arXiv subjects

R. Vaglio

Publications and source records attributed to R. Vaglio.

11 recordsLinked to original sources

arXiv2022

Next-Generation Superconducting RF Technology based on Advanced Thin Film Technologies and Innovative Materials for Accelerator Enhanced Performance and Energy Reach

Superconducting RF is a key technology for future particle accelerators, now relying on advanced surfaces beyond bulk Nb for a leap in performance and efficiency. The SRF thin film strategy aims at transforming the current SRF technology by using highly functional materials, addressing all the necessary functions. The community is deploying efforts in three research thrusts to develop next-generation thin-film based cavities. Nb on Cu cavities are developed to perform as good as or better than bulk Nb at reduced cost and with better thermal stability. Recent results showing improved accelerating field and dramatically reduced Q slope show their potential for many applications. The second research thrust is to develop cavities coated with materials that can operate at higher temperatures or sustain higher fields. Proof of principle has been established for the merit of Nb3Sn for SRF application. Research is now needed to further exploit the material and reach its full potential with novel deposition techniques. The third line of research is to push SRF performance beyond the capabilities of the superconductors alone with multilayered coatings. In parallel, developments are needed to provide quality substrates, cooling schemes and cryomodule design tailored to thin film cavities. Recent results in these three research thrusts suggest that SRF thin film technologies are at the eve of a technological revolution. For them to mature, active community support and sustained funding are needed to address fundamental developments supporting material deposition techniques, surface and RF research, technical challenges associated with scaling and industrialization. With dedicated and sustained investment, next-generation thin-film based cavities will become a reality with high performance and efficiency, facilitating energy sustainable science while enabling higher luminosity, and higher energy.

physics.acc-ph↗

arXiv2012

Observation of a two-dimensional electron gas at the surface of annealed SrTiO3 single crystals by scanning tunneling spectroscopy

Scanning tunneling spectroscopy suggests the formation of a two dimensional electron gas (2DEG) on the TiO2 terminated surface of undoped SrTiO3 single crystals annealed at temperature lower than 400 °C in ultra high vacuum conditions. Low energy electron diffraction indicates that the 2D metallic SrTiO3 surface is not structurally reconstructed, suggesting that non-ordered oxygen vacancies created in the annealing process introduce carriers leading to an electronic reconstruction. The experimental results are interpreted in a frame of competition between oxygen diffusion from the bulk to the surface and oxygen loss from the surface itself.

cond-mat.mtrl-sci↗

arXiv2011

In-situ Investigation of the Early Stage of TiO2 epitaxy on (001) SrTiO3

We report on a systematic study of the growth of epitaxial TiO2 films deposited by pulsed laser deposition on Ti-terminated (001) SrTiO3 single crystals. By using in-situ reflection high energy electron diffraction, low energy electron diffraction, x-ray photoemission spectroscopy and scanning probe microscopy, we show that the stabilization of the anatase (001) phase is preceded by the growth of a pseudomorphic Sr-Ti-O intermediate layer, with a thickness between 2 and 4 nm. The data demonstrate that the formation of this phase is related to the activation of long range Sr migration from the substrate to the film. The role of interface Gibbs energy minimization, as a driving force for Sr diffusion, is discussed. Our results enrich the phase diagram of the Sr-Ti-O system under epitaxial strain opening the roudeficient SrTiO phase.

cond-mat.mtrl-sci↗

arXiv2008

Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor

The mechanism of field-effect doping in the "123" high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO2 planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric/HTS interface determine the electric field doping of the CuO2 planes

cond-mat.str-el↗

arXiv2006

Role of interband scattering in neutron irradiated MgB$_2$ thin films by Scanning Tunneling Spectroscopy measurements

A series of MgB$_2$ thin films systematically disordered by neutron irradiation have been studied by Scanning Tunneling Spectroscopy. The c-axis orientation of the films allowed a reliable determination of local density of state of the $π$ band. With increasing disorder, the conductance peak moves towards higher voltages and becomes lower and broader, indicating a monotonic increase of the $π$ gap and of the broadening parameter. These results are discussed in the frame of two-band superconductivity.

cond-mat.supr-con↗

arXiv2006

Direct Observation of Spectroscopic Inhomogeneities on La0.7Sr0.3MnO3 Thin Films by Scanning Tunnelling Spectroscopy

Scanning tunnelling spectroscopy measurements were performed on La0.7Sr0.3MnO3 thin films both at room temperature and liquid nitrogen temperature. While no inhomogeneities were recorded at liquid nitrogen temperature on any sample, a clear evidence of spectroscopic inhomogeneities was evident in tunnelling conductance maps collected at room temperature. The investigated films exhibit a transition from a ferromagnetic-metallic to a paramagnetic-insulating state around room temperature, so that the observed spectroscopic features can be interpreted within a phase separation scenario. A quantitative analysis of the observed spectroscopic features is reported pointing out the occurrence of phase modulation and its possible correlation with the properties of the system.

cond-mat.str-el↗

arXiv2004

High-field superconductivity in alloyed MgB2 thin films

We investigated the effect of alloying on the upper critical field $H_{c2}$ in 12 $MgB_2$ films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant $H_{c2}$ enhancement in C-alloyed films, and an anomalous upward curvature of $H_{c2}(T)$. Record high values of $H_{c2}^{\perp}(4.2) \simeq 35T$ and $H_{c2}\|(4.2) \simeq 51T$ were observed perpendicular and parallel to the ab plane, respectively. The temperature dependence of $H_{c2}(T)$ is described well by a theory of dirty two-gap superconductivity. Extrapolation of the experimental data to T=0 suggests that $H_{c2}\|(0)$ approaches the paramagnetic limit of $\sim 70T$.

cond-mat.supr-con↗

arXiv2003

Microwave intermodulation distortion of MgB2 thin films

The two tone intermodulation arising in MgB2 thin films deposited in-situ by planar magnetron sputtering on sapphire substrates is studied. Samples are characterised using an open-ended dielectric puck resonator operating at 8.8 GHz. The experimental results show that the third order products increase with the two-tone input power with a slope ranging between 1.5 and 2.3. The behaviour can be understood introducing a mechanism of vortex penetration in grain boundaries as the most plausible source of non linearities in these films. This assumption is confirmed by the analysis of the field dependence of the surface resistance, that show a linear behaviour at all temperatures under test.

cond-mat.supr-con↗

arXiv2002

High quality MgB2 thin films in-situ grown by dc magnetron sputtering

Thin films of the recently discovered magnesium diboride (MgB2) intermetalic superconducting compound have been grown using a magnetron sputtering deposition technique followed by in-situ annealing at 830 C. High quality films were obtained on both sapphire and MgO substrates. The best films showed maximum Tc = 35 K (onset), a transition width of 0.5 K, a residual resistivity ratio up to 1.6, a low temperature critical current density Jc > 1 MA/cm2 and anisotropic critical field with gamma = 2.5 close to the values obtained for single crystals. The preparation technique can be easily scaled to produce large area in-situ films.

cond-mat.supr-con↗

arXiv2001

Study of the microwave electrodynamic response of MgB2 thin films

We present a study on the power dependence of the microwave surface impedance in thin films of the novel superconductor MgB2. 500 nm thick samples exhibiting critical temperatures ranging between 26 and 38 K are synthesized by an ex-situ post-anneal of e-beam evaporated boron in the presence of an Mg vapor at 900 C. Preliminary results on films grown in situ by a high rate magnetron sputtering technique from stoichiometric MgB2 and Mg targets are also reported. Microwave measurements have been carried out employing a dielectrically loaded niobium superconducting cavity operating at 19.8 GHz and 4 K. The study shows that the electrodynamic response of MgB2 films is presently dominated by extrinsic sources of dissipation, appearing already at low microwave power, likely to be ascribed to the presence of grain boundaries and normal inclusions in the samples.

cond-mat.supr-con↗

arXiv2001

Superconducting gap anisotropy of LuNi2B2C thin films from microwave surface impedance measurements

Surface impedance measurements of LuNi2B2C superconducting thin films as a function of temperature have been performed down to 1.5 K and at 20 GHz using a dielectric resonator technique. The magnetic penetration depth closely reproduces the standard B.C.S. result, but with a reduced value of the energy gap at low temperature. These data provide evidence for an anisotropic s-wave character of the order parameter symmetry in LuNi2B2C. From the evaluation of the real part of complex conductivity, we have observed constructive (type II) coherence effects in the electromagnetic absorption below Tc.

cond-mat.supr-con↗