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arXiv · 1012.4388

Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces

H. Y. T. Nguyen·R. Acharyya·E. Huey·B. Richard·R. Loloee·W. P. Pratt Jr.·J. Bass·Shuai Wang·Ke Xia
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Abstract

Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flipping at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for CPP-MR and spin-torque experiments with perpendicular anisotropy. We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, and Py-based, symmetric double exchange-biased spin-valves (DEBSVs) containing inserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Ni multilayers, to derive Co/Ni interface specific resistances AR(Co/Ni)(Up) = 0.03 (+0.02)(-0.03) f-ohm-m^2 and AR(Co/Ni)(down) = 1.00 +/- 0.07 f-ohm-m^2, and interface spin-flipping parameter delta(Co/Ni) = 0.35 +/- 0.05. The specific resistances are consistent with our no-free-parameter calculations for an interface thickness between 2 and 4 monolayers (ML) that is compatible with expectations.

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H. Y. T. Nguyen, R. Acharyya, E. Huey, B. Richard, R. Loloee, W. P. Pratt Jr., J. Bass, Shuai Wang, Ke Xia. 2010-12-20. Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces. https://doi.org/10.1103/physrevb.82.220401

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