arXiv subjects

R. N. Bhatt

Publications and source records attributed to R. N. Bhatt.

At least 73 records · Page 4Linked to original sources

arXiv2007

Nanoscale ferromagnetism in non-magnetic doped semiconductors

While ferromagnetism at relatively high temperatures is seen in diluted magnetic semiconductors such as Ga_(1-x)Mn_(x)As, doped semiconductors without magnetic ions have not shown evidence for ferromagnetism. Using a generalized disordered Hubbard model designed to characterize hydrogenic centers in semiconductors, we find that such systems may also exhibit a ferromagnetic ground state, at least on the nanoscale. This is found most clearly in a regime inaccessible to bulk systems, but attainable in quantum dots as well as heterostructures. We present numerical results demonstrating the occurrence of high spin ground states in both lattice and positionally disordered systems. We examine how the magnetic phases are affected by characteristics of real doped semiconductors, such as positional disorder and electron-hole asymmetry.

cond-mat.str-el↗

arXiv2005

Understanding and Improving the Wang-Landau Algorithm

We present a mathematical analysis of the Wang-Landau algorithm, prove its convergence, identify sources of errors and strategies for optimization. In particular, we found the histogram increases uniformly with small fluctuation after a stage of initial accumulation, and the statistical error is found to scale as $\sqrt{\ln f}$ with the modification factor $f$. This has implications for strategies for obtaining fast convergence.

cond-mat.stat-mech↗

arXiv2005

Mobility gap in fractional quantum Hall liquids: Effects of disorder and layer thickness

We study the behavior of two-dimensional electron gas in the fractional quantum Hall regime in the presence of finite layer thickness and correlated disordered potential. Generalizing the Chern number calculation to many-body systems, we determine the mobility gaps of fractional quantum Hall states based on the distribution of Chern numbers in a microscopic model. We find excellent agreement between experimentally measured activation gaps and our calculated mobility gaps, when combining the effects of both disordered potential and layer thickness. We clarify the difference between mobility gap and spectral gap of fractional quantum Hall states and explain the disorder-driven collapse of the gap and the subsequent transitions from the fractional quantum Hall states to insulator.

cond-mat.mes-hall↗

arXiv2004

Effects of large disorder on the Hofstadter butterfly

Motivated by the recent experiments on periodically modulated, two dimensional electron systems placed in large transversal magnetic fields, we investigate the interplay between the effects of disorder and periodic potentials in the integer quantum Hall regime. In particular, we study the case where disorder is larger than the periodic modulation, but both are small enough that Landau level mixing is negligible. In this limit, the self-consistent Born approximation is inadequate. We carry extensive numerical calculations to understand the relevant physics in the lowest Landau level, such as the spectrum and nature (localized or extended) of the wave functions. Based on our results, we propose a qualitative explanation of the new features uncovered recently in transport measurements.

cond-mat.mes-hall↗

arXiv2003

A Laterally Modulated 2D Electron System in the Extreme Quantum Limit

We report on magnetotransport of a two-dimensional electron system (2DES), located 32 nm below the surface, with a surface superlattice gate structure of periodicity 39 nm imposing a periodic modulation of its potential. For low Landau level fillings $ν$, the diagonal resistivity displays a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation. Theoretical arguments based on the combined effects of the long-wavelength, strong disorder and the short-wavelength, weak periodic modulation present in the 2DES qualitatively explain the data.

cond-mat.mes-hall↗

arXiv2003

Exchange anisotropy, disorder and frustration in diluted, predominantly ferromagnetic, Heisenberg spin systems

Motivated by the recent suggestion of anisotropic effective exchange interactions between Mn spins in Ga$_{1-x}$Mn$_x$As (arising as a result of spin-orbit coupling), we study their effects in diluted Heisenberg spin systems. We perform Monte Carlo simulations on several phenomenological model spin Hamiltonians, and investigate the extent to which frustration induced by anisotropic exchanges can reduce the low temperature magnetization in these models and the interplay of this effect with disorder in the exchange. In a model with low coordination number and purely ferromagnetic (FM) exchanges, we find that the low temperature magnetization is gradually reduced as exchange anisotropy is turned on. However, as the connectivity of the model is increased, the effect of small-to-moderate anisotropy is suppressed, and the magnetization regains its maximum saturation value at low temperatures unless the distribution of exchanges is very wide. To obtain significant suppression of the low temperature magnetization in a model with high connectivity, as is found for long-range interactions, we find it necessary to have both ferromagnetic and antiferromagnetic (AFM) exchanges (e.g. as in the RKKY interaction). This implies that disorder in the sign of the exchange interaction is much more effective in suppressing magnetization at low temperatures than exchange anisotropy.

cond-mat.dis-nn↗

arXiv2003

Disorder driven collapse of the mobility gap and transition to an insulator in fractional quantum Hall effect

We study the nu=1/3 quantum Hall state in presence of the random disorder. We calculate the topologically invariant Chern number, which is the only quantity known at present to unambiguously distinguish between insulating and current carrying states in an interacting system. The mobility gap can be determined numerically this way, which is found to agree with experimental value semiquantitatively. As the disorder strength increases towards a critical value, both the mobility gap and plateau width narrow continuously and ultimately collapse leading to an insulating phase.

cond-mat.mes-hall↗

arXiv2002

Spin Waves in Random Spin Chains

We study quantum spin-1/2 Heisenberg ferromagnetic chains with dilute, random antiferromagnetic impurity bonds with modified spin-wave theory. By describing thermal excitations in the language of spin waves, we successfully observe a low-temperature Curie susceptibility due to formation of large spin clusters first predicted by the real-space renormalization-group approach, as well as a crossover to a pure ferromagnetic spin chain behavior at intermediate and high temperatures. We compare our results of the modified spin-wave theory to quantum Monte Carlo simulations.

cond-mat.dis-nn↗

arXiv2002

Spin Waves in Disordered III-V Diluted Magnetic Semiconductors

We propose a new scheme for numerically computing collective-mode spectra for large-size systems, using a reformulation of the Random Phase Approximation. In this study, we apply this method to investigate the spectrum and nature of the spin-waves of a (III,Mn)V Diluted Magnetic Semiconductor. We use an impurity band picture to describe the interaction of the charge carriers with the local Mn spins. The spin-wave spectrum is shown to depend sensitively on the positional disorder of the Mn atoms inside the host semiconductor. Both localized and extended spin-wave modes are found. Unusual spin and charge transport is implied.

cond-mat.mtrl-sci↗

arXiv2002

Modified spin-wave study of random antiferromagnetic-ferromagnetic spin chains

We study the thermodynamics of one-dimensional quantum spin-1/2 Heisenberg ferromagnetic system with random antiferromagnetic impurity bonds. In the dilute impurity limit, we generalize the modified spin-wave theory for random spin chains, where local chemical potentials for spin-waves in ferromagnetic spin segments are introduced to ensure zero magnetization at finite temperature. This approach successfully describes the crossover from behavior of pure one-dimensional ferromagnet at high temperatures to a distinct Curie behavior due to randomness at low temperatures. We discuss the effects of impurity bond strength and concentration on the crossover and low temperature behavior.

cond-mat.dis-nn↗

arXiv2002

Monte Carlo simulations of an impurity band model for III-V diluted magnetic semiconductors

We report the results of a Monte Carlo study of a model of (III,Mn)V diluted magnetic semiconductors which uses an impurity band description of carriers coupled to localized Mn spins and is applicable for carrier densities below and around the metal-insulator transition. In agreement with mean field studies, we find a transition to a ferromagnetic phase at low temperatures. We compare our results for the magnetic properties with the mean field approximation, as well as with experiments, and find favorable qualitative agreement with the latter. The local Mn magnetization below the Curie temperature is found to be spatially inhomogeneous, and strongly correlated with the local carrier charge density at the Mn sites. The model contains fermions and classical spins and hence we introduce a perturbative Monte Carlo scheme to increase the speed of our simulations.

cond-mat↗

arXiv2002

Two-component approach for thermodynamic properties in diluted magnetic semiconductors

We examine the feasibility of a simple description of Mn ions in III-V diluted magnetic semiconductors (DMSs) in terms of two species (components), motivated by the expectation that the Mn-hole exchange couplings are widely distributed, expecially for low Mn concentrations. We find, using distributions indicated by recent numerical mean field studies, that the thermodynamic properties (magnetization, susceptibility, and specific heat) cannot be fit by a single coupling as in a homogeneous model, but can be fit well by a two-component model with a temperature dependent number of ``strongly'' and ``weakly'' coupled spins. This suggests that a two-component description may be a minimal model for the interpretation of experimental measurements of thermodynamic quantities in III-V DMS systems.

cond-mat.dis-nn↗

arXiv2001

One Dimensional Chain with Long Range Hopping

The one-dimensional (1D) tight binding model with random nearest neighbor hopping is known to have a singularity of the density of states and of the localization length at the band center. We study numerically the effects of random long range (power-law) hopping with an ensemble averaged magnitude $\expectation{|t_{ij}|} \propto |i-j|^{-σ}$ in the 1D chain, while maintaining the particle-hole symmetry present in the nearest neighbor model. We find, in agreement with results of position space renormalization group techniques applied to the random XY spin chain with power-law interactions, that there is a change of behavior when the power-law exponent $σ$ becomes smaller than 2.

cond-mat.dis-nn↗

arXiv2001

Mesoscopic Effects in the Quantum Hall Regime

We report results of a study of (integer) quantum Hall transitions in a single or multiple Landau levels for non-interacting electrons in disordered two-dimensional systems, obtained by projecting a tight-binding Hamiltonian to corresponding magnetic subbands. In finite-size systems, we find that mesoscopic effects often dominate, leading to apparent non-universal scaling behaviour in higher Landau levels. This is because localization length, which grows exponentially with Landau level index, exceeds the system sizes amenable to numerical study at present. When band mixing between multiple Landau levels is present, mesoscopic effects cause a crossover from a sequence of quantum Hall transitions for weak disorder to classical behaviour for strong disorder. This behaviour may be of relevance to experimentally observed transitions between quantum Hall states and the insulating phase at low magnetic fields.

cond-mat.mes-hall↗

arXiv2001

Reply to cond-mat/0111504

We show that the choice of the sign of the hopping matrix in our impurity band model for disordered III-V diluted magnetic semiconductors [PRL 87, 107293 (2000); cond-mat/0111045] is justified: with this choice, the impurity band is placed inside the gap and it has a mobility edge, as expected for a disordered system. The other sign choice, suggested in cond-mat/0111504, leads to an unphysical description of the occupied states of the impurity band (extremely long tail, no mobility edge, no bulk ferromagnetism).

cond-mat.mtrl-sci↗

arXiv2001

Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors

The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these materials have suggested that the polaron-polaron interaction is ferromagnetic, in contrast to the antiferromagnetic carrier-carrier interactions that are characteristic of nonmagnetic semiconductors. To explain this behavior, a model has been developed in which polarons interact via both the standard direct carrier-carrier exchange interaction (due to virtual carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due to the interactions of polarons with magnetic ions in an interstitial region). Using a variational procedure, the optimal values of the model parameters were determined as a function of temperature. At temperatures of interest, the parameters describing polaron-polaron interactions were found to be nearly temperature-independent. For reasonable values of these constant parameters, we find that indirect ferromagnetic interactions can dominate the direct antiferromagnetic interactions and cause the polarons to align. This result supports the experimental evidence for ferromagnetism in insulating doped DMS.

cond-mat.mtrl-sci↗

arXiv2001

Diluted Magnetic Semiconductors in the Low Carrier Density Regime

This paper, based on a presentation at the Spintronics 2001 conference, provides a review of our studies on II-VI and III-V Mn-doped Diluted Magnetic Semiconductors. We use simple models appropriate for the low carrier density (insulating) regime, although we believe that some of the unusual features of the magnetization curves should qualitatively be present at larger dopings (metallic regime) as well. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature dependence of the average magnetization as well as specific heat. Disorder is also found to enhance the ferromagnetic transition temperature. Unusual spin and charge transport is implied.

cond-mat.mtrl-sci↗

arXiv2001

Mean-field approach to ferromagnetism in (III,Mn)V diluted magnetic semiconductors at low carrier densities

We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature dependence of the average magnetization as well as specific heat. Disorder is also found to enhance the ferromagnetic transition temperature. Unusual spin and charge transport is implied.

cond-mat.mes-hall↗