arXiv subjects

R. N. Bhatt

Publications and source records attributed to R. N. Bhatt.

At least 55 records · Page 3Linked to original sources

arXiv2014

Matrix-Product-State Algorithm for Finite Fractional Quantum Hall Systems

Exact diagonalization is a powerful tool to study fractional quantum Hall (FQH) systems. However, its capability is limited by the exponentially increasing computational cost. In order to overcome this difficulty, density-matrix-renormalization-group (DMRG) algorithms were developed for much larger system sizes. Very recently, it was realized that some model FQH states have exact matrix-product-state (MPS) representation. Motivated by this, here we report a MPS code, which is closely related to, but different from traditional DMRG language, for finite FQH systems on the cylinder geometry. By representing the many-body Hamiltonian as a matrix-product-operator (MPO) and using single-site update and density matrix correction, we show that our code can efficiently search the ground state of various FQH systems. We also compare the performance of our code with traditional DMRG. The possible generalization of our code to infinite FQH systems and other physical systems is also discussed.

cond-mat.str-el↗

arXiv2014

Numerical Study of a Many-Body Localized System Coupled to a Bath

We use exact diagonalization to study the breakdown of many-body localization in a strongly disordered and interacting system coupled to a thermalizing environment. We show that the many-body level statistics cross over from Poisson to GOE, and the localized eigenstates thermalize, with the crossover coupling decreasing with the size of the bath in a manner consistent with the hypothesis that an infinitesimally small coupling to a thermodynamic bath should destroy localization of the eigenstates. However, signatures of incomplete localization survive in spectral functions of local operators even when the coupling to the environment is non-zero. These include a discrete spectrum and a gap at zero frequency. Both features are washed out by line broadening as one increases the coupling to the bath.

cond-mat.dis-nn↗

arXiv2014

Hyperfine Stark effect of shallow donors in silicon

We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz.

cond-mat.mes-hall↗

arXiv2014

Large Disorder Renormalization Group Study of the Anderson Model of Localization

We describe a large disorder renormalization group (LDRG) method for the Anderson model of localization in one dimension which decimates eigenstates based on the size of their wavefunctions rather than their energy. We show that our LDRG scheme flows to infinite disorder, and thus becomes asymptotically exact. We use it to obtain the disorder-averaged inverse participation ratio and density of states for the entire spectrum. A modified scheme is formulated for higher dimensions, which is found to be less efficient, but capable of improvement.

cond-mat.dis-nn↗

arXiv2013

Quasiholes of 1/3 and 7/3 quantum Hall states: size estimates via exact diagonalization and density-matrix renormalization group

We determine the size of the elementary quasihole in $ν=1/3$ and $ν=7/3$ quantum Hall states via exact-diagonalization and density-matrix renormalization group calculations on the sphere and cylinder, using a variety of short- and long-range pinning potentials. The size of the quasihole at filling factor $ν=1/3$ is estimated to be $\approx 4\ell_B$, and that of $ν=7/3$ is $\approx 7\ell_B$, where $\ell_B$ is the magnetic length. In contrast, the size of the Laughlin quasihole, expected to capture the basic physics in these two states, is around $\approx 2.5\ell_B$. Our work supports the earlier findings that the quasihole in the first excited Landau level is significantly larger than in the lowest Landau level.

cond-mat.str-el↗

arXiv2013

Common path interference in Zener tunneling is a universal phenomenon

We show that the probability of electric field induced interband tunneling in solid state systems is generically a non-monotonic (oscillatory) function of the applied field. This unexpected behavior can be understood as arising due to a common path interference between two distinct tunneling solutions. The phenomenon is insensitive to magnetic field, and arises whenever the low energy dispersion relation contains higher order terms in addition to the usual $p^2$ term. Such higher order terms are generically present, albeit with small co-efficient, so that the oscillatory Zener tunneling is a universal phenomenon. However, the first `Zener oscillation' occurs at a transmission probability which is exponentially small when the co-efficient of the higher order terms is small. This explains why this oscillatory aspect of Zener tunneling has been hitherto overlooked, despite its universality. The common path interference is also destroyed by the presence of odd powers of $p$ in the low energy dispersion relation. Since odd powers of $p$ are strictly absent only when the tunneling barrier lies along an axis of mirror symmetry, it follows that the robustness of the oscillatory behavior depends on the orientation of the tunneling barrier. Bilayer graphene is identified as a particularly good material for observation of common path interference, due to its unusual nearly isotropic dispersion relation, where the $p^4$ term makes the leading contribution.

cond-mat.mes-hall↗

arXiv2012

Numerical studies of the fractional quantum Hall effect in systems with tunable interactions

The discovery of the fractional quantum Hall effect in GaAs-based semiconductor devices has lead to new advances in condensed matter physics, in particular the possibility for exotic, topological phases of matter that possess fractional, and even non-Abelian, statistics of quasiparticles. One of the main limitations of the experimental systems based on GaAs has been the lack of tunability of the effective interactions between two-dimensional electrons, which made it difficult to stabilize some of the more fragile states, or induce phase transitions in a controlled manner. Here we review the recent studies that have explored the effects of tunability of the interactions offered by alternative two-dimensional systems, characterized by non-trivial Berry phases and including graphene, bilayer graphene and topological insulators. The tunability in these systems is achieved via external fields that change the mass gap, or by screening via dielectric plate in the vicinity of the device. Our study points to a number of different ways to manipulate the effective interactions, and engineer phase transitions between quantum Hall liquids and compressible states in a controlled manner.

cond-mat.mes-hall↗

arXiv2012

Singular Behavior of Anderson Localized Wavefunctions for a Two-Site Model

We show analytically that the apparent non-analyticity discovered recently in the inverse participation ratio (IPR) of the eigenstates in Anderson's model of localization is also present in a simple two-site model, along with a concurrent non-analyticity in the density of states (DOS) at the same energy. We demonstrate its evolution from two sites to the thermodynamic limit by numerical methods. For the two site model, non-analyticity in higher derivatives of the DOS and IPR is also proven to exist for all bounded distributions of disorder.

cond-mat.dis-nn↗

arXiv2012

"Rare" Fluctuation Effects in the Anderson Model of Localization

We discuss the role of rare fluctuation effects in quantum condensed matter systems. In particular, we present recent numerical results of the effect of resonant states in Anderson's original model of electron localization. We find that such resonances give rise to anomalous behavior of eigenstates not just far in the Lifshitz tail, but rather for a substantial fraction of eigenstates, especially for intermediate disorder. The anomalous behavior includes non-analyticity in various properties as a characteristic. The effect of dimensionality on the singularity, which is present in all dimensions, is described, and the behavior for bounded and unbounded disorder is contrasted.

cond-mat.dis-nn↗

arXiv2012

Band mass anisotropy and the intrinsic metric of fractional quantum Hall systems

It was recently pointed out that topological liquid phases arising in the fractional quantum Hall effect (FQHE) are not required to be rotationally invariant, as most variational wavefunctions proposed to date have been. Instead, they possess a geometric degree of freedom corresponding to a shear deformation that acts like an intrinsic metric. We apply this idea to a system with an anisotropic band mass, as is intrinsically the case in many-valley semiconductors such as AlAs and Si, or in isotropic systems like GaAs in the presence of a tilted magnetic field, which breaks the rotational invariance. We perform exact diagonalization calculations with periodic boundary conditions (torus geometry) for various filling fractions in the lowest, first and second Landau levels. In the lowest Landau level, we demonstrate that FQHE states generally survive the breakdown of rotational invariance by moderate values of the band mass anisotropy. At 1/3 filling, we generate a variational family of Laughlin wavefunctions parametrized by the metric degree of freedom. We show that the intrinsic metric of the Laughlin state adjusts as the band mass anisotropy or the dielectric tensor are varied, while the phase remains robust. In the n=1 Landau level, mass anisotropy drives transitions between incompressible liquids and compressible states with charge density wave ordering. In n>=2 Landau levels, mass anisotropy selects and enhances stripe ordering with compatible wave vectors at partial 1/3 and 1/2 fillings.

cond-mat.mes-hall↗

arXiv2012

Comparison of the density-matrix renormalization group method applied to fractional quantum Hall systems in different geometries

We report a systematic study of the fractional quantum Hall effect (FQHE) using the density-matrix renormalization group (DMRG) method on two different geometries: the sphere and the cylinder. We provide convergence benchmarks based on model Hamiltonians known to possess exact zero-energy ground states, as well as an analysis of the number of sweeps and basis elements that need to be kept in order to achieve the desired accuracy.The ground state energies of the Coulomb Hamiltonian at $ν=1/3$ and $ν=5/2$ filling are extracted and compared with the results obtained by previous DMRG implementations in the literature. A remarkably rapid convergence in the cylinder geometry is noted and suggests that this boundary condition is particularly suited for the application of the DMRG method to the FQHE.

cond-mat.str-el↗

arXiv2012

Stability of the k=3 Read-Rezayi state in chiral two-dimensional systems with tunable interactions

The k=3 Read-Rezayi (RR) parafermion quantum Hall state hosts non-Abelian excitations which provide a platform for the universal topological quantum computation. Although the RR state may be realized at the filling factor ν=12/5 in GaAs-based two-dimensional electron systems, the corresponding quantum Hall state is weak and at present nearly impossible to study experimentally. Here we argue that the RR state can alternatively be realized in a class of chiral materials with massless and massive Dirac-like band structure. This family of materials encompasses monolayer and bilayer graphene, as well as topological insulators. We show that, compared to GaAs, these systems provide several important advantages in realizing and studying the RR state. Most importantly, the effective interactions can be tuned {\it in situ} by varying the external magnetic field, and by designing the dielectric environment of the sample. This tunability enables the realization of RR state with controllable energy gaps in different Landau levels. It also allows one to probe the quantum phase transitions to other compressible and incompressible phases.

cond-mat.mes-hall↗

arXiv2011

Tunable interactions and phase transitions in Dirac materials in a magnetic field

A partially filled Landau level (LL) hosts a variety of correlated states of matter with unique properties. The ability to control these phases requires tuning the effective electron interactions within a LL, which has been difficult to achieve in GaAs-based structures. Here we consider a class of Dirac materials in which the chiral band structure, along with the mass term, gives rise to a wide tunability of the effective interactions by the magnetic field. This tunability is such that different phases can occur in a single LL, and phase transitions between them can be driven in situ. The incompressible, Abelian and non-Abelian, liquids are stabilized in interaction regimes different from GaAs. Our study points to a realistic method of controlling the correlated phases and studying the phase transitions between them in materials such as graphene, bilayer graphene, and topological insulators.

cond-mat.mes-hall↗

arXiv2011

The Universal Edge Physics in Fractional Quantum Hall Liquids

The chiral Luttinger liquid theory for fractional quantum Hall edge transport predicts universal power-law behavior in the current-voltage ($I$-$V$) characteristics for electrons tunneling into the edge. However, it has not been unambiguously observed in experiments in two-dimensional electron gases based on GaAs/GaAlAs heterostructures or quantum wells. One plausible cause is the fractional quantum Hall edge reconstruction, which introduces non-chiral edge modes. The coupling between counterpropagating edge modes can modify the exponent of the $I$-$V$ characteristics. By comparing the $ν=1/3$ fractional quantum Hall states in modulation-doped semiconductor devices and in graphene devices, we show that the graphene-based systems have an experimental accessible parameter region to avoid the edge reconstruction, which is suitable for the exploration of the universal edge tunneling exponent predicted by the chiral Luttinger liquid theory.

cond-mat.str-el↗

arXiv2011

Realizing Universal Edge Properties in Graphene Fractional Quantum Hall Liquids

Universal chiral Luttinger liquid behavior has been predicted for fractional quantum Hall edge states, but so far has not been observed experimentally in semiconductor-based two-dimensional electron gases. One likely cause of this absence of universality is the generic occurrence of edge reconstruction in such systems, which is the result of a competition between confinement potential and Coulomb repulsion. We show that due to a completely different mechanism of confinement, edge reconstruction can be avoided in graphene, which allows for the observation of the predicted universality.

cond-mat.str-el↗

arXiv2011

Singular Behavior of Eigenstates in Anderson's Model of Localization

We observe a singularity in the electronic properties of the Anderson Model of Localization with bounded diagonal disorder, which is clearly distinct from the well-established mobility edge (localization-delocalization transition) that occurs in dimensions $d>2$. We present results of numerical calculations for Anderson's original (box) distribution of onsite disorder in dimensions $d$ = 1, 2 and 3. To establish this hitherto unreported behavior, and to understand its evolution with disorder, we contrast the behavior of two different measures of the localization length of the electronic wavefunctions - the averaged inverse participation ratio and the Lyapunov exponent. Our data suggest that Anderson's model exhibits richer behavior than has been established so far.

cond-mat.dis-nn↗

arXiv2009

Search for Ferromagnetism in doped semiconductors in the absence of transition metal ions

In contrast to semiconductors doped with transition metal magnetic elements, which become ferromagnetic at temperatures below ~ 100K, semiconductors doped with non-magnetic ions (e.g. silicon doped with phosphorous) have not shown evidence of ferromagnetism down to millikelvin temperatures. This is despite the fact that for low densities the system is expected to be well modeled by the Hubbard model, which is predicted to have a ferromagnetic ground state at T=0 on 2- or 3-dimensional bipartite lattices in the limit of strong correlation near half-filling. We examine the impurity band formed by hydrogenic centers in semiconductors at low densities, and show that it is described by a generalized Hubbard model which has, in addition to strong electron-electron interaction and disorder, an intrinsic electron-hole asymmetry. With the help of mean field methods as well as exact diagonalization of clusters around half filling, we can establish the existence of a ferromagnetic ground state, at least on the nanoscale, which is more robust than that found in the standard Hubbard model. This ferromagnetism is most clearly seen in a regime inaccessible to bulk systems, but attainable in quantum dots and 2D heterostructures. We present extensive numerical results for small systems that demonstrate the occurrence of high-spin ground states in both periodic and positionally disordered 2D systems. We consider how properties of real doped semiconductors, such as positional disorder and electron-hole asymmetry, affect the ground state spin of small 2D systems. We also discuss the relationship between this work and diluted magnetic semiconductors, such as Ga_(1-x)Mn_(x)As, which though disordered, show ferromagnetism at relatively high temperatures.

cond-mat.str-el↗

arXiv2007

Modulated phases in magnetic models frustrated by long-range interactions

We study an Ising model in one dimension with short range ferromagnetic and long range (power law) antiferromagnetic interactions. We show that the zero temperature phase diagram in a (longitudinal) field H involves a sequence of up and down domains whose size varies continuously with H, between -H_c and H_c which represent the edge of the ferromagnetic up and down phases. The implications of long range interaction in many body systems are discussed.

cond-mat.stat-mech↗