arXiv subjects

Ramamoorthy Ramesh

Publications and source records attributed to Ramamoorthy Ramesh.

At least 19 recordsLinked to original sources

arXiv2026

A Magnon-Based Electric Field Controlled Magnetoelectric Device for Energy-Efficient Logic-in-Memory

We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100 ps switching, a remnant polarization of 20 uC/cm2, and a readout voltage contrast close to 1mV between high and low-resistance states. To connect device physics to circuit behavior, we develop and experimentally validate a compact circuit model that captures spin Hall injection and spin transport. Simulations with optimized material parameters predict output voltages > 100mV, enabling cascading without external amplification. Using this framework, we design MEMM-based memory and logic blocks, including a 1T1R array, two inverter implementations (complementary two-device and single-device), and a three-input majority gate, and evaluate deep-pipelined operation. The model projects switching energies down to 1 aJ per operation and logic propagation delays of 30-60 ps, indicating MEMM as a promising platform for energy-constrained, high throughput computing.

cond-mat.mtrl-sci↗

arXiv2026

Electric field controlled spin transport in a topological insulator interfaced with a ferroelectric antiferromagnet

Topological insulators have been explored extensively for spin-charge interconversion via magnetic interfaces, yet the true response of their spin-charge conversion, particularly in the absence of an external magnetic field, remains to be studied. Here, we report electric-field control of spin-charge conversion in the topological insulator Bi$_2$Te$_3$ with the antiferromagnetic multiferroic BiFeO$_3$, employing a nonlocal spin transport device. A systematic thickness dependence of the spin transport across the interface between Bi$_2$Te$_3$ and BiFeO$_3$ reveals a signature of topological surface-state-dominated spin transport in the bilayer system. The spin-charge conversion remains robust for thicknesses above 10 nm but falls rapidly with reducing thickness and vanishes at 5 nm. This is consistent with the hybridization-induced emergence of a trivial insulating phase, which is supported by the coherency factor estimated from the magnetoconductance of Bi$_2$Te$_3$. These results establish that spin-momentum-locked surface states dominate interfacial spin transport in the decoupled regime. Beyond presenting efficient spin-charge interconversion at an entirely insulating magnetic interface, this work also highlights sputter-deposited Bi$_2$Te$_3$ as a high-quality and scalable platform for integrating quantum materials into devices. The nonlocal spin transport approach presented here provides a simple and direct evidence of spin-charge conversion and opens an efficient and practical pathway toward designing energy-efficient spin-based devices.

cond-mat.mes-hall↗

arXiv2026

Emergence of millimeter-wave resonances in self-assembled ferroelectric metamaterials

Resonators are a key component in modern communications and computing. As demand and technological advances push component requirements into the terahertz regime, there is significant research devoted to the search for resonances at these frequencies. While uniform solid-state materials usually do not intrinsically feature resonances in this frequency range, self-assembled periodic arrays of ferroelectric nanodomains may provide an engineering route to design millimeter-wave properties. Here, we utilize prototypical dielectric-ferroelectric SrTiO3/PbTiO3 superlattices to robustly design periodic ferroelectric nano-scale domains. Phase field simulations predict an emergent domain breathing mode in complex polar textures and state-of-the-art millimeter-wave characterization shows evidence for such emergent resonances up to hundreds of GHz. Complex polar textures in these superlattices lead to emergent piezoelectric properties that also result in millimeter-wave resonances, which are predicted by second principles methods and confirmed by direct measurement. The principles investigated in this work suggest a new modality for ferroelectrics in the design of millimeter-wave electronics.

cond-mat.mtrl-sci↗

arXiv2026

Solid-state transcapacitor, a new gain element for logic, memory and interconnects

Today's transistors dictate the voltage and charge scales for both logic and memory. While AI systems are recognized to be limited by memory energy, the dominant share of the energy is expended in the intrachip interconnects whose voltage and charge scales are set by transistors. The energy scaling challenges of transistors can be attributed to simultaneously meeting high current density, high current/impedance modulation, and the inability to lower voltages. Hence, a new logic element that lowers the voltage and charge needs is a priority, not only for lowering logic power but also memory access power. Here, we propose a novel 3-terminal logic element for low energy computing, a solid-state transcapacitor (TCAP). A TCAP is a solid state displacement current modulator realized by a gate which controls the charge-voltage relationship of the channel. Unlike transistors, TCAPs eliminate the dissipative transport current, are not bound by the Boltzmann current modulation limit, and operate with displacement currents limited only by the polarization response and contact resistance. Hence, TCAP circuits may simultaneously overcome the voltage, current density, and current modulation limits of CMOS. We describe a solid state TCAP using a piezoelectric transcapacitor in which a gate-controlled stressor modulates the capacitance of a polar channel via electromechanical coupling. This device achieves inversion and gain, essential for logic, and is functionally equivalent to a 1T-1C memory cell, enabling dense memory. Using voltage scaling, capacitive energy recovery, and high polarization densities of polar materials, the logic based on TCAP offers a pathway to 100 fold lower energy consumption with a delay comparable to ultimately scaled CMOS devices. This approach provides a new potential pathway for low-energy computing beyond the limits of transistors using electro-mechanics and multiferroics.

cond-mat.mes-hall↗

arXiv2026

Revealing buried ferroelectric topologies by depth-resolved electron diffraction imaging

Nanoscale topological polar textures promise new functionalities for ferroelectric memories and logic, yet their three-dimensional structure and mesoscale organization remain experimentally inaccessible. Here we introduce depth-resolved electron diffraction imaging (DREDI), a fast, non-destructive, method that maps polarization with <50 nm lateral and <10 nm depth sensitivity within fraction of a second. Its high acquisition speed enables the first continuous polarization mapping across six orders of magnitude in length scale, from nanometers to millimeters. Using epitaxial BiFeO3 films, DREDI reveals a hidden depth evolution of polar textures: surface 71-degree stripes evolve into subsurface flux-closure vortices that bifurcate into three-fold vertices near the bottom interface. Cross-sectional multi-slice electron ptychography and phase-field modeling confirm these buried configurations and attribute them to strain heterogeneity and ferroelastic twinning in the SrRuO3 electrode. Large-area analysis further shows that vertex-like frustration forms a mesoscale percolating network above a critical length scale of 4 um. DREDI enables real-time, volumetric studies of buried topological textures in ferroic nanomaterials.

cond-mat.mtrl-sci↗

arXiv2026

Spatially modulated morphotropic phase boundaries in a compressively strained multiferroic thin film

The coexisting rhombohedral-like (R', MA) and tetragonal-like (T', MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R'/T' twins, their self-organizing structures remain not fully explored. Here, we observed two types of interphase boundaries in a 60 nm-thick BiFeO3 film epitaxially grown on a LaAlO3 substrate by employing multi-modal diffraction-based electron microscopy. First, the flat MPBs form lines extending >1 mm, and repeat almost every ~20 um. Additionally, we uncover a new type of phase boundary with zig-zag regions of alternating R'/R' and T'/T' twin domains. Cross-sectional multislice electron ptychography confirms the atomic-scale polarization rotation across the MPB, with out-of-plane strain varying >15%. Plan-view electron backscatter diffraction reveals the lattice disclination of ~1.5-degrees across the zig-zag interphase boundaries, while having >2.5 degrees within the MPB. Phase-field modeling suggests that the formation of zig-zag phase boundaries arises from balancing between Landau and elastic energies. We speculate that such well-ordered interphase boundaries are associated with mesoscale in-plane strain modulations, thus providing a way to engineer and harness their properties for potential device applications.

cond-mat.mtrl-sci↗

arXiv2026

Mechanical Control of Polar Order

BiFeO3 is a model multiferroic in which the ferroelectric polarization is coupled to ferroelastic lattice distortions, yet deterministic control of its domain structure remains limited by high switching fields and competing polarization variants. Here, we identify a mechanically assisted polarization switching pathway in epitaxial BiFeO3 thin films that fundamentally alters the switching energetics. Using just out-of-plane electric fields, polarization reversal requires voltages of approximately 4 V and stabilizes coexisting polarization states. In contrast, when mechanical pressure is applied concurrently, the coercive voltage can be significantly reduced (even to 0V), resulting in spontaneous switching. Piezoresponse force microscopy measurements reveal that applied mechanical pressure suppresses ferroelastic domain competition, indicating a decrease in the required electrical energy barrier associated with polarization rotation and domain wall motion. These results demonstrate that stress acts as an active thermodynamic control parameter, enabling access to switching pathways that are inaccessible under only an electric field. By directly coupling lattice distortions to polarization reversal, mechanically assisted switching provides a general framework for controlling coupled order parameters in multiferroic oxides, which can be directly applied in the device-level architecture, where a small mechanical pressure can help in achieving lower switching energy of ferroelectric polarization. This work advances the fundamental understanding of electromechanical coupling in complex ferroics and establishes mechanical energy as a powerful tool for probing and manipulating ferroelastic ferroelectric interactions.

cond-mat.mtrl-sci↗

arXiv2026

Mapping Metastable Magnetic Textures in (Fe0.5Co0.5)5GeTe2 with in-situ Lorentz Transmission Electron Microscopy

Topologically protected magnetic textures are a promising route to low-energy control of magnetism, but they are most often studied away from ambient conditions, typically at low temperatures and high magnetic fields. Here we use in-situ Lorentz transmission electron microscopy with control of temperature and magnetic field to investigate the skyrmion metastability in (Fe0.5Co0.5)5GeTe2 (FCGT). By field-cooling FCGT in magnetic fields of different magnitude to different base temperatures and then removing the applied field, we create meta(stable) zero-field magnetic states. We use this method to build a phase diagram of the zero-field metastable spin structures in FCGT, which will be critical for selecting the desired topologically-protected spin state for future studies to manipulate magnetism with stimuli such as electric current, electric field, mechanical strain, and more.

cond-mat.mtrl-sci↗

arXiv2026

The 2026 Skyrmionics Roadmap

Magnetic skyrmions and related topological spin textures have emerged as a central topic in condensed-matter physics, combining fundamental significance with potential for transformative applications in spintronics, magnonics, and beyond. Over the past decade, advances in material platforms, imaging techniques, theoretical modeling, and device concepts have established skyrmionics as a rapidly expanding field. At the same time, challenges remain in stabilizing, controlling, and integrating such textures into functional architectures, while novel phenomena such as antiskyrmions, higher-order skyrmions, hopfions, and antiferromagnetic textures arise. The 2026 Skyrmionics Roadmap represents a collective effort of many authors, providing a comprehensive perspective on the current state-of-the-art and the outlook for the coming years. In 33 focused sections, each co-authored by two researchers, we chart progress in theory and modeling, material systems, skyrmion dynamics, and skyrmion technologies. By offering a consolidated vision, this Roadmap aims to guide both fundamental research and application-driven efforts, accelerating the transition of skyrmionics from conceptual breakthroughs toward practical technologies.

cond-mat.mes-hall↗

arXiv2026

Topological textures and emergent altermagnetic signatures in ultrathin BiFeO3

Magnetoelectric multiferroics, materials with intrinsically coupled electric polarization and magnetic order, promise ultralow-power switching, nonvolatile memory, and energy-efficient signal transduction. Yet practical deployment demands ultrathin films down to the atomic limit, where both orders typically degrade. Maintaining both order parameters at the thinnest scales in complex oxides remains a tremendous challenge, as uncompensated bound charge drives nanoscale depolarization in most ferroelectrics, while off-stoichiometry, reduced anisotropy, and charge transfer can produce magnetic dead layers in ultrathin oxides at substrate interfaces. Here, we realize a multiferroic phase of BiFeO3 that not only sustains both order parameters at room temperature with no dead layer but also exhibits signatures of emergent altermagnetism in the four-unit-cell, ultrathin limit. First-principles calculations, spin symmetry analysis, atomic-resolution imaging, and angle-resolved magnetic imaging reveal that short-circuit electrostatic boundary conditions, together with epitaxial strain, drive a continuous second-order, thickness-driven phase transition that enables the formation of multiferroic topological textures. Moreover, the imposed boundary conditions stabilize a d-wave altermagnetic time-reversal symmetry breaking, with corresponding signatures observed in magnetic circular dichroism. Collectively, these results establish a pathway to stabilize unconventional multiferroicity at device-relevant thicknesses, reframing scaling limits for oxide electronics.

cond-mat.mtrl-sci↗

arXiv2026

Anisotropic magnon transport in an antiferromagnetic trilayer heterostructure: is BiFeO$_3$ an altermagnet?

Magnons provide a route to ultra-fast transport and non-destructive readout of spin-based information transfer. Here, we report magnon transport and its emergent anisotropic nature in BiFeO$_3$ layers confined between ultrathin layers of the antiferromagnet LaFeO$_3$. Due to the confined state, BiFeO$_3$ serves as an efficient magnon transmission channel as well as a magnetoelectric knob by which to control the stack by means of an electric field. We discuss the mechanism of the anisotropic spin transport based on the interaction between the antiferromagnetic order and the electric field. This allows us to manipulate and amplify the spin transport in such a confined geometry. Furthermore, lower crystal symmetric and suppression of the spin cycloid in ultrathin BiFeO$_3$ stabilizes a non-trivial antiferromagnetic state exhibiting symmetry-protected spin-split bands that provide the non-trivial sign inversion of the spin current, which is a characteristic of an altermagnet. This work provides an understanding of the anisotropic spin transport in complex antiferromagnetic heterostructures where ferroelectricity and altermagnetism coexist, paving the way for a new route to realize electric-field control of a novel state of magnetism.

cond-mat.mes-hall↗

arXiv2025

Noise Electrometry of Polar and Dielectric Materials

A qubit sensor with an electric dipole moment acquires an additional contribution to its depolarization rate when it is placed in the vicinity of a polar or dielectric material as a consequence of electrical noise arising from polarization fluctuations in the latter. Here, we characterize this relaxation rate as a function of experimentally tunable parameters such as sample-probe distance, probe-frequency, and temperature, and demonstrate that it offers a window into dielectric properties of insulating materials over a wide range of frequencies and length scales. We discuss the experimental feasibility of our proposal and illustrate its ability to probe a variety of phenomena, ranging from collective polar excitations to phase transitions and disorder-dominated physics in relaxor ferroelectrics. Our proposal paves the way for a novel table-top probe of polar and dielectric materials in a parameter regime complementary to existing tools and techniques.

cond-mat.mtrl-sci↗

arXiv2025

Symmetry-designed BiFeO3 single domain spin cycloid for efficient spintronics

Deterministic control of coupled ferroelectric and antiferromagnetic orders remains a central challenge in multiferroics, limiting their integration into functional magnetoelectrics and magnonic-devices. (111)pc BiFeO3 with a robust single spin cycloid, offers direct magnetoelectric-coupling and a platform for efficient spin transport, yet multi-magnetic domains and ferroelectric-fatigue have prevented reproducible control. Here, we show that anisotropic-compressive in-plane strain stabilizes a single antiferromagnetic domain with unique spin-cycloid vector, by breaking the symmetry of the (111)pc plane. Epitaxial BiFeO3 films grown on orthorhombic NdGaO3 (011)o [(111)pc] substrates impose the required anisotropic in-plane strain and stabilizes single antiferromagnetic domain, as confirmed through direct imaging with scanning NV microscopy and non-resonant-x-ray-magnetic-scattering. Remarkably, these engineered films exhibit deterministic and non-volatile 180° switching of ferroelectric and single antiferromagnetic domains over 1,000 cycles. The monodomain state also enables anisotropic and threefold enhanced magnon transport with reduced scattering. Thus, symmetry-designed (111)pc monodomain BiFeO3 offers a robust platform for advanced magnetoelectric and magnonic applications.

cond-mat.mtrl-sci↗

arXiv2025

Harnessing the polar vortex motion in oxide heterostructures

Polar topology, an analogue of the magnetic topology, serves as a large playground for exotic physical phenomena with a wide range of multifunctional applications. Polar vortices and skyrmions are representative polar topologies that have been predicted to significantly enhance the functionality and information density of nanoelectronic devices due to their ultrasmall dimensions. Despite these advantages, the practical realization of polar topologies in devices is impeded by the intrinsic challenges associated with their controlled motion and manipulation. Therefore, harnessing vortex manipulation-such as motion, on demand creation, annihilation, and shape transformation-is essential for practical device integration. However, vortex motion is often challenged by intrinsic physical limitations in collective lattice distortions and strong pinning effects from the surrounding environment, which remains elusive. In this study, we present real time observation of vortex motion in PbTiO3/SrTiO3 heterostructures, achieved through the application of localized pulsed electric fields and trailing bias fields from a conductive tip. Notably, the vortices exhibit reversible motion in response to the field direction. Furthermore, by precisely manoeuvring the conductive Atomic-Force-Microscopy tip along specific trajectories, we achieved controlled vortex reshaping, with reconfigured vortices showing remarkable stability over extended periods. This underline physical mechanism is further pinpointed by phase-field simulations, which revealed that the motion of the vortex boundary is controlled through the switching of the zigzag patterns of the vortex core. This study highlights the feasibility of harnessing vortex dynamics through external stimuli, advancing the fundamental physical understanding and prospects for next-generation polar vortex-based nanoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Terahertz-field activation of polar skyrons

Unraveling collective modes arising from coupled degrees of freedom is crucial for understanding complex interactions in solids and developing new functionalities. Unique collective behaviors emerge when two degrees of freedom, ordered on distinct length scales, interact. Polar skyrmions, three-dimensional electric polarization textures in ferroelectric superlattices, disrupt the lattice continuity at the nanometer scale with nontrivial topology, leading to previously unexplored collective modes. Here, using terahertz-field excitation and femtosecond x-ray diffraction, we discovered subterahertz collective modes, dubbed 'skyrons', which appear as swirling patterns of atomic displacements functioning as atomic-scale gearsets. Momentum-resolved time-domain measurements of diffuse scattering revealed an avoided crossing in the dispersion relation of skyrons. We further demonstrated that the amplitude and dispersion of skyrons can be controlled by sample temperature and electric-field bias. Atomistic simulations and dynamical phase-field modeling provided microscopic insights into the three-dimensional crystallographic and polarization dynamics. The discovery of skyrons and their coupling with terahertz fields opens avenues for ultrafast control of topological polar structures.

cond-mat.mtrl-sci↗

arXiv2025

Revealing Atomic-Scale Switching Pathways in van der Waals Ferroelectrics

Two-dimensional van der Waals (vdW) materials hold the potential for ultra-scaled ferroelectric (FE) devices due to their silicon compatibility and robust polarization down to atomic scale. However, the inherently weak vdW interactions enable facile sliding between layers, introducing complexities beyond those encountered in conventional ferroelectric materials and presenting significant challenges in uncovering intricate switching pathways. Here, we combine atomic-resolution imaging under in-situ electrical biasing conditions with first-principles calculations to unravel the atomic-scale switching mechanisms in SnSe, a vdW group-IV monochalcogenide. Our results uncover the coexistence of a consecutive 90 degrees switching pathway and a direct 180 degrees switching pathway from antiferroelectric (AFE) to FE order in this vdW system. Atomic-scale investigations and strain analysis reveal that the switching processes simultaneously induce interlayer sliding and compressive strain, while the lattice remains coherent despite the presence of multidomain structures. These findings elucidate vdW ferroelectric switching dynamics at atomic scale and lay the foundation for the rational design of 2D ferroelectric nanodevices.

cond-mat.mtrl-sci↗

arXiv2025

Low-energy domain wall racetracks with multiferroic topologies

Conventional racetrack memories move information by pushing magnetic domain walls or other spin textures with spin-polarized currents, but the accompanying Joule heating inflates their energy budget and can hamper scaling. Here we present a voltage-controlled, magnetoelectric racetrack in which transverse electric fields translate coupled ferroelectric-antiferromagnetic walls along BiFeO3 nanostrips at room temperature. Because no charge traverses the track, the switching dissipates orders of magnitude less energy than the most efficient spin-torque devices with more favourable scaling, making the scheme significantly more attractive at the nanoscale. We further uncover noncollinear topological magnetoelectric textures that emerge at domain walls in BiFeO3, where the nature of these topologies influences their stability upon translation. Among these are polar bi-merons and polar vertices magnetoelectrically coupled with magnetic cycloid disclinations and previously unobserved, topological magnetic cycloid twist topologies. We observe domain wall velocities of at least kilometres per second - matching or surpassing the fastest ferrimagnetic and antiferromagnetic racetracks and approaching the acoustic-phonon limit of BiFeO3 - while preserving these topologies over tens of micrometres. The resulting high velocity, low-energy racetrack delivers nanosecond access times without the thermal overhead of current-driven schemes, charting a path toward dense, ultralow-power racetrack devices which rely on spin texture translation.

cond-mat.mtrl-sci↗

arXiv2025

Electron-magnon coupling at the interface of a "twin-twisted" antiferromagnet

We identify a "twin-twist" angle in orthorhombic two-dimensional magnets that maximizes interlayer orbital overlap and enables strong interfacial coupling. Focusing on the van der Waals antiferromagnet CrSBr, we show that this twist angle, near 72 deg, aligns diagonal lattice vectors across the layers, enhancing the interlayer hopping that is spin-forbidden in pristine systems and orbital-forbidden in 90-deg-twisted samples. The enhanced hopping modifies the electronic structure and activates a novel mechanism for excitation of interfacial magnons. Using optical probes we discover that excitons on one side of the interface selectively excite magnons localized on the opposite side. We show that this cross-coupling phenomenon can be understood as a consequence of the spin-transfer torque as that arises as electrons tunnel across the twin-twisted interface. Our findings demonstrate that large-angle twisting in anisotropic 2D materials offers a powerful tool for engineering spin and charge transport through controlled interlayer hybridization, opening new avenues for twisted magnetism and strongly correlated moiré physics.

cond-mat.mes-hall↗