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Top-gate defined double quantum dots in InAs nanowires

A. Pfund·I. Shorubalko·R. Leturcq·K. Ensslin
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Abstract

We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating layer. We demonstrate the full tunability from strong to weak coupling between the dots. The quantum mechanical nature of the coupling leads to the formation of a molecular state extending over both dots. The excitation spectra of the individual dots are observable by their signatures in the nonlinear transport.

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A. Pfund, I. Shorubalko, R. Leturcq, K. Ensslin. 2006-09-19. Top-gate defined double quantum dots in InAs nanowires. https://doi.org/10.1063/1.2409625

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