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R. N. Bhatt

Publications and source records attributed to R. N. Bhatt.

89 records · Page 5Linked to original sources

Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors

We present results of a numerical mean field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Disorder is found to enhance the ferromagnetic transition temperature significantly for metallic densities not too far from the metal-insulator transition. Concurrently, the ferromagnetic phase is found to have very unusual temperature dependence of the magnetization as well as specific heat as a result of disorder. Unusual spin and charge transport is implied.

cond-mat.dis-nn↗

Search for Multiple Step Integer Quantum Hall Transitions

Recent experiments in the integer quantum Hall regime seem to find direct transitions from a quantum Hall state with Hall conductance $σ_{xy} = n e^2/h $ with integer $n > 1$, to an insulating state in weak magnetic fields. We study this issue using a variation of the tight-binding lattice model for non-interacting electrons. Although quantum Hall transitions with change in Hall conductance $n e^2/ h$ with $n > 1$ do exist in our model for special tuning of parameters, they generically split into quantum Hall transitions with the Hall conductance changing by $e^2 / h$ at each transition. This suggests that a generic multiple step quantum Hall transition is incompatible with a non-interacting electron picture.

cond-mat.mes-hall↗

Effective Interaction Hamiltonian of Polaron Pairs in Diluted Magnetic Semiconductors

The magnetic interaction of a pair of bound magnetic polarons (BMP) in diluted magnetic semiconductors (DMS) is analyzed via a generalized Hubbard-type Hamiltonian for two carriers in the presence of effective magnetic fields arising from the magnetic polarization of their respective polarons. For the case where the magnetic fields at the two sites have equal magnitude but are allowed to have arbitrary directions, it is shown that the energy of the two polarons is minimized for a ferromagnetic configuration of the carrier spins (in contrast to the case of hydrogenic centers in nonmagnetic semiconductors) if polaron fields are strong enough. A modified Heisenberg-type Hamiltonian is constructed to describe the low energy states of the resulting system.

cond-mat.mtrl-sci↗

Ferromagnetism in Insulating, Doped Diluted Magnetic Semiconductors

We report results of a Monte Carlo study of doped, diluted magnetic semiconductors in the low carrier density (insulating) regime. We find that the system undergoes a transition from a paramagnet at high temperatures to a ferromagnet at low temperatures. However, in strong contrast to uniform systems, disorder effects dominate the entire collective behavior, leading to very unconventional properties such as (1) magnetization curves that cannot be described by theories based on critical fluctuations, or on spin wave analysis over any significant fraction of the phase diagram; (2) a large peak in susceptibilty well below the ordering temperature; and (3) specific heat curves that point out the inadequacy of a classical Heisenberg model for spin-5/2 Mn ions. A picture of percolating magnetic polarons appears to describe the data well, and leads to a prescription for correcting the unphysical results of the classical continuous spin model in terms of a discrete vector model.

cond-mat.mtrl-sci↗

Two-Dimensional Wigner Crystal in Anisotropic Semiconductor

We investigate the effect of mass anisotropy on the Wigner crystallization transition in a two-dimensional (2D) electron gas. The static and dynamical properties of a 2D Wigner crystal have been calculated for arbitrary 2D Bravais lattices in the presence of anisotropic mass, as may be obtainable in Si MOSFETs with (110) surface. By studying the stability of all possible lattices, we find significant change in the crystal structure and melting density of the electron lattice with the lowest ground state energy.

cond-mat.mes-hall↗

Monte Carlo Simulations of Doped, Diluted Magnetic Semiconductors - a System with Two Length Scales

We describe a Monte Carlo simulation study of the magnetic phase diagram of diluted magnetic semiconductors doped with shallow impurities in the low concentration regime. We show that because of a wide distribution of interaction strengths, the system exhibits strong quantum effects in the magnetically ordered phase. A discrete spin model, found to closely approximate the quantum system, shows long relaxation times, and the need for specialized cluster algorithms for updating spin configurations. Results for a representative system are presented.

cond-mat.dis-nn↗

Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples

The low-temperature dc conductivities of barely metallic samples of p-type Si:B are compared for a series of samples with different dopant concentrations, n, in the absence of stress (cubic symmetry), and for a single sample driven from the metallic into the insulating phase by uniaxial compression, S. For all values of temperature and stress, the conductivity of the stressed sample collapses onto a single universal scaling curve. The scaling fit indicates that the conductivity of si:B is proportional to the square-root of T in the critical range. Our data yield a critical conductivity exponent of 1.6, considerably larger than the value reported in earlier experiments where the transition was crossed by varying the dopant concentration. The larger exponent is based on data in a narrow range of stress near the critical value within which scaling holds. We show explicitly that the temperature dependences of the conductivity of stressed and unstressed Si:B are different, suggesting that a direct comparison of the critical behavior and critical exponents for stress- tuned and concentration-tuned transitions may not be warranted.

cond-mat.str-el↗

Quantum Hall - insulator transitions in lattice models with strong disorder

We report results of numerical studies of the integer quantum Hall effect in a tight binding model on a two-dimensional square lattice with non-interacting electrons, in the presence of a random potential as well as a uniform magnetic field applied perpendicular to the lattice. We consider field magnitudes such that the area per flux quantum is commensurate with the lattice structure. Topological properties of the single electron wave functions are used to identify current carrying states that are responsible for the quantized Hall conductance. We study the interplay between the magnetic field and the disorder, and find a universal pattern with which the current carrying states are destroyed by increasing disorder strength, and the system driven into an insulating state. We also discuss how to interpolate results of lattice models to the continuum limit. The relationship to previous theoretical and experimental studies of quantum Hall-insulator transitions in strongly disordered systems at low magnetic fields is discussed.

cond-mat.mes-hall↗

Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and stress, the conductivity collapses onto a single universal scaling curve. For large values of the argument, the scaling function is well fit by the exponentially activated form associated with variable range hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. The temperature dependence of the prefactor, corresponding to the T-dependence of the critical curve, has been determined reliably for this system, and is proportional to the square-root of T. We show explicitly that nevlecting the prefactor leads to substantial errors in the determination of the scaling parameters and the critical exponents derived from them. The conductivity is not consistent with Mott variable-range hopping in the critical region nor does it obey this form for any range of the parameters. Instead, for smaller argument of the scaling function, the conductivity of Si:B is well fit by an exponential form with exponent 0.31 related to the critical exponents of the system at the metal- insulator transition.

cond-mat.str-el↗

Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition

Using uniaxial stress to tune Si:B through the metal-insulator transition we find the conductivity at low temperatures shows an excellent fit to scaling with temperature and stress on both sides of the transition. The scaling functions yield the conductivity in the metallic and insulating phases, and allow a reliable determination of the temperature dependence in the critical regions on both sides of the transition.

cond-mat.str-el↗

Universality at integer quantum Hall transitions

We report in this paper results of experimental and theoretical studies of transitions between different integer quantum Hall phases, as well as transition between the insulating phase and quantum Hall phases at high magnetic fields. We focus mainly on universal properties of the transitions. We demonstrate that properly defined conductivity tensor is universal at the transitions. We also present numerical results of a non-interacting electron model, which suggest that the Thouless conductance is universal at integer quantum Hall transitions, just like the conductivity tensor. Finite temperature and system size effects near the transition point are also studied.

cond-mat.mes-hall↗

Generation of Large Moments in a Spin-1 Chain with Random Antiferromagnetic Couplings

We study the spin-1 chain with nearest neighbor couplings that are rotationally invariant, but include both Heisenberg and biquadratic exchange, with random strengths. We demonstrate, using perturbative renormalization group methods as well as exact diagonalization of clusters, that the system generates ferromagnetic couplings under certain circumstances even when all the bare couplings are antiferromagnetic. This disorder induced instability leads to formation of large magnetic moments at low temperatures, and is a purely quantum mechanical effect that does not have a classical counterpart. The physical origin of this instability, as well as its consequences, are discussed.

cond-mat↗

Conductance fluctuations at the fractional quantum Hall plateau transitions

We obtain a ``mean field'' scaling flow of the longitudinal and the Hall conductivities in the fractional quantum Hall regime. Using the composite fermion picture and assuming that the composite fermions follow the Khmelnitskii-Pruisken scaling flow for the integer quantum Hall effect, the unstable fixed points which govern the transitions between different fractional quantum Hall states are identified. Distributions of the critical longitudinal and Hall conductivities at the unstable fixed points are obtained and implications of the results for the experiments on mesoscopic quantum Hall systems are discussed.

cond-mat.mes-hall↗

Current Carrying States in a Random Magnetic Field

We report results of a numerical study of noninteracting electrons moving in two dimensions, in the presence of a random potential and a random magnetic field for a sequence of finite sizes, using topological properties of the wave functions to identify extended states. Our results are consistent with the existence of a second order localization-delocalization transition driven by the random potential. The critical randomness strength and localization length exponent are estimated via a finite size scaling analysis.

cond-mat.mes-hall↗

Quantum Griffiths Singularities in the Transverse-Field Ising Spin Glass

We report a Monte Carlo study of the effects of {\it fluctuations} in the bond distribution of Ising spin glasses in a transverse magnetic field, in the {\it paramagnetic phase} in the $T\to 0$ limit. Rare, strong fluctuations give rise to Griffiths singularities, which can dominate the zero-temperature behavior of these quantum systems, as originally demonstrated by McCoy for one-dimensional ($d=1$) systems. Our simulations are done on a square lattice in $d=2$ and a cubic lattice in $d=3$, for a gaussian distribution of nearest neighbor (only) bonds. In $d=2$, where the {\it linear} susceptibility was found to diverge at the critical transverse field strength $Γ_c$ for the order-disorder phase transition at T=0, the average {\it nonlinear} susceptibility $χ_{nl}$ diverges in the paramagnetic phase for $Γ$ well above $Γ_c$, as is also demonstrated in the accompanying paper by Rieger and Young. In $d=3$, the linear susceptibility remains finite at $Γ_c$, and while Griffiths singularity effects are certainly observable in the paramagnetic phase, the nonlinear susceptibility appears to diverge only rather close to $Γ_c$. These results show that Griffiths singularities remain persistent in dimensions above one (where they are known to be strong), though their magnitude decreases monotonically with increasing dimensionality (there being no Griffiths singularities in the limit of infinite dimensionality).

cond-mat↗

Floating of Extended States and Localization Transition in a Weak Magnetic Field

We report results of a numerical study of non-interacting electrons moving in a random potential in two dimensions in the presence of a weak perpendicular magnetic field. We study the topological properties of the electronic eigenstates within a tight binding model. We find that in the weak magnetic field or strong randomness limit, extended states float up in energy. Further, the localization length is found to diverge at the insulator phase boundary with the same exponent $ν$ as that of the isolated lowest Landau band (high magnetic field limit).

cond-mat↗

Random Bonds and Topological Stability in Gapped Quantum Spin Chains

We study the effects of random bonds on spin chains that have an excitation gap in the absence of randomness. The dimerized spin-1/2 chain is our principal example. Using an asymptotically exact real space decimation renormalization group procedure, we find that dimerization is a relevant perturbation at the random singlet fixed point. For weak dimerization, the dimerized chain is in a Griffiths phase with short range spin-spin correlations and a divergent susceptibility. The string topological order, however, is not destroyed by bond randomness and dimerization is stabilized by the confinement of topological defects. We conjecture that random integer spin chains in the Haldane phase exhibit similar thermodynamic and topological properties.

cond-mat↗