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R. Loloee

Publications and source records attributed to R. Loloee.

15 recordsLinked to original sources

Piezoacoustics for precision control of electrons floating on helium

Piezoelectric surface acoustic waves (SAWs) are powerful for investigating and controlling elementary and collective excitations in condensed matter. In semiconductor two-dimensional electron systems SAWs have been used to reveal the spatial and temporal structure of electronic states, produce quantized charge pumping, and transfer quantum information. In contrast to semiconductors, electrons trapped above the surface of superfluid helium form an ultra-high mobility, two-dimensional electron system home to strongly-interacting Coulomb liquid and solid states, which exhibit non-trivial spatial structure and temporal dynamics prime for SAW-based experiments. Here we report on the coupling of electrons on helium to an evanescent piezoelectric SAW. We demonstrate precision acoustoelectric transport of as little as ~0.01% of the electrons, opening the door to future quantized charge pumping experiments. We also show SAWs are a route to investigating the high-frequency dynamical response, and relaxational processes, of collective excitations of the electronic liquid and solid phases of electrons on helium.

quant-ph

Anomalous attenuation of piezoacoustic surface waves by liquid helium thin films

We report on the observation of an anomalously high attenuation of high frequency surface acoustic waves by thin films of liquid $^{4}$He. The piezoelectric acoustic waves propagate along the surface of a lithium niobate substrate, which is coated with varying amounts of liquid helium. When the thickness of the helium layer is much larger than the wavelength of the surface acoustic wave on the substrate its attenuation is dominated by the excitation of compressional waves into the liquid, in good agreement with theory and previous measurements. However, for sufficiently thin helium coverage, we find that the acoustic wave attenuation is significantly increased beyond that measured with the substrate submerged in bulk liquid. Possible mechanisms for this enhanced attenuation are discussed.

cond-mat.mes-hall

Unconventional field-effect transistor composed of electrons floating on liquid helium

We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to produce a highly non-uniform, but precisely controlled, charge density to reveal a negative source-drain current. This behavior can be understood by considering the propagation of damped charge oscillations along a transmission line formed by the inhomogeneous sheet of two-dimensional electrons above, and between, the source and drain electrodes of the transistor.

cond-mat.mes-hall

Spin-valve Josephson junctions for cryogenic memory

Josephson junctions containing two ferromagnetic layers are being considered for use in cryogenic memory. Our group recently demonstrated that the ground-state phase difference across such a junction with carefully chosen layer thicknesses could be controllably toggled between zero and $\pi$ by switching the relative magnetization directions of the two layers between the antiparallel and parallel configurations. However, several technological issues must be addressed before those junctions can be used in a large-scale memory. Many of these issues can be more easily studied in single junctions, rather than in the Superconducting QUantum Interference Device (SQUID) used for the phase-sensitive measurements. In this work, we report a comprehensive study of spin-valve junctions containing a Ni layer with a fixed thickness of 2.0 nm, and a NiFe layer of thickness varying between 1.1 and 1.8 nm in steps of 0.1 nm. We extract the field shift of the Fraunhofer patterns and the critical currents of the junctions in the parallel and antiparallel magnetic states, as well as the switching fields of both magnetic layers. We also report a partial study of similar junctions containing a slightly thinner Ni layer of 1.6 nm and the same range of NiFe thicknesses. These results represent the first step toward mapping out a ``phase diagram" for phase-controllable spin-valve Josephson junctions as a function of the two magnetic layer thicknesses.

cond-mat.supr-con

Spin Triplet Supercurrent in Co/Ni Multilayer Josephson Junctions with Perpendicular Anisotropy

We have measured spin-triplet supercurrent in Josephson junctions of the form S/F'/F/F'/S, where S is superconducting Nb, F' is a thin Ni layer with in-plane magnetization, and F is a Ni/[Co/Ni]n multilayer with out-of-plane magnetization. The supercurrent in these junctions decays very slowly with F-layer thickness, and is much larger than in similar junctions not containing the two F' layers. Those two features are the characteristic signatures of spin-triplet supercurrent, which is maximized by the orthogonality of the magnetizations in the F and F' layers. Magnetic measurements confirm the out-of-plane anisotropy of the Co/Ni multilayers. These samples have their critical current optimized in the as-prepared state, which will be useful for future applications.

cond-mat.supr-con

Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces

Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flipping at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for CPP-MR and spin-torque experiments with perpendicular anisotropy. We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, and Py-based, symmetric double exchange-biased spin-valves (DEBSVs) containing inserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Ni multilayers, to derive Co/Ni interface specific resistances AR(Co/Ni)(Up) = 0.03 (+0.02)(-0.03) f-ohm-m^2 and AR(Co/Ni)(down) = 1.00 +/- 0.07 f-ohm-m^2, and interface spin-flipping parameter delta(Co/Ni) = 0.35 +/- 0.05. The specific resistances are consistent with our no-free-parameter calculations for an interface thickness between 2 and 4 monolayers (ML) that is compatible with expectations.

cond-mat.mtrl-sci

A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu

We describe a technique, using the current-perpendicular-to-plane (CPP) geometry, to measure the parameter delta(F/N), characterizing flipping of electron spins at a ferromagnetic/non-magnetic (F/N) metallic interface. The technique involves measuring the CPP magnetoresistance of a sample containing a ferromagnetically coupled [F/N]x n multilayer embedded within the 20 nm thick central Cu layer of a symmetric Py-based, double exchange-biased spin-valve. To focus on delta(F/N), the F- and N-layers are made thin compared to their spin-diffusion lengths. We test the technique using F/N = Co/Cu. Analysing with no adjustable parameters, gives inconsistency with delta(Co/Cu) = 0, but consistency with our prior value of delta(Co/Cu) = 0.25 (+/- 0.1). Taking delta(Co/Cu) as adjustable gives delta(Co/Cu) = 0.33 (+0.03/-0.08).

cond-mat.mtrl-sci

Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys

Weakly ferromagnetic alloys are being used by several groups in the study of superconducting/ferromagnetic hybrid systems. Because spin-flip and spin-orbit scattering in such alloys disrupt the penetration of pair correlations into the ferromagnetic material, it is desirable to have a direct measurement of the spin memory length in such alloys. We have measured the spin memory length at 4.2 K in sputtered Pd0.88Ni0.12 and Pd0.987Fe0.013 alloys using methods based on current-perpendicular-to-plane giant magnetoresistance. The alloys are incorporated into hybrid spin valves of various types, and the spin memory length is determined by fits of the Valet-Fert spin-transport equations to data of magnetoresistance vs. alloy thickness. For the case of PdNi alloy, the resulting values of the spin memory length are lsf(PdNi) = 2.8 +/- 0.5 nm and 5.4 +/- 0.6 nm, depending on whether or not the PdNi is exchange biased by an adjacent Permalloy layer. For PdFe, the spin memory length is somewhat longer, lsf(PdFe) = 9.6 +/- 2 nm, consistent with earlier measurements indicating lower spin-orbit scattering in that material. Unfortunately, even the longer spin memory length in PdFe may not be long enough to facilitate observation of spin-triplet superconducting correlations predicted to occur in superconducting/ferromagnetic hybrid systems in the presence of magnetic inhomogeneity.

cond-mat.supr-con

Specific Resistance of Pd/Ir Interfaces

From measurements of the current-perpendicular-to-plane (CPP) total specific resistance (AR = area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir) = 1.02 +/- 0.06 fOhmm^2, for this metal pair with closely similar lattice parameters. Assuming a single fcc crystal structure with the average lattice parameter, no-free-parameter calculations, including only spd orbitals, give for perfect interfaces, 2AR(Pd/Ir)(Perf) = 1.21 +/-0.1 fOhmm^2, and for interfaces composed of two monolayers of a random 50%-50% alloy, 2AR(Pd/Ir)(50/50) = 1.22 +/- 0.1 fOhmm^2. Within mutual uncertainties, these values fall just outside the range of the experimental value. Updating to add f-orbitals gives 2AR(Pd/Ir)(Perf) = 1.10 +/- 0.1 fOhmm^2 and 2AR(Pd/Ir)(50-50) = 1.13 +/- 0.1 fOhmm^2, values now compatible with the experimental one. We also update, with f-orbitals, calculations for other pairs

cond-mat.mtrl-sci

Spin-Diffusion Lengths in Dilute Cu(Ge) and Ag(Sn) Alloys

We use current-perpendicular-to-plane (CPP) exchange-biased spin-valves to directly measure spin diffusion lengths lsf for N = Cu(2.1 at.%Ge) and Ag(3.6 at.%Sn) alloys. We find lsf(Cu2%Ge)) = 117+10-6 nm and lsf(Ag4%Sn)= 39 +/- 3 nm. The good agreement of this lsf(Cu2%Ge) with the value lsf(Cu2%Ge) = 121 +/- 10 nm derived from an independent spin-orbit cross-section measurement for Ge in Cu, quantitatively validates the use of Valet-Fert theory for CPP-MR data analysis to layer thicknesses several times larger than had been done before. From the value of lsf(Ag4%Sn), we predict the ESR spin-orbit cross-section for Sn impurities in Ag.

cond-mat.mtrl-sci

Comparison of Measured and Calculated Specific Resistances of Pd/Pt Interfaces

We compare specific resistances (AR equals area A times resistance R) of sputtered Pd/Pt interfaces measured in two different ways with no-free-parameter calculations. One way gives 2AR(Pd/Pt) of 0.29 (0.03) fohm-m(2) and the other 0.17 (0.13) fohm-m(2). From these we derive a best estimate of 2AR(Pd/Pt) of 0.28 (0.06) fohm-m(2), which overlaps with no-free-parameter calculations: 2AR(predicted) of 0.30 (0.04) fohm-m(2) for flat, perfect interfaces, or 0.33 (0.04) fohm-m(2) for interfaces composed of 2 monolayers of a 50percent-50percent PdPt alloy. These results support three prior examples of agreement between calculations and measurements for pairs of metals having the same crystal structure and the same lattice parameter to within 1 percent. We also estimate the spin-flipping probability at Pd/Pt interfaces as 0.13 (0.08).

cond-mat.mtrl-sci

Characteristics of strong ferromagnetic Josephson junctions with epitaxial barriers

We present the measurement of superconductor / ferromagnetic Josephson junctions, based on an epitaxial Nb bottom electrode and epitaxial Fe20Ni80 barrier. Uniform junctions have been fabricated with a barrier thicknesses in the range 2-12 nm. The maximum critical current density ~ 2.4 \pm 0.2 * 10^9 Am^-2 was found for a devices with a 3 nm thick barrier at 4.2 K, corresponding to an average characteristic voltage I_C R_N ~ 16 \muV. The I_C R_N showed a non-monotonic behavior with Fe20Ni80 thickness. The variation of the resistance of a unit area AR_N, of the junctions with barrier thickness gave a Nb/Py specific interface resistance of 6.0 \pm 0.5 fΩm^2 and Fe20Ni80 resistivity of 174 \pm 50 nΩm, consistent with other studies in polycrystalline samples.

cond-mat.supr-con

Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au

We compare magnetoresistances (MR) and switching currents (I_s) at room temperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoing current-induced magnetization switching (CIMS), with non-magnetic metals N = Cu, Ag, and Au. The N-metal thickness is held fixed at 10 nm. Any systematic differences in MR and I_s for the different N-metals are modest, suggesting that Ag and Au represent potentially viable alternatives for CIMS studies and devices to the more widely used Cu.

cond-mat.mtrl-sci

Giant Magnetoresistance in Multilayers with Noncollinear Magnetizations

We study the dependence of perpendicular-current magnetoresistance in magnetic multilayers on the angle between the magnetizations of the layers. This dependence varies with the thickness of one of the layers, and is different for multilayers with two and three magnetic layers. We derive a system of equations representing an extension of the two-current series resistor model, and show that the angular dependence of magnetoresistance gives information about the noncollinear spin-transport in ferromagnets.

cond-mat.mtrl-sci

Controlled normal and inverse magnetoresistance and current-driven magnetization switching in magnetic nanopillars

Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal nanopillars. We show all four combinations of normal and inverse behaviors, at both room temperature and 4.2K. In all cases studied, the direction of switching is set by the net scattering anisotropy of the fixed (polarizing) ferromagnet. We provide simple arguments for what we see.

cond-mat.mtrl-sci