtual tunneling processes in a double quantum dot. The process involves an energetically forbidden state separated by an energy $δ$ from the Fermi energy in the leads. The non-zero tunneling probability can be interpreted as cotunneling, which occurs as a direct consequence of time-energy uncertainty. For small energy separation the electrons in the quantum dots delocalize and form molecular states. In this regime we establish the experimental equivalence between cotunneling and sequential tunneling into molecular states for electron transport in a double quantum dot. Finally, we investigate inelastic cotunneling processes involving excited states of the quantum dots. Using the time-resolved charge detection techniques, we are able to extract the shot noise of the current in the cotunneling regime.

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Dynamics of coupled spins in quantum dots with strong spin-orbit interaction

We investigated the time dependence of two-electron spin states in a double quantum dot fabricated in an InAs nanowire. In this system, spin-orbit interaction has substantial influence on the spin states of confined electrons. Pumping single electrons through a Pauli spin-blockade configuration allowed to probe the dynamics of the two coupled spins via their influence on the pumped current. We observed spin-relaxation with a magnetic field dependence different from GaAs dots, which can be explained by spin-orbit interaction. Oscillations were detected for times shorter than the relaxation time, which we attribute to coherent evolution of the spin states.

cond-mat.mes-hall

Time-resolved detection of single-electron interference

We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform time-resolved measurements of single-electron tunneling. With increased bias voltage, the quantum point contact exerts a back-action on the interferometer leading to decoherence. We attribute this to emission of radiation from the quantum point contact, which drives non-coherent electronic transitions in the quantum dots.

cond-mat.mes-hall

Detecting THz current fluctuations in a quantum point contact using a nanowire quantum dot

We use a nanowire quantum dot to probe high-frequency current fluctuations in a nearby quantum point contact. The fluctuations drive charge transitions in the quantum dot, which are measured in real-time with single-electron detection techniques. The quantum point contact (GaAs) and the quantum dot (InAs) are fabricated in different material systems, which indicates that the interactions are mediated by photons rather than phonons. The large energy scales of the nanowire quantum dot allow radiation detection in the long-wavelength infrared regime.

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Self-aligned charge read-out for InAs nanowire quantum dots

A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact which is used as a charge detector. The addition of one electron to the quantum dot leads to a change of the conductance of the charge detector by typically 20%. The charge sensitivity of the detector is used to measure Coulomb diamonds as well as charging events outside the dot. Charge stability diagrams measured by transport through the quantum dot and charge detection merge perfectly.

cond-mat.mes-hall

Measuring current by counting electrons in a nanowire quantum dot

We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting compare well to a direct measurements of the quantum dot current, when taking the finite bandwidth of the detector into account. The ability to detect single electrons also opens up possibilities for manipulating and detecting individual spins in nanowire quantum dots.

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Hysteretic magnetotransport in p-type AlGaAs heterostructures with In/Zn/Au ohmic contacts

The two-terminal magneto-conductance of a hole gas in C-doped AlGaAs/GaAs heterostructures with ohmic contacts consisting of alloyed In/Zn/Au displays a pronounced hysteresis of the conductance around zero magnetic field. The hysteresis disappears above magnetic fields of around 0.5 T and temperatures above 300 mK. For magnetic fields below 10 mT we observe a pronounced dip in the magneto-conductance. We tentatively discuss these experimental observations in the light of superconductivity of the ohmic contacts.

cond-mat.mes-hall

Hole transport in p-type GaAs quantum dots and point contacts

Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances in two quantum dots with different geometries. Charging energies for both dots, extracted from Coulomb diamond measurements are in agreement with the lithographic dimensions of the dots. The absence of excited states in Coulomb diamond measurements indicates that the dots are in the multi-level transport regime.

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Pauli spin-blockade in an InAs nanowire double quantum dot

We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and the large singlet-triplet splitting, which can be measured and tuned by a gate voltage.

cond-mat.mes-hall

Frequency-selective single photon detection using a double quantum dot

We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of electrons between the quantum dots due to photon absorption. The frequency of the absorbed radiation is set by the energy separation between the dots, which is easily tuned with gate voltages. Using time-resolved charge detection techniques, we can directly relate the detection of a tunneling electron to the absorption of a single photon.

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Spin state mixing in InAs double quantum dots

We quantify the contributions of hyperfine and spin-orbit mediated singlet-triplet mixing in weakly coupled InAs quantum dots by electron transport spectroscopy in the Pauli spin blockade regime. In contrast to double dots in GaAs, the spin-orbit coupling is found to be more than two orders of magnitudes larger than the hyperfine mixing energy. It is already effective at magnetic fields of a few mT, where deviations from hyperfine mixing are observed.

cond-mat.mes-hall

Measurements of higher order noise correlations in a quantum dot with a finite bandwidth detector

We present measurements of the fourth and fifth cumulants of the distribution of transmitted charge in a tunable quantum dot. We investigate how the measured statistics is influenced by the finite bandwidth of the detector and by the finite measurement time. By including the detector when modeling the system, we use the theory of full counting statistics to calculate the noise levels for the combined system. The predictions of the finite-bandwidth model are in good agreement with measured data.

cond-mat.mes-hall

Suppression of spin relaxation in an InAs nanowire double quantum dot

We investigate the triplet-singlet relaxation in a double quantum dot defined by top-gates in an InAs nanowire. In the Pauli spin blockade regime, the leakage current can be mainly attributed to spin relaxation. While at weak and strong inter-dot coupling relaxation is dominated by two individual mechanisms, the relaxation is strongly reduced at intermediate coupling and finite magnetic field. In addition we observe a charateristic bistability of the spin-non conserving current as a function of magnetic field. We propose a model where these features are explained by the polarization of nuclear spins enabled by the interplay between hyperfine and spin-orbit mediated relaxation.

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Counting statistics and super-Poissonian noise in a quantum dot

We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the dot to source and drain contacts could be determined individually. In the high bias regime, the method was used to probe excited states of the dot. Furthermore, we have detected bunching of electrons, leading to super-Poissonian noise. We have used the framework of the full counting statistics (FCS) to model the experimental data. The existence of super-Poissonian noise suggests a long relaxation time for the involved excited state, which could be related to the spin relaxation time.

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Top-gate defined double quantum dots in InAs nanowires

We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating layer. We demonstrate the full tunability from strong to weak coupling between the dots. The quantum mechanical nature of the coupling leads to the formation of a molecular state extending over both dots. The excitation spectra of the individual dots are observable by their signatures in the nonlinear transport.

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Tunable few electron quantum dots in InAs nanowires

Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.

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